1) Conducto conductess “have high ‘ cAveeiholt “esilthentvity due to free Electyons. NO foobidden gap as valence » band &@nduction. band: az Se ae bard is compictely Htled and conduction band : i aan “empty ..e-g- Siwen, iwon, copped, tin, ist, . ;Tmezcuay etc: |) Conductio 5 Bard AAI “Eneeay- OVesIapping Of1CB-8V-B. Naence Band| , @ Tnsulatoss:- pe tae L Eaxbidden_Baind gap_ is pg. Bev. Due -to mide | ——_|band_gap_lasge_amoun-t_of_enesqy iS _mecuiact — i +o me meve tightly bound Valence etectsons. | ——4t_0°k no _ tree €1e ehsons 012 aNatiler oie fox __ i icat_Conduction_ Lf -+emperorteme is increased | fEW)_Nalente ele sans can _Cxoss_the forbiddeh —_ |. gap_and_entess_in_condction bane. ——___ ee es ee Henle Hae enec cinco. Of in sulci idecxeases with incecasing -tempescrcize. 1-2. insulin € S_has__negative temp. cCoe-rticient of resistance — eee: conduction Band empty Ess sev Natence Band completely Oo Fapertetey Semiconductors >= Aired ~~ Semiconductors have smauu “forrbidde gap. Of the orders Of tev. They are Solids either pop= © 5 i : temp. 16 incxesed eleCianns can caoss the —___ Pe K i eg gesmanium [ £3=oF2ey ‘and _Si icon (E5= s1zev conduction: Band... A! mest empty ah Eg. ovdes. of tev Natence Band §-' Aimest fitted | =a a © Serna OKO Seamer O scamed wit oxen SamFesmi enesgy level Ep At T=0K It. is. chavacezistic enesgy tevel. at T=OK in condactos, below which all. enesgy levels ase compietety filled and above which all Enesay levelS ave completely empty. on ye aes The enesqy of highest occupied level at T=0K is caned as fesmmi enevgy tevel Ep Fermi Dizac distsibution function. The poobabirity of occupancy oF given enesgy level iS..given by . feommi. functiosy Oo Fesmi Disac distribation function-- ql 5 | Mle iesi {-feCE“Fe) /kr .. FLED gives. poobapitity .of erectzons occupdo ty in enesjy ievel. E at T=OK-.. : S .[Link])-= i fe Given: enesgy level Ep —" Fesmi enesgy level . K-=,Bortz mans constant TH temperature in Kelvin © Serna ith OKO Scare O scamed wit oxen SamFesmi level in_conductoy let us consider fexnmni function ee i4eCE-E)/qT ASe = = At T= 0K +theze aze -therse possibilities as Follows DEL Er f$ey= tS tt re +46 by electsons. ip SES Ee. Sa FE) = = =o ad i —— = All _enesgy levels above fexmi level aze vacant: ii) E= Ee AS_tempencrivme inoseases ep. -thexmat energy FOR EDUCATIONAL USE © Serna OKO Seamer O scamed wit oxen Samexcite erectsons. Erectwons Adjacent to fesmi \evet_ and having enesgy of the oxsder Of KT WIL absovb. this enexgy..and jump: into conduction. band: AS @.vesuit few levels below Ep within the wange of KT will get depteted ¥ few above Eg Of the over of KT get paotiatry fiated - T>o0K and E= Ge ane : eh ; #(E) = —__— = * ca teCE Ep) ser Teac CE) = 507. i ® The paobabiiity function plotted fos diffexent _ tempesatuecs is shown in rg. Tg>Te7T os See Sie 4 | e! ave theamaty excited. Equal poobabitity 9 of having electson Above dnd equal no.’ of hols below Fear ever FOF intinsic, Semidnrductus Feommi eneogy VieS Midway the Yatence bard and conduction band . Ba |Eoasnyil fee If Took fosition-of [Link]¢ Semiconductss:- Show thet fermi lever lies Midway. in between Natence band and conduction. Kend- in .tase of Wieinsic - Semiconductor. Pe © Serna ith OKO Scare O scamed wit oxen Sam@ Let_us__consides_inmizinsic_Semicanductas. Tt has L€qual no-of e1ecisons_and holes. | —At_any -ternpesatuase T° Ket eae ee amen) |—,--=_numbes_of _e€lectsions__in_-the_conductsn band. Ay—=—numbes_Of _electsons_in_+the vatere band aore_poobabitity -theosy uate oa veu U U pc) = Te ==) na _— —2) i PCE.) iS -the poobability Of electson having an eserqy Ec in the conductisn band . dissstbution functi ee PCE) = ep from C2) &§ c3) Simitlasty t CS are eee ee Ee CEES) Aq ihe N= totar mo-of e's in both bands N= De+Py a +N = pe EEO pe te CEvEA) pep FOR EDUCATIONAL USE © Serna OKO Seamer O scamed wit oxen SamCretEeeer) (\ elEv POT) 1g, re rhe eo (Ect PEM er =! Ec tEy~26p =o KT Er = EetEy Qe Thus feomi level 1ieS middie of -fosbidden gap in Intsinsic semi conductas | ® E, C-feomi tevel) Vatence_Band Position of fesmmi_teve\ in Exivinsic Semicondact@es Effect of tempesatue 6p fesmi in extoinsic Semiamde- CLS - ! > N-type Semiconductss - Tf we add pentavatert impurity +0 ‘Intsinsic semicariacto N-ty pe semitondiittes is formed - amet uemege CB. ee @SHOSOeCED-E, GG S-SOGE/F e-- eee a Tene ete ih ieee Ey w Ey Y.B. VB. VB. ig- Fig- =0°K Fig-c at THOK Fig-A g-B at T: a Sa S0K eA © Scanmed with OKEN Scanner O scamed wit oxen Sam@ }—Donare impunity is indiarted by positive sign aS —__ |_af-tees danating ciectoon i+ tsill become_posttive - _ Donox_Leve| Ey wit get added just betow-the cond — I_uctioh land. Fesrmi_tevel vies cet cemtse if it is | intsnsic_ semiconducica_as shown ia figuac—A AS Shown _in__figuze _B_at T=oK | feomi_levet_in_n type Sc_twitl_ be just cbave the —_ fined danas level fy __ Tf me increase hy Ar — r Conduction Bert = os ile aN ; eo Esin=eq a Vatence Barc FOR EDUCATIONAL USE © Serna OKO Seamer O scamed wit oxen Samthe valence band. L Fig-AJ At T=OK acceptox Level Had consists of holes Means emptyness hence feami tevel wilt (ie just betow the acceptor enevgy jevet Eq & above the Vatence bend Ey C Fig-8] eo Conduction Band Conduction Band Conduction Gant p oe Ffio- -- — — — ,—--~----Rin _—------- Spin = pgrs-8-3-6-9 FSSCSSS VY" Vatence Band Naience Band Vv Natence Band YD Fig-A Fig-B T=dk Fig-c T>ok At T >0°K electors in the yatence bard wil! be @ excited and holes iN +he acceptar level ave fied by this Poocess. Thus acceptee level get Filled and fesmi (evel Shifts Aboye acceptor jevel.[Fig—c] Thus in p-type Sc with in~@wesase In tempevartuxe the feomi level Shifts Upwaads Yaience Band = _¥atence Fond © Serna OKO Seamer OF scamed win oxen comerSC ffect of im conc. on P. Ue EO (Ow. level doping in case of P-type semianductos Single eneogy level Fy will get added as Shown in fig-a- TF we in@case irypuotty concertecttion fosther tH wSultS in fooming acceptor energy band just absve Fy, aS Shown in Fig-B This will Shift fesmi fever Still down words. With heavy doping Ep will be So Widden that it with move into valence Band. These will be Pastiat overlapping between Valence band & acceptary level Eq. Fevmi level wilt Shifts th Natence band. Feom Ca) to Fig Cc) with incearsing doping Eg goes 60 veslucing. conduction Band conduction Band conduction Band Ee Ise _| ‘| be v Nes Pee ee laience Band Vertence Band “Valence Band f—___||_ Effect_o-f impurity concen-tratlon_on_n= ic f pestis LéF OS conSides theca levels of cop: ing dane in case Of n=type semiconducter (ow, medium and high oS E pec | with tow doping donex energy evel “csingie) get PAG. gy ———Ladded_just below the conduction bandas Showy Lin figa). Tf we incwease the danay_cone: i-e. meciury ;-claping_is_cotin_intewacting dona tevet arms _bacd zeduce in fapiisden gap ~ ®_With heavy doping Fp. wit get_tmare hsiken -anct Mee Inte the Conductian band farther a ae ee Hand Er maves into conductian ha: = OVesiapping OF Ene Corekictian bard Conduction Band conduction Band Pel Ec LD. ZZZLIEL SS Sr === ® =? Ep Ep ie =D beet Eq le Ww —~ we Valence Band __yalenfe_B4nd__Vartence Band Se ee EEE Ee Ca) low level Cb) meciurn doping cc) heaxy doping doping FOR EDUCATIONAL USE © Serna OKO Seamer © scamed win oxen scaa “jp sethantes eel tins ate He iL P germicandssceres "_feemiitevel ties helowe..the condi= ction band. jee Leo Fes Shoup: in #ig—ca}— conductor Bard . ae es ee, — to nducion Bard 7 ; Fig -Ca) -@ ae =f 1 ae a a feo= = Yatence Band Ey ne + Netieoce, Band alm, See te epee Be I Depletion wegion __.Fig- b At_Zevo bigs es FOR EDUCATIONAL USE © Serna OKO Seamer O scamed wit oxen Sam: Fouward bias:- positive I —_ .*__Mhen.P—type is .connected:-to the: __ jtexminat OF the battery & n-type connected to negative teamical He ‘ncscases eleC4x0n and holes energy. Atl energy level - ShHtsS UPwWardS in Case of N-type | Shifts downwards in case of P-tppe..Hente Esn ¢ Epp gets sepevated by. amount ev. Ih foxwasd bias the potential bavsier decetases by amount V i-e- ECVg-V) - Depletion zegion goes-on reducing: . Net curwent fiowing +neough the junction “is due +o the diffusion of majoxity cazziexs ® "Mgiatyee 2 a te = Bard Vaterce Band — 4 Reverse bias !- When #-n junction is connected in wea bias eXteondi voltage is added +o, bawies voltage Vs. Fotentiar bawsier incucases by amount |C¥g+v)- Pepietion BeFIon goes ON incweasing. At tavges reverse bias the cuvgent due to [Link] zexo atel vesy negtigible cument of the ose of Namoampers Flow due to dUFt OF Minovity Cawviers. The wvevse braS reduces eneszy OF electsonsin e@nduction bare! pence all enesyy levels of N-type aac puried down. Atl enevgy levels 10 Prrglon Seige pert movedLp. de. 2 in -the- xtduee in en Erm t Erp oor cpapaued io ampuat ey Sa je = Basmles with inceeases. -Han e-ffect> TF a metat ow Semiconductsr cayeying Ceres Lin x divection and magnetic tietd perpandicutay “to it be. along z divection, A po » developed: pespandi cular: +o: bo wt Seng dizection: this Voltieige 1S ‘hownh es Hat Orage “this ent is. how as Hay E-fRec : | page semiasrdaLet us cons, ider_geg-tanguiny Curent Flowing cH acoug byt die +o _Apajied #leid is given by _TsPReAVy Ni = cloniet Vetoci-tey oleS. Pm Cancentmtion of holes ____ The cument density, y= == pevd is_deve topecl fae Ege The Sieectone 12% Lopent2 fore F& Halted Eq =~ —— +t F+ EF | ro. Fi Pal eee | Lil Bi 1 : ++ etter SS P—type n=type Sanpeia type anos suntace beoimas 2ve and viseversa. ja (py 5 jetcl_ Fy, na lanes _-the teneeat2 Boxee = Hau -fierd. . FOR EDUCATIONAL USE © Seanad ith OKO Scan © scamed win oxen sci= Fj, —) er = Bey , mill £ = By —C2) Bat E= Na we width of specimen Ww. Na. BYy Ww P ‘a = Nt» ¢3) ( BW e cormeent density due to holes 7 Lis Pevg = Nie Pe: Y=) yy = BIw { pe Ry= se —ra' coe fricient St is Harr fietd Janie carsent+ Pe density per unit Magnetic Rall voltage and. Cument+ induction. wlation ® - © Scares with OKEN Scanr © scamed win oxen sc@ Niet Hall Yoriage Te Hat|_cingle © The net eefic etectmic fied & in the semicandeuctor to, — the Z-axis. O,., — Hat angie *CANy = eas — a) Ex Ey=Ve — BIW = Boy (2) WwW nexw ne =RIx (as 526) SY ne an oy = = TBR, $ << cn tan @y = CBRy GRy=oty taney = tT ea (ul,6)} — ana) FOR EDUCATIONAL USE ed O Scanned with OKEN Scanner oApplications oF Hat effect () “To detesmIne type of Chavye Ccoszieas. Ry value is tye —-? type Ry Value is -Ve —D type 2) to determine Hal! voltage 3) Mobility ll 4) Carrier Concentsetton - 28 . conductiyrty, . ; : H ‘ et @ © Scanmed with OKEN Scanner © scamed win oxen sccbased_on bane gap LL Ty.pes__of Semicon. ductor —__Pineet_< Tn divect_Band_gap__sem iconducters —___ ——_|__Depending__on__band_gap_,Optical, 2tecraical ¢,__ cthemma,. ee aoc_governed . | Disect_band. Gap. Bart— “The Se eae loa a with tbe _hotes_of the _Yeuence_band 2esults tote the _aelease of ete tT aie di-tfemence 2.4. Gars, GanrsP, Tris, zns_etc. This property is _wifely used in_aptoetetimn=— indisect Band Gap sc ‘a Vhdisect band gap sc +he me combination of ' and hole wequisc lattice clefect Centazs_———_ eee gee ar pede eg is mefased tn _-the -foarm of hea 5st Re, Gap et: Ele mente Semicondiacioxs. ——}The _mos-+_cormmoniy _used XV _gyoup elements Silican £ Gexmaoiun oar cated! as_ctemental sc. ai - : Slaw ie © Serna OKO Seamer © scamed win oxen scCompo tind Semicandauctsas. Compound —Semigoaducteas_arc_fosimed by __ | Combining ete ments _-frron_+o_o%_maac_guoups ot _ | pewladic_tabie_Majoxity of then ore diacat hon — aor They cam_be —Cictss: ified_Indéatoce_gquexips | ee ee et Th AL) | Canpatind s_—= Thea As _______. a ee ear ln 0 9 © Serna OKO Seamer © seamed win oe——-Baaakdown__mechanisms When_a_. Setm conckacioe_dicd e is_-wevense_biaset 7 2ry—Smat..curre Oddie to._tminotity chawye carriers. Flow S_-Hozough__the junction Le -the meverse yotage _ JS_in teased. GPAMUALY, UIC WAC at perticatar Na\ue_ of aeyesse Naltay, i eee TT I] 25 piclly—‘THhoug the Voltage Namatian. negtigibiy Sma This effect eee LIN -@—jSNalanche_—ow_Zenes effecre. i Zemes effect i Ack . Knock_otutt els fram coVatent bonds. The etectaans becomes fete _ant crates hole bepipd- Esmee elactsons. stakes gaz in conduction Cuseent conduction _ineeaes. This_et-fect_in_which etectaons ar ejected out of covalent bonds by lawye e1ectm’c fied iS Knoen_ Las Zener effect - © Serna OKO Seamer O scamed wit oxen Sam@ | Zenes- diode - _Zeneyx_dicdeiS_speciat puxpose cicte— wemkS_j.M_beerkdowen weg i tS Always Connected; oo biased_- roa Zeneo- Aiete Shae Eames @: { oa ea i_ diode. In sevesse bias it works ip the beeadawn ronsdans- for _laxge vaiations of _cument_thanugh He Tt is heavily doped -to educe the beard ate Voltage So the width of the clepietian segion is —— Sai. Hence electric fied within the depietran is HHxOng AS %ye_incscases—nenzeYe,—rarcinntane bond s— are__booken Suddenly hence _Maximam—Tp floms ast — Q@tmost Constant Yerwe of Ve Appiications’ = la) AG voltage weg tilatesey fixed Novtage acfesence fos—knising & Compasisos OS _ pick — Ci pppe ws ld) as peter: pombe ebb 9 $A © Serna OKO Seamer © scamed win oxen scRegiigibiy Sma fox ‘a Shasp—incyease_in the ~__ Cosmet inthe | brea telown megion._Hence a _Zzenes_ dicde Con be used aS a vattnge qequtatee- dx +0 __pwovide Constant Voltage from Vam‘abie coxsesponding Cumacnt 1S TT, As the. toad Cursse. nd ox _Suppiy Voltage changes, the _dltede_curseent- : * } fol tage __ Consta ry}. The excesS__ Voltage appeans acess T= ITz+t, jes VaV5 appapes aces s— RO[ LEDC tight Emitti nq_diode i Ci eer Undes_apprapxate found _bicsing—res— ale pon junction emis tight in the sange cf —___ with the haleS inthe P= segion —wheb_an_clecisop— ith, the hoe, qoes-toom higher energy 2tate +o lower enengy State_ie.-from _condectian— bard +0 _yeyente lard. Thee _di-tbenerce—lia—energs 5 aut ihn the -fersho_of Ge & i dicdes_arimst_entirc energy 1S— Gan up in the_fam_of-hentan_in_ GaAs enemy d ieemente 1S _given.out—in the fomn_Of [iy ft ———— i = gap enengyEg =hy =he A AS tho zoe ees fos Gap Ey =2-25eY, N= SSI? __it emis gecen Light Gars gives wed tight © Serna OKO Seamer OF scamed win oxen comer