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Overview of Power Semiconductor Switches

The document discusses different types of power semiconductor switches including power diodes, power transistors, and thyristors. It provides details about thyristor devices like SCR, GTO, triac, diac, and their characteristics, ratings, and applications in power electronics circuits.

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Bilal Hussain
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0% found this document useful (0 votes)
41 views46 pages

Overview of Power Semiconductor Switches

The document discusses different types of power semiconductor switches including power diodes, power transistors, and thyristors. It provides details about thyristor devices like SCR, GTO, triac, diac, and their characteristics, ratings, and applications in power electronics circuits.

Uploaded by

Bilal Hussain
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd

Power Semiconductor Switches

Power Diodes Power Transistors Thyristors


2 layer device 3 layer Device 4 layer Device

 Thyristor devices can convert and control large amounts of power in


AC or DC systems while using very low power for control.
 Thyristor family includes
1- Silicon controlled switch (SCR)
2- Gate-turnoff thyristor (GTO)
3- Triac
4- Diac
5- Silicon controlled switch (SCS)
6- Mos-controlled switch (MCT) 1
INTRODUCTION
 SCR is most popular of thyristor family due to its
Fast switching action , small size and high voltage and current
ratings.
 It is commonly used in power electronic applications.
 SCR has 3 terminals (gate provides control)
 SCR is turned on by applying +ve gate signal
when anode is +ve with repect to cathode.
 SCR is turned off by interrupting anode
current.

PNPN structure Symbol

2
TWO TRANSISTOR MODEL OF SCR

 Gate requires small positive pulse for short duration to turn SCR on.
Once the device is on, the gate signal serves no useful purpose and
can be removed.
3
SCR CHARACTERISTIC CURVE

4
IDEAL CHARACTERISTIC OF SCR

5
SCR RATINGS
(a) SCR Current Ratings
1- Maximum Repetitive RMS current Rating
 Average on-state current is the maximum average current value that can be
carried by the SCR in its on state.
 RMS value of nonsinusoidal waveform is simplified by approximating it by
rectangular waveform.
 This approximation give higher RMS value, but leaves slight safety factor.

6
 Average value of pulse is

 Form factor is

7
 Knowing the form factor for given waveform, RMS current
can be obtained from

I RMS=fo(IAVE)
 Maximum repetitive RMS current is given by

I T(RMS) =fo(IT(AVE))
 Conduction angle verses form factor
Conduction angle Form factor (fo)
(θ)
20° 5.0
40° 3.5
60° 2.7
80° 2.3
100° 2.0
120° 1.8
8
140° 1.6
160° 1.4
CONDUCTION ANGLE

 Duration for which SCR is on. It is measured as


shown

9
2- Surge Current Rating
Peak anode current that SCR can handle for brief duration.

3- Latching current
Minimum anode current that must flow through the SCR in order
for it to stay on initially after gate signal is removed.

4- Holding Current
Minimum value of anode current, required to maintain SCR in
conducting state.

10
(B) SCR VOLTAGE RATINGS

1- Peak repetitive forward blocking voltage


Maximum instantaneous voltage that SCR can block in forward
direction.
2- Peak Repetitive Reverse Voltage
Maximum instantaneous voltage that SCR can withstand,
without breakdown, in reverse direction.
3- Non-repetitive peak reverse voltage
Maximum transient reverse voltage that SCR can withstand.

11
(C) SCR RATE-OF-CHANGE RATINGS

1- (di/dt rating)
Critical rate of rise of on-state current. It is the rate at which anode current increases
and must be less than rate at which conduction area increases.
To prevent damage to SCR by high di/dt value, small inductance is added in series
with device. Vaue of required inductance is
L>= Vp
(di/dt)max

2- dv/dt rating
Maximum rise time of a voltage pulse that can be applied to the SCR in the off state
without causing it to fire. Unscheduled firing due to high value of dv/dt can be
prevented by using RC snubber circuit.

12
(D) GATE PARAMETERS
1- Maximum Gate Peak Inverse Voltage
Maximum value of negative DC voltage that can be applied without damaging the gate-
cathode junction.

2-Maximum Gate Trigger Current


Maximum DC gate current allowed to turn on the device.

3- Maximum gate trigger voltage


DC voltage necessary to produce maximum gate trigger current.

4- Maximum Gate Power Dissipation


Maximum instantaneous product of gate current and gate voltage that can exist during
forward-bias.

5- Minimum gate trigger voltage


Minimum DC gate-to-cathode voltage required to trigger the SCR.

6-Minimum gate trigger current 13


Minimum DC gate current necessary to turn SCR on.
Series and Parallel
SCR Connections

14
SCRs are connected in series and parallel to extend
voltage and current ratings.

For high-voltage, high-current applications, series-


parallel combinations of SCRs are used.

15
SCRS IN SERIES
 Unequal distribution of voltage across two series SCRs.

 Two SCRs do not share the same supply voltage. Maximum


voltage that SCRs can block is V1+V2, not 2VBO.
16
 Resistance equalization

 Voltage equalization

17
SCRS IN PARALLEL
 Unequal current sharing between two SCRs is shown:

 Total rated current of parallel connection is I1+I2, not 2I2.

18
 With unmatched SCRs, equal current sharing is achieved by
adding low value resistor or inductor in series with each SCR, as
shown below.

 Value of resistance R is obtained from:


R=V1-V2
I2-I1
19
SCR Gate-Triggering
Circuits

20
 Triggering circuits provide firing signal to turn
on the SCR at precisely the correct time.
 Firing circuits must have following properties
1. Produce gate signal of suitable magnitude and sufficiently
short rise time.
2. Produce gate signal of adequate duration.
3. Provide accurate firing control over the required range.
4. Ensure that triggering does not occur from false signals or
noise
5. In AC applications, ensure that the gate signal is applied
when the SCR is forward-biased
6. In three-phase circuits, provide gate pulses that are 120°
apart with respect to the reference point
7. Ensure simultaneous triggering of SCRs connected in series
or in parallel.
21
TYPES OF GATE FIRING SIGNALS

1. DC signals
2. Pulse signals
3. AC signals

22
(A) DC GATING SIGNAL FROM SEPARATE
SOURCE

23
DC GATING SIGNALS FROM SAME SOURCE

24
DISADVANTAGE OF DC GATING SIGNALS

1. Constant DC gate signal causes gate power


dissipation

2. DC gate signals are not used for firing SCRs in


AC applications, because presence of positive
gate signal during negative half cycle would
increase the reverse anode current and possibly
destroy the device.

25
(2) PULSE SIGNALS

1. Instead of continuous DC signal, single pulse or


train of pulses is generated.
2. It provides precise control of point at which SCR
is fired.
3. It provides electrical isolation between SCR and
gate-trigger circuit.

26
SCR Turnoff (Commutation)
Circuits

27
What is Commutation?
The process of turning off an SCR is called
commutation.

It is achieved by
1. Reducing anode current below holding current
2. Make anode negative with respect to cathode

 Types of commutation are:


1. Natural or line commutation
2. Forced commutation

28
NATURAL COMMUTATION

T
+

vs ~  R  vo


29
Supply voltage vs Sinusoidal

 3 t
0 2

Gate Pulse

 t

Load voltage vo
Turn off
occurs here
t
 

 3 t
0 2
30
Voltage across SCR
tc
SCR TURNOFF METHODS
1. Diverting the anode current to an alternate path

2. Shorting the SCR from anode to cathode

3. Applying a reverse voltage (by making the cathode


positive with respect to the anode) across the SCR

4. Forcing the anode current to zero for a brief period

5. Opening the external path from its anode supply voltage

6. Momentarily reducing supply voltage to zero 31


(1) CAPACITOR COMMUTATION

 SCR turnoff circuit using a transistor switch

32
 SCR turnoff circuit using commutation capacitor

 Value of capacitance is determined by:


C>= tOFF
0.693RL 33
(2) COMMUTATION BY EXTERNAL SOURCE

34
(3) COMMUTATION BY RESONANCE
 Series resonant turnoff circuit

35
 Parallel resonant turnoff circuit

36
(4) AC LINE COMMUTATION

37
Other members of
Thyristor Family

38
OTHER TYPES OF
THYRISTORS

1. Silicon Controlled Switch (SCS)

2. Gate Turnoff Thyristor (GTO)

3. DIAC

4. TRIAC

5. MOS-Controlled Thyristor (MCT)

39
1. SCS

Structure Symbol Equivalent circuit for SCS

40
(2) GTO

Structure Symbol GTO Ideal VI


characteristiccs

41
(3) DIAC

Structure Symbol VI characteristics of diac

42
(4) TRIAC

Structure Symbol SCR equivalent circuit

43
TRIAC VI CHARACTERISTICS

44
(5) MCT

Symbol equivalent circuit MCT VI characteristics

45
ASSIGNMENT#1
1. Does gate current has any effect on forward-
breakover voltage? Justify the statement
“Higher the gate current, lower is the forward
breakover voltage.”
2. Discribe briefly following members of thyristor
family.
 Programmable Unijunction Transistor (PUT)
 Silicon Unilateral Switch (SUS)
 Static Induction Thyristor (SITH)
 Light Activated Thyristor (LASCR)

46

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