NTF6P02T3G, NVF6P02T3G

Power MOSFET
-10 Amps, -20 Volts
P−Channel SOT−223

Features [Link]
• Low RDS(on)
−10 AMPERES
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
−20 VOLTS
• Avalanche Energy Specified RDS(on) = 44 mW (Typ.)
• AEC Q101 Qualified and PPAP Capable − NVF6P02T3G S
• NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable G

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications
• Power Management in Portables and Battery−Powered Products, D
i.e.: Cellular and Cordless Telephones and PCMCIA Cards P−Channel MOSFET

MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
& PIN ASSIGNMENT
Rating Symbol Value Unit
Drain
4
Drain−to−Source Voltage VDSS −20 Vdc 4
1
Gate−to−Source Voltage VGS ±8.0 Vdc 2
3
AYW
Drain Current (Note 1) SOT−223 6P02G
− Continuous @ TA = 25°C ID −10 Adc
CASE 318E G
− Continuous @ TA = 70°C ID −8.4
− Single Pulse (tp = 10 ms) IDM −35 Apk STYLE 3
1 2 3
Total Power Dissipation @ TA = 25°C PD 8.3 W
Gate Drain Source
Operating and Storage Temperature Range TJ, Tstg −55 to °C
+150 A = Assembly Location
Y = Year
Single Pulse Drain−to−Source Avalanche EAS 150 mJ W = Work Week
Energy − Starting TJ = 25°C 6P02 = Specific Device Code
(VDD = −20 Vdc, VGS = −5.0 Vdc,
G = Pb−Free Package
IL(pk) = −10 A, L = 3.0 mH, RG = 25W)
(Note: Microdot may be in either location)
Thermal Resistance °C/W
− Junction to Lead (Note 1) RqJL 15
− Junction to Ambient (Note 2) RqJA 71.4
− Junction to Ambient (Note 3) RqJA 160 ORDERING INFORMATION
Maximum Lead Temperature for Soldering TL 260 °C Device Package Shipping†
Purposes, 1/8″ from case for 10 seconds
NTF6P02T3G SOT−223 4000 / Tape &
Stresses exceeding Maximum Ratings may damage the device. Maximum
(Pb−Free) Reel
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the NVF6P02T3G SOT−223 4000 / Tape &
Recommended Operating Conditions may affect device reliability. (Pb−Free) Reel
1. Steady State.
2. When surface mounted to an FR4 board using 1” pad size, †For information on tape and reel specifications,
(Cu. Area 1.127 sq in), Steady State. including part orientation and tape sizes, please
3. When surface mounted to an FR4 board using minimum recommended pad refer to our Tape and Reel Packaging Specifications
size, (Cu. Area 0.412 sq in), Steady State. Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

July, 2012 − Rev. 5 NTF6P02T3/D
 NTF6P02T3G, NVF6P02T3G

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4) V(BR)DSS Vdc
(VGS = 0 Vdc, ID = −250 mAdc) −20 −25 −
Temperature Coefficient (Positive) − −11 − mV/°C

Zero Gate Voltage Drain Current IDSS mAdc

(VDS = −20 Vdc, VGS = 0 Vdc) − − −1.0
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 125°C) − − −10
Gate−Body Leakage Current IGSS − − ± 100 nAdc
(VGS = ± 8.0 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4) VGS(th) Vdc
(VDS = VGS, ID = −250 mAdc) −0.4 −0.7 −1.0
Threshold Temperature Coefficient (Negative) − 2.6 − mV/°C

Static Drain−to−Source On−Resistance (Note 4) RDS(on) mW

(VGS = −4.5 Vdc, ID = −6.0 Adc) − 44 50
(VGS = −2.5 Vdc, ID = −4.0 Adc) − 57 70
(VGS = −2.5 Vdc, ID = −3.0 Adc) − 57 −

Forward Transconductance (Note 4) gfs − 12 − Mhos

(VDS = −10 Vdc, ID = −6.0 Adc)

DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = −16 Vdc, VGS = 0 V, Ciss − 900 1200 pF
f = 1.0 MHz)
Output Capacitance Coss − 350 500
Transfer Capacitance Crss − 90 150
Input Capacitance (VDS = −10 Vdc, VGS = 0 V, Ciss − 940 − pF
f = 1.0 MHz)
Output Capacitance Coss − 410 −
Transfer Capacitance Crss − 110 −

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time (VDD = −5.0 Vdc, ID = −1.0 Adc, td(on) − 7.0 12 ns
VGS = −4.5 Vdc,
Rise Time RG = 6.0 W) tr − 25 45
Turn−Off Delay Time td(off) − 75 125
Fall Time tf − 50 85
Turn−On Delay Time (VDD = −16 Vdc, ID = −6.0 Adc, td(on) − 8.0 − ns
VGS = −4.5 Vdc,
Rise Time RG = 2.5 W) tr − 30 −
Turn−Off Delay Time td(off) − 60 −
Fall Time tf − 60 −
Gate Charge (VDS = −16 Vdc, ID = −6.0 Adc, QT − 15 20 nC
VGS = −4.5 Vdc) (Note 4)
Qgs − 1.7 −
Qgd − 6.0 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = −3.0 Adc, VGS = 0 Vdc) (Note 4) VSD − −0.82 −1.2 Vdc
(IS = −2.1 Adc, VGS = 0 Vdc) − −0.74 −
(IS = −3.0 Adc, VGS = 0 Vdc, TJ = 125°C) − −0.68 −
Reverse Recovery Time (IS = −3.0 Adc, VGS = 0 Vdc, trr − 42 − ns
dIS/dt = 100 A/ms) (Note 4)
ta − 17 −
tb − 25 −
Reverse Recovery Stored Charge QRR − 0.036 − mC
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
5. Switching characteristics are independent of operating junction temperatures.

[Link]
2
 NTF6P02T3G, NVF6P02T3G

TYPICAL ELECTRICAL CHARACTERISTICS

12 12
−10 V −2.2 V TJ = 25°C
VDS ≥ −10 V
−7.0 V −2.0 V
−ID, DRAIN CURRENT (AMPS)

−ID, DRAIN CURRENT (AMPS)

10
−5.0 V
9
−2.4 V
−3.2 V 8
−1.8 V
−4.4 V
6 6

−1.6 V
4
3 TJ = −55°C
−1.4 V 2
VGS = −1.2 V TJ = 25°C
TJ = 100°C
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.2 0.08
TJ = 25°C
0.07
ID = −6.0 A
0.15 TJ = 25°C VGS = −2.5 V
0.06

0.1 0.05
VGS = −4.5 V
0.04
0.05
0.03

0 0.02
0 1 2 3 4 5 6 2 4 6 8 10 12 14
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current
Gate−to−Source Voltage and Gate Voltage

1.6 10,000
RDS(on), DRAIN−TO−SOURCE RESISTANCE

ID = −6.0 A VGS = 0 V
VGS = −4.5 V TJ = 150°C
1.4
−IDSS, LEAKAGE (nA)
(NORMALIZED)

1.2
1000
1.0

0.8 TJ = 100°C

0.6 100
−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

Temperature versus Voltage

[Link]
3
 NTF6P02T3G, NVF6P02T3G

TYPICAL ELECTRICAL CHARACTERISTICS

3000 5 20

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VDS = 0 V VGS = 0 V

−VGS, GATE−TO−SOURCE VOLTAGE (V)

QT
Ciss TJ = 25°C
−VDS
2400 4 16
C, CAPACITANCE (pF)

−VGS

1800 3 12
Crss
Qgs
Qgd
1200 Ciss 2 8

Coss ID = −6.0 A
600 1 4
TJ = 25°C
Crss
0 0 0
10 5 −VGS 0 −VDS 5 10 15 20 0 4 8 12 16
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE Qg, TOTAL GATE CHARGE (nC)
(VOLTS)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge

1000 7
VDD = −16 V
VGS = 0 V
−IS, SOURCE CURRENT (AMPS)

ID = −3.0 A 6
VGS = −4.5 V TJ = 25°C
td(off) 5
100
t, TIME (ns)

tf 4

tr 3
10
2
td(on)

1 0
1 10 100 0.3 0.6 0.9 1.2
RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus Current
versus Gate Resistance

[Link]
4
 NTF6P02T3G, NVF6P02T3G

TYPICAL ELECTRICAL CHARACTERISTICS

1
RTHJA(t), EFFECTIVE TRANSIENT

D = 0.5
THERMAL RESPONSE

0.2
0.1 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD)
0.1 0.05
0.0175 W 0.0710 W 0.2706 W 0.5779 W 0.7086 W
0.02 CHIP
JUNCTION 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
0.01
AMBIENT
SINGLE PULSE
0.01
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
t, TIME (s)

Figure 11. FET Thermal Response

[Link]
5
 NTF6P02T3G, NVF6P02T3G

PACKAGE DIMENSIONS

SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
b1 2. CONTROLLING DIMENSION: INCH.

MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
4 A 1.50 1.63 1.75 0.060 0.064 0.068
A1 0.02 0.06 0.10 0.001 0.002 0.004
HE E b 0.60 0.75 0.89 0.024 0.030 0.035
1 2 3 b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
b e 2.20 2.30 2.40 0.087 0.091 0.094
e1 0.85 0.94 1.05 0.033 0.037 0.041
e1 L 0.20 −−− −−− 0.008 −−− −−−
e L1 1.50 1.75 2.00 0.060 0.069 0.078
HE 6.70 7.00 7.30 0.264 0.276 0.287
C q 0° − 10° 0° − 10°
q
A STYLE 3:
PIN 1. GATE
0.08 (0003) 2. DRAIN
A1 L 3. SOURCE
L1 4. DRAIN

SOLDERING FOOTPRINT*
3.8
0.15

2.0
0.079

6.3
2.3 2.3
0.248
0.091 0.091

2.0
0.079

1.5 SCALE 6:1 ǒinches

mm Ǔ
0.059
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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[Link] NTF6P02T3/D
6