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2.1 TRANSISTORS
The transistor is the main building block ―element of electronics. It is a
semiconductor device and it comes in two general types: the Bipolar Junction
Transistor (BJT) and the Field Effect Transistor (FET).
It is named as transistor which is an acronym of two terms: ―transfer-of-resistor. It
means that the internal resistance of transistor transfers from one value to another
values depending on the biasing voltage applied to the transistor. Thus it is called
Transfer resistor: i.e. TRANSISTOR.
A bipolar transistor (BJT) is a three terminal semiconductor device in which the
operation depends on the interaction of both majority and minority carriers and hence
the name bipolar. The voltage between two terminals controls the current through the
third terminal. So it is called current controlled device. This is the basic principle of
the BJT
It can be used as amplifier and logic switches. BJT consists of three terminals:
Collector: C
Base: B
Emitter: E
TYPES
There are two types of bipolar transistors
NPN transistor
PNP transistor.
TRANSISTOR CONSTRUCTION
PNP Transistor: In PNP transistor a thin layer of N-type silicon is sandwiched between
two layers of P-type silicon. NPN Transistor: In NPN transistor a thin layer of P-type
silicon is sandwiched between two layers of N-type silicon. The two types of BJT are
represented in figure2.1.1
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Figure 2.1.1 Transistors: NPN, PNP
[Source: “Electronic devices and circuits” by “Balbir Kumar, [Link], and Page: 210]
The symbolic representation of the two types of the BJT is shown in figure 2.1.2
Figure 2.1.2 circuit symbol: NPN transistor, PNP transistor
[Source: “Electronic devices and circuits” by “Balbir Kumar, [Link], and Page: 210]
Junctions:
There are two junctions in this transistor – junction J-1 and junction J-2
The junction between or C-B junction. Collector layer and base layer
is called as collector-base junction
The junction between base layer and emitter layer is called as base-
emitter junction or B-E junction. The two junctions have almost same
potential barrier voltage of 0.6V to 0.7V, just like in a diode.
Equivalent diode representation:
The transistor formed by back to back connection of two diodes
The states of the two p n junctions can be altered by the external circuitry connected
to the transistor. This is called biasing the transistor. Usually the emitter- base junction
is forward biased and collector –base junction is reverse biased. Due to
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Emitter-Base Collector- Base
Modes
junction junction
Figure: 2.1.3 NPN-PNP Transistor
[Source: “Electronic devices and circuits” by “Balbir Kumar, [Link], and Page: 211]
Forward bias on the emitter- base junction an emitter current flows through the base
into the collector. Though, the collector –base junction is reverse biased, almost the
entire emitter current flows through the collector circuit.
Figure 2.1.4 Transistor biasing: PNP transistor, NPN transistor
[Source: “Electronic devices and circuits” by “Balbir Kumar, [Link], and Page: 211]
A single p n junction has two different types of bias:
Forward bias
Reverse bias
There are two junctions in bipolar junction transistor. Each junction can be forward or
reverse biased independently. Thus there are four modes of operations:
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Cutoff Reverse Reverse
Active Forward Reverse
Saturation Forward Forward
Reverse Reverse Forward
active
Table 2.1 Modes of operation of transistor
Forward Active
In this mode of operation, emitter-base junction is forward biased and collector base
junction is reverse biased. Transistor behaves as a source. With controlled source
characteristics the BJT can be used as an amplifier and in analog circuits.
Cut off
When both junctions are reverse biased it is called cut off mode. In this situation
there is nearly zero current and transistor behaves as an open switch.
Saturation
In saturation mode both junctions are forward biased large collector current flows
with a small voltage across collector base junction. Transistor behaves as a closed
switch.
Reverse Active
It is opposite to forward active mode because in this emitter base junction is
reverse biased and collector base junction is forward biased. It is called inverted
mode. It is no suitable for amplification. However the reverse active mode has
application in digital circuits and certain analog switching circuits.
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TRANSISTOR CURRENTS
Figure 2.1.5 Transistor current flow directions
[Source: “Electronic devices and circuits” by “Balbir Kumar, [Link], and Page: 215]
The arrow is always drawn on the emitter The arrow always point toward
the n-type
The arrow indicates the direction of the emitter current:
PNP: E-> B
NPN: B-> E
IC = the collector current, IB = the base current, IE = the emitter current
OPERATION OF AN NPN TRANSISTOR
Emitter base junction is forward biased and collector base junction is reverse biased.
Due to emitter base junction is forward biased lot of electrons from emitter entering the
base region.
Base is lightly doped with P-type impurity. So the number of holes in the base region is
very small.
Due to this, electron- hole recombination is less (i.e,) few electrons (<5%) combine
with holes to constitute base current (IB)
The remaining electrons (>95%) crossover into collector region, to constitute collector
current(IC).
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Figure: 2.1.6 Current in NPN transistor
[Source: “Electronic devices and circuits” by “Balbir Kumar, [Link], and Page: 216]
Figure: 2.1.7 Current in PNP transistor
[Source: “Electronic devices and circuits” by “Balbir Kumar, [Link], and Page: 216]
Emitter base junction is forward biased and collector base junction is reverse biased.
Due to emitter base junction is forward biased lot of holes from emitter entering the
base region and electrons from base to emitter region.
Base is lightly doped with N-type impurity. So the number of electrons in the base
region is very small.
Due to this, electron- hole recombination is less (i.e,) few holes (<5%) combine with
electrons to constitute base current (IB)
EC8353 ELECTRONICS DEVICES AND CIRCUITS