TC4426

1
TC4427
TC4428

1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS

FEATURES GENERAL DESCRIPTION

2
■ High Peak Output Current ............................... 1.5A The TC4426/4427/4428 are improved versions of the
■ Wide Operating Range .......................... 4.5V to 18V earlier TC426/427/428 family of buffer/drivers (with which
■ High Capacitive Load they are pin compatible). They will not latch up under any
Drive Capability ........................ 1000 pF in 25 nsec conditions within their power and voltage ratings. They are
■ Short Delay Time ................................ <40nsec Typ not subject to damage when up to 5V of noise spiking (of
■ Consistent Delay Times With Changes in
Supply Voltage
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of reverse 3
■ Low Supply Current current (of either polarity) being forced back into their
— With Logic “1” Input .................................... 4mA outputs. All terminals are fully protected against up to 4kV of
— With Logic “0” Input ................................. 400µA electrostatic discharge.
■ Low Output Impedance ....................................... 7Ω As MOSFET drivers, the TC4426/4427/4428 can easily
■ Latch-Up Protected: Will Withstand >0.5A switch 1000 pF gate capacitances in under 30nsec, and
Reverse Current ................................. Down to – 5V provide low enough impedances in both the ON and OFF
■
■
Input Will Withstand Negative Inputs
ESD Protected .....................................................4kV
states to ensure the MOSFET's intended state will not be
affected, even by large transients. 4
■ Pinout Same as TC426/TC427/TC428 Other compatible drivers are the TC4426A/27A/28A.
These drivers have matched input to output leading edge
and falling edge delays, tD1 and tD2, for processing short
duration pulses in the 25 nanoseconds range. They are pin
ORDERING INFORMATION compatible with the TC4426/27/28.
Temperature
Part No.
TC4426COA
Package
8-Pin SOIC
Range
0°C to +70°C
FUNCTIONAL BLOCK DIAGRAM 5
TC4426CPA 8-Pin Plastic DIP 0°C to +70°C VDD
INVERTING
TC4426EOA 8-Pin SOIC – 40°C to +85°C OUTPUTS

TC4426EPA 8-Pin Plastic DIP – 40°C to +85°C

TC4426MJA 8-Pin CerDIP – 55°C to +125°C 300 mV

6
TC4427COA 8-Pin SOIC 0°C to +70°C OUTPUT
NONINVERTING
TC4427CPA 8-Pin Plastic DIP 0°C to +70°C OUTPUTS

TC4427EOA 8-Pin SOIC – 40°C to +85°C INPUT

TC4427EPA 8-Pin Plastic DIP – 40°C to +85°C 4.7V TC4426/TC4427/TC4428
TC4427MJA 8-Pin CerDIP – 55°C to +125°C
GND
TC4428COA 8-Pin SOIC 0°C to +70°C EFFECTIVE INPUT
C = 12 pF
TC4428CPA 8-Pin Plastic DIP 0°C to +70°C
NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers.
TC4428EOA
TC4428EPA
TC4428MJA
8-Pin SOIC
8-Pin Plastic DIP
8-Pin CerDIP
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
2. TC4428 has one inverting and one noninverting driver.
3. Ground any unused driver input.
7

TC4426/7/8-8 10/21/96
8
TELCOM SEMICONDUCTOR, INC. 4-245
 1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428

ABSOLUTE MAXIMUM RATINGS* Operating Temperature Range

C Version ............................................... 0°C to +70°C
Supply Voltage ......................................................... +22V
E Version .......................................... – 40°C to +85°C
Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V)
M Version ....................................... – 55°C to +125°C
Maximum Chip Temperature ................................. +150°C
Package Power Dissipation (TA ≤ 70°C)
Storage Temperature Range ................ – 65°C to +150°C
Plastic .............................................................730mW
Lead Temperature (Soldering, 10 sec) ................. +300°C
CerDIP ............................................................800mW
Package Thermal Resistance
SOIC ...............................................................470mW
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W *Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
PDIP RθJ-A ................................................... 125°C/W
above those listed under "Absolute Maximum Ratings" may cause perma-
PDIP RθJ-C ..................................................... 42°C/W nent damage to the device. These are stress ratings only and functional
SOIC RθJ-A ................................................... 155°C/W operation of the device at these or any other conditions above those
SOIC RθJ-C ..................................................... 45°C/W indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
PIN CONFIGURATIONS

NC 1 8 NC NC 1 8 NC NC 1 8 NC
IN A 2 7 OUT A IN A 2 7 OUT A IN A 2 7 OUT A
TC4426 TC4427 TC4428
GND 3 6 VDD GND 3 6 VDD GND 3 6 VDD
IN B 4 5 OUT B IN B 4 5 OUT B IN B 4 5 OUT B

2 7

2,4 7,5 2,4 7,5

4 5
INVERTING NONINVERTING
DIFFERENTIAL
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.

ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1 High Input Voltage 2.4 — — V
VIL Logic 0 Low Input Voltage — — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD –1 — 1 µA
Output
VOH High Output Voltage VDD – 0.025 — — V
VOL Low Output Voltage — — 0.025 V
RO Output Resistance VDD = 18V, IO = 10 mA — 7 10 Ω
IPK Peak Output Current Duty Cycle ≤ 2%, t ≤ 30 µsec — 1.5 — A
IREV Latch-Up Protection Duty Cycle ≤ 2% > 0.5 — — A
Withstand Reverse Current t ≤ 30 µsec
Switching Time (Note 1)
tR Rise Time Figure 1 — 19 30 nsec
tF Fall Time Figure 1 — 19 30 nsec
tD1 Delay Time Figure 1 — 20 30 nsec
tD2 Delay Time Figure 1 — 40 50 nsec
Power Supply
IS Power Supply Current VIN = 3V (Both Inputs) — — 4.5 mA
VIN = 0V (Both Inputs) — — 0.4 mA
NOTE: 1. Switching times are guaranteed by design.

4-246 TELCOM SEMICONDUCTOR, INC.

1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
1
TC4427
TC4428

ELECTRICAL CHARACTERISTICS (CONT.): Specifications measured over operating temperature

range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit 2
Input
VIH Logic 1 High Input Voltage 2.4 — — V
VIL Logic 0 Low Input Voltage — — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
Output
VOH
VOL
High Output Voltage
Low Output Voltage
VDD – 0.025
—
—
—
—
0.025
V
V 3
RO Output Resistance VDD = 18V, IO = 10 mA — 9 12 Ω
IPK Peak Output Current Duty Cycle ≤ 2%, t ≤ 300µsec — 1.5 — A
IREV Latch-Up Protection Duty Cycle≤ 2% > 0.5 — — A
Withstand Reverse Current t ≤ 300µsec
Switching Time (Note 1)
tR
tF
tD1
Rise Time
Fall Time
Delay Time
Figure 1
Figure 1
Figure 1
—
—
—
—
—
—
40
40
40
nsec
nsec
nsec
4
tD2 Delay Time Figure 1 — — 60 nsec
Power Supply
IS Power Supply Current VIN = 3V (Both Inputs) — — 8 mA
VIN = 0V (Both Inputs) — — 0.6
NOTE: 1. Switching times are guaranteed by design.

10
–8
Crossover Energy Loss 5
9 +5V
90%
8
INPUT
7
6 0V
10%
VDD= 18V tD1 tD2
5 tF tR
VDD
A • sec

4 4.7 µF 0.1 µF 90% 90%

OUTPUT

6
6
3 10% 10%
2,4 5,7 0V
INPUT OUTPUT
CL = 1000 pF Inverting Driver
2

+5V
90%

INPUT
–9
10 3 0V
10%
4 6 8 10 12 14 16 18
VDD VDD
90% 90%
tD1 tD2
INPUT: 100 kHz, square wave, tR tF
Thermal Derating Curves OUTPUT

7
tRISE = tFALL ≤ 10ns
1600
0V 10% 10%
1400
8 Pin DIP
Noninverting Driver
MAX. POWER (mW)

1200
8 Pin CerDIP
1000

800
8 Pin SOIC
600 Figure 1. Switching Time Test Circuit
400
NOTE: The values on this graph represent the loss seen by both drivers in a package
200
during one complete cycle. For a single driver, divide the stated values by 2. For a
0
0 10 20 30 40 50 60 70 80
AMBIENT TEMPERATURE (°C)
90 100 110 120
single transition of a single driver, divide the stated value by 4.
8
TELCOM SEMICONDUCTOR, INC. 4-247
 1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428

TYPICAL CHARACTERISTICS

Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage
100 100
2200 pF TA = 25°C 2200 pF TA = 25°C
80 80
1500 pF
1500 pF

tFALL (nsec)
tRISE (nsec)

60 60
1000 pF
1000 pF

40 40
470 pF
470 pF

20 20
100 pF 100 pF

0 0
4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18
VDD VDD

Rise TIme vs. Capacitive Load Fall TIme vs. Capacitive Load
100 100
5V 5V
TA = 25°C TA = 25°C
80 80
tFALL (nsec)
tRISE (nsec)

10V
60 60 10V
15V
15V
40 40

20 20

0 0
100 1000 10,000 100 1000 10,000
CLOAD (pF) CLOAD (pF)

Rise and Fall Times vs. Temperature Propagation Delay vs. Supply Voltage
60 60
C LOAD = 1000 pF CLOAD = 1000 pF
VDD = 17.5V t D2
50 50
DELAY TIME (nsec)

TA = 25°C
TIME (nsec)

40 40
tD1
30 30
tFALL

20 tRISE 20

10 10
–55 –35 –15 5 25 45 65 85 105 125 4 6 8 10 12 14 16 18
TEMPERATURE (°C) VDD

4-248 TELCOM SEMICONDUCTOR, INC.

1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
1
TC4427
TC4428

TYPICAL CHARACTERISTICS (Cont.)

Effect of Input Amplitude on Delay Time Propagation Delay Time vs. Temperature 2
60 60
C LOAD = 1000 pF VDD = 18V
VDD = 10V VLOAD= 1000 pF
50 50
DELAY TIME (nsec)

DELAY TIME (nsec)

t D2

40 40

30
t D2
30
t D1 3
20 t D1 20

10 10
0 2 4 6 8 10 –55 –35 –15 5 25 45 65 85 105 125
VDRIVE (V)

Quiescent Supply Current vs. Voltage

TA (°C)

Quiescent Supply Current vs. Temperature

4
4.0
TA = +25°C V DD = 18V

3.5
IQUIESCENT (mA)
IQUIESCENT (mA)

BOTH INPUTS = 1

1 3.0
BOTH INPUTS = 1
5
2.5
BOTH INPUTS = 0

0.1 2.0
4 6 8 10
VDD
12 14 16 18 –55 –35 –15 5 25 45
TA (°C)
65 85 105 125
6
High-State Output Resistance Low-State Output Resistance
25 25

20 20
WORST CASE @ TJ = +150°C WORST CASE @ TJ = +150°C

7
RDS(ON) (Ω)

RDS(ON) (Ω)

15 15

TYP @ TA = +25°C TYP @ TA = +25°C

10 10

8 8

8
5 5
4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18
VDD VDD

TELCOM SEMICONDUCTOR, INC. 4-249

 1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428

SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)

Supply Current vs. Capacitive Load Supply Current vs. Frequency
60 60
2 MHz 1000 pF
VDD = 18V VDD = 18V
50 50 2200 pF
900 kHz
ISUPPLY (mA)

ISUPPLY (mA)
40 40
100 pF
30 600 kHz 30

20 20

10 200 kHz 10

20 kHz
0 0
100 1000 10,000 10 100 1000
CLOAD (pF) FREQUENCY (kHz)

Supply Current vs. Capacitive Load Supply Current vs. Frequency

60 60
2200 pF
VDD = 12V 2 MHz VDD = 12V
50 50

40 40
ISUPPLY (mA)

ISUPPLY (mA)

1000 pF

30 30
900 kHz
20 20 100 pF
600 kHz

10 10
200 kHz
20 kHz
0 0
100 1000 10,000 10 100 1000
CLOAD (pF) FREQUENCY (kHz)

Supply Current vs. Capacitive Load Supply Current vs. Frequency

60 60
VDD = 6V VDD = 6V
50 50
ISUPPLY (mA)

ISUPPLY (mA)

40 40

30 30 2200 pF
2 MHz

20 20 1000 pF

900 kHz
10 600 kHz 10 100 pF
200 kHz
20 kHz
0 0
100 1000 10,000 10 100 1000
CLOAD (pF) FREQUENCY (kHz)

4-250 TELCOM SEMICONDUCTOR, INC.