PagetNo 3t
Date
SEMICONDUCTOR thECTRONICS
ENERGY BANDS: Snmde thecytal, each alethen
laas a nique positou and no tui elethonu see
exactiy
Becauteof this, each oleotion mill lane a
terent aug dawel. heaolitteramt
atth centinits euny ariatie ane
enrsy.
Enehay Bamd.
VALENCE ENERSY BAND : Ihe eninsy band uhih
ineud he enirgy leue
Fa of the ualemce electhns is calleol the Valonce Band.
his band may be partily or cepltely taled uwit
lelocton. Qhi baad is heler esmty clad cenb
lofely with alence -electroms at dbssut 2eo.
CONDUCTION ENEAGY BAND:1henegy band
abone tthi valmce
bana mhich may be cewylatoly emtitay
emhtiy as Called as the Condubtign Band
ar pantialley
Ohis Band is Completely emty at abieute Zexo.
ÉNERGYyGGAP : fenmee u the teta the
valenee bamd and botom f the
foabiddem enyg Gas (E).
ign bamd.
D1sTINCTION BE TWEEN CONDUCTOAS (or METALS).
SEMICONDUCTORS AND INSULATORS ON THE
BASIS OF ENERGY BANDS:
(1) DYETALSCCONDUCTORS): n metals, thare
ane two Kituatous, au stuatcuti),
Page No32
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plaenauctien bandas fartialy c.8,
felled aund thealamee band
hi nantially emityIhene Ec.
as asnall-eneng4kl) Ev
valene band casoamly
mone to the ceudustien kud.
m mttatiouii), the Caudueti
bamd aud alace baundoonlah
lane auailbe uthe coseetieu
band
Due to tais, t e neastauce of aendueterA
(21LNSULATORS
npt inulatyu, thvalenaes
and the
Ailed
band
Eq>3ev ig ematy Iheeuxy banl
at elacthoná can wat be
Ev excited frem the ualence
cenndectien
Baud
band. Bo, slecthical Com
-ductien an the inalato s ampaubla.
(3)SEMICONDUCTORS n seiondctoas, the
Valanee band a Cembletey
Because of gaf at oem temspe
Aaukkau
Page No 8Y0
Date
yEmytig -hatuue, tme eleetmá
Coviduttou
band
wthe valnee band
tycsev therul enngt
tucress the euegy g9p
Valene and ent the cenductien
Jband bamd. hese eleethnt
Caw mee to thecanduetigutand. ttemce the
presistane ofnemiconducton ià mat ashigh an that
tos the inaulatrs.
INTRINSIC SEMI cONDUCTOR
ity in called intinsie Aemiconduato.
Geimanium (Gie)aud Silicen (Si) au te nestcommug
exanleA f nthiicemiconduetors.
Sma pure Aemicemdueturcrytal lattice, eaea Ge or
Si atom hasfouh alemee electhee. Iheneelesthen&
laneshaned mith towr alnce electhon af fout
plitfenent naiplboining atoma. Ihee shanid elactrona
[Link] lbanda
Due to which the Gie ah Si atoms nthestruct
strsnçly held by coalent bomda
Sehematic model iotSion Ge Schematic model of
stuetune at law temjenatune qeneration of hole moerata
hla Thmelyt
7enenete
uwelact
4: Sion Ge aton)
CovaltBond
Bonceng elsctns
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HoLE FORMATION:hew tau temaeaalune as
increane dthew mere thenmal
enensy becomes awaikahle ta the sharedebctns
ad me of thee alecthen becoMe fee thew
lcovalet bonds break.
So whea conualent band breaki and. an elee
qUacancy in the bind. lhia Vacamey with the
etteatine posctne electmit charge Ctè )ia called
Hole. nhe hle b. haes as Qmaranemt ee
gahhicla uthefective sastne charje
Gn intrisie Bemicevdote the nundex of
whene n scalled ntrinie Cashien CoMcentratten.
ENERGYy BAND DIAGRAM OF INTAINSIC
SEMICONDUCTOR
At Tia oK, tevalnee
Cendutn
baw
pled anal tthe
Lia band ia camoltely
-enity. As no elecbe
Condactisu so
Valnce it acta an au
bandi nslata
AT T>OK
Page Ne &
Date
Miocn temhenatne (T2OK)
eleetres n waleuce band gaun
the electoms mome ieu the
aleuce bandnto th cend
-uetio band
Ahene thamally excited ehchou
-A partialy accupy the cond
At T>OK -uctiou band.
ExTRINSIC SEMICONDUCTOR
An exthinsie semicenuota is imbre semicenducta
thew a snall ammeunt of duitakla inpunity ià odded to
puesemicenacts, tte Conduetity af the Beni
conductss is inceased manifold. Bdeh mateials
he hno as exthinsic semiconduatot
DOPINGhe oleliserate additien of adoaiealke infunit
s called Deping amd he imusity atomk
bune called Dopast, Suh a material ia
doped seicenduotok
Lalled
CHARACTEAISTICS OF DDOPANTS (0Thedopant has tobe
suel tthat it ooes wat oitost tne aigenal pure Rmi
ceuduotoattice
Crjatl.
(iiis Ihe izes o dotantacnd tthe semicanductoY
atom slhsuld ae neanlyAame.
.TYPES OF DoPANTS : ENTAVALENT DOPANTS :
Valey af pewtauaot datat m5. e4. Arsemie lAs)
ii
Antinieny (Sb). PhoAphous (P) ete
TAVALENT DOPANTS: Valncy of thivaleut dat
-ant is &. eq. Lndiumm (In), erei(e3,4uminiulA
/ Page No 43
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YPES COF ExTRINSIC SEMICONDucTORS
Þ) n-Tbe semiconduetors
whea pesntaualet elenert(ts Y )adoped
a benicendueton Sicrystallatbice,
t e pasntieu o
pentalualet atom occuhes Foay
demaicoaluetas Si ato op itaelectruna
a atmi(Si- atoma)
|bond aita fos semiceduct
wlaile tae pith electhm Aemaima ey weakly
boaad to it pareut atomm.
cnystal
Aao, thin elesthom is laee to moue n taepenta
Lattice at oom temnerate, ahus. the
-valeat atomdonates eme extra electhen pY
Sisieete coudutiowof eleticityis due ta the
i.e negatiwe daaxges otsenmie).
mstiaafelectiuni
ntye cannirs, henelone the Aentias
endata io called domoktype on H-type a
semiconducto.
:boo- adopeclsemicemduetoa
mth pentavalut inuney ttae
total no,of Conoucteu
unbonded tree electo(De) iaAum
S l e t r e n donated of the elachene Cevt
by pertaualut atany-hibuted bydonoA
-hated itriicall
whte the total no. of
elactu laalenlna) is oly du
Dono to the loles ta the
Cone inthimic seurc teucQ
M a exthy semicenducoy
Date
coted wth petavalat imtuty Elecions becomne
maonity charge caeNS awd holu are te mninorty
caes i.e. ne>>Mg.
chaxse ENERGY BAND DIARRAM OF
n-tye semiconducto
AtT>OK
n-type smicendiuctar,
Ec 1Joey Ep msli_htu, belsw the
-"ED
bottom E. of Conductigu
bamd acl ttheaecthons
tem hio level Ep mane
Ev iata the cenduetien band
(i)þ-type semiconductor
Whewa thicaleut imuty s dotedi a42micensucto
Sierystallatice, thwa tivaliut atm oceupras the
positiom cÇ Si-atom. As the dafant has ene unlsmee
plethen less thaRmicenduetor atom, theretere
this atoma ferma coualut boda th neighbaihg
three senmiceudueto atom &ut does nat hanse am
elethem to oles to the founth Si-atom. So, the benol
hetwen the fouuta neiglbauing atom and thivalt
atom hasa acaney Dn hoe.
lhus, te thialent atom becommes negaturely
chaxged tew t shares fousth eicthan
+wing semicgmducts atoncd hamee, it accasta me
electhen ine. the tivaleut atom ques eme laoe anal
tis tueum as Acceto atom
Aaubkau
Page No
Date.
Sa this-esthinaic semicenduatas
hsles cotaibutes by ooeeptahs
andl the hales geneated imbin
9 ically, sataite'te tata lnumaber
elethne ne ia enlyoue to
BouYce
fAcceptor
Core
hs fo auch amignducton
Hole
the lhsles ae majOHity ohar
Caiers cual the eleethon ane
minasitcaiens. Iheseendi
endutoik ane kneun as p-tyhe
ENERGY senicndctors. n > ne
BAND DIAGAAM OF p-TypeSemiconduatons
At T> ok
p-tyloe semiceadueton,
tthe aceptar euNgy leuel
EAia alightly aboue' the
Ec top of valeice lannd (Ev)
ofehganeleethoe
EA
pram the valemee band
[Link]
-0.05 ev Ey can mh to the leuel
E a emine the
accasiternagatvely
he eletm ad aole cemeenmthatimi a
semicamdcton in thenmalegilibum in
Anabhau
/Page No
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amd Ge
he ciferenmce in the enistunty
dapena pem te euegy qafbtuwesm
ofC,Si. theit
concctigu and Lalance banda FaY C, Si and qe,
he eueHy gapA ane S. 4eV, lleV and o7eV resee
tiuely. Sn also n agrous elemt but itis
melal beeause thieugyga iu itb case oeV.
þ-n duNCTION
Ap-n jumetion is fonunec by addig preeiacly a
Konall4amtity of entavalest impunity tod thin
p-tyte Si senicedeetor cwafer ot byading a
smalqumtity of tialeut inpnity to a thin
m-kypi Si seniicenducler wafer.
p-n jwnctionfformation
DEPLEToNkEGIONFOAMATION
AND BARAIERFELD
a ann ky2esemicamduete, thecomcentatieu of
elethon is me thacomeemtnatini od daoes.
Amd nap-tybeAemicemduato, the coneetatieu o
halesi mone tham coneemthatiem eletons.
Due ta thia Comentaatien gadieat, lholenaliffune faonm
pside to n-sideand eleethons
lp-side.
hwheuamelectew citfuuses fhamn to p.t leaves
Jbehind am iomised doas (poitive chae) an n-ide.
hhisinised dmas is mmmobile, Au tthe electhns Com:
tinue to diuse tiom npa dayero poitie chage
Lou nide (or posutuespace- chare ra_ien)sfonmed.
wheu ahale eses cst P h , it
aaes belhind an donised
charsearge)
pn p-Mde. his ngatine A
Arubkau)
Page No_3
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Ace-dhage nagen on eithn side of theine
tien tgethera knoun as Debletien tiegion.
Ogectondriftu>
teole diftwnm tale Drift.
BaNti Fiëld iDe to thepasitive space-charse
ntieu, electiic idd cintad
n postiue charge tomwandi negatiecharge
themeemeit o elecirem ana he n-Aeqims
mion-gieu.
BahhienPotentialL: he los of eleetnona hom
tenasss amal te 'gaim
of eleclhew ay the p-kagiou causesa pstentlal
Hference acsthejnetiou. Ihe polaky
phipeatial in uei as to ofyfaone the
plouof canier o that a camditigu
h i i-exitta.
guilile
-tamds to prent the Runthe mavemt
e1 electeafom n Nagoa anto [Link] and
as Bavthi Patente.
Asubkau
Page No
Date.
Depletien
W
agien
Eearier
Diode undea cquilibiVeo) ndnnobias
here ane tuo imbortat roceses cduing the
Romation of p-n jumetio
) DIEFUSiON- heu hees moe
a n-sde (p’n) and elertoms som n-sie to
p-idetheu aue to the metieu of claÇe caiehs
gies ise toa citsieu Curet acvssthefecuen
(ii 'DRIET - Due to tthe bain field (an eictee
to negatiane chorse), an elictho npside
of the jumetiou moves to n-dla aalhole mn-ndo
menen to [Link] motiee f
charse car rieYA de to the caled
Dript hus,a cift cusuent is et up
onte diechou of diffusceu couit
Depletion hegion ià the pacecharge kugee oru
ether ade of Mhe
rnobile charje caaiera.
Width of dahletiou Rpiou( N) detanes the rasi
stamee "o t e p-nimcN disde
Wecan nat measue the poemial anser ot a
p-n junetin bga cennectung a senatiue vdttmeti
Aaukkan
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fozunand Baning pnjnctien-offens inote hesistame
Asmieaduats dbde is a p-fmeti sarith
metallieAmtacta prrded ot.
texternal alkage. is a tus teninal devices
hheoliectiew df arYoLD indicates tthe cemertinal
BIASING OE þ-n junction
FORINARD BIASNGAp-n jimetuau iseic to be
foaaxd biasedi tae pestue
tenminalo theextnnal batteny s connecteol to
p-sideand the negatiue tenminal to then-0de
Pnfusmetiou W
Sa fonaol bioning, the odikastien of the atalied
attäge(V) io offositi tu the bacia poteutiai V
|So, the efectiwe Bavien
|potetsl bndh
bias become Valand
Asaresult,th oiapletiou
ayes wiclth clecseaes
and tha lbnmier Railht nAaducad
Sue to the movenent of mayoty
elethi.
chage car nens
pcros the p-ngumetiou, am net
Aauskau
|Date
land the
VI haracteristies inFowand Bias
(foAward Bias chaacternistica
he grahioal elatien betweu forwanal bias valt
age bnplied ta p-njunctigu. aandh thi torad. eut
lan tie forurard chayacteristicA.
Voltmalay) T(mt)
milamd o
Bateny 20
lo V(Valt)_
ill the uottage acos the oliode crSses
acentaim value. ter theaanactenistievsltage, the doce
arent incrensei siaaticantly (ogonentally)eve for
boey samall aincsease iu te diode bias [Link]
oltaae o callad tthe thrahld voltase Oreutin vatta_e
|(o.2Vfor Ge and o7Vf si diida ).
REVERSE BIASING Apn yumetin is said to be
terminal of the etenal attery s conected to
n-side amd'the nagatie tumine ta p- side af pn
P
Aaubkau
/Page No
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euae biasing the dineotien of arhled cg
Ws Bamme as the dinetien potontia Vo.
e baie
eighe)nd AeeHAe tias become Vot V
pand thefectiebari
|Aoglt is inereaned
neHAe Aea'ng, the
bn eknAe biasing, the sreueAR bias wsttage (a
lied uatuse ) Burbota tthe poteutial bassi Va)
land the nmajssity caeis asa pallad auay frem
t jumetiedand Hae dapletigu kagisu bacosa thick
se aene is no conolctieu across tefuuctieu due
tomajsutaycaszisnd.
attew deing acceliatedy plu Aenen laias attoe
biectim wtbil is called the kae bias Cut.
V-Icharasteristics in Revese Bias
(Rewerse Bias Characteaistics)
o l e s l elation
bolied to ttae pn junctian aad tthe Raere
unnnt ae tthe heverse bias chhacteristic
VValta)
Mitro
amrne
Santh
/Page No s K
Date
pet mall (aA) awd almat hemnaina enant
hith change u bias. St io callod y o e e s t t i o
cuett vey iplu. hese tias, tthe cwret udd
creares QhuA renene biasnttage m ne
DYNAMIC RESISTANCE e katio ot srma
hange w weltage (AV) to a small ahange
ItmA)
AI
Ac AV AT
V(ol5)
RECTIFIER
Reetiton.
altenndting cuntsltage inato dliuet cwrhout
AP-ntion diae cau be eseol a
aeetie
OHay cuae rectijie (BFtl waue
HALE WAVE RECTIFIER
Conatawetion (Cicuit Diagnam)
ap-njncthon dude Aes veth a lcd e'
|Date
oliode
X
WOAKING:
Whe am [Link] veltagemajohes
liesac ualtage acoss teainala Aand
whein the acvltaga at Ais lositiue, the ciade i
Rodeol biaseolaiolit conduts.
anditdoesnatcendct.
pecondaN, thene a Cunt thople loa
mobtaned
|Since the ructified sutput is othunsd endy
INPUT & ouTPUT WAYEFOAMS
tA
Ipput ac
Volfase
Page No
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FULL WAVE RECTIFIER
CoNSTRucTION (CIRCUIT DIAGAAM) :
tuo dicdes DË amdD, p-icsof the two ciodes ani
konnected to the emoa ot tle secondayof the tra
nstaamen. Ihe n-side of the diodes we conniciedl
togeaeh amd theoutputia obtained betwean the
fomnm poit of alides anolte Midpotof the
secondanyof ta tnanatoame (cenbial tay t the
peceuda4) througl akoadl resistot Ke.
AC Ceutu M
NA
ainang Ttap
KL OUTAUT
WORKING :wheuau a.c. intut altage abliec
Fdauyupie oescsd ac vatuge nero the tesni
CA andB.
heethe tap in ostie aud at ane imataut,
|the eltageat Bminegature.
So,cliode D,geta fosuid biaseol amd Candacta uhile
ttemce,oling hia ha cycle afac, a cureut lous
thrseahthe eircut die to diDde Dandsoa
lautut altaga sottaind acsthe Laod Jasistos
an aneten ha, cycle ofac, D nr e e biased
Auullau
/Page No
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bnot it oloes natcendust while Dai foawanol
biaseo anolit cemdata.
Duning itlhis negatie lall cuycle ofac acSS ALLONdag
s a c n e toue to oliode D,_ands,au
tthsne
putt caltage as aBtainad acness K
(lhs, a Gututmltages altaineo cing
bth th posttise asulas the negatine halt
eAae rectifen. WAVEFORMs.
INPU AND OUTPUT
uhtoD Duet P) DutoP2
ecti A Bame ds that of the ac Inft,
feell uaueAetfer is tuee that of t e
ác input
Alhe c w u e t ' pCyus
diode thsu uichtle