Electronic Devices & Circuit

ECE Batch : Hinglish

Subject : Electronics Device & Circuits Practice Sheet- 01

Chapter : Basics of SC Physics

[MCQ] [MCQ]
1. Thermal voltage VT depends on 5. Mobility depends on temperature as;
(a) Temperature non linearly. (a) µ  T–3/2 at low temperature ranges.
(b) Temperature linearly. (b) µ  T3/2 at high temperature ranges.
(c) Temperature inversely. (c) µ  T–3/2 at high temperature ranges.
(d) None of these. (d) µ  T at low temperature ranges.
[MCQ]
[MCQ] 6. Mobility µ depends on
2. Energy gap Eg in a semiconductor (a) Temperature as well as electric field intensity.
(a) Increases with increase in temperature. (b) Temperature but independent of electric field
(b) Decreases with increase in temperature. intensity.
(c) Does not depend on temperature. (c) Electric field intensity but independent of temp.
(d) Increases with decrease in temp. (d) None of these
[MCQ]
[MCQ] 7. Conductivity of semiconductor depends on
3. Energy gap Eg is (a) Only the mobility of charge carriers.
(a) Low in insulators and high in semiconductors. (b) concentration of charge carriers only.
(b) High in insulators as well as in semiconductors. (c) Product of concentration of charge carriers and
(c) Low in insulators as well as in semiconductors. mobility.

(d) Low in semiconductors and high in insulators. (d) Product of electric field intensity and
concentration of charge carriers.
[NAT]
[MCQ]
8. Variation of drift velocity with electric field is as
4. Mobility of charge carriers given below : →
(a) Increase with temperature at low temp ranges.
(b) Decrease with temperature at low temp ranges.
(c) Increase with temperature at high temp ranges.
(d) None of these.

Then at applied electric field of 105 V/cm, the

mobility of charge carriers will be
________ cm2/v/sec.
 2

[MCQ] [MCQ]
9. In a semiconductor, concentration of electrons 14. A Si sample is doped with arsenic and as a result
n = 1010/cm3 and intrinsic carrier concentration
ni = 1.5×1010/cm3 then concentration of holes is (a) We get holes in majority and electrons in
minority
(a) 1.5 × 1010/cm3
(b) We get equal concentration of electrons and
(b) 2.25 × 1010/cm3 holes
(c) can’t be determined as doping concentration is (c) We get electrons in majority and holes in
not given. minority
(d) 1010/cm3. (d) None of these
[MCQ]
[MCQ] 15. In a n-type semiconductor the concentration of
10. Intrinsic carriers concentration in a semiconductor– electrons and holes is [If doping concentration is ND]
A is (ni)A and in semiconductor–B is (ni)B. If energy (a) n = ND + po, p = po
gap (Eg)A > (Eg)B then
(b) n = ND, p = ND – ni
(a) (ni)A > (ni)B (b) (ni)B > (ni)A
(c) n = n0, p = ND + n0
(c) (ni)A = (ni)B (d) (ni)A = [(ni)B]2 (d) None of these

[MCQ] [MCQ]
11. In a semiconductor, concentration of minority 16. In a p-type semiconductor, which of the following is
carriers is not correct?
(a) Directly proportional to majority carriers (a) Holes are majority charge carriers and electrons
concentration are minority charge carriers
(b) Inversely proportional to intrinsic carrier (b) p > ni > n
concentration
(c) p > ni < n
(c) Inversely proportional to doping concentration
(d) conductivity is mainly due to holes.
(d) None of these

[MCQ]
[MCQ]
17. In an n-type semiconductor, for holes concentration
12. Conductivity of metals is very high because of 1
to be times electron concentration, holes
(a) Low concentration of charge carriers 4
(b) High concentration of charge carriers concentration will be:
ni ni
(c) High packing density of atoms (a) p0 = (b) p0 =
4 2
(d) None of these
ni
(c) p 0 = n i (d) p0 =
2
[MCQ]
13. In a pure – semiconductor, concentration of charge [MCQ]
carriers
18. In a p-type– semiconductor
(a) Increases with temperature non-linearly
 n  conductivity due to electrons e −s ,  p −
(b) Decreases with temperature linearly
conductivity due to holes.
(c) Do not change with change in temperature
1
(d) None of these (a)  n   p (b)  n =  p
2
(c)  n   p (d) n = p
 3

[MCQ] [MCQ]
19. A semiconductor is simultaneously doped with 23. Which of the following is true about doped
acceptor impurities with concentration NA and donor semiconductors?
impurities with concentration ND and with NA < ND (a) Minority carrier concentration is directly
then proportional to intrinsic carrier concentration.
(a) It is p-type semiconductor having (b) Minority carrier concentration is inversely
p 0 (N A − N D ) proportional to intrinsic carrier concentration.
(c) Minority carrier concentration is directly
(b) It is n-type semiconductor having n 0  N D proportional to doping concentration.
(d) None of these.
(c) It is p-type semiconductor having p 0 NA
(d) It is n-type semiconductor having [MCQ]
n0 (N D − N A )
24. In a p-type semiconductor concentration of holes and
electrons are p0 = 1015/cm3, n0 = 1010/cm3. We want
[MCQ] to change the concentration of electrons to 1011/cm3
20. Drift velocity of charge carriers at very high electric then we need to add
field gets saturated because: (a) Phosphorous with concentration ND = 1011/cm3
(a) Mobility becomes constant at high electric field. (b) Phosphorous with concentration ND = 9 × 1014
(b) Mobility is directly proportional to electric field
(c) As with concentration ND = 1014/cm3.
at high electric fields.
(c) Mobility is inversely proportional to electric (d) Boron with concentration ND = 1014/cm3.
field at high electric fields.
(d) None of these. [MCQ]
[MCQ] 25. In Si, donors are added to the extent ND = 1010/cm3.
21. In a pure Si, intrinsic carrier concentration is Intrinsic carrier concentration ni = 1.5 × 1010/cm3
ni = 1.5 × 1010/cm3, it is desired to have hole then which of the following is true?
concentration p0 = 1.5 × 1015/cm3 then required (a) It is p-type semiconductor with
doping will be
p0 = 2.25 × 1010/cm3
(a) Phosphorous with concentration
(b) It is n-type semiconductor with
NS = 1.5 × 1015/cm3
(b) Boron with concentration NS = 1.5 × 1010/cm3 n0 = 1010/cm3
(c) Al with concentration NS = 1.5 × 1015/cm3 (c) It is p-type semiconductor with
(d) As with concentration NS = 2.25 × 1015/cm3 p0 = 1.5 × 1010/cm3
(d) It is n-type semiconductor with
[MCQ]
n0 = 2.08 × 1010/cm3
22. In pure Ge, impurities are added such that hole
concertation is found to be p0 = 1.25 × 1010/cm3 and
electrons concentration is found to be [MCQ]
n0 = 5 × 1014/cm3 then which of the following is true? 26. A pure Ge is doped with Boron in the ratio 1:106 i.e.
(a) Intrinsic carrier concentration is 1 atom per 106 atoms of Ge, if density of Ge is
ni = 2.5 × 1012/cm3 4 × 1022/cm3 and intrinsic carrier concentration is
(b) Intrinsic carrier concentration is
ni = 2 × 1011/cm3 then
ni = 2.5 × 1013/cm3 and it is n-type
semiconductor. (a) Concentration of electrons is n0 = 106/cm3
(c) Intrinsic carrier concentration is (b) Concentration of holes is p0 = 106/cm3
ni = 1.25 × 1010/cm3 & it is p-type semiconductor
(c) Concentration of electrons is n0 =4 × 1016/cm3
(d) None of these
(d) None of these
 4

[MCQ] [MCQ]
27. A pure Si is doped with donor impurities 32. In a doped SC if we add pentavalent impurities then
ND = 1016/cm3. At room temperature T = 300 K, fermi level moves:
ni = 1.5 × 1010/cm3, concentration of electrons is n0 & (a) In upward direction always
concentration of holes is p0. Now temperature is (b) In downward direction always
increased to T1 and at T1, value of ni is ni = 3 × (c) Can’t be determine as SC is not known
1010/cm3. (Double of the initial value) then new (d) None of these
concentration of electrons & holes will be
(a) n0 = n0 & p0 = 2 p0 [NAT]
(b) n0 = 2n0 & p0 = 2 p0 33. Across a sample of n-type SC, electric field of E =
(c) n0 = n0 & p0 = 4 p0 104 V/cm is applied. Doping concentration ND = 1016
(d) n0 = 2n0 & p0 = 4 p0 /cm3 and saturation velocity of charge carrier is 107
cm/sec. Then the value of current density [kA/cm2]
[NAT] in SC is ____________. [Given µn = 1350 cm2/V-s]
28. A pure Si is converted into n-type semiconductor
with impurity doping concentration ND = 1015/cm3. If [MCQ]
intrinsic carrier concentration ni = 1.5 × 1010/cm3 & 34. In a SC fermi level lies above the mid of the band
n gap, then which of the following is true?
= 2.5 then the ration of conductivity of doped (a) It is n-type SC with f (EV + Eg / 2) > ½

(b) It is p-type SC with f (EV + Eg / 2) < ½
semiconductor to conductivity of pure (c) It is n-type SC with f (EV + Eg / 2) = ½
semiconductor is _____. (d) It is intrinsic SC with f (EV + Eg / 2) = ½

[MSQ] [MCQ]
35. In a doped-SC, following information is given
29. Minority carrier concentration in a doped EF – EFi = – 0.3 eV, then concentration of electrons
semiconductor will increase if and holes in the SC is:
(a) Operating temperature decreases Given: kT/q = 0.025 volt.
(b) Doping concentration increases (a) n = 1.63 × 105 ni , p = 6.14 × 10–6 ni
(b) n = 6.14 × 10–6 ni , p = 1.63 × 105 ni
(c) Doping concentration decreases
(c) n = ni , p = 12 ni
(d) Operating temperature increases (d) n = 12 ni , p = ni

[MCQ] [MCQ]
30. In presence of electric field: 36. Fermi level diagram of a SC is given as:
(a) Electrons and holes flow in opposite direction
and contribute current in opposite direction.
(b) Electrons and holes flow in same direction and
contribute current in same direction.
(c) Electrons and holes flow in opposite direction
and contribute current in same direction. Initial doping concentration is N1. Now it is doped
(d) None of these. with acceptor impurities of concentration N2 such
that new fermi level position is as given below :
[MCQ]
31. In a SC, probability of finding a hole at an energy
level E1 ( E1  EF ) will be
(a) 1/2
(b) < 1/2
Then the relation between N2 and N1 is
(c) > 1/2
(a) N1 = N2 (b) N2 > N1
(d) Can’t be determine as E1 is not known (c) N2 < N1 (d) N2 = 1.5 N1
 5

[MCQ] [NAT]
37. Fermi Dirac distribution function f (E) is plotted 40. Fermi level diagram of a doped-SC is as given below
against energy level E at different temperature as
Doping concentration is N1 in SC.
shown below :

To shift fermi level to EF’ which is 7/20 Eg eV above

Ei, impurity added is N2 cm-3. Then the ratio of N2 /
Then which of the following is true : N1 is _________.
(a) At point A, f (E) = ½, & at f ( E ) A1  f ( E ) A2
41. [MCQ]
(b) At point A, f (E) > ½, & A bar of Gallium Arsenide (GaAs) is doped with
f ( E ) A1  f ( E ) A2  1 / 2 silicon such that the Silicon atoms occupy Gallium
and Arsenic sites in the GaAs crystal. Which one of
(c) At point A, f (E) = ½, & the following statements is true?
f ( E ) A1 = f ( E ) A2  1 / 2 (a) Silicon atoms act as p-type dopants in Arsenic
sites and n-type dopants in Gallium sites.
(d) At point A, f (E) < ½, & (b) Silicon atoms act as n-type dopants in Arsenic
f ( E ) A1  f ( E ) A2  1 / 2 sites and p-type dopants in Gallium sites.
(c) Silicon atoms act as p-type dopants in Arsenic
as well as Gallium sites
[MCQ] (d) Silicon atoms act as n-type dopants in Arsenic
38. Fermi level diagram of doped SC is given below: as well as Gallium sites.

42. [MCQ]
In the figure, ln(i) is plotted as a function of 1/T,
where i is the intrinsic resistivity of silicon, T is the
temperature, and the plot is almost linear.

To change the position of fermi level to EF’ which

is 0.3 eV above valance band. The new dopant
concentration added will be
(a) Equal to initial dopant concentration The slope of the line can be used to estimate
(b) Double of initial dopant concentration (a) Band gap energy of silicon (Eg)
(c) Half of initial dopant concentration (b) Sum of electron and hole mobility in silicon
(d) Four times the initial dopant concentration (n + p)
[NAT] (c) Reciprocal of the sum of electron and hole
39. Fermi level diagram of a doped SC is given as : mobility in silicon
(d) Intrinsic carrier concentration of silicon (ni)

43. [NAT]
In an extrinsic semiconductor, the hole concentration
is given to be 1.5𝑛i where 𝑛i is the intrinsic carrier
concentration of 1 × 1010 cm−3. The ratio of electron
to hole mobility for equal hole and electron drift
The probability of finding a hole at energy level E1 current is given as __________ (rounded off to two
will be _________ [up to four decimal places] decimal places).
 6

44. [NAT] 48. [NAT]

A piece of silicon is doped uniformly with As shown, a uniformly doped silicon (Si) bar of
phosphorous with a doping concentration of length L = 0.1 μm with a donor concentration
1016/cm3. The expected value of mobility versus ND = 1016 cm−3 is illuminated as at x = 0 such that
doping concentration for silicon assuming full electron and hole pairs are generated at the rate of
dopant ionization is shown below. The charge of an
 x
electron is 1.6 × 10–19C. The conductivity (in S cm– G L = G L0 1 −  , 0  x  L
1  L
) of the silicon sample at 300 K is____.
Hole and Electron Mobility in Silicon at 300 K Where GL0 = 1017 cm−3 S −1. Hole lifetime is 10−4 s,
1400
electronic charge q = 1.6 × 10–19 C, hole diffusion
Mobility (cm , V , s )
–1

1200
Electron Hole coefficient Dp = 100 cm2/s and low-level injection
–1

1000 condition prevails. Assuming a linearly decaying

steady state excess hole concentration that goes to 0
2

800
600 at x = L, the magnitude of the diffusion current
400 density at x = L/2, in A/cm2, is _________
200
Light
16 –3
1.E+13 1.E+14 1.E+15 1.E+16 1.E+17 1.E+18 1.E+19 1.E+20 Si(ND=10 cm )
–3
Doping Concentration (cm )
x=0 L = 0.1 m
45. [NAT]
In a semiconductor device, the Fermi-energy level is 49. [MCQ]
0.35 eV above the valence band energy. The A thin P-type silicon sample is uniformly illuminated
effective density of states in the valence band at T = with light which generates excess carriers. The
300 K is 1 × 1019cm−3. The thermal equilibrium hole recombination rate is directly proportional to
concentration in silicon at 400 K is _________× (a) The minority carrier mobility
1013cm−3 (rounded off to two decimal places).
(b) The minority carrier recombination lifetime
Given kT at 300 K is 0.026 eV.
(c) The majority carrier concentration
46. [MCQ] (d) The excess minority carrier concentration
In a non-degenerate bulk semiconductor with 50. [MCQ]
electron density n = 1016 cm−3, the value of Ec − EFn The energy band diagram and the electron density
= 200 meV, where Ec and EFn denote the bottom of profile n(x) in a semiconductor are shown in the
 qx 
the conduction band energy and electron Fermi level
figures. Assume that n ( x ) = 1015 e  kT  cm −3 , with
 

energy, respectively. Assume thermal voltage as 26

meV and the intrinsic carrier concentration is 1010 α = 0.1 V/cm and x expressed in cm. Given
kT D kT
cm−3. For n = 0.5 × 1016 cm−3, the closest = 0.026V, D n = 36 cm 2s −1 and = . The
q  q
approximation of the value of (EC − EFn ), among the
electron current density (in A/cm2) at x = 0 is
given options, is _____
(a) 226 meV (b) 174 meV
(c) 218 meV (d) 182 meV

47. [MCQ]
A single crystal intrinsic semiconductor is at a
temperature of 300 K with effective density of states
for holes twice that of electrons. The thermal voltage (a) –4.4 × 10–2 (b) –2.2 × 10–2
(c) 0 (d) 2.2 × 10–2
is 26 mV. The intrinsic Fermi level is shifted from
mid-bandgap energy level by
51. [MCQ]
(a) 13.45 meV (b) 9.01 meV
(c) 26.90 meV (d) 18.02 meV
 7

The energy band diagram of a p-type semiconductor If EC is the lowest energy level of the conduction
bar of length L under equilibrium condition (i.e., the band, EV is the highest energy level of the valance
Fermi energy level EF is constant) is shown in the band and EF is the Fermi level, which one of the
figure. The valance band EV is a sloped since doping following represents the energy band diagram for the
is non-uniform along the bar. The difference biased
between the energy levels of the valence band at the N-type semiconductor?
two edges of the bar is Δ.
(a) (b)
If the charge of an electron is q, then the magnitude
of the electric field developed inside this
semiconductor bar is
P-type
(c) (d)
EF
EV
53. [NAT]

The figure below shows the doping distribution in a
𝑃-type semiconductor in log scale.
z=0 z=L
(a)  (b) 2
qL qL
 3 –3
1016
(c) (d) NA(cm )
2qL 2qL
1014
1 2
52. [MCQ]
An N-type semiconductor having uniform doping is Position (m)
biased as shown in the figure. The magnitude of the electric field (in kV/cm) in the
semiconductor due to non-uniform doping is____.


 8

Answer Key
1. (b) 28. (4.76 × 104)
2. (d) 29. (c, d)
3. (d) 30. (c)
4. (a) 31. (b)
5. (c) 32. (a)
6. (a) 33. (16 to 16)
7. (c) 34. (a)
8. (100) 35. (b)
9. (b) 36. (b)
10. (b) 37. (c)
11. (c) 38. (b)
12. (b) 39. (0.0470 to 0.0480)
13. (a) 40. (3.012-3.014)
14. (c) 41. (a)
15. (a) 42. (a)
16. (c) 43. (2.25 to 2.25)
17. (b) 44. (1.92 to 1.92)
18. (c) 45. (63.10 to 63.89)
19. (d) 46. (c)
20. (c) 47. (b)
21. (c) 48. (16 to 16)
22. (a) 49. (d)
23. (c) 50. (c)
24. (b) 51. (a)
25. (d) 52. (d)
26. (a) 53. (1.10 to 1.25)
27. (c)

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BASICS OF SC PHYSICS
Discussion
PN JUNCTION DIODE
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PN JUNCTION DIODE
PN JUNCTION DIODE
 1

ECE Batch : Hinglish

Subject : Electronics Device & Circuits Practice Sheet- 01

Chapter : PN Junction Diode

[MCQ] [MCQ]
1. In depletion region of the p-n junction diode: 5. Two diodes DA and DB are made up of two different
(a) There are no ions on either side of the junction. semiconductor materials. Material A has energy gap
(Eg)A greater than energy gap of material B (Eg)B at
(b) There are positive ions on p-side and negative
ions on n-side of the depletion region. room temperature.
(c) There are negative ions on p-side and positive If doping concentration on p-side and n-side of both
ions on n-side of the depletion region. the diodes is same then at room temperature:
(d) None of these (a) Built in potential of A > Built in potential of B.
(b) Built in potential of A < Built in potential of B.
[MCQ] (c) Built in potential of A = Built in potential of B.
2. In depletion region of p-n junction diode:
(d) None of these.
(a) Electric field is constant and non-zero.
(b) Electric field is maximum at junction.
[MCQ]
(c) Electric field is minimum at junction.
6. In an p-n junction diode when we increase the reverse
(d) None of these. bias voltage: [NA > ND in diode]
(a) Depletion region width increases by same
[MCQ] amount on both sides of junction.
3. In a p-n junction diode at equilibrium: (b) Depletion region width decreases by same
(a) Diffusion current flows from p to n. amount on both sides of junction.

(b) Drift current flows from p to n. (c) Depletion region width increases more on n-side
compare to p-side.
(c) Diffusion current and drift current flows in same
direction. (d) Depletion width increases more on p-side
compare to n-side
(d) None of these

[MCQ] [MCQ]
4. In p-n junction diode with NA > ND 7. If in a p-n junction diode, we increase the doping on
n-side and decrease the doping on p-side then in
Where NA is doping concentration on p-side and
Forward Bias mode:
ND is doping concentration on n-side.
(a) Depletion width penetrates more in p-region. (a) Diffusion current due to holes decreases and
diffusion current due to electrons increases.
(b) Depletion region width will be same on both
sides of junction. (b) Diffusion current due to holes increases and
diffusion current due to electrons decreases.
(c) Depletion region width penetrates more in n-
region. (c) Diffusion current due to electrons as well as due
to holes increases.
(d) Depletion region penetrates in p-region and no
penetration in n-region. (d) Diffusion current due to electrons as well as due
to holes decreases.
 2

[NAT] [MCQ]
8. In a p-n junction diode at equilibrium. 12. Variation of electric field inside depletion region of a
diode at equilibrium is given as:
Eip – Ein = 0.65 eV
where Eip → mid of the band gap in p-region
Ein → mid of the band gap in n-region
If depletion region width at equilibrium is 4m then
value of maximum electric field inside depletion
region [magnitude only] _______ kV/cm.

[MCQ] Then which of the following is incorrect

9. In p-n junction diode, drift current at equilibrium (a) n-side is uniformly doped which p-side is non-
flows due to
uniformly doped
(a) Minority carriers of p and n regions.
(b) Electric field inside depletion region is from left
(b) Majority carriers of p and n regions.
to right
(c) Due to both majority and minority carriers of p-n
region. (c) Total stored charge in w1-region is equal in

(d) Due to minority carriers of p-region only. magnitude to the total charge stored in w2-region

(d) Doping is non-uniform in p-region as well as in

[MCQ] n-region

10. P-N junction diode in Reverse Bias mode

(a) has a current which does not change with change [MCQ]
in Reverse Bias voltage 13. In a p-n junction diode we want to double the
(b) has a current which exponentially increases with depletion region width w.r.t. width at equilibrium then
change in Reverse Bias voltage.
we can
(c) has a current which linearly changes with change
in Reverse Bias voltage. (a) Apply R.B. Voltage Vr = 2V0
(d) None of these (b) Apply R.B. Voltage Vr = V0 & decreasing doping
by factor of 2 on p-side as well as on n-side.

[MCQ] (c) Apply R.B. Voltage Vr = 4 V0

11. Which of the following statement is true about a diode (d) Increasing doping concentration by a factor of 4.
at equilibrium?
(a) Diffusion and drift currents are zero and net
current is also zero. [NAT]
14. At no applied bias junction capacitance is found to be
(b) Drift and diffusion current flows in opposite
directions and net current flows is zero CD. At applied R.B. of Vr voltage depletion region
(c) Drift current flows due to majority carriers from capacitance is found to be CD = CD/2, then the ratio of
p to n direction VR/V0 is_____.
(d) Diffusion current flows due to minority carriers
from n to p direction.
 3

[NAT] [NAT]
15. A schematic of p-n junction diode is shown below:
19. In O.C. p-n junction diode, the band diagram is as
given below:

NA
Doping ratio = 2.
ND
When no bias is applied then the depletion region
width on n-side is found to be 0.4 m. When R.B. of
Vr voltage is applied then depletion region width on
n-side is increased by 0.1m then at applied Vr
voltage depletion region width on p-side will be
___m. Then the ratio of depletion region width on n-side xn
xn
[NAT] to depletion region width on p-side xp i.e. is__.
xp
16. A p-n junction diode is forward biased by voltage Vd.
At this voltage & with doping concentration NA & ND (rounded off to two decimal places)
on p-side & n-side, the concentration of holes at the
edge of depletion region on n-side is p1. When voltage
is increased to 2Vd and doping concentration are
doubled then the holes concentration at the edge of [MCQ]
p 20. With increase in doping concentration, the forward
depletion region on n-side is p2 then the ratio 2
p1
current of diode will:
3
is_____×10 . Given (Vd = 7.692 VT) (rounded off to
three decimal places) (a) Increase

[NAT] (b) Decrease

17. In a p-n junction diode, doping concentration on n- (c) Remains uncharged
side & p-side are given as:
(d) None of these
ND = 1014/cm3, NA = 2 × 1014/cm3,
Contact potential V0 = 0.6V
At applied R.B. voltage of Vr = 1.4 volt, the stored
charge per unit area on n-side of depletion region will 21. [MCQ]
be _____ nC/cm2. Consider the recombination process via bulk traps in
Given: a forward biased pn homo junction diode. The
0 = 8.85 × 10–14F/cm, r = 12
maximum recombination rate is U max . If the electron
q = 1.6 × 10–19 C.
and the hole capture cross-section are equal, which
[MCQ] one of the following is False?
18. Which of the following statement is incorrect? (a) With all other parameters unchanged, 𝑈𝑚𝑎𝑥
(a) Junction capacitance increases with increase in decreases if the intrinsic carrier density is
doping reduced.
(b) 𝑈𝑚𝑎𝑥 Occurs at the edges of the depletion
(b) Forward bias voltage decreases with increase in
temperature if constant current is maintained region in the device.
through it (c) 𝑈𝑚𝑎𝑥 Depends exponentially on the applied
bias.
(c) If we decrease doping on n-side then diffusion
current increases due to electrons. (d) With all other parameters unchanged, 𝑈𝑚𝑎𝑥
increases if the thermal velocity of the
(d) Electric field inside depletion region is always
carriers increases.
from n to p-region.
 4

22. [NAT] 24. [MCQ]

A silicon pn-junction is shown in the figure. The The electric field profile in the depletion region of a
−3
doping in the P-region is 5 10 cm 16
and doping in p-n junction in equilibrium is shown in the figure.
−3
the N-region is 10  10 cm . The parameters given
16 Which one of the following statements is NOT
are TRUE?

Built-in voltage ( bi ) = 0.8 V . Electron charge

( q ) = 1.6  10−19 C
Vaccum permittivity (  0 ) = 8.85  10−12 F / m

Relative permittivity of silicon (  Si ) = 12

(a) The left side of the junction n-type and the

right side is p-type

(b) Both the n-type and p-type depletion regions

are uniformly doped
The magnitude of reverse bias voltage that would
(c) The potential difference across the depletion
completely deplete one of the two regions (P or N)
region is 700 mV
prior to the other (rounded off to one decimal place)
is ____________V. (d) If the p-type region has a doping
15 −3
concentration of 10 cm , then the doping
concentration in the n-type region will be 1016
23. [MCQ] cm−3
Consider avalanche breakdown in a silicon p + n
junction. The n-region is uniformly doped with a
25. [NAT]
donor density N D . Assume that breakdown occurs
when the magnitude of the electric field at any point Consider an abrupt PN junction (at T = 300 K)

in the device becomes equal to the critical field Ecrit . shown in the figure. The depletion region width X n

Assume Ecrit to be independent of N D . If the built- on the N-side of the junction is 0.2 m and the

in voltage of the p + n junction is much smaller than permittivity of silicon ( si ) is1.044  10−12 F / cm.
At the junction, the approximate value of the peak
the breakdown voltage, VBR , The relationship
electric field (in kV/cm) is __________.
between VBR and N D is given by

(a) VBR  N D = constant

(b) N D  VBR = constant

(c) N D  VBR = constant

(d) N D / VBR = constant

 5

26. [MCQ] [GATE-2017 : 1M] 27. [MCQ]

+
An n − n Silicon device is fabricated with uniform Compared to a pn-junction with NA = ND = 1014/cm3,
and non-degenerated donor doping concentrations which one of the following statements is TRUE for
of ND1 = 1 × 1018 cm–3 and ND2 = 1 × 1015 cm–3 a pn-junction with NA = ND =1020/cm3?
corresponding to the n + and n regions respectively. (a) Reverse breakdown voltage is lower and
At the operational temperature T, assume complete depletion capacitance is lower
impurity ionization, kT / q = 25 mV, and intrinsic (b) Reverse breakdown voltage is higher and
depletion capacitance is lower
carrier concentration to be ni = 1  1010 cm −3 . What
(c) Reverse breakdown voltage is lower and
is the magnitude of the built-in potential of this depletion capacitance is higher
device? (d) Reverses breakdown voltage is higher and
(a) 0.748 V (b) 0.460 V depletion capacitance is higher
(c) 0.288 V (d) 0.173 V


 6

Answer Key
1. (c) 15. (0.25 to 0.25)
2. (b) 16. (1.092 to 1.099)
3. (a) 17. (8 to 9) [8.244]
4. (c) 18. (c)
5. (a) 19. (10 to 10.20) [10.05]
6. (c) 20. (b)
7. (a) 21. (b)
8. (3.25 kV/cm) 22. (8.1 to 8.4)
9. (a) 23. (c)
10. (a) 24. (c)
11. (b) 25. (30 to 32)
12. (d) 26. (d)
13. (b) 27. (c)
14. (3 to 3)

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 01
PN JUNCTION DIODE
DISCUSSION
01
BJT
 1

EC Batch : Hinglish

Subject : Electronics Device & Circuits Practice Sheet- 01

Chapter : BJT

[MCQ] [NAT]

1. In a Si-npn-BJT following voltages are given : 5. In a npn BJT operating in active region following data
is given:-
VB = 1.1V, VE = 0.45 V, Vc = 0.5 V, then this BJT is
operating in :- IEn → emitter current due to e s− = 1.2 mA

(a) Active region IC → Collector current = 1.14 mA

(b) Reverse active region IB → Base current = 0.12 mA
(c) Saturation region Then the value of IEp (emitter current due to holes) is
________ μA.
(d) Cut-off region

[MCQ]
[MCQ]
6. If transit time of charge carriers in base region
2. In a BJT which of the following is true?
increases then
(a) NE > NC > NB (b) NE = NB > NC (a) Current gains increase
(c) NE > NB > NC (d) NE < NC > NB (b) Current gains decreases
Where NE → emitter doping, NB-Base doping & (c) Current gain remains constant
NC is collector doping. (d) None of these

[NAT] [MCQ]
3. In a pnp BJT, base to emitter voltage VBE = – 0.7 Volt 7. In a BJT doping in base region as well width of base
& reverse saturation current of E-B junctions & C-B region [designing width] is decreased then
Junction are given as: (a) Currents IE & IC current gains α, β, γ decrease.
(I0)EB = 20μA, (I0)CB = 30μA (b) Currents IE & IC and current gains α, β, γ increase.
Then value of collector current IC is________pA if (c) Currents IE & IC increase while current gains
VBC = 0.3 V. decrease.
(d) Currents IE & IC decrease while current gains
[NAT] increase.
[MCQ]
4. Base transport factor of a pnp transistor is B = 0.975.
Value of emitter current due to holes and 𝑒𝑠− in active 8. BJT is used as switch in
region is given as: (a) Active & reverse active region

IEn = 0.12mA, IEp = 2.28 mA (b) Active & cutoff region

Then the value of current gain β is _________. (c) Active & saturation region
(d) Saturation & cut off region
 2

[MCQ] [MCQ]
9. A BJT and its biasing is given below: 13. Consider a BJT with current gain  = 150 and reverse
saturation current across CB junction is 2µA. Find the
value of current gain γ when reverse saturation current
changes to 5µA.
(a) 150 (b) 200
(c) 151 (d) None of the above

[MCQ]
14. A silicon npn bipolar transistor is uniformly doped
This BJT will be
and biased in the forward-active region. The neutral
(a) Either in active region or cutoff region base width is xB = 0.8mm. The transistor doping
(b) Either in active region or reverse active region concentration are NE = 5 × 1017 cm–3, NB = 1016 cm–3,
(c) Either in saturation or cutoff region NC = 1015 cm–3, ni = 1.5 × 1010 cm–3. Find the total
(d) Either active region or saturation region minority carrier e– conc., nB at edge of depletion
region across base side for VBE = 0.625V.
(a) 1.34 × 106 cm–3
[MCQ]
(b) 3.02 × 1010 cm–3
10. As temperature increases
(c) 6.8 × 1010 cm–3
(a) Collector current increase in general
(d) 6.8 × 1014 cm–3
(b) Collector current does not change
(c) Collector current decreases
[MCQ]
(d) None of these 15. The leakage current of a transistor are ICBO = 5 µA and
ICEO = 0.4 mA and IB = 30 µA
[MCQ] The value of  is
11. An npn transistor in forward-active mode of operation (a) 79 (b) 81
is biased at IC = 1 mA. The total emitter base junction (c) 80 (d) None of the above
capacitance is 12 pF and the base transit time is 250
psec. The diffusion and depletion capacitances of the [MCQ]
emitter base junction in pF are, respectively.
16. The collector current of BJT is iC = 2 mA if the output
(a) 1, 20 (b) 10, 2 resistance is greater than 10 kΩ. What is the value of
(c) 100, 25 (d) 50, 10 early voltage VA for the transistor?
(a) VA < 20 V (b) VA < 10 V
[MCQ] (c) VA > 10 V (d) VA > 20 V
12. A silicon bipolar transistor with a common emitter
current gain of  = 60 and the minimum open base [MCQ]
break down voltage (BVCE0) is to be 15 volts. The 17. For a BJT, IC = 5.2 mA, IB = 50 µA, and ICBO = 0.5
value of minimum open emitter junction break down µA.
voltage (BVCB0) is (Assume empirical constant n = 4). The value of  is
(a) 10.8 V (b) 19.3 V (a) 103 (b) 91
(c) 35.8 V (d) 41.7 V (c) 80 (d) 51
 3

[NAT] 21. [NAT]

18. A silicon npn transistor at T = 300 K has an area
An n-p-n BJT having reverse saturation current
of 10 –3 cm2, neutral base width of 1 µm, and doping
concentrations of NE = 1018 cm–3, NB = 1017 cm–3, NC IS =10–15 A is biased in the forward active region
= 1016 cm–3. Other semiconductor parameters are DB with VBE = 700 mV. The thermal voltage (VT ) is 25
= 20 cm2/s, E0 = B0 = 10–7 s, and C0 = 10–6 s. Assume mV and the current gain (β) may vary from 50 to 150
that the transistor is biased in the active region and the
due to manufacturing variations. The maximum
recombination factor is unity. What will be the
collector current (in A) for VBE = 0.5 V? emitter current (in μA) is ______.

[MCQ]
19. For a narrow base PNP BJT, the excess minority 22. [NAT]
carrier concentrations (nE for emitter, B for A BJT is biased in forward active mode. Assume
base, (nC for collector) normalized to VBE = 0.7 V, kT⁄q = 25 mV and reverse saturation
equilibrium minority carrier concentrations (nE0 current IS = 10–13 mA. The transconductance of the
for emitter, B0 for base, nC0 for collector) in the BJT (in mA/V) is ______.
quasi-neutral emitter, base and collector regions
are shown below. Which one of the following
biasing modes is the transistor operating in? 23. [NAT]
Consider two BJTs biased at the same collector
current with area A1 = 0.2 μm × 0.2 μm and A2 =
300 μm × 300 μm. Assuming that all other device
parameters are identical kT⁄q = 26 mV, the intrinsic
carrier concentrations is
10 –3 –19
1 × 10 cm , and q = 1.6 × 10 C, the difference
between the base-emitter voltages (in mV) of the
two BJTs (i.e., VBE1 – VBE2) is ________.
(a) Forward active (b) Saturation
(c) Inverse active (d) Cutoff 24. [NAT]
In the figure shown, the npn transistor acts as a
20. [NAT] [GATE-2016 : 2M]
The injected excess electron concentration profile in switch. For the input Vin(t) as shown in the figure,
the base region of an npn BJT, biased in the active the transistor switches between the cut-off and
region, is linear, as shown in the figure. If the saturation regions of operation, when T is large.
area of the emitter-base junction is 0.001 cm2,
Assume collector-to-emitter voltage at saturation
μn = 800 cm2⁄(V-s) in the base region and depletion
layer widths are negligible, then the collector current VCE(sat) = 0.2V and base-to-emitter voltage
Ic(in mA) at room temperature is (Given: thermal VBE = 0.7V. The minimum value of the common-
voltage VT = 26 mV at room temperature, electronic
base current gain ( 𝛼 ) of the transistor for the
charge q =1.6 × 10–19C) ________.
switching should be_____.
 4

25. [MCQ] 26. [MCQ]

The Ebers-Moll model of a BJT is valid An increase in the base recombination of a BJT will
increase
(a) Only in active mode
(a) The common emitter dc current gain β
(b) Only in active and saturation modes
(b) The breakdown voltage BVCEO
(c) Only in active and cut-off modes
(c) The unity-gain cut-off frequency fT
(d) In active, saturation and cut-off modes
(d) The transconductance gm.


 5

Answer Key
1. (c) 14. (d)
2. (c) 15. (a)
3. (9.85) 16. (d)
4. (12.56) 17. (a)
5. (60) 18. (17.2 to 17.6)
6. (b) 19. (c)
7. (b) 20. (6.55 to 6.75)
8. (d) 21. (1465 to 1485)
9. (c) 22. (5.7 to 5.9)
10. (a) 23. (379.00 to 381.00)
11. (b) 24. (0.89 to 0.91)
12. (d) 25. (d)
13. (c) 26. (b)

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 01
BJT Discussion
 1

EC Batch : Hinglish

Subject : Electronics Device & Circuits Practice Sheet- 01

Chapter : MOSFET
[MCQ] [MCQ]
1. For n-type MOSFET operating in accumulation 4. Value of MOS capacitor is minimum at
mode, the accumulated charges are: (a) Applied gate-source voltage equal to
(a) Acceptor ions (b) Electrons threshold voltage
(b) Applied gate to source voltage greater than
(c) Holes (d) Doner ions
threshold voltage for p-type enhancement
MOSFET
[MCQ]
(c) Applied gate to source voltage less than
2. Which of the following is true for a MOSFET threshold voltage for n-type enhancement
(n-type) operating in depletion mode of MOSFET
operation: (d) None of these
(a) Current can flow if applied voltage VDS is
greater than certain threshold voltage. [MCQ]
(b) Current can flow if applied voltage VDS is 5. Which of the following is correct regrading a
less than certain threshold voltage. MOSFET operating in triode region:
(a) VVR increases with decrease in channel
(c) Current can never flow for any applied voltage
length L.
VDS.
(b) VVR decreases with increase in oxides
(d) None of these.
layer thickness.
(c) VVR increases with increase in drain to
[MCQ]
source voltage.
3. At applied voltage VDS in inversion mode, the (d) VVR decreases with increase in gate to
channel formed is [in n-type MOSFET] source voltage in n-type MOSFET.
(a) Uniform throughout
(b) Tapred with less thickness near drain [MCQ]
terminal and more thickness near source 6. In an n-type MOSFET, capacitance offered by
terminal MOSFET in accumulation mode is
(a) Voltage variable capacitor
(c) Tapred with less thickness near source
(b) Charge storage changes linearly with
terminal and more thickness near drain
voltage
terminal
(c) Charge storage changes non-linearly with
(d) More thickness near drain and source voltage
terminal and less thickness in the middle (d) None of these
 2

[NAT] [MCQ]
7. Drain characteristic of an n-type MOSFET is as 11. In a n-type MOSFET, which of the following is true?
shown below: (a) Transconductance always increases with
increase in gate to source voltage VGS.

(b) Transconductance always increases with drain

to source voltage VDS.

(c) Transconductance always increases with

increase in drain to source voltage in saturation
region.
Then the value of V1 _____ volts. (d) Transconductance never changes with change in
gate to source voltage VGS in triode region.
[NAT]
8. Drain characteristic of an n-type MOSFET is as
given below: [NAT]
12. For n-type MOSFET, following data is given:
Threshold voltage Vth = 0.50 V
Applied gate to source voltage VGS = 2 V.
Drain to source is changed from initial value of
VDS = 1.20 V to VDS = 2.40 V, and thus
transconductance changes from gm1 to gm2.
Then the ratio of VVR resistance R1 at Ratio of gm2/gm1 is____________.
VGS = 2 V and R2 at VGS = 3 V i.e.
R1/R2 = _________ [NAT]
13. In n-type MOSFET the graph between
[MCQ] transconductance gm and gate to source voltage at
9. Transconductance of an n-type MOSFET constant VDS is given below:
(a) is independent of VDS in triode region.
(b) is independent of VGS in saturation region.
(c) linearly increases with VGS in saturation
region.
(d) non-linearly increases with VGS in triode
region.

[MCQ]
10. In a n-type MOSFET, in accumulation mode, net
charge on MOSFET is Then the value of conduction parameter
(a)  = Cox |VGS| (b)  = Cdep |VGS|  n C0x W
Kn = is ________ (mA/V2).
(c) zero (d) None of these 2L
 3

[NAT] [MCQ]
14. The graph between transconductance gm and VGS at 17. Which of the following is true about a MOSFET?
constant VDS is given below for n-type MOSFET: (a) Current always flows for any applied voltage
between drain & source in enhancement type
MOSFET.
(b) Current never flows for VGS = 0 in MOSFET for
any applied voltage VDS or VSD.
(c) Current always flows if inversion layer is
Then the value of current through MOSFET at created by applying proper gate to source
voltage for any VDS.
VGS = 2.4V & VDS = 1V is __________ (mA).
(d) None of these

[MCQ]
[MCQ]
15. In a MOSFET (n-type), gate to source voltage is
18. Which of the following is correct?
increased from VGS = 1V to VGS = 2V and value of
(a) Current increases due to channel length
VDS is kept constant at VDS = 1.1V. Threshold voltage modulation in saturation region.
is given as Vth = 0.4V. Then which of the following
(b) Current decreases due to channel length
is true? modulation in saturation region
(a) Transconductance will increase for entire (c) Current increases due to channel length
change in VGS from 1V to 2V. modulation in triode region.
(b) Transconductance will decrease for entire (d) Current decrease due to channel length
change in VGS from 1V to 2V. modulation in triode region.
(c) Transconductance will decrease initially then
becomes constant [NAT]
19. In n-type MOSFET with threshold voltage,
(d) Transconductance will increase initially then
Vth = 0.5V, the value of voltage variable resistance
become constant. is_____ (ohm) for VGS = 2.5V, VDS = 4V, and
 n Cox W
= 0.4 mA/V2
[MCQ] 2L

16. A MOSFET (n-type) is operating in saturation region

[NAT]
and gate to source voltage VGS is changed from 20. Following data is given for n-type MOSFET:
VGS = 2.5V to VGS = 3.5V. If Vth = 0.5V and initial Vth = 0.4V
current & transconductance are ID1 & gm1 and final VGS = 2.4V
current & transconductance are ID2 & gm2 then, which VDS = 5V
of the following is correct? IDS
= 1.5mA / V
(a) ID2 = 2ID1 & gm2 = 2gm1 VGS VDS

(b) ID2 = 2.25ID1 & gm2 = 2.25gm1 Then the slope of I DS vs VGS curve (in saturation
(c) ID2 = 2.25ID1 & gm2 = 1.5gm1 region) at VGS = 1.2V will be _________
(d) ID2 = 1.5ID1 & gm2 = 1.5gm1 ( mA / V . )
 4

[NAT] [MCQ]
21. In an n-type MOSFET, IDS = 1 mA is flowing in 26. In a MOSFET, which of the following is true?
saturation region. If channel length modulation (a) Transconductance changes with change in VGS
parameter  = 0.005 V–1, then the value of output but not with change in VDS due to channel length
resistance r0 is______ (k). modulation.
(b) Transconductance changes with change in VDS
[NAT] in saturation region due to channel length
modulation.
22. In an n-type MOSFET, following information is
(c) Current does not change with change in VDS due
given:
to channel length modulation.
IDS = 1 mA at VDS = 2 V and VGS = 2.5 V (d) None of these.
IDS = 1.01 mA at VDS = 3.2 V and VGS = 2.5 V
If threshold voltage is Vth = 0.5 V, then the value of [MCQ]
channel length modulation parameter  is ____ V . –1
27. Which of the following is correct in a MOSFET?
(a) Threshold voltage increases as oxide layer
thickness decreases.
[MCQ]
(b) Threshold voltage decreases as substrate doping
23. Which of the following statement is incorrect?
increases.
(a) Due to channel length modulation on-state (c) Threshold voltage decreases as channel length
current increases. decreases.
(b) Due to channel length modulation off-state (d) Threshold voltage increases as temperature
current increases. increases.
(c) Due to body effect threshold voltage increases.
(d) Due to increase in substrate doping threshold [NAT]
voltage decreases. 28. In an n-type MOSFET, current flowing through
MOSFET in triode region is given as:
IDS = 0.5 mA, VDS = 1 V, VGS = 2 V, Vth = 0.5 V
[MCQ]
If VDS is increased to 3 V, keeping VGS at the same
24. In an n-type MOSFET, by increasing VGS, we can value VGS = 2 V, then the value of current IDS is
increase the current ______ (A) if channel length modulation parameter
(a) Only in saturation region  = 0.01 V–1.
(b) Only in triode region
(c) Both in saturation region as well as triode [NAT]
29. In a MOSFET, channel length modulation parameter
region.
is  = 0.004 V–1. If output resistance between drain
(d) None of these.
and source terminal in ac-model of MOSFET has to
be 85 k, then the value of dc operating current that
[NAT] needs to flow in MOSFET is ______ (mA).
25. An n-type MOSFET operating in saturation region
with current ID1 = 1 mA. At this operating current the [MCQ]
30. MOSFET is used as a switch in
output resistance r01 = 110 kΩ. If current is increased
(a) Saturation region and cutoff region.
to 1.25 mA by increasing VGS in saturation, then the
(b) Triode region and saturation region.
value of output resistance r02 at new current
(c) Triode region and cutoff region.
ID2 = 1.25 mA is________ (k). (d) None of these.
 5

[NAT] [NAT]
31. C-V characteristics of a MOS capacitor is as given 34. Fermi level diagram of a MOS capacitor is given at
below: VGB = 0 as shown below:

If the potential difference across oxide layer is 0.2 V.

Si
If ratio of permittivity of = 3 and oxide layer Then the value of flat band voltage will be ______
SiO2 (volts).
thickness is 0.7 m, then the value of maximum
[NAT]
depletion region width in substrate region is
35. In a MOS capacitor value of maximum MOS
_______ (m). capacitance and minimum MOS capacitance is given
as:
[NAT] (CMOS)max= 5 F and (CMOS)min = 2.25 F.
32. In a MOS capacitor, value of oxide layer capacitance (Cdep )min
Then the ratio of is________.
is CMOS = 5 F. If MOSFET is operating in Cox

accumulation mode, the value of accumulated where,

charges at VGS = –2V is __________ C. (Cdep)min → minimum value of depletion region
capacitance
[MCQ] Cox → capacitance due to oxide layer.
33. Fermi level diagram of a MOS capacitor is given
[MCQ]
below:
36. Fermi level diagram of a MOS capacitor is given
below:

Then MOSFET is operating in

To create inversion layer, we need to apply
(a) Inversion mode
(a) A positive VGS voltage
(b) Accumulation mode
(b) A negative VGS voltage
(c) Depletion mode (c) VGS = 0 V
(d) Flat band mode (d) None of these.
 6

[MCQ] [NAT]
37. In a MOS capacitor, which of the following is true? 40. In a MOS capacitor inversion charge density (change
(a) In depletion mode, capacitance does not change
per unit area) is 10 C/cm2 at VGS = 2V. When
with change in voltage.
(b) In inversion mode, capacitance changes with VGS is increased to 3.4 V, then inversion charge
change in voltage. density is increased to 20 C/cm2, then the value of
(c) In accumulation mode, capacitance does not threshold voltage Vth is_________ volts.
change with change in voltage.
(d) None of these.
[NAT]
[NAT] 41. Consider a MOS structure with the following
38. In a MOS capacitor, fermi level diagram in depletion specifications: circular cross section of diameter 0.5
mode is given below: mm, SiO2 layer of thickness 80 nanometers, relative
permittivity of SiO2 is 4 and 0 = 8.854 × 10–14 F/cm.
If the dielectric strength of SiO2 film is 107 V/cm, the
breakdown voltage of the MOS capacitor is ______
Volts.

[MCQ]
Then the value of electric field at midpoint of the 42. In MOSFET channel length modulation is
oxide layer (magnitude only) is _______ kV/cm. characterized by . If channel length is ‘L’ then
Si (a)  is proportional to L2
Given : =3
SiO2
(b)  is proportional to L
(c)  is inversely proportional to L2
[MCQ] (d)  is inversely proportional to L
39. High frequency C-V characteristics of a MOS-
capacitor is given below:
[MCQ]
43. Figure shows the dimensional energy band diagram
for an ideal MOS-C operated at T = 300 K with
VG  0. Note that EF = Ei at the Si-SiO2 interface.

Points R, Q, P respectively represents:

(a) Accumulation, depletion, inversion
(b) Depletion, inversion, accumulation For the value of ni = 1010, the value of NA is

(c) Inversion, accumulation, depletion (a) 9.7 × 1014 /cm3 (b) 1.073 × 1015 /cm3

(d) Inversion, depletion, accumulation (c) 1.073 × 1019 /cm3 (d) 9.7 × 1021 /cm3
 7

[MCQ] [MCQ]
44. The high frequency C-V characteristics curve of an 47. A certain p-channel MOSFET has the following
MOS capacitor is shown in figure. parameters:
Doping concentration Na = 3 × 1017 cm–3
Relative dielectric r = 11.8
constant
Relative dielectric ir = 4
constant of SiO2
Insulator depth d = 0.01 m
Operating temperature T = 300 K
Intrinsic carrier ni = 1.5 × 1010 cm–3
concentration
The area of the device is 2 × 10–3 cm2. The metal- The threshold voltage is
semiconductor work function difference is (a) 0 (b) 1.7 V
ms = – 0.50 V, the oxide is SiO2, the semiconductor (c) 28 V (d) 5.6 V
is silicon and the semiconductor doping
concentration is 2 × 1016 cm–3. [MCQ]
What is the equivalent trapped oxide charge density 48. A certain p-channel Si-MOSFET has the following
parameters:
(electronic charge per cm2)?
Doping concentration Na = 1.5 × 1017 cm–3
(a) 1.875 × 1011 cm–2
Relative dielectric r = 11.8
(b) 3 × 10–8 cm–2 constant
(c) 5 × 1011 cm–2 Relative dielectric ir = 4
(d) 4.8 × 10–27 cm–2 constant of SiO2
Insulator depth d = 0.02 m
Operating temperature T = 300 K
[MCQ]
Intrinsic carrier density ni = 1.5 × 1010 cm–3
45. Consider a p-channel enhancement mode MOSFET
The surface potential for strong inversion is
with kp = 40 A/V2. The device has following
(a) 4 V (b) 0.838 V
observation.
(c) –4V (d) –0.838 V
ID = 0.225 mA at VSG = VSD = 3 V
ID = 1.4 mA at VSG = VSD = 4 V [NAT]
The value of threshold voltage VTH is 49. An ideal MOS capacitor (p-type semiconductor) is
(a) 2.33 V (b) –2.33 V shown in the figure. The MOS capacitor is under
(c) 3.29 V (d) –3.29 V strong inversion with VG = 2V. The corresponding
inversion charge density (QIN) is 2.2μ C/(cm2).
Assume oxide capacitance per unit area as
[NAT]
COX = 1.7 μF/cm2. For VG = 4 V, the value of QIN is
46. An NMOS-C is maintained at T = 300 K and the
_____ μC/(cm2) (rounded off to one decimal place).
silicon doping is NA = 1015 /cm3 and
ni = 1010 / cm3, r = 11.8.
What is the value of ES (in kV/cm) when S = F?
 8

[MCQ]
50. For a MOS capacitor, Vfb and Vt are the flat-band
voltage and the threshold voltage, respectively. The
variation of the depletion width (Wdep) for varying
gate voltage (Vg) is best represented by

(a)

(b)

(c)

(d)


 9

Answer Key
1. (c) 26. (b)
2. (c) 27. (c)
3. (b) 28. (570.94) (Range 570 to 571)
4. (a) 29. (2.94) (Range 2.90 to 3.00)
5. (d) 30. (c)
6. (b) 31. (2.31) (Range 2.31 to 2.31)
7. (2.806) (Range 2.80 to 2.90) 32. (10) (Range 10 to 10)
8. (1.67) (Range 1.60 to 1.70) 33. (b)
9. (c) 34. (–0.42) (Range –0.42 to –0.44)
10. (c) 35. (0.82) (Range 0.80 to 0.85)
11. (d) 36. (b)
12. (1.25 to 1. 25) 37. (c)
13. (0.25 to 0.25) 38. (8.4) (Range 8.4 to 8.4)
14. (2.25 to 2.25) 39. (d)
15. (d) 40. (0.6) (Range 0.6 to 0.6)
16. (c) 41. (80 to 80)
17. (c) 42. (d)
18. (a) 43. (b)
19. (625 to 625) 44. (a)
20. (0.612) (Range 0.60 to 0.70) 45. (b)
21. (200) (Range 200 to 200) 46. 9.56(9.50 to 9.70)
22. (0.0083) (Range 0.007 to 0.009) 47. (b)
23. (d) 48. (b)
24. (c) 49. (5.5 to 5.7)
25. (88) (Range 88 to 88) 50. (b)

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01 Discussion
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