Chapter -3 - Bipolar Junction Transistors
Transistor Construction:- There are two types of transistors: • pnp • npn The terminals are labeled:
• E - Emitter • B - Base • C – Collector.
The npn BJT consists of three semiconductor regions: the emitter region (n type), the base region (p
type), and the collector region (n type). •The pnp BJT consists of three semiconductor regions: the
emitter region (p type), the base region (n type), and the collector region (p type).
The transistor consists of two pn junctions, the emitter–base junction (EBJ) and the collector–base
junction (CBJ).
Emitter: The portion on one side of transistor that supplies charge carriers (i.e. electrons or holes) to
the other two portions. The emitter is a heavily doped region. Emitter of PNP transistor supplies
hole charges to its junction with the base. Similarly, the emitter of NPN transistor supplies free
electrons to its junction with the base.
Collector is the portion on the other side of the transistor (i.e. the side opposite to the emitter) that
collects the charge carriers (i.e. electrons or holes). The doping level of the collector is in between
the heavily doping of emitter and the light doping of the base.
Base: The middle portion which forms two PN junctions between the emitter and the collector is
called the base. The base of transistor is thin, as compared to the emitter and is a lightly doped
portion. The function of base is to control the flow of charge carrier.
BJT Modes Of Operation:- Forward Active, Cut off, Saturation.
FORWARD ACTIVE Emitter-base junction is forward biased and collector-base junction is reverse
biased. The BJT can be used as an amplifier and in analog circuits.
CUTT OFF When both junctions are reverse biased it is called cut off mode. In this situation
there is nearly zero current and transistor behaves as an open switch.
SATURATION In saturation mode both junctions are forward biased. Large collector current
flows with a small voltage across collector base junction. Transistor behaves as an closed switch.
Operation of pnp transistor in active mode :- With the external sources, VEE and VCC, connected as
shown: • The emitter-base junction is forward biased • The base-collector junction is reverse
biased. IE = IC + IB. The minority current is called the leakage current and is given by the symbol ICO
(IC current with emitter terminal Open).
Common Base Configuration:- The base is common to both input (emitter–base) and output
(collector–base) of the transistor.
Operating Regions:- Active – Operating range of the amplifier. It is noticed that IE is approximately
equal to IC (IC≈ IE ). Cutoff – the region where the collector current is approximately 0A (IC=ICBO).
The amplifier is basically off. There is voltage, but little current.
Saturation – Region to the left of VCB =0. Note the exponential increase in collector current as the
voltage VCB increases toward 0 V. There is current but little voltage.
Emitter and collector currents: IE = IC, Base-emitter voltage: 0.7V (for Silicon) BE V