Transistor
2SA1534, 2SA1534A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Unit: mm
Complementary to 2SC3940 and 2SC3940A
5.0±0.2 4.0±0.2
■ Features
8.0±0.2
● Complementary pair with 2SC3940 and 2SC3940A.
0.7±0.2
● Allowing supply with the radial taping and automatic insertion
possible.
■ Absolute Maximum Ratings (Ta=25˚C) 0.7±0.1
13.5±0.5
Parameter Symbol Ratings Unit
Collector to 2SA1534 –30
VCBO V
base voltage 2SA1534A –60 +0.15 +0.15
0.45 –0.1 0.45 –0.1
Collector to 2SA1534 –25
VCEO V 1.27 1.27
2.3±0.2
emitter voltage 2SA1534A –50
Emitter to base voltage VEBO –5 V
Peak collector current ICP –1.5 A 1 2 3 1:Emitter
2:Collector
2.54±0.15
Collector current IC –1 A 3:Base
TO–92NL Package
Collector power dissipation PC 1 W
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 ~ +150 ˚C
■ Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = –20V, IE = 0 – 0.1 µA
Collector to base 2SA1534 –30
VCBO IC = –10µA, IE = 0 V
voltage 2SA1534A –60
Collector to emitter 2SA1534 –25
VCEO IC = –2mA, IB = 0 V
voltage 2SA1534A –50
Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V
hFE1* VCE = –10V, IC = –500mA 85 340
Forward current transfer ratio
hFE2 VCE = –5V, IC = –1A 50
Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA – 0.2 – 0.4 V
Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA – 0.85 –1.2 V
Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 MHz
Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 30 pF
*h Rank classification
FE1
Rank Q R S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340
1
Transistor 2SA1534, 2SA1534A
PC — Ta IC — VCE IC — IB
1.2 –1.5 –1.2
Ta=25˚C VCE=–10V
Collector power dissipation PC (W)
Ta=25˚C
1.0 –1.25 IB=–10mA –1.0
Collector current IC (A)
Collector current IC (A)
–9mA
–8mA
0.8 –1.0 – 0.8
–7mA
–6mA
0.6 – 0.75 –5mA – 0.6
–4mA
0.4 – 0.5 –3mA – 0.4
–2mA
0.2 – 0.25 – 0.2
–1mA
0 0 0
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10 –12
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA)
VCE(sat) — IC VBE(sat) — IC hFE — IC
–100 –100 –600
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 IC/IB=10
Base to emitter saturation voltage VBE(sat) (V)
VCE=–10V
Forward current transfer ratio hFE
–30 –30
–500
–10 –10
–400
–3 –3
Ta=75˚C
Ta=–25˚C 25˚C
–1 –1 –300
Ta=75˚C 75˚C
25˚C
– 0.3 25˚C – 0.3
–200
–25˚C
– 0.1 –25˚C – 0.1
–100
– 0.03 – 0.03
– 0.01 – 0.01 0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A) Collector current IC (A) Collector current IC (A)
fT — IE Cob — VCB VCER — RBE
200 50 –120
VCB=–10V
IE=0 IC=–10mA
Collector output capacitance Cob (pF)
Ta=25˚C
Collector to emitter voltage VCER (V)
180 45 f=1MHz Ta=25˚C
Ta=25˚C
Transition frequency fT (MHz)
–100
160 40
140 35
–80
120 30
100 25 –60
2SA1534A
80 20
–40
60 15
2SA1534
40 10
–20
20 5
0 0 0
1 3 10 30 100 –1 –3 –10 –30 –100 0.1 0.3 1 3 10 30 100
Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ)
2
Transistor 2SA1534, 2SA1534A
ICEO — Ta Area of safe operation (ASO)
104 –10
VCE=–10V Single pulse
Ta=25˚C
–3
ICP
t=10ms
Collector current IC (A)
103 –1
IC
ICEO (Ta=25˚C)
– 0.3
ICEO (Ta)
t=1s
102 – 0.1
– 0.03
2SA1534A
10 – 0.01
2SA1534
– 0.003
1 – 0.001
0 20 40 60 80 100 120 140 160 – 0.1 – 0.3 –1 –3 –10 –30 –100
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V)