Standard Power IXTH 8P50 VDSS = -500 V
IXTT 8P50 ID25 = -8 A
MOSFET
P-Channel Enhancement Mode RDS(on) = 1.2 Ω
Avalanche Rated
TO-247 (IXTH)
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C -500 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V
D (TAB)
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 25°C -8 A TO-268 (IXTT)
IDM TC = 25°C, pulse width limited by TJ -32 A
IAR TC = 25°C -8 A
EAR TC = 25°C 30 mJ G
S D (TAB)
PD TC = 25°C 180 W
TJ -55 ... +150 °C G = Gate, D = Drain,
TJM 150 °C S = Source, TAB = Drain
Tstg -55 ... +150 °C Features
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s • International standard packages
Plastic Body for 10s 250 °C
• Low R HDMOS process
DS (on)
TM
Md Mounting torque (TO-247) 1.13/10 Nm/[Link].
• Rugged polysilicon gate cell structure
Weight TO-247 6 g
TO-268 5 g • Unclamped Inductive Switching (UIS)
rated
• Low package inductance (<5 nH)
- easy to drive and to protect
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Applications
min. typ. max.
VDSS V GS = 0 V, ID = -250 µA -500 V • High side switching
BVDSS Temperature Coefficient 0.054 %/K • Push-pull amplifiers
VGS(th) V DS = VGS, ID = -250 µA -3.0 -5.0 V • DC choppers
VGS(th) Temperature Coefficient -0.122 %/K
• Automatic test equipment
IGSS V GS = ±20 VDC, VDS = 0 ±100 nA
IDSS V DS = 0.8 • VDSS TJ = 25°C -200 µA
V GS = 0 V TJ = 125°C -1 mA Advantages
RDS(on) V GS = -10 V, ID = 0.5 • ID25 7P50 1.5 Ω
• Easy to mount with 1 screw
8P50 1.2 Ω (isolated mounting screw hole)
RDS(on) Temperature Coefficient 0.6 %/K • Space savings
• High power density
© 2005 IXYS All rights reserved DS94534F(02/05)
IXTH 8P50
IXTT 8P50
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) TO-247 (IXTH) Outline
min. typ. max.
gfs V DS = -10 V; ID = ID25, pulse test 4 5 S
Ciss 3400 pF 1 2 3
Coss V GS = 0 V, VDS = -25 V, f = 1 MHz 450 pF
Crss 175 pF
td(on) 33 ns
tr V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 27 ns
td(off) RG = 4.7 Ω (External) 35 ns Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
tf 35 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
Qg(on) 130 nC
A 4.7 5.3 .185 .209
Qgs V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 32 nC A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
Qgd 64 nC b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
RthJC 0.7 K/W b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
RthCS (TO-247) 0.25 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
Source-Drain Diode Characteristic Values S 6.15 BSC 242 BSC
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max. TO-268 (IXTT) Outline
IS VGS = 0 -8 A
ISM Repetitive; pulse width limited by TJM -32 A
VSD IF = IS, VGS = 0 V, -3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr IF = IS, di/dt = 100 A/µs 400 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
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