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Lab 01CSE251

The lab report from East West University focuses on the I-V characteristics and modeling of forward conduction in a p-n junction diode. The objectives include measuring the I-V characteristics and determining the diode's models, with experimental data collected and analyzed. Key findings include the calculation of diode parameters Is and n, as well as the diode resistance rd based on the experimental results.

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0% found this document useful (0 votes)
8 views8 pages

Lab 01CSE251

The lab report from East West University focuses on the I-V characteristics and modeling of forward conduction in a p-n junction diode. The objectives include measuring the I-V characteristics and determining the diode's models, with experimental data collected and analyzed. Key findings include the calculation of diode parameters Is and n, as well as the diode resistance rd based on the experimental results.

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F U A D
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

East West University

Lab Report
Semester: Spring-2025

Course Title: Electronic Circuits Course Code: CSE251

Sec: 04
Expt No: 01

Expt Name: 𝐼 − 𝑉 Characteristics and Modeling of Forward Conduction of a Diode.

Group No: 05

Group Members:

Student Name Student Id


Md Al Fahim Fuyad 2023-1-60-066
[Link] 2023-1-60-023
Rubayat Nowshin Tajkiah 2023-3-50-028
Toyabur Rhaman 2023-1-60-065
Submitted by-
Name: Md Al Fahim Fuyad
Id: 2023-1-60-066

Submitted to-
Dr. Sarwar Jahan
Associate Professor
Department of Computer Science & Engineering
East West University
Date of Performance: 24-03-2025

Date of Submission: 3-03-2025


1. Title: 𝐼 − 𝑉 Characteristics and Modeling of Forward Conduction of a Diode.

2. Objectives:
• To measure the 𝐼 − 𝑉 characteristics of forward conduction of a p-n junction diode.
• To determine the models of forward conduction of a p-n junction diode.

3. Theory (Summary)/Introduction: A diode is one of the most fundamental non-


linear electronic devices. An ideal diode acts like a switch for electric current, behaving
as a short circuit in one direction (forward bias) and an open circuit in the opposite
direction (reverse bias). However, practical diodes exhibit characteristics that differ from
ideal behavior. Among various types of diodes, the p-n junction diode is widely used in
the industry. In this experiment, the forward bias current-voltage (𝐼 − 𝑉) characteristics
of a p-n junction diode will be measured.

4. Circuit Diagram:

Circuit setup to measure forward bias 𝐼 − 𝑉 characteristics of a diode.

• The circuit consists of a DC power supply, a resistor (1𝐾𝛺), and a p-n junction diode
connected in series.
• The voltage across the diode (𝑉𝐷 ) and the resistor (𝑉𝑅 ) is measured using a digital
multimeter.
• The diode current ( 𝐼𝐷 ) is calculated using Ohm’s law: 𝐼𝐷 = 𝑅𝐷 / 𝑅.
Experiment Datasheet:

Number 𝑉𝑠 (v) 𝑉𝐷 (v) 𝑉𝑅 (v) 𝐼𝐷 (mA) 𝑅(KΩ)


1. 0.5 0.375 0.0192 0.0196
2. 1 0.4821 0.4539 0.4636
3. 1.5 0.5125 0.8913 0.910
4. 2 0.5366 1.4313 1.46
5. 2.5 0.5535 1.898 1.938
6. 3 0.5664 2.337 2.38
7. 3.5 0.5814 2.906 2.968
8. 4 0.5911 3.347 3.41
9. 4.5 0.6012 3.833 3.91
10. 5 0.6111 4.321 4.41
11. 5.5 0.6193 4.799 4.90
12. 6 0.6274 5.327 5.44
13. 6.5 0.6349 5.791 5.91
14. 7 0.6441 6.302 6.43
15. 7.5 0.6483 6.811 6.955
0.979
16. 8 0.6552 7.315 7.47
KΩ
17. 8.5 0.6594 7.775 7.94
18. 9 0.6665 8.356 8.53
19. 9.5 0.6719 8.760 8.94
20. 10 0.6773 9.314 9.51
21. 10.5 0.6814 9.787 9.99
22. 11 0.6874 10.363 10.58
23. 11.5 0.6912 10.795 11.02
24. 12 0.6957 11.320 11.56
25. 12.5 0.7000 11.844 12.09
26. 13 0.7025 12.282 12.54
27. 13.5 0.7075 12.860 13.13
28. 14 0.7112 13.296 13.58
29. 14.5 0.7145 13.798 14.09
30. 15 0.7164 14.336 14.64
31. 15.5 0.7194 14.820 15.13
32. 16 0.7225 15.316 15.64
33. 16.5 0.7282 15.833 16.16
34. 17 0.7322 16.313 16.66
35. 17.5 0.7353 16.836 17.19
Post-Lab

2. Use pencil to identify the points on your graph that are corresponding to 𝐼𝐷 1 = 2 mA and
𝐼𝐷 2 = 2.5 mA. Use these data points to calculate the diode parameters 𝐼𝑠 and n from the
equation 𝐼𝐷 = 𝐼𝑠 𝑒𝑥𝑝 [ 𝑉𝐷 /𝑛𝑉𝑇]. 𝑈𝑠𝑒 𝑉𝑇 = 0.0259𝑉.

Answer:
𝑊ℎ𝑒𝑛, 𝐼𝐷 1 = 2𝑚𝐴 𝑡ℎ𝑒𝑛 𝑉𝐷 1 = 0.55 𝑉

𝐴𝑛𝑑 𝐼𝐷 2 = 2.5𝑚𝐴 𝑡ℎ𝑒𝑛 𝑉𝐷 2 = 0.56 𝑉

𝑁𝑜𝑤 𝑡𝑜 𝑓𝑖𝑛𝑑 𝑛 𝑤𝑒 𝑐𝑎𝑛 𝑢𝑠𝑒 𝑡ℎ𝑖𝑠 𝑒𝑞𝑢𝑎𝑡𝑖𝑜𝑛, 𝑉𝐷2 – 𝑉𝐷1 = 𝑛𝑉𝑇 𝑙𝑛(𝐼𝐷2 / 𝐼𝐷1)

=> 𝑛 = 𝑉𝐷 2 – 𝑉𝐷 1 /𝑉𝑇 𝑙𝑛( 𝐼𝐷 2 / 𝐼𝐷 1)

=> 𝑛 = (0.56 − 0.55) / 0.0259 𝑙𝑛(2.5 / 2)

=> 𝑛 = 1.73

𝐴𝑛𝑑, 𝐼𝐷 = 𝐼𝑠 𝑒 [ 𝑉𝐷 1/𝑛𝑉𝑇]

=> 𝐼𝑠 = 𝐼𝐷 / 𝑒 [ 𝑉𝐷 1/𝑛𝑉𝑇]

=> 𝐼𝑠 = 2 / 𝑒^ [0.55/1.73 × 0.0259]

=> 𝐼𝑠 = 0.0181 𝑚𝐴

3. 𝐷𝑒𝑡𝑒𝑟𝑚𝑖𝑛𝑒 𝑡ℎ𝑒 𝑐𝑢𝑡 −


𝑖𝑛 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑓𝑟𝑜𝑚 𝑡ℎ𝑒 𝑝𝑟𝑖𝑛𝑡𝑒𝑑 𝑔𝑟𝑎𝑝ℎ 𝑏𝑦 𝑑𝑟𝑎𝑤𝑖𝑛𝑔 𝑎𝑛 𝑒𝑥𝑡𝑟𝑎𝑝𝑜𝑙𝑎𝑡𝑒𝑑 𝑙𝑖𝑛𝑒 𝑤𝑖𝑡ℎ 𝑝𝑒𝑛𝑐𝑖𝑙.

𝑨𝒏𝒔𝒘𝒆𝒓: 𝐹𝑟𝑜𝑚 𝑡ℎ𝑒 𝑔𝑟𝑎𝑝ℎ, 𝑡ℎ𝑒 𝑐𝑢𝑡 − 𝑖𝑛 𝑜𝑟 𝑏𝑢𝑖𝑙𝑡 𝑖𝑛 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑖𝑠 𝑉𝐷 = 0.48𝑉

𝟒. 𝐼𝑓 𝑡ℎ𝑒 𝑑𝑖𝑜𝑑𝑒 𝑟𝑒𝑠𝑖𝑠𝑡𝑎𝑛𝑐𝑒 𝑓𝑜𝑟 𝑡ℎ𝑒 𝑝𝑖𝑒𝑐𝑒𝑤𝑖𝑠𝑒 𝑙𝑖𝑛𝑒𝑎𝑟 𝑚𝑜𝑑𝑒𝑙 𝑖𝑠 𝑑𝑒𝑓𝑖𝑛𝑒𝑑 𝑎𝑠 1


/ 𝑟𝐷 = 𝜕𝐼 𝐼𝐷 / 𝜕 𝑉𝐷
= ( 𝐼𝐷 2 − 𝐼𝐷 1) /( 𝑉𝐷 2
− 𝑉𝐷 1), 𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒 𝑡ℎ𝑒 𝑣𝑎𝑙𝑢𝑒 𝑜𝑓 𝑟𝐷 𝑓𝑟𝑜𝑚 𝑡ℎ𝑒 𝑑𝑎𝑡𝑎 𝑝𝑜𝑖𝑛𝑡𝑠 𝑐𝑜𝑟𝑟𝑒𝑠𝑝𝑜𝑛𝑑𝑖𝑛𝑔 𝑡𝑜 𝐼𝐷 1
= 2𝑚𝐴 𝑎𝑛𝑑 𝐼𝐷 1 = 2.5𝑚𝐴.

𝐻𝑒𝑟𝑒, 𝐼𝐷 1 = 2 𝑚𝐴 𝑤ℎ𝑒𝑛 𝑉𝐷 1 = 0.55 𝑉

𝐼𝐷2 = 2.5 𝑚𝐴 𝑤ℎ𝑒𝑛 𝑉𝐷2 = 0.56 𝑉

𝑊𝑒 𝑘𝑛𝑜𝑤, 1/ 𝑟𝐷 = ( 𝐼𝐷 2 − 𝐼𝐷 1) / ( 𝑉𝐷 2 − 𝑉𝐷 1)
=> 𝑟𝐷 = ( 𝑉𝐷 2 − 𝑉𝐷 1) / ( 𝐼𝐷 2 − 𝐼𝐷 1)

=> 𝑟𝐷 = (0.56 − 0.55) / (2.5 − 2)

=> 𝑟𝐷 = 0.02 𝐾Ω

𝑆𝑜, 𝑡ℎ𝑒 𝑣𝑎𝑙𝑢𝑒 𝑜𝑓 𝑟𝐷 = 0.02 𝐾Ω

[Link] the circuit of figure using PSpice:

Answer:
Figure: 𝐼𝐷 𝑉𝑠 𝑉𝐷

Figure: 𝑉𝐷 𝑉𝑠 𝑉𝑠

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