ECE 3002- VLSI Design
Module 1 – MOS Transistor Theory
Non Ideal Effects
Dr. S. Umadevi
Associate Professor,
SENSE, VIT Chennai
Introduction
The saturation current increases less than quadratically with
increasing Vgs
Velocity saturation
Mobility degradation
Channel length modulation
Body Effect
Leakage currents
Sub-threshold conduction
Junction leakage
Tunneling
Temperature Dependence
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Channel Length Modulation
The reverse biased p-n junction between
the drain and the body forms a depletion
region with length L’ that increases with
Vdb. The depletion region effectively
shorten the channel length to: Leff = L – L’
Assuming the source voltage is close to
the body votage Vdb ~ Vds. Hence,
increasing Vds decrease the effective
channel length.
Shorter channel length results in higher
current
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Velocity Saturation
• Carriers in semiconductors typically move in response to an applied electric field.
• Carrier velocity is proportional to an applied electric field
• Velocity = mobility x electric field
• At very high electric fields this relationship ceases to be accurate
• The carrier velocity stops increasing (or saturates) in a one micrometer channel
length device with one volt across in the electric field is 104 V/cm.
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Mobility degradation
Body Effect
The potential difference between source and body Vsb <
0V -> leaves –ve ions -> increases channel width -> which
forces to increases the threshold voltage of the device.
Threshold voltage depends on:
Vsb
Process
Doping
Temperature
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Threshold Voltage
Vt
• increases with the source voltage,
• decreases with the body voltage,
• decreases with the drain voltage, and
• increases with channel length
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Leakage Current
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Subthreshold Conduction
The ideal transistor I-V model assumes current only flows from
source to drain when Vgs > Vt.
In real transistors, current doesn’t abruptly cut off below threshold,
but rather drop off exponentially
This leakage current when the transistor is nominally OFF depends
on:
process (eox, tox)
doping levels (NA, or ND)
device geometry (W, L)
temperature (T)
( Subthreshold voltage (Vt) )
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Junction Leakage
The p-n junctions between diffusion and the substrate or well for
diodes.
The well-to-substrate is another diode
Substrate and well are tied to GND and VDD to ensure these diodes
remain reverse biased
But, reverse biased diodes still conduct a small amount of current
that depends on:
Doping levels
Area and perimeter of the diffusion region
The diode voltage
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Tunneling
There is a finite probability that carriers will tunnel though the gate
oxide. This result in gate leakage current flowing into the gate
The probability drops off exponentially with tox
For oxides thinner than
15-20 Å, tunneling becomes a factor
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Temperature dependence
Transistor characteristics are influenced by temperature
m decreases with T
Vt decreases linearly with T
Ileakage increases with T
ON current decreases with T
OFF current increases with T
Thus, circuit performances are worst at high temperature
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Thank You
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