Analog Electronic Circuit Design

Course Code: 15 EC 2103 ---- CO2

Dr. G V Subbarao
Professor
Department of Electronics and Communication Engineering
 QUIZ
• How are you listening the voice of your professor if it low?

• What is the mechanism that helps in boosting the voice?

• Is it possible to control the ckt current using a diode?

• How does a water tap work?

• Can you have an electronic control to limit current though the

diode, similar to tap?
• If you want to get such a control what should we do?

• Do you know any

Dr. transistor?
G V Subbarao gvs0raos@[Link]
 Transistor
Types : N-P-N & P-N-P

Modes of Operation : CB, CC, CE

Width of Regions : Collector > Emitter > Base

Concentration of Regions : Emitter > Collector > Base

N P N Transistor P N P Transistor

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 Regions of Operation

Mode Emitter Base Jn Collector-Base Jn

Active Forward Reverse
Cutoff Reverse Reverse
Saturation Forward Forward

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 Quiz
1. What is the name of sandwiched layer in BJT?

2. Is BJT a current control device? Yes/No

3. Doping of Emitter is more and width of collector is more in BJT.

Yes/No
4. Base is narrower and very lightly doped. Why?

5. Why is it named as a bipolar device?

6. Is collector current more than that of the base? Yes/No

7. Suggest an electronic switch with 3 terminals and draw its transfer

characteristic.

Dr. G V Subbarao gvs0raos@[Link]

 CB Configuration

Base- Emitter Jn Forward biased and Base-Collector Jn Reverse biased

Draw CE and CB Configurations…..

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Operation of BJT-CB

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 Current Components
Base Transportation factor β =InC/InE
Emitter injection Efficiency γ =InE/IE

I nE I nC

I nB

I PE
I CBO
IC= ICBO +InC =α IE+ ICBO

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 Characteristics
Base width modulation or Early Effect or Punch through ?

VBE
VT VCE
Ic =I0 e (1+ )
VA

Discuss…What happens with an Increase in VCB ?

I/P Characteristic O/P Characteristic
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CE Configuration
Try to draw the CE Ckt…..

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 Estimate Collector current in terms of I B and ICBO

IC =αI E +ICBO
IC -ICBO
=I B +IC
α
 α   1 
IC =   IB +   ICBO
 1-α   1-α 
IC = I B +ICEO
Discuss.. Why CE configuration is mostly used?
Gives more power gain
R out to Rin Ratio is small and useful for coupling
Assignment: Compare various features of CE, CB and CC Configurations
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 Characteristic comparison
S No. Characteristics CB CE CC

Input Dynamic Very Low Low Very High

1.
Resistance (less than 100 ohm) (less than 1K) (750K)
Output dynamic Very High High Low
2.
resistance (less than 1M) (less than 45K) (50 ohm)

High Very High

3. Current Gain Less than 1
(100) (greater than 100)

4. Leakage Current Very Small Very Large Very Large

5. Voltage Gain About 150 About 500 Less than 1
6. Power Gain Medium Highest Medium
Phase relation
7. In Phase Out of Phase(180¤) In Phase
b/w i/p and o/p
Dr. G V Subbarao gvs0raos@[Link]
 CE configuration - Characteristics
VBE > 0.5; VCE< 0.3 v
IC<β IB Type Si Ge
VCE sat 0.2 0.1
VBE sat 0.8 0.3
VBE act 0.7 0.2
VBE > 0.5; VCE> 0.3v VBEcutin 0.5 0.1
IC = β I B VBECutoff 0 -0.1

Cut Off VBE < 0.5; VCE=VCC

 QUIZ
1. Current gain in CE amplifier is more than CB. Yes/No
2. Output resistance of CE amplifier is more than that of CB. Yes/No
3. Early effect is observed in saturation region of BJT characteristics Yes/No
4. What is the range of the input impedance of a common-base configuration?
A. A few ohms to a maximum of 50Ω B. 1 k to 5 k Ω
C. 100 k to 500 k Ω D. 1 M to 2 M Ω
5. Phase difference between i/p and o/p in CB amplifier is.……………

6. My friend will always oppose my decisions. I can model this using……

Amplifier.
a. CB b. CE c. CC d. None of the above
7. Which region of o/p characteristics can be used for amplifier applications?

Dr. G V Subbarao gvs0raos@[Link]

 Load line
Discuss the influence of load on transistor operation in the ckt

Develop the o/p loop equation…

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 Effect of Operating Point
What is operating point?

What happens with AC?

What is the effect of Load?

What is the effect Vcc?

Guess the o/p when operating point lies in Cut off
region………!
The goal of amplification in most cases is to increase the
amplitude of an ac signal without altering it.
Dr. G V Subbarao gvs0raos@[Link]
 Need for Biasing
• Faithful amplification through proper biasing

• Avoid Thermal runaway

• Stabilization against component variations

1. It should ensure proper zero signal collector current.

2. It should ensure that VCE does not fall below 0.5 V for Ge
transistors and 1 V for silicon transistors at any instant.
3. It should ensure the stabilization of operating point.
Dr. G V Subbarao gvs0raos@[Link]
 Fixing the Operating Point
• Stabilization techniques
- Biasing…. Stability Factors
I C I C I C
S= S'= S''=
I CO VBE 

Ic = β I B +ICEO  β I B +(1+ ) ICBO

(1+ )
S
I B
1 
I C
• Compensation techniques

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 Biasing Methods

• Fixed Bias

• Collector to base resistor

• Voltage Divider Bias

Dr. G V Subbarao gvs0raos@[Link]

 Fixed Bias
Vcc
Vcc -VBE Vcc -VCE =IC R C  IC 
=I B RC
RB
(1+ ) I C 
S  (1+ ) S' 
I B
1  VBE RB
I C
 Vcc -VBE 
Ic = β I B +(1+β) I CBO  β    (1+β) I CBO
 RB 
I C Ic
S ''   I B +ICBO 
 β
Discuss the
1. Effect of Temperature
2. Effect of transistor replacement
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Voltage Divider Bias

Dr. G V Subbarao gvs0raos@[Link]

Dr. G V Subbarao gvs0raos@[Link]
 Design of a CE amplifier
Design a CE amplifier with VCC= 12V, IC=4mA,
β = 100.
Assumptions:
VE=VCC/10; VCE=VCC/2; IR2= 9 IB; IR1 =10 IB ;
XCE= RE/10
V
V CC=
VRE
Rc
B ==–V
VBCC
9.I
V –V
/R10
B–10.I
CC V12
B= R
2 CE- / 10 = 1.2V
1 =0
RE RRC21 =R
= E1.2k
4.7
1.2/4=
k .33k
25.25k

CB = CC = 0.1 μF XCE = 1 / 2π f CE ; XCE = RE/10

Dr. G V Subbarao gvs0raos@[Link]

h- parameter model of BJT

Dr. G V Subbarao gvs0raos@[Link]

 Necessity of h parameter model
h – parameters are
– Real numbers up to radio frequencies.
– Easy to measure.
– Determined from the transistor static
characteristics.
– Convenient to use in circuit analysis and design.
– Easily convertible from one configuration to other.
– Supplied by manufactories.

Dr. G V Subbarao gvs0raos@[Link]

 h parameter model

v1  f1 i1 , v2   v1  h11i1  h12 v2  hii1  hr v2 ........... 1

i2  f 2 i1 , v2   i2  h21i1  h22 v2  h f i1  ho v2 ...........  2 

Dr. G V Subbarao gvs0raos@[Link]

Transistor Amplifier

Dr. G V Subbarao gvs0raos@[Link]

 Amplifier Analysis
i2 h f i1  ho v2 hf
Ai    h f  ho RL A i  A i =
i1 i1 1  ho RL
v1 hi i1  hr v2 h f hr
Zi    hi 
i1 i1 YL  ho
v2 Ai RL
Av  
v1 Zi
i2 hr h f
Yo   h0 
v2 Rs  h1
v2 Av Ri
A vs  
vs Z i  Rs
i2 Ai Rs
A is  
is Z i [Link] V Subbarao gvs0raos@[Link]
 Compute Ai, Av, Zi and Zo for
the amplifier shown in the fig.
(hie=1.1KΩ,hfe=50,hre=2.5x10-4,
hoe=24µ℧)

Compute Ai, Av, Zi and Zo for the

amplifier shown in the fig. hic=1.1KΩ,
hfc =-51, hrc=1, hoc=25µ℧.

Dr. G V Subbarao gvs0raos@[Link]

 Amplifier Analysis Using h parameters
Procedure:

1. Replace all DC sources with short circuit/internal resistances.

2. Replace all coupling capacitors with short circuit(AC only

model).

3. Replace Transistor with equivalent circuit of h parameter

model.

4. Determine the amplifier parameters using analysis.

Dr. G V Subbarao gvs0raos@[Link]
Simplify the circuit and determine amplifier parameters using
h parameter model, If
R s =1KΩ; R 1 =50KΩ; R 2 =2KΩ;R c =1KΩ;R L =1.2kΩ and
h f = 50;h i =1.1kΩ; h r =2.5X10 4 ;h o =25X10 6 A / V

Dr. G V Subbarao gvs0raos@[Link]

 h f
R L  545.45;
'
Ai =  49.32
1  ho R L
'

Ri  1093 ; R 'i  Ri //R1 //R2  696.9 ;

Ai R ' L
Av =  24.61
Ri
hr h f
Y0  h0  '  1.7889 X 105 ; R ' s  R s // R 1 // R 2
R s  hi
1
Z0   540
Y0
Dr. G V Subbarao gvs0raos@[Link]
 Hybrid Pi model

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R – C Coupled Amplifier

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 Simplification
1. Determine DC operating point and calculate small
signal parameters.
2. Convert to the AC only model.
– DC Voltage sources are shorts to ground
– DC Current sources are open circuits
– Large capacitors are short circuits
– Large inductors are open circuits
3. Replace transistor with small signal model.
4. Simplify the circuit as much as necessary

Dr. G V Subbarao gvs0raos@[Link]

Mid frequency Analysis
using
Hybrid Pi Model

Dr. G V Subbarao gvs0raos@[Link]

 Rc Rc
 g m vb ' e -g m I b rb'e
I0 Rc  Ri R c +R i
Current Gain A i   
Ib Ib Ib
Rc Rc
 -g m rb'e   h fe
R c +R i R c +R i

V0 -g m v b'e rei -g m I b rb'e rei

Voltage Gain A v = = =
Vi I b (rb'b+ rb'e ) I b (rb'b+ rb'e )
h fe rei
- h ie  rb'b+ rb'e
I b h ie
 0VT
Input Resistance r =
Ic Vout
output Resistance ro =
Dr. G V Subbarao gvs0raos@[Link] IC
Low frequency Analysis

Dr. G V Subbarao gvs0raos@[Link]

 Rc
 g m vb ' e
 1 
Rc   Ri  
I0  jX c 
h fe Rc
A i Low   
Ib Ib  1 
Rc   Ri  
 jCc 
h fe Rc (R c  R i ) Ai (R c  R i )
 
 1   1 
(R c  R i ) Rc   Ri   Rc   Ri  
 jCc   jCc 
Ai Ai 1
   fl 
 j   jf l  2 Cc (R c  R i )
1   1  f 
 Cc (R c  R i )   
Dr. G V Subbarao gvs0raos@[Link]
 -g m I b rb'e R c R i
 1 
Rc +  Ri + 
V0  jωC c 
Voltage Gain A vLow = =
Vi I b h ie
-h fe R c R i -h fe R ci
 
 1   1 
h ie  R c +R i +  h ie 1+ 
 jωCc   jωCc (R c +R i ) 
Av
 R ci  R c / /R i
 j fl 
 1- f 
 

Dr. G V Subbarao gvs0raos@[Link]

High Frequency Anlaysis

Dr. G V Subbarao gvs0raos@[Link]

 Rc
 g m vb ' e
I0 Rc  Ri
Ai High  
Ib Ib
g m Rc
 
 1 
 Rc  Ri    j c 
 rb ' e 
 g m rb ' e Rc Ai
 
1  j crb ' e  Rc  Ri  1  j crb ' e 
Ai 1
  fh 
 f  2 crb ' e
1 j  
f
 h 
 h f e Rci Av
A v High  
hie (1  j  c rb'e )  f 
1 j  
f
 h 
Gain-band width product  Av f h
h fe Rc g m Rc
 
2 crb ' e Dr. Ri 
Subbarao
RcG V 2 c  Rc  Ri 
gvs0raos@[Link]
 Design of RC Coupled Amplifier
Design a CE amplifier with Av=100; Ic =2mA;
Icmin=1.75mA;Icmax=2.25.A;Rl=10Kand Vcc=12V
using BC 107 with hfemin=180; hfemax=460;anfd fl=500
hz
Design of Biasing Ckt:
1. Calculate Rc h fe Rl VT
and hie  h fe
Voltage Gain= hie I EQ
2. Calculate RE
Assume VCE=Vcc/2;
3. Obtain Rb from Stability factor S’’:
Dr. G V Subbarao gvs0raos@[Link]
 I c max  I c min I c min S 2
S ''  
 max   min  min (1   max )
RB
(1   max )(1  )
RE
S2 
RB
(1   max  )
RE
RB  RE (1   min )
VR2  VBE  I c min ;
 min
RBVcc R1VR2
R1  ; R2 
VR2 Vcc  VR2

Dr. G V Subbarao gvs0raos@[Link]

 • Choose capacitor values

1  h fe 10 10
CE  ; Cb  ; Cc  ;
2 f L hie 2 f L Z i 2 f L RL

R C =1.5K; R E =1.5K;
S''=1.785X10-6 ; S2  84.64; R B  154K

VR 2  4.85V ; R1  381K ; R 2  258 K ;

Ce  22  F ;Cb  1 F ;C c  0.33 F
Dr. G V Subbarao gvs0raos@[Link]