CONTD…………
II. Avalanche breakdown: In this case, the increased reverse voltage
increases the amount of energy imparted to minority carriers , as they
diffuse across the junction. As the reverse voltage is increased further, the
minority carriers acquire a large amount of energy. When this carriers collide
with Si or (Ge) atoms, within the crystal structure they impart sufficient energy
to break a covalent bond and generate additional carriers. These additional
carriers pick up energy from the applied voltage and generate still more carriers.
As a result of this, the reverse current increases rapidly. This cumulative process
of carrier generation (or multiplication) is known as avalanche breakdown.
DEPLETION LAYER CAPACITANCE
• When a PN junction is formed, a layer of positive and negative impurity ions
called depletion layer is formed on either side of the junction.
• The depletion layer acts as a dielectric medium between P-region and N-
region.
• The capacitance formed in a junction area is called depletion layer
capacitance.
• The depletion layer capacitance depends upon the nature of a PN junction ,
semiconductor material and magnitude of applied reverse voltage .It is given
by the relation,
= where K= a constant, depending upon the nature of semiconductor material
arrier voltage (0.6 V for Si and 0.2 V for Ge) V=Applied reverse voltage
n= const. depending upon the nature of the junction.
DIFFUSION STORAGE CAPACITANCE
• The capacitance which exist in a forward –biased junction is called
diffusion or storage capacitance.
• It arises due to the diffusion of minority carriers on both sides of the
junctions.
• Its value is given by the relation
= =mean life time of the carriers
I=forward current A const.(whose value is 1 for Ge and 2 for Si)
=Volt equivalent of temperature
PN JUNCTION DIODE
• A PN junction diode consists of a PN
junction, formed either in Ge or Si crystal.
• The anode refers to the P-region and
cathode refers to N-region.
• The most common function of a diode is
to allow an electric current to pass in one
direction while blocking current in
opposite direction.
LOW, MEDIUM AND HIGH CURRENT DIODES
V-I CHARACTERISTICS OF PN JUNCTION DIODE
• Forward characteristics:
FORWARD CHARACTERISTICS
Cut-in voltage of Si and Ge:
The voltage at which the diode starts conducting is called a knee voltage
or cut-in voltage. Its value is equal to 0.6 V for Si and 0.2 V for Ge
REVERSE CHARACTERISTICS
DIODE CURRENT EQUATION
The current equation for a forward biased diode is given by the relation
I= ()
I=forward(or reverse) diode current
= Reverse saturation current
= External voltage
=A constant whose value is equal to 1 for Ge and 2 for Si diodes
=volt equivalent of temperature
The current equation for a reversed biased diode is given by the relation
I= ()
THE IDEAL DIODE
STATIC AND DYNAMIC RESISTANCE OF DIODE
• Diode has a definite value of resistance when forward biased. This is called
forward or static resistance of the diode and given by the ratio of the dc
voltage across the diode to the dc current flowing through it.
Mathematically,
static resistance =
• The resistance offered by the diode to an ac signal is called dynamic or a.c
resistance. The a.c resistance of a diode at a particular d.c voltage is equal
to the reciprocal of the slope of volt-amp characteristics at that point
CONTD…….
=
The value of ac resistance of a diode is in the range of 1 to 25 Ω.
Diode applications:
[Link] rectifiers in dc power supplies.
[Link] signal diodes in communication circuits.
3. As Zener diodes in voltage stabilizing circuits.
4. As varactor diodes in radio and TV receivers.
[Link] switch in logic circuits used in computers.
POWER AND CURRENT RATING OF DIODE
• Mathematically, or a forward biased diode
=
The maximum value of power which a diode can dissipate without failure
is called power rating of the diode. Thus the power dissipation should not
exceed power rating in any case.
PEAK INVERSE VOLTAGE
• The peak inverse voltage rating of the diode is the maximum reverse
voltage of diode that can be handled by diode before breaking down. If
the reverse voltage across a PN junction diode exceeds its PIV, then
reverse current increases sharply and break down the junction because
of excessive heat generated.