CBSE BOARD EXAM 2026 REVION PAPER -1
CHAPTER: SEMICONDUCTORS
1. In case of a semiconductor which of the
following statement is wrong 7. A p-type semiconductor is
(a) Temperature coefficient of resistance is (a) a silicon crystal doped with arsenic
negative impurity.
(b) Resistivity of semiconductors is in (b) a silicon crystal doped with aluminum
between conductors and insulators impurity.
(c) Doping increases the resistivity of (c) a germanium crystal doped with boron
semiconductor impurity.
(d) At absolute zero intrinsic (d) a germanium crystal doped with
semiconductors behave as insulators. phosphorus impurity.
2. A strip of copper and another of germanium 8. The breakdown in a reverse biased p-n
are cooled from room temperature to 80 K. junction diode is more likely to occur due to:
The resistance of: (a) large velocity of the minority charge
(a) each of these decreases carriers if the doping concentration is
(b) copper strip increases and that of small
germanium decreases (b) large velocity of the minority charge
(c) copper strip decreases and that of carriers if the doping concentration is
germanium increases large
(d) each of these increases (c) strong electric field in a depletion region
3. The forbidden energy band gap in if the doping concentration is small
conductors, semiconductors and insulators (d) none of these
are Eg1, Eg2, and Eg3 respectively. The 9. What are the processes that occur during
relation among them is: formation of a p-n junction?
(a) Eg1 = Eg2 = Eg3 (b) Eg1 < Eg2 < Eg3 (a) drift (b) diffusion
(c) Eg1 > Eg2 > Eg3 (d) Eg1 < Eg2 > Eg3 c) both (a) and (b) (d)None of these
4. The forbidden energy gap is maximum for: 10. Which of the following is the reason about
(a) Mercury (b) silicon diffusion current?
(c) Diamond (d) silver (a) diffusion of holes from p to n
5. A semiconductor has equal electron and (b) b)diffusion of electrons from n to p
8 −3
hole concentration of 6×10 m . On doping (c) both (a) and (b)
with certain impurity, electron (d) None of these
12 −3
concentration increases to 9×10 m . The 11. In the depletion region of a diode
new hole concentration is : (a) There are no mobile charges
5 −3 4 −3
(a) 4 × 10 m (b) 4 × 10 m (b) Equal number of holes and electrons exist,
5 −3 6 −3
(c) 4 × 10 m (d) 4 × 10 m making the region neutral.
6. Let nh and ne be the number of holes and (c) Recombination of holes and electrons has
conduction electrons in an intrinsic taken place.
semiconductor. Then: (d) Immobile charge ions exist.
(a) nh > ne (b) nh = ne [Link] of the following is donor impurity
(c) nh < ne (d) nh ≠ ne (a) Al (b) B (c) P (d) In
[Link] an unbiased p-n junction, holes diffuse 18.A n-type semiconductor is
from the p region to n-region because (a) negatively charged
(a) free electrons in the n-region attract (b) positively charged
them. (c) Neutral.
(b) they move across the junction by the (d) None of these.
potential difference. [Link] a p-n junction diode is reverse biased,
(c) hole concentration in p-region is more as (a) The potential barrier is lowered.
compared to n-region. (b) The potential barrier remains
(d) All the above. unaffected.
[Link] of the following energy band (c) The potential barrier is raised.
diagram shows the n type semiconductor? (d) The current is mainly due to majority
carriers.
[Link] n-type semiconducting Si is obtained by
doping intrinsic Si with :
(a) Al (b) B (c) P (d) In
21.A p-n junction diode is forward biased. As
a result,
(a) Both the potential barrier height and the
width of depletion layer decrease.
(b) Both the potential barrier height and the
width of depletion layer increase.
(c) The potential barrier height decreases
and the width of depletion layer
increases.
(d) The potential barrier height increases and
the width of depletion layer decreases.
[Link] the following diagrams, indicate which
[Link] band gap for a pure semiconductor is
of the diodes are reverse biased?
2.1 eV. The maximum wavelength of a
photon which is able to create electron- hole
pair is
(a) 620 nm (b) 589 nm
(c) 598 nm (d) 489 nm
16.A potential barrier of 0.4 V exist across a
PN junction. A constant electric field of
magnitude 106 V/m exists in the depletion
region. The width of depletion region is
(a) 4×10−7m (b) 0.1mm
−7
(c) 5×10 m (d) 2mm
[Link] conduction in a semiconductor
takes place due to
(a)A,B and C (b)B ,C and D
(a) electrons only (b)holes only
(c) A,B and D (d) A and C.
(c) Both electrons and holes
(d) Neither electrons nor holes.
[Link] circuit has two oppositely connected
ideal diodes in parallel. What is the current
flowing in the circuit?
(a) 2.0 A (b) 1.33 A
(c) 1.73 A (d) 2.31 A
24. In the half-wave rectifier circuit shown.
Which one of the following waveforms is
true for VCD the output across C and D?
[Link] figure shown V-I characteristic curve
of a diode. What do the points P and Q in
figure represent?
(a) Forward bias and reverse bias
(b) reverse bias and Forward bias
(c) breakdown voltage and Knee voltage
(d) Knee voltage and breakdown voltage.
1 mark questions:
1. Which property of a p-n junction diode 8. Assuming that the two
makes it suitable for rectification? diodes D1 and D2 used in the electric circuit
2. Write the output frequency of an input shown in the figure are ideal, find out the
signal of frequency is 50 Hz in (a) half wave
value of the current flowing
rectification (b)full wave rectification.
3. Draw the circuit symbol of (a) Photodiode through 1Ω resistor.
and (b) LED
4. How is a sample of an n-type semiconductor
electrically neutral though it has an excess of
negative charge carriers?
5. Draw the output signal in a p-n junction diode
when a square input signal of 10 V as shown
in the figure is applied across it.
9. The V-I characteristic of a silicon diode is
shown in the Fig. Calculate the resistance
of the diode at (a) ID = 15mA and (b) VD=
–10V.
6. Name any two reverse biased diodes?
7. Two semiconductor materials X and Y
showed in the figure are made by doping
germanium crystal with indium and arsenic
respectively. The two are joined end to end
and connected to a battery as shown, (i) Will
the junction be forward or reverse biased? (ii)
Sketch a V-l graph for this arrangement