Surface Micromachining
Chang Liu Micro Actuators, Sensors, Systems Group University of Illinois at Urbana-Champaign
Chang Liu
MASS
UIUC
Outline
Basic surface micromachining process Most common surface micromachining materials - polysilicon and silicon oxide
LPCVD deposition of polysilicon, silicon nitride, and oxide plasma etching for patterning structural layer micromachined hinges - fabrication process and assembly technique micromachined dimples and scratch drive actuators
Other sacrificial processing systems
metal sacrificial layer, plastics materials, etc.
Stiction and anti-stiction solutions Multi User MEMS Process (MUMPS)
process definition and layer naming conventions
Chang Liu
MASS
UIUC
Basic Sacrificial Layer Processing
Step 1: Deposition of sacrificial layer Step 2: patterning of the sacrificial layer Step 3: deposit structural layer (conformal deposition) Step 4: liquid phase removal of sacrificial layer Step 5: removal of liquid - drying.
Sacrificial wet etching
drying
Chang Liu
MASS
UIUC
Process and Chemical Compatibility
For a two layer process
The deposition of the structural layer must not damage the sacrificial layer
Thermal stability
The pattering of the structural layer must not damage the sacrificial layer
Chemical and thermal stability
The removal of the sacrificial layer must not damage the structural layer
Chemical and thermal stability
Chang Liu
MASS
UIUC
Surface Micromachined Inductor
Air bridge can be formed using sacrificial etching.
Chang Liu
MASS
UIUC
Micro Gears with Free-standing Chains
Chang Liu
MASS
UIUC
Inductor - By Lucent Technologies
Chang Liu
MASS
UIUC
Surface Micromachined, Out of Plane Structures
Chang Liu
MASS
UIUC
Hinges
Used in micro optics component assembly.
Chang Liu
MASS
UIUC
Hinge Fabrication
Step 1: deposition of sacrificial layer. Step 2: deposition of structural layer. Step 3: deposition of second sacrificial layer. Step 4: etching anchor to the substrate. Step 5: deposition of second structural layer. Step 6: patterning of second structural layer Step 7: Etch away all sacrificial layer to release the first structural layer.
MASS
Chang Liu
UIUC
For a four layer process
Sacrificial layers (Sac1, sac2) Structural layers (str 1, str 2)
Chang Liu
Str1 deposition must not affect sac1 Str1 patterning must not affect sac1 Sac2 deposition must not affect sac1 Sac2 deposition must not affect str1 Sac2 patterning must not affect str1 Sac2 patterning must not affect sac1 (if sac 1 is exposed) Str 2 deposition must not affect sac2 Str 2 deposition must no affect str1 Str 2 deposition must not affect sac1 Str 2 patterning must not affect sac2, str1, sac1 Sac 1 removal must not affect str 2, str1 Sac 2 removal must not affect str 2, str1
MASS
UIUC
To make things more complex and challenging
Certain layers need to be made of a certain material;
Stress control issues may dictate certain layer materials;
Electrical performances may dictate certain layer materials;
Economic issues may dictate certain layer materials;
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
This is helpful but
Every lab is different.
Every machine is different.
Every run may be different.
Chang Liu
MASS
UIUC
Metal Sacrificial Layers
Permalloy (>20m) PR 4620 (10m each) copper (9m each)
Aluminum (0.3m)
Chang Liu
MASS
UIUC
Out Of Plane Devices
Chang Liu
MASS
UIUC
Three Pillars of MEMS
Goals: Better performance Better yield Unique advantages Lower cost Higher yield
Design (physics, Principle)
Materials
Fabrication
Chang Liu
MASS
UIUC
Hybrid Fabrication Process
Combine the following processing styles into a single fabrication sequence
Bulk machining Surface machining Three dimensional assembly Wafer bonding (low temperature or high temperature)
Chang Liu
MASS
UIUC
Example: Scanning Probe Microscopy
Problems with existing processes
Etching of positive pyramids
Difficult tot control etch stop point; uniformity difficult to obtain
Utilizes silicon substrate
Can be replaced by lower costs substrates
Bulk etching
Long etching time involved to etch through the wafer Anisotropic etching: 1-2 micrometere/min DRIE: 1 micrometere/min, high costs of equipment and consumables
Chang Liu
MASS
UIUC
A hybrid method to fabricate SPM probes
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
Example: Solenoid
One way of realizing surface micromachined solenoid
Chang Liu
MASS
UIUC
A New Method
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
LPCVD Process
Temperature range 500-800 degrees Pressure range 200 - 400 mtorr (1 torr = 1/760 ATM) Gas mixture: typically 2-3 gas mixture Particle free environment to prevent defects on surface (pin holes)
Chang Liu
MASS
UIUC
A Laboratory LPCVD Machine
Chang Liu
MASS
UIUC
LPCVD Recipes for Silicon Nitride, Polysilicon, and Oxide
Polycrystalline silicon
Polysilicon is deposited at around 580-620 oC and can withstand more than 1000 oC temperature. The deposition is conducted by decomposing silane (SiH4) under high temperature and vacuum (SiH4> Si+2H2). Polysilicon is used extensively in IC - transistor gate
Silicon nitride
Silicon nitride is nonconducting and has tensile intrinsic stress on top of silicon substrates. It is deposited at around 800 oC by reacting silane (SiH4) or dichlorosilane (SiCl2H2) with ammonia (NH3) - SiH4+NH3 -> SixNy+ H. The PSG is knows to reflow under high temperature (e.g. above 900 oC); it is deposited under relatively low temperature, e.g. 500 oC by reacting silane with oxygen (SiH4+O2-> SiO2+2H2). PSG can be deposited on top of Al metallization. Silicon oxide is used for sealing IC circuits after processing. The etch rate of HF on oxide is a function of doping concentration.
Chang Liu MASS
Silicon oxide
UIUC
Other Structural or Sacrificial Materials
Structural layers
evaporated and sputtered metals such as Gold, Copper electroplated metal (such as NiFe) plastic material (CVD plastic) silicon (such as epitaxy silicon or top silicon in SOI wafer)
Sacrificial layers
photoresist, polyimide, and other organic materials copper
copper can be electroplated or evaporated, and is relatively inexpensive.
Oxide by plasma enhanced chemical vapor deposition (PECVD)
PECVD is done at lower temperature, with lower quality. It is generally undoped.
Thermally grown oxide
relatively low etch rate in HF.
Silicon or polysilicon
removed by gas phase silicon etching
Chang Liu MASS
UIUC
A PECVD Machine
Processing gases
Reaction chamber
RF plasma generator
Chang Liu
MASS
UIUC
Electroplating
Electroplating process description
Chang Liu
MASS
UIUC
Gas Phase Silicon Etching
XeF2
liquid phase under room temperature 2XeF2+Si => 2 Xe + SiF4
vapor phase under low pressure etches silicon with high speed [Link]
BrF3
Both are isotropic etchants
solid phase under regular pressure and room temperature vapor phase (sublimation) under low pressure BrF3 when reacted with water turns into HF at room temperature.
Chang Liu
MASS
UIUC
Organic Sacrificial Layer
Photoresist
etching by plasma etching (limited lateral etch extent) or by organic solvents (acetone or alcohol)
Polyimide
etching by organic solvents
Advantage
extremely low temperature process easy to find structural solutions with good selectivity
Disadvantage
many structural layers such as LPCVD are not compatible. Structure material must be deposited under low temperatures. Metal evaporation is also associated with high temperature metal particles, so it is not completely compatible and caution must be used.
Chang Liu MASS
UIUC
Criteria for Selecting Materials and Etching Solutions
Selectivity
etch rate on structural layer/etch rate on sacrificial layer must be high.
Etch rate
rapid etching rate on sacrificial layer to reduce etching time
Deposition temperature
in certain applications, it is required that the overall processing temperature be low (e.g. integration with CMOS, integration with biological materials)
Intrinsic stress of structural layer
to remain flat after release, the structural layer must have low stress
Surface smoothness
important for optical applications
Long term stability
Chang Liu
MASS
UIUC
Stiction = Sticking and Friction
Chang Liu
MASS
UIUC
Origin of Stiction
As the liquid solution gradually vaporizes, the trapped liquid exert surface tension force on the microstructure, pulling the device down. Surfaces can form permanent bond by molecule forces when they are close.
Chang Liu MASS
UIUC
Antistiction Method I - Active Actuation Method
Use magnetic actuation to pull structures away form the surface
reduced surface tension length of arm
Limitations
only works for structures with magnetic material.
Chang Liu
MASS
UIUC
Antistiction Method II Organic Pillar
Use organic pillar to support the structure during the liquid removal. The organic pillar is removed by oxygen plasma etching.
Chang Liu
MASS
UIUC
Antistiction Drying Method III - Phase Change Release Method
Supercritical CO2 Drying
Avoid surface tension by relaying on phase change with less surface tension than watervapor. * p. 128-129 Supercritical state: temp > 31.1 oC and pressure > 72.8 atm. Step 1: change water with methanol Step 2: change methanol with liquid carbon dioxide (room temperature and 1200 psi) Step 3: content heated to 35 oC and the carbon dioxide is vented. Free-standing cantilever beams upto 850 m can stay released.
Chang Liu
MASS
UIUC
Super Critical Drying
When a substance in the liquid phase at a pressure greater than the critical pressure is heated, it undergoes a transition from a liquid to a supercritical fluid at the critical temperature. This transition does not involve interfaces. Criteria
chemically inert, non-toxic low critical temperature
CO2
critical temperature 31.1 oC critical pressure 72.8 atm.(or 1073 psi)
Exchange methanol with liquid CO2 at 25oC and 1200 psi closeoff vessel and heated to 35 oC, no interface is formed. Vent vessel at a constant temperature above critical temperature.
Chang Liu
MASS
UIUC
Antistiction Method III - Self-assembled Monolayer
Forming low stiction, chemically stable surface coating using self-assembly monolayer (SAM) SAM file is comprised of close packed array of alkyl chains which spontaneously form on oxidized silicon surface, and can remain stable after 18 months in air. OTS: octadecyltrichlorosilane (forming C18H37SiCl3)
Chang Liu
MASS
UIUC
Result of SAM Assembly
Surface oxidation: H2O2 soak SAM formation
isopropanol alcohol rinse CCl4 rinse OTS solution CCl4 rinse
Chang Liu
MASS
UIUC
Structural-Sacrificial Compatibility
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
Chang Liu
MASS
UIUC
Foundry Process
Why:
Reduce the cost of development by providing standard and unusual processes at reasonable cost.
How:
Wafer sharing: many processes are performed on one wafer with many users sharing the mask.
Drawback: limited process materials and steps
Machine sharing: a users wafer is dedicated and ships back-andforth among several vendors.
Drawback: long development and transport time
Dedicated foundry: a users wafer is handled at one site by dedicated personnel.
Drawback: highest cost among all forms of foundry process.
Chang Liu
MASS
UIUC
The Importance of Design Rules
Chang Liu
MASS
UIUC
Example: MUMPS Process Multi User MEMS Process
Chang Liu
MASS
UIUC
The Versatility of MUMPS
Chang Liu
MASS
UIUC
Compatibility Table
Polysilicon Dry plasma etching HF wet etching Uncured photoresist Photoresist developer Organic rinse Baking Metal etchant
Chang Liu
Yes No
No
No No No No
Silicon oxide Photoresist (cured) Yes, slower Yes, slow speed Yes No, avoid long soak No Yes No No No No Yes Yes No No
Metal No. Sputtering is possible No, avoid long contact No No No No Yes
MASS
UIUC
Case 4.1, Electrostatic Actuators
Curved beam due to intrinsic stress in the cantilever. Helps:
Release
Hinders:
Capacitance calculation
Chang Liu
MASS
UIUC
How good is the design and process?
Design:
Advantage:
Direct integration of mechanical cantilever with FET transistors
Low noise sensor
Materials
Relatively difficult material Exotic wafer
Processes
Difficulties:
Cantilever release using web silicon etchant may be a problem
Requires foundry process and new process development if industrialized
Chang Liu
MASS
UIUC
Case 4.2: Torsional Capacitive Accelerometer
Chang Liu
MASS
UIUC
How good is this design?
Design:
Simple No electronics integration
Greater noise
Material:
Simple Readily available
Fabrication process
Does not require exotic materials or processes Sacrificial release may be a problem, like the previous case
Chang Liu
MASS
UIUC
Case 4.3: Membrane Parallel Plate Pressure Sensor
Chang Liu
MASS
UIUC
Evaluation
Design:
Results in hermetically sealed structures Result in large gap distance to reduce damping
Materials:
Silicon materials Doped silicon
Fabrication:
Length steps Delicate bonding and handling Process development is lengthy
Chang Liu
MASS
UIUC