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Superposition and Diode Characteristics Lab

The document outlines a laboratory experiment conducted at Akenten Appiah-Menka University focusing on the effect of superposition in electrical circuits, including procedures, results, and theoretical background. It details tests involving various electrical components, such as resistors and diodes, and includes measurements of current and voltage to confirm the superposition theorem. Additionally, it describes the characteristics of Zener and semiconductor diodes using oscilloscope readings and measurement tables.

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0% found this document useful (0 votes)
5 views11 pages

Superposition and Diode Characteristics Lab

The document outlines a laboratory experiment conducted at Akenten Appiah-Menka University focusing on the effect of superposition in electrical circuits, including procedures, results, and theoretical background. It details tests involving various electrical components, such as resistors and diodes, and includes measurements of current and voltage to confirm the superposition theorem. Additionally, it describes the characteristics of Zener and semiconductor diodes using oscilloscope readings and measurement tables.

Uploaded by

larbicaleb111
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd

AKENTEN APPIAH-MENKA UNIVERSITY OF SKILLS TRAINING AND

ENTREPRENEURIAL DEVELOPMENT, KUMASI


DEPARTMENT OF ELECTRICALS

AND ELECTRONICS ENGINEERING


[Link]. ELECTRICALS AND ELECTRONICS ENGINEERING TECHNOLOGY WITH
EDUCATION
FACULTY OF TECHNICAL AND VOCATIONAL EDUCATION

COURSE TITLE: ELECTRONICS AND TELECOMMUNICATION LAB


TECHNICIAN: Mr. Francis Amoah
LEVEL: 100 B1 (WORKSTATION…….. …..)

NAME INDEX NUMBER SIGNATURE


CALEB KWANENA LARBI 5241900102
TITLE

Effect of superposition

SUBJECT MATTER

To experimentally check the theorem of the effect superposition

THEORY

The current flowing through any branch of a linear electric network and due to the
presence of ‘n’ active elements can be considered to be equal to the algebraic sum of
the single currents flowing through that same branch and due to the active elements
when they’re operating one at a time. When a single active element is operating, all
the others must be made passive; the voltage sources must be short-circuited (null
e.m.f.). In this case the internal resistances of all the sources remain unchanged and
are always present in the network.

TEST 1

EQUIPMENTS

V= tester used as voltmeter


A= tester used as ammeter
R₁= resistance 120 Ω, 5 W
R₂= resistance 330 Ω, 5 W
R₃= resistance 220 Ω, 5 W
E₁= POWER SUPPLY UNIT
E₂= 2 batteries rated 1.5 V in series
JA= circuit breaker

PROCEDURE
1. Connect the power supply unit to the mains
2. Check that the variation knob is in the counter clockwise position.
3. Realize the following circuit
A

4. Select the supply voltage shown in the wiring diagram, switch on the power
supply unit and clockwise rotate the knob until the voltmeter displays 24 V.

NOTE: This adjustment must be performed under no-load, i.e. with power supply unit
disconnected from the circuit

5. Connect the power supply unit to the circuit and close the circuit breaker JA:
measure the current I₂. Note that the ammeter displays the right sense of the
current I₂.

6. Open both the circuit breaker JA and the power supply.

RESULTS

I₂= 0.05A
TEST 2

PROCEDURE

1. Operate only the source E₁, realizing the following circuit.

2. Switch the source E₁ on and close the circuit breaker JA.

3. Measure the current I₂ and compare it against the theoretical value.

4. Open both circuit breaker JA and the supply unit switch.

RESULTS

I₂’= 0.038

TEST 3
PROCEDURE

 Operate only the source E₂, realizing the following circuit.

 Close the circuit breaker JA and measure the current I₂’’.

 Compare it against the theoretical value

 Check that the sum of the measured currents I₂’+I₂’’ is approximately equal to
the measured current I₂, therefore confirming the theorem of effect
superposition.

RESULTS

I₂’’= 0.004

SUBJECT
DIODE (Zener diode)

OBJECTIVE/PURPOSE

Measure point-by-point the characteristics of a Zener diode and to display it with an


oscilloscope.

MATERIALS/ APPARATUS

D₁ = Diode 1N4007
D₂ = Zener diode 6.8 V, 0.4W, 5%
R₁ = Resistance 100 Ω
R₂ = Resistance 220 Ω
R₃ = Resistance 330 Ω
Iz = d.c ammeter 50mA f.s
Vz = d.c voltmeter 10 V f.s
E = Stabilized power supply unit 0÷10 V, 50 mA
e = Sinusoidal generator 10 V, 50(60) Hz, 1 A
Oscilloscope

THEORY/ BACKGROUND

When a common diode is reversely biased, it is subject to the breakdown, I.e. to the
avalanche effect: in this situation the component is damaged; moreover, the
breakdown voltage isn’t defined.

On the contrary, the Zener diode is specifically used in these conditions, showing the
Zener (breakdown) effect at a well determined voltage. On the other hand, when the
Zener diode is directly biased, it behaves like a common diode.

CIRCUIT DIAGRAM
Iz
Vz

PROCEDURE

1. Wire the circuit shown in Fig. A

2. Adjust the output voltage of the stabilized power supply unit E until the ammeter
Iz displays 1 mA. Read the associated voltage Vz and note both values in the
measurement table of Fig. 7.

3. Repeat the operations of the previous point for each value of Iz indicated in the
measurement table.

4. Unwire the circuit

5. Using the collected data draw the characteristic curve of the Zener under test

6. Wire the circuit shown in Fig. B

7. Set the oscilloscope: Y = 1 V/cm and X = 1 V/cm after the time base has been
disconnected (mode XY)

8. Set e = 10 V, 50 (60) Hz: on the oscilloscope the characteristic curve of the Zener
diode under test has to draw itself.

Due to the sign of voltages reaching the X and Y axes, the characteristic curve will be
displayed in the second and fourth quadrants; if the oscilloscope is provided of the "Y
axis inverter" control, it is possible to turn the characteristic over in the third and first
quadrants.
9. Measure the most important points on the characteristic curve

OBSERVATIONS/ DATA

Measurement Table

Iz (mA) Vz (V) NOTE

1 6.88

2 6.94

3 7.93

4 7.95

5 7.97

7 7.99

10 8.03

15 8.07

20 8.12

25 8.17
SUBJECT

Semiconductor diode

OBJECTIVE/PURPOSE

Detect the characteristics of a semiconductor diode through the V - A method and


display this characteristic on the oscilloscope.

MATERIALS/ APPARATUS

R₁ = Resistance 15 Ω, 15 W
R₂ = Resistance 1 kΩ
D₁ = Silicon Diode 1N4007
D₂ = Silicon Diode 1N4007
E = Regulated power supply 0÷ 10 V, 0.3 A
e = Sine generator 10 V, 50 (60) Hz, 1 A
Id = d.c ammeter 1 A max
Vd = d.c voltmeter 20000 Ω/V, 1 V f.s or electronic digital voltmeter
Oscilloscope

THEORY/ BACKGROUND

The semiconductor diode is made up of two pieces of silicon or of germanium; one of


the pieces is of type N (with an abundance of electrons) and the other is of type P
(with a lack of electrons). The area where you find the intimate union of the two
pieces is called JUNCTION.

In the area of the junction a POTENTIAL BARRIER is created, that in practice, doesn’t
allow the passage of electrons from piece (or area) N to piece (or area) P.

In order to obtain the passage of electrons you have to eliminate this potential
barrier. This can be obtained through an electromotive force that gives a positive
polarity to area P, which is called ANODE, with respect to area N which, in its turn, is
called CATHODE .

CIRCUIT DIAGRAM

Id

Vd

PROCEDURE

1. Assemble the circuit in Fig. A and set the power supply .

2. Adjust until and read the corresponding ; record this value in the table of Fig. 8.

3. Repeat step 2 for all the values of shown in the table of Fig. 8.

4. Disassemble the circuit.

5. Using the data collected in the table, plot the characteristic curve of the diode
under test.

6. Assemble the circuit of Fig. 8.

7. Set the oscilloscope to:

Y = 2 V/cm

X = 0.2 V/cm

Do so after disconnecting the time basis of the oscilloscope (set XY mode).

8. Set e= 10 V, 50(60) Hz: on the oscilloscope, you will have to see the characteristic
of the diode concerned. The characteristic will be drawn, since the sign of the
voltages reaching the X and Y axis in the 4th quadrant; if the oscilloscope is
equipped with the command “Y-axis inverter”, the characteristic can be moved to 1st
quadrant.

9. Identify the most important features of the diode’s characteristic.

10. Disassemble the circuit.

OBSERVATIONS/ DATA

Id (mA) Vd (V)

1 0.59

2 0.62

5 0.66

10 0.69

15 0.71

20 0.72

40 0.75

60 0.77

80 0.78

100 0.79

150 0.81

200 0.82

250 0.83

300 0.84

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