Dr.
Amit Kumar Singh EEE1001/ECS/VIT BHOPAL UNIVERSITY 1
Unit-3
EEE-1001
Semiconductor Devices: Introduction to semiconductors PN Junction Diode: Construction and
operation with characteristics - Rectifiers: Half-wave and Full-wave. Zener Diode: Construction and
operation with characteristics - Zener Regulator. BJT - Configuration – Characteristics –
C E Amplifier, SCR & MOSFET.
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Semiconductors Materials : Ge, Si, and GaAs.
Semiconductors are a special class of elements having a conductivity between that of a
good conductor and that of an insulator.
The three semiconductors used most frequently in the construction of electronic devices
are Ge, Si, and GaAs. In the first few decades following the discovery of the diode in
1939 and the transistor in 1947 germanium was used almost exclusively because it was
relatively easy to find and was available in fairly large quantities.
At the time, scientists were aware that another material, silicon, had improved
temperature sensitivities, but the refining process for manufacturing silicon of very high
levels of purity was still in the development stages. Finally, however, in 1954 the first
silicon transistor was introduced, and silicon quickly became the semiconductor material
of choice.
The result was the development of the first GaAs transistor in the early 1970s. This new
transistor had speeds of operation up to five times that of Si
As noted earlier, Si has the benefit of years of development, and is the leading
semiconductor material for electronic components and ICs. In fact, Si is still the
fundamental building block for Intel’s new line of processors.
Amit Kumar Singh EEE1001/ECS/VIT BHOPAL UNIVERSITY
Semiconductors Materials : Ge, Si, and GaAs.
Amit Kumar Singh EEE1001/ECS/VIT BHOPAL UNIVERSITY
Semiconductors Materials : Ge, Si, and GaAs.
conduction and valence bands of an insulator,
Covalent bonding of the silicon a semiconductor, and a conductor
atom.
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Semiconductors Materials : Ge, Si, and GaAs.
The term intrinsic is applied to any semiconductor material that has been
carefully refined to reduce the number of impurities to a very low level—
essentially as pure as can be made available through modern technology.
A semiconductor material that has been subjected to the doping
process is called an
extrinsic material.
n-Type p-Type
Material Material
Diffused impurities with five valence electrons are The diffused impurities with three valence electrons
called donor atoms are called acceptor atoms.
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Semiconductors Materials : Ge, Si, and GaAs.
In an n-type material, the electron is called the majority
carrier and the hole the minority carrier
In a p-type material the hole is the majority carrier and the
electron is the minority carrier
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Semiconductor Diode : No Applied Bias (V D = 0 V)
.
This region of uncovered positive and negative ions is called the
depletion region due
to the “depletion” of free carriers in the region
demonstration that the net carrier flow is zero at the external terminal of the device
when V D = 0 V
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Semiconductor Diode : Reverse Bias Condition Bias (V D <0 V)
.
The current that exists under reverse-bias conditions is
called the reverse saturation current and is represented by
Is .
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Semiconductor Diode : Forward Bias Condition Bias (V D >0
V)
.
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Semiconductor Diode : Forward Bias Condition Bias (V D >0
V)
.
where Is is the reverse saturation current VD is the applied forward-bias voltage
across the diode n is an ideality factor, which is a function of the operating
conditions and physical construction; it has a range between 1 and 2 depending
on a wide variety of factors
The voltage VT in Eq. is called the thermal voltage
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V-I Characterstics
Breakdown Region
Silicon semiconductor diode characteristics.
Semiconductor Diode : Forward Bias Condition Bias (V D >0
V)
.
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Semiconductor Diode : Half Wave Rectifier
.
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Ripple Factor : The output Current contains both A.C & D.C Components . The
Ripple factor measures the percentage of A.C components in the Rectified Output
Efficiency : The efficiency of a rectifier is defined as the ratio of the output DC power to
the input AC power. It measures how effectively the rectifier converts AC power into DC power.
Semiconductor Diode : Half Wave Rectifier
.
Semiconductor Diode :
Q1. An a.c. supply of 230 V is applied to a half-wave rectifier circuit through a
transformer of turn ratio 10 : 1. Find (i) the output d.c. voltage and (ii) the peak
inverse voltage. Assume the diode to be ideal.
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Semiconductor Diode : Half Wave Rectifier
.
Solutions :
Primary to secondary turns is
During the negative half-cycle of a.c. supply, the diode is
reverse biased and hence conducts no current. Therefore,
the maximum secondary voltage appears across the diode.
Max. secondary voltage is
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Semiconductor Diode : Half Wave Rectifier
.
Semiconductor Diode :
Q2. A crystal diode having internal resistance rf = 20Ω is used for half-wave rectification. If the
applied voltage v = 50 sin ω t and load resistance RL= 800 Ω, find
(i) Im, Idc, Irms (ii) A.C. power input and D.C. power output (iii) D.C. output voltage (iv) Efficiency of
Rectification.
Solution :
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Semiconductor Diode : Half Wave Rectifier
.
Semiconductor Diode :
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Semiconductor Diode : Full Wave –Center tap Rectifier
.
Network conditions for the positive region of vi
Centre-tapped transformer full-wave
rectifier.
Network conditions for the negative region of vi
PIV Calculations
Semiconductor Diode : Full Wave-Bridge Rectifier
.
For +ve Half Cycle :
Semiconductor Diode : Full Wave Rectifier
.
For -ve Half Cycle :
PIV :
Semiconductor Diode : Full Wave Rectifier
.
Determine the output waveform for the network of given Fig. and
calculate the output dc level and the required PIV of each diode
Semiconductor Diode : Full Wave Rectifier
.
Determine v0 and the required PIV rating of each diode for the
configuration of . In addition, determine the maximum current through
each diode
Semiconductor Diode : Full Wave Rectifier
.
Sketch vo for the network of given Figure and determine the dc voltage
available
Semiconductor Diode : Zener Diode
.
Approximate equivalent circuits for the
Zener diode in the three possible regions
of application.
Semiconductor Diode : Zener Diode
.
Q1. For the circuit shown in Fig.1 (i), find : (i) the output voltage (ii) the voltage
drop across series resistance (iii) the current through zener diode.
Semiconductor Diode : Zener Diode
.
Solution
Semiconductor Diode : Zener Diode
.
Semiconductor Diode : Zener Diode
.
Q1. For the circuit shown in Fig. 2 (i),find the maximum and minimum values of
zener diode current.
Semiconductor Diode : Zener Diode
.
The first step is to determine the state of the zener diode. It is easy to see that for the given range of voltages (80 −
120 V), the voltage across the zener is greater than VZ (= 50 V). Hence the zener diode will be in the “on” state for
this range of applied voltages. Consequently, it can be replaced by a battery of 50 V as shown in Fig. .
Semiconductor Diode : Zener Diode
.
Semiconductor Diode : Zener Diode
.
Q3. A 7.2 V zener is used in the circuit shown in Fig. 3 and the load current is to
vary from 12 to 100 mA. Find the value of series resistance R to maintain a
voltage of 7.2 V across the load. The input voltage is constant at 12V and the
minimum zener current is 10 mA..
Semiconductor Diode : Zener Diode
.
Semiconductor Diode : Zener Diode
.
BJT
(a) Block representation, two-diode transistor analogy, and symbol of a n–p–n transistor;
(b) Block representation, two-diode transistor analogy, and symbol of a p–n–p transistor
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Operation of npn BJT
Majority charge carriers are electrons
(a) Biasing of a n–p–n transistor for normal operation; (b) operation of a n–p–n transistor
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BJT
Bipolar Junction Transistor : Since the base is lightly doped, there will be a smaller number of holes present there. Only a small percentage of electrons from the emitter will recombine with holes in the base
region. Only around two per cent of the electrons from the emitter recombine with the holes that are present in base region.
The electrons from the emitter region will arrive near the CB depletion region. Due to large CB bias voltage, electrons will be pulled across the CB junction by the positive terminal of the collector. The collector thus
collects the 98 per cent of the electrons emitted by the emitter.
BJT
Bipolar Junction Transistor :
BJT
Bipolar Junction Transistor : Flow of current in PNP & NPN .
BJT
Common Emitter Configuration : Experimental set up
BJT
Common Emitter Configuration : Input Characteristics
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BJT
Common Emitter Configuration : Output Characteristics
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D.C. Load
Line
Movement of the Q-point with increasing Effect of an increasing level
level of IB. of RC on the load line and the
Q-point
Effect of lower values of VCC on the load line and the Q-point.
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Example: An n–p–n transistor has been shown provided with biasing voltage V BE and VCB. Calculate
the values of IC and IE if αdc is 0.96 and IB is 80 mA. Also calculate the value of βdc.
Solution:
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Example: In an n–p–n transistor in the common emitter configuration, an ac input signal of ± 40 mV is
applied as shown in circuit below. The dc current gain, βdc and ac current gain βac are given as 80 and 100,
respectively. Calculate the voltage amplification, AV of the amplifier. The IB versus VBE characteristic is
such that for VB = 0.7 V, IB = 12 μA and for Vi = ± 40 mV, Ib = ±4 μ A. Also calculate the dc collector
voltage.
Solution:
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Amit Kumar Singh EEE1001/ECS/VIT Bhopal University 54
aka IGFET
Unipolar device
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Drain and transfer characteristics for an n-channel depletion-type MOSFET
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Example: For an n-channel D-MOSFET, IDSS = 10 mA, VP = -4 V. What will be the value of ID for VGS
= 1 V?
Ans: 15.625 mA
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Amit Kumar Singh
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Amit Kumar Singh
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Drain and transfer characteristics for an n-channel enhancement-type MOSFET
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