MJD122 and MJD127 Darlington Transistors
MJD122 and MJD127 Darlington Transistors
MJD127
Features
■ Low collector-emitter saturation voltage
■ Integrated antiparallel collector-emitter diode
Applications
3
■ General purpose linear and switching 1
Description
DPAK
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
Figure 1. Internal schematic diagrams
performance coupled with very low saturation
voltage.
Content
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
1 Electrical ratings
Note: For PNP types voltage and current values are negative.
2 Electrical characteristics
Collector-emitter
VCEO(sus) (1) sustaining voltage (I = 0) IC = 30 mA 100 - V
B
VCE(sat)(1) Collector-emitter IC = 4 A _ IB = 16 mA 2 V
-
saturation voltage IC = 8 A _ IB = 80 mA 4 V
Base-emitter saturation
VBE(sat)(1) IC = 8 A _ IB = 80 mA - 4.5 V
voltage
Note: For PNP types voltage and current values are negative.
Figure 4. DC current gain for NPN type Figure 5. DC current gain for PNP type
AM00696v1 AM00697v1
hFE hFE
1000 1000
VCE= 3 V VCE= -3 V
10 10
0.01 0.1 1 Ic(A) -0.01 -0.1 -1 Ic(A)
1 -1
0.2 -0.2
0.1 1 Ic(A) -0.1 -1 Ic(A)
Figure 8. Base-emitter saturation voltage for Figure 9. Base-emitter saturation voltage for
NPN type PNP type
AM00700v1 AM03261v1
VBE(sat) VBE(sat)
(V) (V)
1.5 -1.5
0.5 -0.5
0.1 1 Ic(A) -0.1 -1 Ic(A)
Figure 10. Base-emitter on voltage for NPN Figure 11. Base-emitter on voltage for PNP
type type
AM03262v1 AM03263v1
VBE(on) VBE(on)
(V) (V)
VCE= 3 V
VCE= -3 V
2.0 -2.0
1.5 -1.5
0.5 -0.5
0.1 1 Ic(A) - 0.1 -1 Ic(A)
Figure 12. Resistive load switching times for Figure 13. Resistive load switching times for
NPN type (on) PNP type (on)
AM03264v1 AM03265v1
t(ns) t(ns)
Vcc= 30 V Vcc= -30 V
hFE=250 hFE=250
Vbeoff= - 5 V Vbeoff= 5 V
Ibon= - Iboff -Ibon= Iboff
100 100
10 10
0 1 2 3 4 5 Ic(A) 0 -1 -2 -3 -4 -5 Ic(A)
Figure 14. Resistive load switching times for Figure 15. Resistive load switching times for
NPN type (off) PNP type (off)
AM03266v1 AM03267v1
t(ns) t(ns)
Vcc= -30 V
hFE=250
Vbeoff= 5 V
-Ibon= Iboff
Vcc= 30 V
hFE=250
1000 Vbeoff= - 5 V 1000
Ibon= - Iboff
100 100
0 1 2 3 4 5 Ic(A) 0 -1 -2 -3 -4 -5 Ic(A)
Figure 16. Capacitances for NPN type Figure 17. Capacitances for PNP type
AM03269v1 AM03268v1
C(pF) C(pF)
F= 0.1 MHz F= 0.1 MHz
CCB CCB
100 100
CEB CEB
10 10
0.01 0.1 1 10 VR(V) 0.01 0.1 1 10 VR(V)
3 Test circuits
mm.
DIM.
min. typ max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e 2.28
e1 4.40 4.60
H 9.35 10.10
L 1
L1 2.80
L2 0.80
L4 0.60 1
R 0.20
V2 0o 8o
0068772_G
5 Revision history
01-Aug-2002 8
01-Oct-2007 9 Collector current limits have been improved
03-Oct-2007 10 Package mechanical data updated
The device MJD127 has been inserted
21-Apr-2009 11
Section 2.1: Electrical characteristics (curves) has been updated
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