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Basic BJT Amplifiers Overview

This chapter discusses basic BJT amplifier configurations including common-emitter, common-base, and emitter-follower amplifiers. It analyzes these configurations using small-signal models and determines expressions for voltage gain, input and output resistances. The chapter also covers multistage amplifiers such as cascode and Darlington pair configurations. Analysis techniques include developing small-signal equivalent circuits and determining key amplifier parameters.

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0% found this document useful (0 votes)
32 views38 pages

Basic BJT Amplifiers Overview

This chapter discusses basic BJT amplifier configurations including common-emitter, common-base, and emitter-follower amplifiers. It analyzes these configurations using small-signal models and determines expressions for voltage gain, input and output resistances. The chapter also covers multistage amplifiers such as cascode and Darlington pair configurations. Analysis techniques include developing small-signal equivalent circuits and determining key amplifier parameters.

Uploaded by

siti
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd

Microelectronics

Circuit Analysis and Design

Donald A. Neamen

Chapter 6

Basic BJT Amplifiers

Neamen Microelectronics, 4e Chapter 6-1


McGraw-Hill
In this chapter, we will:
 Understand the concept of an analog signal and
the principle of a linear amplifier.
 Investigate how a transistor circuit can amplify a
small, time-varying input signal.
 Discuss and compare the three basic transistor
amplifier configurations.
 Analyze the common-emitter amplifier.
 Understand the ac load line & determine the
maximum symmetrical swing of the output.
 Analyze the emitter-follower amplifier.
 Analyze the common-base amplifier.
 Analyze multitransistor or multistage amplifiers.
 circuit. Understand the concept of signal power
gain in an amplifier

Neamen Microelectronics, 4e Chapter 6-2


McGraw-Hill
Common Emitter
with Time-Varying Input

Neamen Microelectronics, 4e Chapter 6-3


McGraw-Hill
IB Versus VBE
Characteristic

vbe
iB  I BQ (1  )  I B  ib
VT

Neamen Microelectronics, 4e Chapter 6-4


McGraw-Hill
ac Equivalent Circuit
for Common Emitter

Neamen Microelectronics, 4e Chapter 6-5


McGraw-Hill
Small-Signal Hybrid  Model for npn BJT

I CQ
gm 
VT
VT
r 
I CQ
g m r  

Phasor signals are shown in parentheses.

Neamen Microelectronics, 4e Chapter 6-6


McGraw-Hill
Small-Signal Equivalent Circuit Using
Common-Emitter Current Gain

Neamen Microelectronics, 4e Chapter 6-7


McGraw-Hill
Small-Signal Equivalent Circuit for
npn Common Emitter circuit

r
Av  ( g m RC )( )
r  RB
Neamen Microelectronics, 4e Chapter 6-8
McGraw-Hill
Problem-Solving Technique:
BJT AC Analysis

1. Analyze circuit with only dc sources to find Q


point.
2. Replace each element in circuit with small-
signal model, including the hybrid  model for
the transistor.
3. Analyze the small-signal equivalent circuit
after setting dc source components to zero.

Neamen Microelectronics, 4e Chapter 6-9


McGraw-Hill
Transformation of Elements
Element DC Model AC Model

Resistor R R

Capacitor Open C

Inductor Short L

Diode +V, rf – rd = VT/ID

Independent Constant + VS - Short


Voltage Source

Independent Constant IS Open


Current Source
Neamen Microelectronics, 4e Chapter 6-10
McGraw-Hill
Hybrid Model for npn with Early Effect

VA
ro 
I CQ

Neamen Microelectronics, 4e Chapter 6-11


McGraw-Hill
Hybrid p Model for pnp with Early Effect

Neamen Microelectronics, 4e Chapter 6-12


McGraw-Hill
Expanded Hybrid  Model for npn

Neamen Microelectronics, 4e Chapter 6-13


McGraw-Hill
h-Parameter Model for npn

r
hie  rb  r r hre 
r
h fe   1  1
hoe  
r ro

Neamen Microelectronics, 4e Chapter 6-14


McGraw-Hill
T-Model of an npn BJT

Neamen Microelectronics, 4e Chapter 6-15


McGraw-Hill
4 Equivalent 2-port Networks

Voltage Amplifier

Current Amplifier

Neamen Microelectronics, 4e Chapter 6-16


McGraw-Hill
4 Equivalent 2-port Networks

Transconductance
Amplifier

Transresistance
Amplifier

Neamen Microelectronics, 4e Chapter 6-17


McGraw-Hill
Common Emitter with Voltage-Divider
Bias and a Coupling Capacitor

Neamen Microelectronics, 4e Chapter 6-18


McGraw-Hill
Small-Signal Equivalent Circuit –
Coupling Capacitor Assumed a Short

Neamen Microelectronics, 4e Chapter 6-19


McGraw-Hill
npn Common Emitter
with Emitter Resistor

Neamen Microelectronics, 4e Chapter 6-20


McGraw-Hill
Small-Signal Equivalent Circuit:
Common Emitter with RE

Rib  r  (1   ) RE
Ri  R1 R 2 Rib
  RC Ri
Av  ( )
r  (1   ) RE Ri  RS

Neamen Microelectronics, 4e Chapter 6-21


McGraw-Hill
RE and Emitter Bypass Capacitor

Neamen Microelectronics, 4e Chapter 6-22


McGraw-Hill
Current Source Biasing and
Nonlinear Load

Neamen Microelectronics, 4e Chapter 6-23


McGraw-Hill
Small-Signal Equivalent Circuit with
Current Biasing and Nonlinear Load

Av   g m (ro rc )

Neamen Microelectronics, 4e Chapter 6-24


McGraw-Hill
dc AND ac Load Lines:
RE and Emitter Bypass Capacitor

Neamen Microelectronics, 4e Chapter 6-25


McGraw-Hill
Problem-Solving Technique:
Maximum Symmetrical Swing
1. Write dc load line equation that relates ICQ and
VCEQ.
2. Write ac load line equations that relates ic
and vce
3. In general, ic = ICQ – IC(min), where IC(min) is
zero or other minimum collector current.
4. In general, vce = VCEQ – VCE(min), where
VCE(min) is some specified minimum collector-
emitter voltage.
5. Combine above 4 equations to find optimum
ICQ and VCEQ.
Neamen Microelectronics, 4e Chapter 6-26
McGraw-Hill
Common-Collector
or Emitter-Follower Amplifier

Neamen Microelectronics, 4e Chapter 6-27


McGraw-Hill
Small-Signal Equivalent Circuit:
Emitter Follower

Rib  r  (1   )(ro RE )
Ri  R1 R2 R ib
(1   )(ro RE ) Ri
Av  ( )
r  (1   )( ro RE ) Ri  RS
Neamen Microelectronics, 4e Chapter 6-28
McGraw-Hill
Output Resistance:
Emitter Follower

r
Ro  RE ro
1 

Neamen Microelectronics, 4e Chapter 6-29


McGraw-Hill
Common-Base Amplifier

Neamen Microelectronics, 4e Chapter 6-30


McGraw-Hill
Small-Signal Equivalent Circuit:
Common Base

Av  g m ( RC RL )
RC r
Ai  g m ( )[ RE ]
RC  RL 1  

Neamen Microelectronics, 4e Chapter 6-31


McGraw-Hill
Input Resistance:
Common Base

Rie = r/(1+)

Neamen Microelectronics, 4e Chapter 6-32


McGraw-Hill
Output Resistance:
Common Base

RO = R C

Neamen Microelectronics, 4e Chapter 6-33


McGraw-Hill
Common Emitter Cascade Amplifier

Neamen Microelectronics, 4e Chapter 6-34


McGraw-Hill
Small-Signal Equivalent Circuit:
Cascade Amplifier

Neamen Microelectronics, 4e Chapter 6-35


McGraw-Hill
Darlington Pair

Ai  1  2

Neamen Microelectronics, 4e Chapter 6-36


McGraw-Hill
Cascode Amplifier

Neamen Microelectronics, 4e Chapter 6-37


McGraw-Hill
Small-Signal Equivalent Circuit:
Cascode Amplifier

Av   g m1 ( RC RL )

Neamen Microelectronics, 4e Chapter 6-38


McGraw-Hill

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