Materials Properties for Nanoelectronics
(NANENG 171)
Lecture 5
Introduction to Diffusion
Dr. Shaimaa Ali
smohamed@[Link]
Image Credit: imred/[Link]
Learning Objectives
1. Name and describe the two atomic mechanisms of diffusion.
2. Distinguish between steady-state and nonsteady state diffusion.
3. Understand Fick’s first and second laws equations form and define all
parameters.
4. Define the Factors that influence the diffusion
5. Understand the importance of Diffusion in semiconductor technology
5.1 Introduction
Diffusion is a mass transport by the atomic motion
Courtesy Ford Motor
Company; bottom
right: © BRIAN
KERSEY/UPI/Landov
LLC; bottom inset: ©
iStockphoto.)
[Link]
5.1 Introduction
Interdiffusion, or impurity diffusion
The phenomenon of diffusion may be
demonstrated with the use of a
diffusion couple, which is formed by
joining bars of two different metals
together so that there is intimate
contact between the two faces; this is
illustrated for copper and nickel in
Figure 5.1, which includes schematic
representations of atom positions and
composition across the interface.
This couple is heated for an extended
period at an elevated temperature
(but below the melting temperature of
both metals) and cooled to room
temperature. Chemical analysis will
reveal a condition similar to that
represented in Figure 5.2—namely,
pure copper and nickel at the two
extremities of the couple, separated
by an alloyed region.
5.2 Diffusion Mechanisms
From an atomic perspective, diffusion is just the stepwise migration of atoms from lattice site to
lattice site. In fact, the atoms in solid materials are in constant motion, rapidly changing
positions. For diffusion to occure, two conditions must be met:
(1)there must be an empty adjacent site,
(2)the atom must have sufficient energy to break bonds with its neighbor atoms .
Two diffusion Mechanisms
Vacancy Diffusion: Interchange of an atom to an adjacent vacant
Position.
Intestinal Diffusion: diffusion involves atoms that migrate from an
interstitial position to a neighboring one that is empty
ex: hydrogen, carbon, nitrogen, and oxyge
5.3 Steady-State Diffusion:
Diffusion is a time-dependent process—is the quantity of an
element that is transported within another is a function of
time. This rate is frequently expressed as a diffusion flux
(J)
Measure the rate of mass transfer by Flux
Flux is the mass or (moles)moving
through a given area per length of
time (Kg m-2S-1)
= or
1 𝑑𝑀
𝐽=
𝐴 𝑑𝑡
Steady-State diffusion is when
the rate of diffusion is time
independent
If the diffusion flux does not change with
time, a steady-state condition exists. One
common example of steady-state
diffusion is the diffusion of atoms of a
gas through a plate of metal for which the
concentrations (or pressures) of the
diffusing species on both surfaces of the
plate are held constant.
When concentration C is plotted versus
position (or distance) within the solid x,
the resulting curve is termed the
concentration profile; the slope at a
particular point on this curve is the
Concentration Gradient
concentration gradient:
Steady-State diffusion is when
the rate of diffusion is time
independent
Example 2:
5.4 Non-Steady-State
Diffusion
Most practical diffusion
: situations are non-steady-state ones That is, the diffusion flux depend on
the concentration and time.
That is, the diffusion flux and the concentration gradient at some particular point in a solid vary
with time, with a net accumulation or depletion of the diffusing species resulting.
The concentration of diffusing species is a
function of both time and position C= C(x,
t)
Fick’s second law
And If the diffusion coefficient or diffusivity is independent of
composition
Solutions to this expression (concentration in terms of both position and time)
are possible when physically meaningful boundary conditions are specified
Solutions to the PDE require a meaningful
boundary conditions
where C x represents the concentration at depth x
after time t. The expression is the
Gaussian error function, values of which are given
in mathematical tables for various
values; a partial listing is given in Table 5.1.
5.5 Factors that Influence Diffusion
Diffusing Species: The magnitude of the diffusion
coefficient D is indicative of the rate at which atoms
diffuse. The diffusing species as well as the host material
influence the diffusion coefficient.
Temperature: has a most profound influence on the
coefficients and diffusion rates.
The activation energy may be thought of as that energy required
to produce the diffusive motion of one mole of atoms. A large
activation energy results in a relatively small diffusion
coefficient.
Because D0, Qd, and R are all constants, Equation can
takes on the form of an equation of a straight line:
A straight line that have a slope and intercept of
Qd/2.3R and log D0, respectively.
5.6 Diffusion in Semiconductor Materials
One technology that applies solid-state diffusion is the fabrication of
semiconductor integrated circuits (ICs). millions of interconnected
electronic devices and circuits are embedded in one of the chip faces.
Single-crystal silicon is the base material for most ICs. In order for these
IC devices to function satisfactorily, very precise concentrations of an
impurity (or impurities) must be incorporated into minute spatial regions
in a very intricate and detailed pattern on the silicon chip; one way this is
accomplished is by atomic diffusion. Normally two heat treatments are
used in this process
1. pre-deposition step, impurity atoms are diffused into the silicon, often
from a gas phase normally at temperature range of 900 and 1000 oC and
for times typically less than one hour.
2. drive-in diffusion, is used to transport impurity atoms farther into the
silicon in order to provide a more suitable concentration distribution
without increasing the overall impurity content. This treatment is carried
out at a higher temperature than the predeposition one (up to about 1200
o
C ), and also in an oxidizing atmosphere so as to form an oxide layer on
the surface.
Summary
Two mechanisms for diffusion are possible: vacancy and interstitial. Vacancy diffusion occurs via the
exchange of an atom residing on a normal lattice site with an adjacent vacancy. For interstitial diffusion,
an atom migrates from one interstitial position to an empty adjacent one.
• For a given host metal, interstitial atomic species generally diffuse more rapidly
Two types of Diffusion:
- Steady-State Diffusion
- Nonsteady-State Diffusion
Factors that influence the diffusion
Diffusion in semiconductors