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ADE Chapter 2

The document discusses transistor biasing and thermal stabilization techniques, focusing on self-bias and bias compensation methods. It highlights the use of negative feedback to improve stability while noting its impact on amplifier gain. Additionally, it details diode compensation techniques to address instability caused by variations in VBE and ICO, ensuring consistent collector current despite temperature changes.

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3 views28 pages

ADE Chapter 2

The document discusses transistor biasing and thermal stabilization techniques, focusing on self-bias and bias compensation methods. It highlights the use of negative feedback to improve stability while noting its impact on amplifier gain. Additionally, it details diode compensation techniques to address instability caused by variations in VBE and ICO, ensuring consistent collector current despite temperature changes.

Uploaded by

rkmaharshi1108
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

Analog and Digital Electronics :

Chapter-2
Transistor Biasing and Thermal Stabilization
Self Bias
Bias Compensation
So far we have seen different stabilization techniques. The stabilization
occurs due to negative feedback action. The negative feedback,
although improves the stability of operating point, it reduces the gain of
the amplifier.
As the gain of the amplifier is a very important consideration, some
compensation techniques are used to maintain excellent bias and
thermal stabilization. Let us now go through such bias compensation
techniques.
Diode Compensation for Instability
These are the circuits that implement compensation techniques using
diodes to deal with biasing instability. The stabilization techniques refer
to the use of resistive biasing circuits which permit IB to vary so as to
keep IC relatively constant.
There are two types of diode compensation methods. They are −
•Diode compensation for instability due to VBE variation
•Diode compensation for instability due to ICO variation
Diode Compensation for
Instability due to
VBE Variation
In a Silicon transistor, the
changes in the value of
VBE results in the changes in
IC. A diode can be employed
in the emitter circuit in order
to compensate the
variations in VBE or ICO. As
the diode and transistor
used are of same material,
the voltage VD across the
diode has same temperature
coefficient as VBE of the
transistor.
The diode D is forward biased by the source VDD and the resistor RD.
The variation in VBE with temperature is same as the variation in
VD with temperature, hence the quantity (VBE – VD) remains constant.
So the current IC remains constant in spite of the variation in VBE.
Diode Compensation for Instability due to
ICO Variation
The following figure shows the circuit
diagram of a transistor amplifier with diode
D used for compensation of variation in ICO.
Condition for thermal stability

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