Assignment: Semiconductor Physics and
Devices
Numerical Questions and Solutions (10 per Unit)
UNIT I: Semiconductor Concepts and Carrier Trans-
port
1. Question: Calculate the resistivity of intrinsic Silicon at 300 K. Given ni = 1.5 ×
1010 cm−3 , µn = 1350 cm2 /V · s, µp = 480 cm2 /V · s, q = 1.6 × 10−19 C.
Solution:
σi = qni (µn + µp )
σi = (1.6 × 10−19 )(1.5 × 1010 )(1350 + 480) = 4.39 × 10−6 S/cm
1
ρi = = 2.28 × 105 Ω · cm
σi
2. Question: A Silicon sample is doped with 1017 Phosphorus atoms/cm3 . Calculate
the equilibrium hole concentration p0 .
Solution: Using Mass Action Law n0 p0 = n2i and n0 ≈ Nd .
n2i (1.5 × 1010 )2
p0 = = 17
= 2.25 × 103 holes/cm3
Nd 10
3. Question: Determine the Fermi level position relative to intrinsic level Ei for the
sample in Q2 (Nd = 1017 ).
Solution:
1017
Nd
EF − Ei = kB T ln = 0.0259 ln ≈ 0.407 eV
ni 1.5 × 1010
4. Question: Calculate drift velocity of holes in a Si bar (L = 100 µm) with 2V
applied. (µp = 480).
Solution:
V 2
E= = = 200 V/cm
L 100 × 10−4
vd = µp E = 480 × 200 = 9.6 × 104 cm/s
5. Question: Find the diffusion coefficient Dp if µp = 480 cm2 /V · s at 300 K.
Solution: Using Einstein Relation:
Dp = µp VT = 480 × 0.026 = 12.48 cm2 /s
1
6. Question: A semiconductor has an electron gradient of 1018 cm−4 . Calculate dif-
fusion current density (Dn = 35).
Solution:
dn
Jdif f = qDn = (1.6 × 10−19 )(35)(1018 ) = 5.6 A/cm2
dx
7. Question: Calculate Hall Voltage (VH ) for t = 100 µm, I = 1mA, B = 0.1T,
RH = 100 cm3 /C.
Solution: (Converting to consistent units: t = 10−2 cm, B = 10−5 Wb/cm2 is
messy, easier in SI).
RH IB 10−4 · 10−3 · 0.1
VH = = = 10−4 V = 0.1 mV
t 10−4
8. Question: If Si bandgap is 1.12 eV, what is the maximum wavelength of light to
generate an e-h pair?
Solution:
1.24 1.24
λmax = = = 1.107 µm
Eg 1.12
9. Question: Calculate the number of Silicon atoms per cubic centimeter (ρ = 2.33,
M = 28.09).
Solution:
ρNA 2.33 × 6.02 × 1023
N= = ≈ 5 × 1022 cm−3
M 28.09
10. Question: Sample has Nd = 1016 and Na = 5 × 1015 . Find majority carrier
concentration.
Solution: Nd > Na (n-type).
n0 ≈ Nd − Na = 1016 − 0.5 × 1016 = 5 × 1015 cm−3
UNIT II: PN Junctions
11. Question: Calculate Built-in Potential (Vbi ) for Si PN junction (Na = 1017 , Nd =
1016 ) at 300K.
Solution:
1033
Na Nd
Vbi = VT ln = 0.026 ln ≈ 0.754 V
n2i 2.25 × 1020
12. Question: Find depletion width (W ) for Q11 at zero bias.
Solution: (Na ≫ Nd , approximation)
s s
2ϵs Vbi 2(1.04 × 10−12 )(0.754)
W ≈ = ≈ 0.31 µm
qNd (1.6 × 10−19 )(1016 )
13. Question: Calculate junction capacitance (Cj0 ) for Area A = 10−4 cm2 (using
W = 0.31µm).
Solution:
ϵs A 1.04 × 10−12 · 10−4
Cj0 = = = 3.35 pF
W 0.31 × 10−4
2
14. Question: Calculate new capacitance if reverse bias VR = 5V.
Solution:
Cj0 3.35
Cj (5V ) = p =p ≈ 1.21 pF
1 + VR /Vbi 1 + 5/0.754
15. Question: Diode has I0 = 10 nA. Find current at 0.6V forward bias.
Solution:
I = I0 eV /VT = 10−8 e0.6/0.026 = 10−8 (1.04 × 1010 ) ≈ 104 A
(Note: Ideally I0 for Si is pA range, giving mA current. Large I0 yields large
current).
16. Question: Find dynamic resistance (rd ) at forward current 2.6 mA.
Solution:
VT 26 mV
rd = = = 10 Ω
I 2.6 mA
17. Question: Calculate minority carrier diffusion length Ln if Dn = 25 and τn = 1µs.
Solution: p √
Ln = Dn τn = 25 × 10−6 = 5 × 10−3 cm = 50 µm
18. Question: A Zener diode breaks at 5.6V. If doping increases, does breakdown volt-
age rise or fall?
Solution: Falls. Higher doping → thinner width → higher field → earlier break-
down.
19. Question: Calculate max electric field (Emax ) in junction of Q12.
Solution:
2Vbi 1.508
Emax = = ≈ 4.86 × 104 V/cm
W 0.31 × 10−4
20. Question: Calculate voltage increase required to double forward current.
Solution:
∆V = VT ln(2) = 0.026 × 0.693 ≈ 18 mV
UNIT III: Transistors (BJT/FET) & LEDs
21. Question: Transistor has β = 150, IB = 20µA. Calculate IC and IE .
Solution:
IC = 150 × 20µA = 3 mA; IE = 3 + 0.02 = 3.02 mA
22. Question: Calculate α if β = 150.
Solution:
β 150
α= = ≈ 0.993
β+1 151
23. Question: JFET has IDSS = 8 mA, VP = −4 V. Find ID at VGS = −1 V.
Solution: 2
VGS
ID = IDSS 1 − = 8(1 − 0.25)2 = 4.5 mA
VP
3
24. Question: Calculate transconductance (gm ) for Q23 at VGS = −1V.
Solution:
2IDSS VGS 16
gm = 1− = (0.75) = 3 mS
|VP | VP 4
25. Question: MOSFET: Vth = 2 V, k = 0.5 mA/V2 . Find ID at VGS = 4 V (Sat).
Solution:
ID = 0.5k(VGS − Vth )2 = 0.5(0.5)(2)2 = 1 mA
26. Question: Find ID for Q25 in Linear Region if VDS = 1V.
Solution:
2
VDS
ID = k[(VGS − Vth )VDS − ] = 0.5[2(1) − 0.5] = 0.75 mA
2
27. Question: Calculate wavelength of GaAs LED (Eg = 1.42 eV).
Solution:
1240
λ= ≈ 873 nm
1.42
28. Question: LED current 20 mA, drop 2V. Calculate input power.
Solution: P = 2 × 20 = 40 mW.
29. article graphicx
Semiconductor assignment Lakshyaraj Singh February 2026
1 Introduction