EEE1001 - ELECTRIC
CIRCUITS AND
SYSTEMS
Module 3 Session 3
Field Effect Transistors
Introduction
• Two main types of FET:
- JFET –Junction field effects transistor
- MOSFET – Metal oxide semiconductor
field effect transistor
- D-MOSFET ~ Depletion MOSFET
- E-MOSFET ~ Enhancement MOSFET
• Similarities:
-Amplifiers
-Switching devices
-Impedance matching circuits
• Differences:
-FET’s are voltage controlled devices whereas BJT’s are current
controlled devices.
-FET’s also have a higher input impedance, but BJT’s have higher
gains.
-FET’s are less sensitive to temperature variations and more easily
integrated on IC’s.
- FET’s are also generally more static sensitive than BJT’s.
Introduction
JFET –Junction field effects transistor
• JFET is a unipolar-transistor
• Acts as a voltage controlled current device
• The current at two electrodes is controlled by the action of an
electric field at a reversed biased p-n junction.
Construction and characteristics of JFET
• Major part of structure is n-type material.
• Top of the n-type channel is connected
through an ohmic contact to a terminal -Drain
(D)
• The lower end-connected through an ohmic
contact to a terminal - Source (S)
• P-type materials are connected together and
to the Gate (G) terminal.
• JFET has two p-n junctions under no-bias
conditions.
Construction and characteristics of JFET
N-Channel JFET Circuit Layout
Working
JFET Operating Characteristics
There are three basic operating conditions for a JFET:
A. VGS = 0, VDS increasing to some positive
value
B. VGS < 0, VDS at some positive value
C. Voltage-Controlled Resistor
Voltage-Controlled Resistor
• The region to the left of the pinch-
off point is called the ohmic region.
• The JFET can be used as a
variable resistor, where VGS
controls the drain-source
resistance (rd). As VGS becomes
more negative, the resistance (rd)
increases.
ro
rd
(1 VGS )2
VP
p-Channel JFET
p-Channel JFET acts the same as the n-channel JFET,
except the polarities and currents are reversed.
P-Channel JFET Characteristics
As VGS increases more positively:
• the depletion zone increases
• ID decreases (ID < IDSS) eventually ID =
0A
Also note that at high levels of VDS the
JFET reaches a breakdown situation.
ID increases uncontrollably if
VDS> VDSmax.
JFET Symbol
MOSFETs
• MOSFET
• Metal Oxide Semiconductor Field effect transistor is a unipolar transistor.
• It acts as a voltage-controlled current device.
• It is a device in which current at two electrodes drain and source is
controlled by the action of an electric field at another electrode gate
having in-between semiconductor and metal very a thin metal oxide layer
MOSFETs
MOSFETs have characteristics
similar to JFETs and additional
characteristics that make them
very useful.
Other name Insulated Gate FET
(IGFET)
There are 2 types:
1. Depletion-Type MOSFET
2. Enhancement-Type MOSFET
Depletion-Type MOSFET
Construction
• Drain (D) and Source (S)
connect to the to n-doped
regions.
• These N-doped regions are
connected via an n-channel.
• This n-channel is connected
to the Gate (G) via a thin
insulating layer of SiO2.
• The n-doped material lies on a
p-doped substrate that may
have an additional terminal
connection called SS.
Working
Depletion-type MOSFET in Depletion Mode
Depletion mode
The characteristics are similar to the JFET.
When VGS = 0V, ID = IDSS
When VGS < 0V, ID < IDSS
The formula used to plot the Transfer
Curve still applies: VGS 2
ID IDSS (1 )
VP
Symbol
Enhancement-Type MOSFET
Construction
• Drain (D) and Source (S)
connect to the to n-doped
regions.
• No channel between D and S
• Gate (G) connects to the p-
doped substrate via a thin
insulating layer of SiO2.
• There is no channel.
• n-doped material lies on a p-
doped substrate that may
have an additional terminal
connection called SS.
Working
Symbol
Drain characteristic of E-MOSFET
Drain characteristic of D-MOSFET
VMOS
VMOS – Vertical MOSFET increases the surface area of the device.
Advantage:
• This allows the device to handle higher currents by providing it
more surface area to dissipate the heat.
•VMOSs also have faster switching times.
CMOS
CMOS – Complementary MOSFET p-channel and n-channel MOSFET on
the same substrate.
Advantage:
• Useful in logic circuit designs
• Higher input impedance
• Faster switching speeds
• Lower operating power levels