P8008HV

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

80V 80mΩ @VGS = 10V 4A

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 80
V
Gate-Source Voltage VGS ±25
TA = 25 °C 4
Continuous Drain Current ID
TA = 70 °C 3 A
1 IDM
Pulsed Drain Current 20
TA = 25 °C 1.9
Power Dissipation PD W
TA = 70 °C 1.2
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150
1
°C
Lead Temperature ( /16" from case for 10 sec.) TL 275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RqJA 65
°C / W
Junction-to-Lead RqJL 25
1
Pulse width limited by maximum junction temperature.

Ver 1.0 1 2012/4/16

P8008HV
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 80
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 2.0 3.0
Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA
VDS = 64V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 64V, VGS = 0V , TJ = 70 °C 10
On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V 20 A
Drain-Source On-State VGS = 4.5V, ID = 1A 70 90
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 3A 60 80
Forward Transconductance1 gfs VDS = 10V, ID = 4A 7.5 S
DYNAMIC
Input Capacitance Ciss 1165 1400
Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 104 pF
Reverse Transfer Capacitance Crss 57
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 1.8 Ω
2 Qg
Total Gate Charge (10V) 29.0
2 Qg
Total Gate Charge (4.5V) VDS = 0.5V(BR)DSS, VGS = 10V, 12.0
nC
Gate-Source Charge 2 Qgs ID = 4A 2.0
Gate-Drain Charge2 Qgd 6.8
2 td(on)
Turn-On Delay Time 6.0
2 tr
Rise Time VDS = 0.5V(BR)DSS, RL = 40Ω 3.8
nS
Turn-Off Delay Time 2 td(off) ID @ 4A, VGS = 10V, RG = 3.3Ω 21.0
Fall Time2 tf 5.0
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 4
3
A
Pulsed Current ISM 20
Forward Voltage1 VSD IF = 1A, VGS = 0V 1 1.3 V
Reverse Recovery Time trr 30 nS
IF = Is, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 40 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

Ver 1.0 2 2012/4/16

P8008HV
N-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/16

P8008HV
N-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/16

P8008HV
N-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/16

P8008HV
N-Channel Enhancement Mode MOSFET

Ver 1.0 6 2012/4/16