COMPARATIVE ANALYSIS EFFECT OF
OPERATING TIME ON LOSS AND GAIN
CHARACTERISTICS OF QUANTUM DOT
LASER USING GROUP III NITRIDES.
Supervised By:
Dr. Md. Abdullah Al Humayun
Associate Professor
Department of EEE
Eastern University
Presented By:
Ramkrisno Sarker (191810116) 1
Md. Nawab Siraj Ud Daula (191810117)
Asaduzzaman (191810145)
OUTLINE
INTRODUCTION
PROBELEM STATEMENT
OBJECTIVE
METHODOLOGY
RESULT & DISCUSSION
CONCLUTION
FUTURE WORK & GOAL
INTRODUCTION
Firstly, effect of operating time of Laser characteristics has been analyzed
using InN, GaN, AlN Quantum Dot Laser(QDL). This Characteristics are:
Loss
Gain
Carrier Concentration
Spontaneous Emission Factor
Secondly, Rate of change of this characteristics has also been analyzed
Finally, from the outcome of this comparative analysis it is ascertained that
GaN Quantum Dot Laser (QDL) is the most promising one.
BASIC OF LASER
LASER = Light Amplification By Stimulated Emission Of Radiation.
A laser is a device that emits light through a process of optical
amplification based on the stimulated emission of electromagnetic
radiation.
Properties (Monochromatic and coherence, narrow line width )
Types (Gas, Solid-State, Semiconductor, and Dye Lasers)
Uses: In various fields such as telecommunications, medicine,
research, manufacturing, and entertainment. Some examples of laser
applications include laser cutting and welding, laser eye surgery, and
laser printers.
PROBLEM STATEMENT
• Designing a Quantum Dot Laser (QDL) can be a challenge due to the
availability of various materials with their own pros and cons for laser
construction. Selecting the right material is difficult.
OBJECTIVE
•To find out suitable semiconductor material to design Laser with improved
performance.
•To evaluate and compare the impact of operating time on the performance of
quantum dot lasers (QDLs) made from Group III Nitride materials.
•To gain a deeper understanding of the long-term stability and reliability of
QDLs made from Group III Nitride materials, and to provide a comprehensive
analysis of the effect of operating time on their performance.
TYPES OF SEMICONDUCTOR MATERIALS
Figure 1: Schematic diagram of Bulk, QW, QWR, QD Materials
i. Bulk : Electrons move all the directions
ii. Quantum Well (QW) : Electrons move in two direction, only one direction
is confined
iii. Quantum Wire (QWR) : Electrons move in one direction and two direction
is confined
iv. Quantum Dot (QD) : Electrons don’t move any direction, all direction are
confined.
NUMERICAL MODELING
• The photon lifetime τ is expressed as
τ- - - - - - - - (1)
- - - - - - - - (2) Where as,
τ = Photon Life Time
neq = noe-t/τ - - - - - - - (3) neq = Carrier Concentration
= - - - - - (4) c = Velocity of Light
= Loss
- - - - - - - (5) t = Operating time
- - - - - - - - - (6)
NUMERICAL MODELING
G = Go(c/ noe-t/τ )ln() - - - - (7)
Where as,
= ln(- - - - (8) G = Gain
G = Go(1/τ)ln() - - - - (9) No = Carrier Density
= Relative Confinement Factor
= Go(1/τ2)ln() - - - - (10) = Coefficient denoting the
Polarization anisotropy of the
G = Go(c/ neq)ln() - - - - (11)
spontaneous emission
= Go(c/ neq2)ln() - - - - (12) = The Normalized Spontaneous
Emission Spectrum
C = - - - - - - (13) h = Planck’s Constant
Eg (0) = Band gap Energy at 0K
Temperature
Vm = Mode Volume
Table 1: Equation Parameter Values
Parameter Values
C (cm/s) 3×10^10
Ρ 1.5
Γr 1
Fsp 1
h (eV) 4.1357× 10^-15
Vm (µm³) 1.8
Table 2: Equation Parameter Values of Different type materials
PARAMETER InN GaN AlN
Eg (0 K) (eV) 0.7 3.507 6.23
N (cm-³) 3.1833 × 1022 4.7896 × 1022 4.3874 × 1022
τ (µs) 1.394×10-8 5.778×10-8 3.062×10-8
Go (cm-1) 125 135 135
RESULT AND DISCUSSION
0.8 6
0.7
1)
5
Rate of Change of Loss(cm
-
0.6 InN QDL
InN QDL
GaN QDL 4
0.5 GaN QDL
AlN QDL
Loss(cm-1)
AlN QDL
0.4 3
0.3
2
0.2
1
0.1
0 0
0 10 20 30 40 50 0 10 20 30 40 50
Operating time(ns) Operating time(ns)
Figure 2.1 : Operating time dependence of Figure 2.2 : Operating time dependence Rate of
Loss of InN, GaN, and AlN QDL change of loss InN, GaN, and AlN QDL
RESULT AND DISCUSSION
160 0.02
1s -1)
140
-
InN QDL 0.015
120
Rate of change of Gain(cm
GaN QDL InN QDL
Gain(cm-1)
100 AlN QDL GaN QDL
0.01
80 AlN QDL
60 0.005
40
20
0
0 2 4 6 8 10 0 10 20 30 40 50
Operating time(ns) Operating time(ns)
Figure 3.1 : Operating time dependence of Figure 3.2 : Operating time dependence Rate of
Gain of InN, GaN, and AlN QDL change of Gain InN, GaN, and AlN QDL
RESULT AND DISCUSSION
20
Rate of Change of Carrier Concentration(cm-3)
22
x 10 x 10
Carrier Concentration(cm-3) 5 2.5
4 InN QDL 2
GaN QDL InN QDL
AlN QDL GaN QDL
3 1.5 AlN QDL
2 1
1 0.5
0 0
0 10 20 30 40 50 0 10 20 30 40 50
Operating time(ns) Operating time(ns)
Figure 4.1 : Operating time dependence of Figure 4.2 : Operating time dependence Rate of
Carrier Concentration of InN, GaN, and change of Carrier Concentration InN, GaN, and
AlN QDL AlN QDL
RESULT AND DISCUSSION
0.012
0.08
Rate of Chnage of Gain(cm -1)
0.01
InN QDL InN QDL
0.008 GaN QDL 0.06 GaN QDL
Gain(cm-1)
AlN QDL AlN QDL
0.006
0.04
0.004
0.02
0.002
0 0
0 0.01 0.02 0.03 0.04 0.05 0 0.01 0.02 0.03 0.04 0.05 0.06
Loss(cm-1) Loss(cm-1)
Figure 5.1 : Loss dependence of Gain of Figure 5.2 : Loss dependence Rate of change of
InN, GaN, and AlN QDL Gain InN, GaN, and AlN QDL
RESULT AND DISCUSSION
140 0.46
Rate of Change of Gain(cm-1)
120 0.44
InN QDL InN QDL
100 GaN QDL 0.42 GaN QDL
AlN QDL AlN QDL
Gain(cm-1)
80 0.4
60 0.38
40 0.36
20 0.34
0 0.32
2 4 6 8 10 2 4 6 8 10
Carrier Concentration(cm-3) x 10
22
Carrier Concentration(cm-3) x 1022
Figure 6.1 : Carrier Concentration dependence Figure 6.2 : Carrier Concentration dependence
of Gain of InN, GaN, and AlN QDL Rate of change of Gain InN, GaN, and AlN QDL
RESULT AND DISCUSSION
0.025 0.7
Spontaneous Emission Factor (C)
InN QDL 0.6
0.02 GaN QDL
AlN QDL 0.5 InN QDL
GaN QDL
Loss(cm-1)
0.015
0.4 AlN QDL
0.01 0.3
0.2
0.005
0.1
0 0
2 4 6 8 10 0 5 10 15
Carrier Concentration(cm-3) x 1022 Operating time(ns)
Figure 7.1 : Carrier Concentration dependence Figure 7.2 : Operating time dependence Spontaneous
of Loss of InN, GaN, and AlN QDL Emission Factor InN, GaN, and AlN QDL
CONCLUSION
• This study highlights the impact of loss and gain characteristics on
operating time and carrier concentration.
FUTURE SCOPE
• To analyze the effect of other parameters like: Temperature, Cavity
Length, Threshold Current, Wavelength etc.
While group III Nitride is a popular material for quantum dot laser
fabrication, there are many other materials and structures that could be
explored for their potential to improve the performance of these devices.
Future research could investigate new materials.
THANK
YOU