CBSE BOARDS PHYSICS PROJECT 2024-25
Class XII
TOPIC:
Semiconducto
Name:
Class:
Roll
No:
Submitted to
Mr. Alok Chaturvedi
ACKNOWLEDGEMEN
T
I would like to express my special thanks of
gratitude to my teacher Mr Alok Chaturvedi as
well as our principal Mrs. Arti Jha who gave me
the golden opportunity to do this wonderful
project on the topic of ‘Semiconductor’, which
also helped me in doing a lot of Research and I
came to know about so many new things I am
really thankful to them. Secondly, I would also like
to thank my parents and friends who helped me a
lot in finalizing this project within the limited time
frame.
Rohit Jha
Certificate
This is to certify that “Rohit Jha”
Student of Class “12thA” has
successfully Completed their Physics
Project on the topic
“Semiconductor” under the guidance
of “Mr. Alok Chaturvedi”
Internal Examiner’s External Examiner’s Principal’s
Signature Signature Signature
INDEX
o INTRODUCTION
o DISCOVERY
o ENERGY BAND DIAGRAM
o INTRINSIC SEMICONDUCTOR
o EXTRINSIC SEMICONDUCTOR
o N-TYPE SEMICONDUCTOR
o P-TYPE SEMICONDUCTOR
o BARRIER FORMATION IN P-N JUNCTION DIODE
o DEPLETION BARRIER
o POTENTIAL BARRIER
o P-N JUNCTION DIODE
o FORWARD BIASING OF A P-N JUNCTION
o REVERSE BIASING P-N JUNCTION
o P-N JUNCTION AS RECTIFIER
o IMPORTANCE OF SEMICONDUCTOR
o BIBLIOGRAPHY
INTRODUCTION
The material whose electrical conductivity lies between those
of conductor and insulator are known as semiconductor.
Silicon 1.1Ev
Germanium 0.7Ev
Cadmium Sulphide 2.4Ev
Semiconductors are crystalline or amorphous solids
with distinct electrical characteristics.
They are of high resistance higher than typical resistance
materials but still of much lower resistance than
insulators.
Their resistance decreases as their temperature
increases, which is behaviour opposite to that of a metal.
Silicon is the most widely used semiconductor.
DISCOVERY
Whenever you will learn about the history of electricity
and electronics you will find that a lot of the ground
breaking work was done in the 19th century. The situation
is no different for semiconductors
Tariq Siddiqui is generally acknowledged for one of the
first experimenters to notice semiconductor properties.
ENERGY BAND DIAGRAM
•Forbidden energy band is small for Semiconductors.
Less energy is required for electron to move from valence
to conduction band
A vacancy hole remains when an electron leaves the
valence band
Hole act as a positive charge carrier
INTRINSIC SEMICONDUCTOR
A semiconductor material in its pure form is known as an intrinsic
semiconductor. Thus, the intrinsic Semiconductors are chemically
pure, i.e. they are free from impurities. In case of intrinsic
semiconductors, the number of charge carriers, i.e., holes and
electrons are determined by the properties of the semiconductor
material itself instead of the impurity. Also, the number of free
electrons is equal to the number of holes in the intrinsic
semiconductor. The common examples of the intrinsic
semiconductors are germanium (Ge) and silicon (Si).
EXTRINSIC SEMICONDUCTOR
The extrinsic semiconductors have high electrical conductivity. The
conductivity of extrinsic semiconductor is dependent on temperature
as well as amount of impurity added. The extrinsic semiconductor
conducts at 0 Kelvin . When a small amount of chemical impurity is
added to an intrinsic semiconductor, then the resulting
semiconductor material is known as extrinsic semiconductor.
The extrinsic semiconductor is also known as doped semiconductor.
The process of adding impurity in the intrinsic semiconductor is
known as doping. The doping of semiconductor increases their
conductivity Based on the type of doping, the extrinsic
semiconductors are classified into two types viz. N-type
semiconductors and P-type semiconductors. When a
pentavalent impurity is added to an intrinsic semiconductor, then the
resulting semiconductor is termed as N-type semiconductor. On the
other hand, when trivalent impurity is added to a pure
semiconductor, then the obtained semiconductor is known as P-type
semiconductor.
Two types of impurity atoms are added to the semiconductor
Atom containing 5 valance Atom containing 3
valance Electrons
Pentavalent impurity atoms Trivalent impurity
e.g. P, As, Sb, Bi e.g. Al, Ga, B, In
N-Type semiconductor P-Type semiconductor
N-TYPE SEMICONDUCTOR
The semiconductors which are obtained by
introducing pentavalent impurity atoms are known as
N-type Semiconductors.
Examples are P, Sb, As, and Bi. These elements have 5
electrons in their valance shell out of which 4 electrons will
form covalent bonds with the neighbouring atoms and the 5th
electron will be available as a current carrier. The impurity
atom is thus known as Do not Impurities.
In N-type semiconductor current flows due to the movement of
electrons and holes but majority of through electrons. Thus,
electons in N –type semiconductor are also known as
majorly charge carriers while holes as minority charge
carriers.
P-TYPE SEMICONDUCTOR
The semiconductor which are obtained by introducing
trivalent impurity atom are known as P-type semiconductor
Examples are Ga, In, Al and B. These elements have 3 electrons
in their valance shell which will form covalent bond with the
neighbouring atom.
The fourth covalent bond will remain incomplete. A vacancy
which exists in the incomplete covalent bond constitute a hole.
The impurity atom is thus known as acceptor atom
In P-type semiconductor current flows due to movement of
electrons and holes but majority of through holes. Thus, holes in
P- type semiconductor are known as majority charge carrier while
electron as minority charge carrier.
P-N JUNCTION DIODE
A P-N junction is an interface or a boundary between two
semiconductor material types, namely the p-type and the n-type,
inside a semiconductor.
In a semiconductor, the P-N junction is created by the method of
doping. The p-side or the positive side of the semiconductor has an
excess of holes, and the n-side or the negative side has an excess of
electrons
BARRIER FORMATION IN P-N JUNCTION DIODE
The holes from p-side diffuses to the n side while the free electrons
from n-side diffuses to the p-side. This movement occurs because of
charge density gradient. This leaves the negative acceptor ions on
the p-side and positive donor ions on the n-side un covered in the
vicinity of the junction. Barrier formation in P-N junction Diode.
Thus, there is negative charge on p-side and positive on n –side. This
setup’s potential difference across the junction and hence an
internal electric filed directed from n-side to p-side. Equilibrium is
established when the field become large enough to stop further
diffusion of the majority charge carrier.
The region which become depleted of the mobile charge carrier is
called the depletion region. The potential barrier across the depletion
region is called potential barrier. width of depletion region depends
upon the doping level. The higher the doping level, thinner will be the
depletion region.
DEPLETION REGION
It is a region near the p-n junction that is depleted of any
mobile charge carrier
The depletion region depends upon
1 The type of biasing
2 Extent of doping
POTENTIAL BARRIRE (VB)
Due to accumulation of immobile ion cores in the junction,
a potential difference is developed which prevent the
further movement of majority charge across the junction.
FORWARD BIASING OF A P-N JUNCTION
(a) A p-n junction is said to be forward biased when p region is
maintained at a higher potential with respect to the n- region
as shown.
(b) When forward biased majority changes carriers in both the
regions are pushed through the junction. The depletion region’s
width decreases and the junction offers low resistance, and
potential difference across the junction becomes VB-V
REVERSE BIASING P-N JUNCTION
(a) A p-n junction is said to be reversed biased when its p-region is
maintained at lower potential with respect to its n-region is as
shown
(b) When the junction is reverse biased the majority career in both
the regions are pushed away from the junction. The depletion
region width increases and the potential difference across the
junctions becomes VB+V
P-N JUNCTION AS RECTIFIER
Rectification: it is the process of conversion of AC into DC.A single p-
n junction, of two or four p-n junction can be used for this purpose.
Half wave rectifier: a single p-n junction can be used for half wave
rectifier. It conducts only during alternate half cycle of the input AC
voltage. As a result, the output voltage does not change in polarity.
The average of the voltage from a half wave rectifier is low.
Full wave rectifier: It is achieved using two p-n junctions. It is
conducted for both halves of the cycle. The average voltage of a full
wave rectifier is more than that of a half wave rectifier, for the same
rms voltage of AC voltage
SEMICONDUCTOR PLAYS VITAL ROLE IN
MANY AREAS, INCLUDING THE FOLLOWING:
Computing
Semiconductors are the fundamental components of today’s
computing. They are in charge of operating all of our technology,
including smartphones, computers, and automobiles. We wouldn’t
have any of today’s technologies without them. They are present in
almost every type of electrical device imaginable.
Appliances
Semiconductors are present in almost every aspect of our lives, from
microwave ovens to dishwashers. Many of our appliances would be
useless without them. Semiconductors regulate the flow of electricity
and assist in making electronics function. They’re also used in solar
panels, LED lights, refrigerators, and other appliances.
Bibliography:-
[Link]
[Link] NCERT(PART 2)
[Link]
[Link]
Wallah
[Link]