Scribd
Upload
18 views7 pages

MEMS Optical Switch Fabrication Guide

The document describes optical switches, specifically MEMS optical switches that utilize micro-electro-mechanical systems to route optical signals without converting them to electrical form. It outlines various microfabrication techniques used in the production of these switches, including bulk micromachining and surface micromachining. Additionally, it details the fabrication processes for both the top and bottom wafers involved in creating the MEMS optical switch components.

Uploaded by

durgacharya135
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
18 views7 pages

MEMS Optical Switch Fabrication Guide

The document describes optical switches, specifically MEMS optical switches that utilize micro-electro-mechanical systems to route optical signals without converting them to electrical form. It outlines various microfabrication techniques used in the production of these switches, including bulk micromachining and surface micromachining. Additionally, it details the fabrication processes for both the top and bottom wafers involved in creating the MEMS optical switch components.

Uploaded by

durgacharya135
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd

Digital M×N Optical Switch.

What is Optical Switch ?


Optical switching refers to the process of selectively routing or switching optical
signals within a network by directing them to different output ports. This is done
using various optical techniques without converting the signals to electrical form.
MEMS Optical switches.
MEMS optical switches are based on micro-electro-mechanical systems, which use
opical micro-mirrors or optical micro-mirror arrays to change the direction of lighe
beams to switch optical paths. The pricniple of MEMS optical switches is very
simple. When the light is exchanged, the angle of the MEMS micro-mirror is moved
or changed by the drive of the electrostatic force or the magnetic force, and the
input is switched to the different output terminals of the optical switch to realize the
switching and on-off of the optical path.
Microfabrication Techniques.
1. Bulk Micromachining.
2. Surface Micromachining.
3. Wafer Bonding.
4. DRIE(Deep Reactive Ion Etching)
5. Metal Coating.
6. LPCVD/ PECVD
7. Photolithography.
8. Sacrificial Layer Removal.
Bulk Micromachining Process.
In bulk micromachining process it includes fabricating first a top wafer and then the bottom
wafer.
1. Top Wafer(SOI) Micromirror Plate Fabrication.
a. Start with SOI Wafer
Device layer(30μm)
30 μm device layer.
2 μm BOX (Buried Oxide)
400 μm handle layer. Handle layer(400μm)

a
2. Oxidation and Wet Etching.
The wafer is oxidized and then a 5μm gap is defined by a wet etching
proces with KOH solution as shown in the figure 1(b) and (c).
3. Grow Etch Mask. b
A 1μm thick thermal silicon oxide film is grown
and used as an etch mask in etching top silicon as
d
shown in Fig. 1(d).
4. Etch Cantilever Beam Backside.
And then the backside of the cantilever c
beam is etched with a KOH solution as e
shown in Fig. 1(e)
5. Create Bumper Structure.
The wafer is oxidized again, and 2μm thick silicon oxide film on the f
top of silicon salient in 5μm high is defined by a wet etching process with HF solution as shown
in Fig. 1(f). The bumper is defined as the structure of silicon salient covered with silicon oxide
film.
Bottom Wafer(electrode side) Fabrication.
1. The bottom slilicon wafer in 500μm thick, shown in fig g
1(g). is oxidized and etched by HF and KOH →
solution in sequence. h
2. The etched depth by KOH is 20μm. By repeating the process
mentioned above, but a difference in etched depth by KOH solution.
The second and third etched depth is 10μm and 5μm, respectively.
i
3. As a result, an eight-tarraced silicon structure is successfully
achieved.
4. Thermal oxide of 2μm is grown, and a poly-silicon film in
1.8μm thickness are deposited by low pressure chemical
j
vapor deposition(LPCVD). The poly-silicon film is dense boron
doped to reduce the resistivity. After that the bottom electrodes and k
pads are patterned using Deep Reactive Ion Etching(DRIE) technology
and HF solution in sequence.
l

You might also like