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Class 12 Semiconductor Electronics Test

This document is a test for Class 12 students on Semiconductor Electronics, consisting of multiple-choice questions, assertion-reason questions, short answer questions, a case study, and long answer questions. It covers fundamental concepts such as intrinsic and extrinsic semiconductors, diode behavior, and rectification. The test is structured into five sections with a total of 30 marks.

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3 views3 pages

Class 12 Semiconductor Electronics Test

This document is a test for Class 12 students on Semiconductor Electronics, consisting of multiple-choice questions, assertion-reason questions, short answer questions, a case study, and long answer questions. It covers fundamental concepts such as intrinsic and extrinsic semiconductors, diode behavior, and rectification. The test is structured into five sections with a total of 30 marks.

Uploaded by

gunrajsinghisbest
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

BYS CAREER ACADEMY

By Deepak Sir

CLASS 12 – SEMICONDUCTOR ELECTRONICS


TEST
Marks: 30

SECTION A – MCQ (1 × 5 = 5 marks)

1. In an intrinsic semiconductor, the number of electrons and holes are:

A. Equal B. Electrons > holes C. Holes > electrons D. Zero

2. The energy gap in a semiconductor is typically:

A. 1–3 eV B. 0 eV C. More than 5 eV D. Infinite

3. When a p-type semiconductor is formed, the majority carriers are:

A. Electrons B. Holes C. Protons D. Neutrons

4. A p–n junction offers low resistance in:

A. Reverse bias B. Forward bias C. At breakdown D. At zero bias

5. A diode used in rectification works on:

A. Amplification B. Modulation C. Unidirectional current flow D. Oscillation

SECTION B – Assertion–Reason (1 × 5 = 5 marks)

Choose:

A — Both A and R true, R explains A

B — Both true, R not explanation

C — A true, R false

D — A false, R true
6. A: A forward biased diode has very low resistance.

R: In forward bias, depletion layer width decreases.

7. A: In an n-type semiconductor, doping increases electrons.

R: Pentavalent impurities donate extra electrons.

8. A: Reverse bias increases barrier potential.

R: Majority carriers are pulled away from junction.

9. A: A zener diode acts as a voltage regulator.

R: It safely operates in breakdown region.

10. A: Silicon has higher band gap than germanium.

R: Silicon has lower intrinsic carrier concentration.

SECTION C – Short Answer (2 × 4 = 8 marks)

11. Define extrinsic semiconductor. Name its types.

12. What is depletion region? How is it formed?

13. Draw energy band diagrams for conductor, semiconductor, insulator.

14. State differences between forward and reverse bias.

SECTION D – Case Study (4 marks)

A student measured I–V characteristics of a diode. In forward bias, current stayed small until knee
voltage. In reverse bias, current stayed nearly constant. At high reverse voltage, breakdown
occurred.

15(a). Define knee voltage. Values for Si & Ge?

15(b). Why reverse current remains constant?


15(c). What happens in breakdown?

15(d). One application of reverse-biased diode.

SECTION E – Long Answer (8 marks)

16. (a) Explain half-wave rectifier with diagram and waveform.

(b) Derive rectified output; explain ripple.

(c) Give two advantages and two disadvantages.

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