Bhadra 9 , 2077
Basic Electronics Engineering
Paschimanchal Campus (IOE), Pokhara
BCE…..BAM First Year / Second Part
Er. Suraj Tulachan
Computer / Elx. & Communication Department
Basic Electronics Engineering
• Pure form of semiconductor is known as Intrinsic
Semiconductor. Eg :- Pure form of Germanium(Ge) , Sillicon
(Si) most commonly and widely used. Gallium Arsenide(GaAs)
• Atomic no. of Sillicon(Si) is 14,it has 4 valance electrons.
• These 4 electrons are shared by four neighboring atoms in the
crystal structure by means of covalent bond.
• Fig. in next slide shows the crystal structure of Si at absolute
zero temperature (0K).
• Pure Semiconductor acts has poor conductivity (due to lack of
free electrons) at low or absolute zero temperature.
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1ev
Each electrons of valence band or valence electron forms a
complete covalent bond in Pure Intrinsic semiconductor at
absolute zero temperature (0) K .
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At room temperature some of the covalent bonds break up to
thermal energy as shown in fig above. The valance electrons
that jump into conduction band are called as free electrons
that are available for conduction.
Basic Electronics Engineering
Basic Electronics Engineering
• Intrinsic semiconductor conducts very small amounts of
current at room temperature.
• Current conduction capacity of Intrinsic semiconductor can be
increased significantly by adding a small amounts impurity to
the intrinsic semiconductor.
• By adding impurities it becomes Impure or Extrinsic
semiconductor. Impurities are called Doping Agent.
• This process of adding impurities is called as doping .
• The amount of impurity added is 1 part in 106 atoms.
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Basic Electronics Engineering
• If the added impurity is a pentavalent atom. Eg:- Phosphorus,
Arsenic, Bismuth, Antimony etc.
• Resulting semiconductor is called N-type semiconductor.
• A pentavalent impurity has five valance electrons.
• In crystal structure of N-type semiconductor material where
four out of five valance electrons of the impurity
atom(antimony) forms covalent bond with the four intrinsic
semiconductor atoms.
• The fifth electron is free.
• Free electron can be easily excited from the valance band to
the conduction band by the application of energy.
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• At room temperature almost all the fifth electrons from the
donor impurity atom are raised to conduction band.
• Therefore number of electrons in the conduction band
increases significantly.
• In N type semiconductor electrons are referred to as majority
carriers.
• Holes are the minority carriers in N type semiconductor.
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• If the added impurity is a trivalent atom. Eg:- Boron, Gallium ,
Indium etc.
• Resulting semiconductor is called P-type semiconductor.
• The three valance electrons of the impurity forms three
covalent bonds with the three neighboring atoms.
• Vacant exists in the fourth bond giving rise to the holes.
• Each trivalent atom contributes to one hole generation and
thus introduces a large no. of holes in the valance band.
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Holes
Crystalline structure of P-type Semiconductor
Basic Electronics Engineering
• In P type semiconductor , holes are majority carriers and
electrons are minority carriers.
• Each trivalent impurity atoms are capable of accepting an
electron, these are called as acceptor atoms.
• The conductivity of N type sc is greater than that of P type sc
as the mobility of electron is greater than that of hole.
• For the same level of doping in N type sc and P type sc, the
conductivity of an Ntype sc is around twice that of a P type sc.
Basic Electronics Engineering
Bhadra 9, 2077
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