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PN-Junction and UJT Calculations Guide

The document contains a series of questions related to electronics, specifically focusing on semiconductor physics and devices such as PN-junctions, UJTs, and FETs. It includes calculations for doping concentrations, depletion region widths, barrier potentials, UJT currents, and drain currents in FETs. Each question provides specific parameters and conditions for the calculations required.

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4 views1 page

PN-Junction and UJT Calculations Guide

The document contains a series of questions related to electronics, specifically focusing on semiconductor physics and devices such as PN-junctions, UJTs, and FETs. It includes calculations for doping concentrations, depletion region widths, barrier potentials, UJT currents, and drain currents in FETs. Each question provides specific parameters and conditions for the calculations required.

Uploaded by

akshitgupta2707
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Electronics: PH-DSC4103

Tutorial-7 (October 2025)

Question-1: In a p-type germanium at room temperature, calculate the doping


concentration at which the Fermi level (EF) coincides with the edge of the valance band.
Assum 𝑚∗ = 0.4𝑚 . What happens when NA>NC? In this case, for a PN-junction with
reverse bias VR = 3V and the cross-section area of the junction 𝐴 = 5 × 10 𝑐𝑚 ,
calculate the junction capacitance.

Question-2: Calculate the total width of the depletion region (in p-side (wp) and n-side
(wn)) of a PN-junction when (i) a forward bias of 0.8V and (ii) a reverse bias of 10V is
applied and fine E0 . Take 𝑁 = 10 /𝑚 , 𝑁 = 10 /𝑚 , 𝑛 = 1.5 × 10 /𝑐𝑚 .

Question-3: Calculate the barrier potential in which doping on p- and n-side are
10 /𝑚 , and 10 /𝑚 respectively. The intrinsic carrier density is 𝑛 = 1.4 × 10 /𝑚 .
What happens when the doping on both sides is increased by a factor of 10?

Question-4: In an UJT the interbase resistance is 10 kΩ. If RB1 is 6 kΩ with IE = 0, then find:

(a) UJT current if VBB is 20 V (<VP).


(b) η and VA
(c) peak point voltage

Question-5: Find the value of VGS required for a drain current ID of 5 mA. Assume IDSS = 8
mA and VP = -4V.

Question-6: In a n-channel FET, find the values of ID, gmo and gm. Given IDSS = 10 mA and
VP = -4V and VGS = -1V.

Question-7: In a p-n-p-n diode the gain of the p-n-p transistor is α1 = 0.4, while for n-p-n
transistor the gain is α2 = 0.5. If the gate current is 50 mA, calculate the anode current of
the diode.

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