BJT
Fundamentals
Chapter 1
Topics Covered in Chapter 6
• Unbiased Transistor • Transistor Family
• Biased Transistor of Curves
• Transistor Currents • Power Ratings
• Subscripts • Typical hFE Values
• Transistor • Base Biased XSTR
Approximations • DC Load Line
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Unbiased Transistor
• Three doped regions: Emitter, Base, and
Collector
N type material Collector (medium doping)
P type material Base (light doping)
N type material Emitter (heavy doping)
• Two PN junctions: Emitter-Base and
Base-Collector
Unbiased Transistor
• NPN or PNP (watch direction of the arrow)
• Made from Silicon or Germanium
Biased Transistor
• DC biasing creates an environment
where the transistor can function as an
amplifier or a switch.
Biased Transistor
• The Base to Emitter diode is forward biased.
• The Base to Collector diode is reverse
biased.
Biased Transistor
• The emitter is grounded or common.
• The base-emitter junction behaves like
a diode.
• The base-collector junction acts like a
current source that is βdc times greater
than the base current.
Transistor Currents
• Current Flow
Conventional Flow
Electron Flow
Transistor Currents
• Current Flow
Conventional Flow
IE IB IC
Transistor Currents
• IC is 100 to 300 times larger than IB.
IB IC IE
IC IB
IE IC
Transistor Currents
• IC is 100 to 300 times larger than IB.
IB IC IE
IC IB
IE IC
IC IC
dc dc
IB IE
Transistor Currents
IC
dc
IB
IC dc IB
IE IB IC
IE IB dc IB
IE IB dc 1
Subscripts
• Subscripts are the same
– A voltage source (VBB)
• Subscripts are different
– A voltage between two
points (VBE)
• Single subscripts
– Node voltages with ground
as the reference (VC)
Transistor Approximations
• 1st Approximation
– Base-emitter diode is ideal (no voltage drop).
– bdcIB = IC
• 2nd Approximation
– VBE = 0.7 V
– bdcIB = IC
• 3rd Approximation
– VBE = 0.7 V
– bdcIB = IC
– Account for bulk resistance of the PN junctions.
Transistor Approximations
• 2nd Approximation
– VBE = 0.7 V
– bdcIB = IC
– VCE
Transistor Family of Curves
• Active Region
– Used for linear amplification
• Cutoff
– Used in switching applications
• Saturation
– Used in switching applications
• Breakdown
– Can destroy the transistor and should be
avoided.
Transistor Family of Curves
Transistor Family of Curves
Transistor Breakdown Voltages
• VCBO = 60 V
• VCEO = 40 V
• VEBO = 6V
• These are reverse breakdown ratings, one
of the transistor legs is not connected (e.g.
VCEO is the voltage collector to emitter with
the base not connected or “open.”)
Typical “Maximum Power” Ratings
• IC = 200 mA dc
• PD = 250 mW (for TA = 60 oC)
• PD = 350 mW (for TA = 25 oC)
• PD = 1 W (for TC = 60 oC)
Typical hFE Values
IC (mA) hFE(min) hFE(max)
0.1 40
1 70
10 100 300
50 60
100 30
Biasing a Transistor
• Creating an environment where the
transistor can function.
– Amplifier
– Switch
• DC Environment
DC Analysis - Base Biased Transistor
Solve for all voltages
and currents.
dc 200
DC Analysis - Base Biased Transistor
Solve for all
voltages and KVL
currents. VBB VRB VBE 0
VRB VBB VBE
VRB 5V 0.7V
VRB 4.3V
dc 200
Note: Use 2nd approx., VBE = 0.7 V
DC Analysis - Base Biased Transistor
Solve for all
VRB 4.3V
voltages and
currents.
VRB
IB
RB
4.3V
IB
dc 200 470 k
IB 9.15 A
DC Analysis - Base Biased Transistor
Solve for all
voltages and VRB 4.3V
currents. IB 9.15 A
IC dc IB
IC 200 x 9.15 A
dc 200
IC 1.83 mA
DC Analysis - Base Biased Transistor
Solve for all
voltages and VRB 4.3V
currents. IB 9.15 A
IC 1.83 mA
VRC IC x RC
dc 200
VRC 1.83 mA x 2.2 k
VRC 4.03V
DC Analysis - Base Biased Transistor
Solve for all
voltages and VRB 4.3V
currents.
IB 9.15 A
IC 1.83 mA
VRC 4.03V
dc 200
VCE VCC VRC
VCE 12V 4.03V
VCE 7.97V
DC Analysis - Base Biased Transistor
Solve for all
voltages and VRB 4.3V
currents. IB 9.15 A
IC 1.83 mA
VRC 4.03V
VCE 7.97V
dc 200
DC Analysis - Base Biased Transistor
•VBE = 0.7 V
•Kirchhoff’s
Voltage Law
dc 200 •Ohm’s Law
DC Analysis - Base Biased Transistor
Disadvantages
•Beta is needed
•Two Power
dc 200 Supplies are
required
DC Analysis - Base Biased Transistor
Solve for all
voltages and
currents.
dc 200
DC Analysis - Base Biased Transistor
Solve for all voltages and currents.
KVL
VCC VRB VBE 0
VRB VCC VBE
VRB 10V 0.7V
dc 200 VRB 9.3V
Note: Use 2nd approx., VBE = 0.7 V
DC Analysis - Base Biased Transistor
Solve for all voltages and currents.
VRB 9.3V
VRB
IB
RB
dc 200 9.3V
IB
1 M
IB 9.3 A
DC Analysis - Base Biased Transistor
Solve for all voltages and currents.
VRB 9.3V
IB 9.3 A
IC dc IB
dc 200 IC 200 x 9.3 A
IC 1.86 mA
DC Analysis - Base Biased Transistor
Solve for all voltages and currents.
VRB 9.3V
IB 9.3 A
IC 1.86 mA
dc 200 VRC IC x RC
VRC 1.86 mA x 2.2 k
VRC 4.09V
DC Analysis - Base Biased Transistor
Solve for all voltages and currents.
VRB 9.3V
IB 9.3 A
IC 1.86 mA
VRC 4.09V
dc 200 VCE VCC VRC
VCE 10V 4.09V
VCE 5.91 V
DC Analysis - Base Biased Transistor
Solve for all voltages and currents.
VRB 9.3V
IB 9.3 A
IC 1.86 mA
VRC 4.09V
dc 200 VCE 5.91V
DC Analysis - Base Biased Transistor
•VBE = 0.7 V
•Kirchhoff’s
Voltage Law
dc 200 •Ohm’s Law
DC Analysis - Base Biased Transistor
Disadvantage
•Beta is needed.
dc 200
DC Load Line
• Shows all possible operating points.
• Formed by drawing a line between the
saturation current (IC(sat)) and the cutoff
voltage (VCE(cutoff) ).
DC Load Line
DC Load Line
• Saturation Current (IC(sat))
– The maximum current that could possibly flow
through the transistor.
• Cutoff Voltage (VCE(cutoff) )
– The voltage present on the collector if the
transistor was shut off. It is the same as the
VCC power supply voltage.
DC Load Line
• Saturation Current (Ic(sat))
VCC
IC sat
RC
14V
IC sat
1167
IC sat 12 mA
DC Load Line
• Cutoff Voltage (VCE(cutoff) )
VCE cutoff VCC
VCE cutoff 14V
DC Load Line
The operating point is called the Q or quiescent point
and is determined by the base current.