Question Bank
Unit-1
Q.1 What is interference? Describe the concept of division of
amplitude and
division of wavefront.
Q.2 Explain the phenomenon of interference in thin film and obtain
conditions
for maximum and minimum.
Q.3 Discuss the application of thin film interference to find thickness
of thin
film.
Q.4 What is diffraction grating? How can it be used to determine
wavelength of light?
Q.5 Explain construction and theory of diffraction grating.
Q.6 Define resolving power of grating and derive expression for it.
Q.7 Show that resolving power of grating depends on order of
spectrum.
Q.8 Explain the terms polarization, plane of polarization and plane of
vibration.
Q.9 Distinguish between polarized and unpolarized light.
Q.10 State and explain law of Malus.
Q.11 Discuss phenomenon of double refraction.
Q.12 Explain the phenomenon of interference in wedge shaped (or
variable thickness) thin film and obtain conditions for maximum and
minimum. Also show the fringe width is inversely proportional to
angle of film.
Q.13 What is optical activity? Explain the rotation of plane of
polarization by
Fresnel’s theory.
Q.14 Explain in detail construction and working of Laurent’s half
shade
polarimeter.
Q.15 Give different applications of polarized light.
Q.16 What is electrooptic effect? Discuss the concepts of Kerr effect
and Pockel effect.
Unit 2
Q.1 Explain the terms
i) Spontaneous emission
ii) Stimulated emission
iii) Population inversion
iv)Pumping
v)Active system
Q.2 What is population inversion? Why is it necessary for lasing
action?
Q.3 Give brief account of optical pumping.
Q.4 Describe with diagram construction and working of ruby laser.
Q.5 State different characteristics of laser.
Q.6 Give scientific, industrial and medical applications of laser.
Q.7 What is holography? Explain with illustration recording of
hologram and
reconstruction of image.
Q.8 State and explain principle used in optical fibre.
Q.9 Explain in brief principle and structure of optical fibre and fibre
optics
cable.
Q.10 Define acceptance angle and state expression for it.
Q.11 Write expression for numerical aperture and state its
significance.
Q.12 Write short note on:
i) Classification of optical fibre
ii) Optical fibre as sensor
Q.13 Give different applications of optical fibre.
Q.14 What are advantages of optical fibre?
Unit 3
Q.1. Derive Maxwell’s first equation from Gauss law.
Q.2. Using Biot – Savart law, obtain expression for magnetic field
produced by long thin current carrying conductor.
Q.3. Explain the Maxwell’s concept of displacement current.
Q.4. Derive Maxwell’s second equation.
Q.5. Derive Maxwell’s third equation from Faraday’s law of
electromagnetic induction.
Q.6. What is physical significance of Maxwell’s second equation.
Q.7. Derive Maxwells’ fourth equation.
Q.8. Write Maxwell’s electromagnetic equations and their physical
significance.
Q.9. Show that light is electromagnetic wave in nature from Maxwell’s
equations.
Q.10. Deduce expression for velocity of propagation of plane
electromagnetic wave in a medium with permittivity ε and permeability µ.
Q.11. Write boundary conditions for electric and magnetic fields.
Q.12. Obtain law of refraction for the electric field at the interface
between two dielectrics.
Q.13. Obtain law of refraction for the magnetic field at the interface
between two media.
Q.14. Define Poynting vector. Derive expression for it and explain its
physical significance for electromagnetic wave in free space.
Q. 15 State and prove Faraday’s law.
Q. 16. State and explain Ampere’s law.
Q.17. State and prove 3rd and 4th Maxwell’s equations.
Q. 18 State and Prove Maxwell’s first and second law.
Q.19 Prove that velocity of light is 3x10-8 m/s in vacuum.
Q. 20. Derive boundary conditions for electric and magnetic fields for
dielectric- dielectric interface.
Q.21. Show that light is transverse wave using Maxwell’s equations.
Unit- 4
Q.1 State the de Broglie's hypothesis of matter wave. Derive an
expression for
wavelength of matter wave in terms of kinetic energy of particle.
Q.2 Give different properties of matter wave.
Q.3 State and explain Heisenberg's uncertainty principle.
Q.4 Elaborate applications of Heisenberg’s uncertainty principle.
Q.5 ‘If an electron is localized in space, its momentum becomes
uncertain.’
Explain this statement.
Q.6 Define a wave function. Show that it represents probability density of
finding the particle at a given position and given time.
Q.7 Explain the concept of wave function and give its physical
significance.
Q.8 Derive Schrodinger’s time dependent wave equation.
Q.9 Derive Schrodinger’s time independent wave equation.
Q.10 Apply the Schrodinger’s time independent equation for a particle
confined
to a rigid box and find its energy levels..
Q.11 Show that the energy of electron confined in one dimensional
potential
well of length L and infinite depth is quantized. Is the electron
trapped in
infinite potential well allowed to take zero value? Elaborate the
answer.
Q.12 Show that the energy of particle confined in one dimensional
potential
well of length L is given by
2 2
n h
En = 2
8mL
Q.13. Explain the concepts – Superposition of states, quantum
entanglement
Q.14. State applications of quantum mechanics in different fileds.
Unit 5
Q.1 Explain formation of bands in solid. Define valence band, conduction
band
and forbidden gap.
Q.2 Define valence band, conduction and forbidden gap. Explain
classification
of solids on the basis of band theory.
Q.3 Define Fermi level in semiconductor and derive expression for Fermi
energy in intrinsic semiconductor.
Q.4 Draw neat sketch of energy band diagram and show that Fermi level
in
intrinsic semiconductor lies at the centre of energy gap.
Q.5 What is effect of temperature on position of Fermi level in extrinsic
semiconductor? Illustrate with suitable diagram.
Q.6 What is effect of temperature on Fermi level in intrinsic
semiconductor.
Q.7 Discuss the effect of impurity concentration on Fermi level in n – type
semiconductor.
Q.8 Show that Fermi level drops with increasing amount of dopant in p-
type semiconductor.
Q.9 Draw energy band diagram at 0 K for
i) Intrinsic semiconductor
ii) P- and n-type semiconductor
Q.10 What is law of mass action? Show that np = ni2 where symbols have
their
usual meaning.
Q.11 Derive the expression for fraction of electrons in conduction band.
Q.12 What is Hall effect? Derive expression for Hall coefficient.
Q. 13 State and explain Bloch function.
Q.14 Describe motion of electron in periodic potential using Kronig-Penny
model.
Q. 15. Explain formation of forbidden energy gap using Kronig-Penny
model.
Unit- 6
Q.1 Write a note on formation of p-n junction and obtain equation for
junction potential.
Q.2. Show that diffusion current and drift current are equal and opposite
in unbiased p-n junction.
Q.3. Explain the effect of reverse bias in p-n junction and derive equation
for total current.
Q.4. Explain the effect of forward bias in p-n junction and derive equation
for total current.
Q.5. Derive diode equation and rectifier equation in p-n junction.
Q.6. Explain construction and working of Solar Cell.
Q.7. Describe construction of JFET and explain I-V characteristics.
[Link] construction of MOSFET and its I-V characteristics with neat
diagrams.
Q.9. Write note on CMOS.