Class 12th Semiconductor Physics Test
(NEET/CBSE/NCERT Exemplar Level)
Instructions
This test consists of 20 multiple-choice questions at the difficulty level of NEET, CBSE Board
previous year papers, and NCERT Exemplar. Each question has four options (A, B, C, D). Select
the correct option. All questions carry equal marks. Questions are compiled and adapted from
authentic sources for conceptual depth and application.
Section 1: Energy Bands, Intrinsic & Extrinsic Semiconductors (Ques-
tions 1-6)
1. In an intrinsic semiconductor, the ratio of the number of holes to the number of conduction
electrons is:
A) Greater than 1
B) Less than 1
C) Equal to 1
D) Zero
Correct Answer: C (Vedantu/CBSE Level)
2. The conductivity of a semiconductor increases with increase in temperature because:
A) Number density of free current carriers increases
B) Relaxation time increases
C) Both number density of carriers and relaxation time increase
D) Number density of current carriers increases, relaxation time decreases but the effect
of a decrease in relaxation time is much less than the increase in number density
Correct Answer: D (NCERT Exemplar MCQ I)
3. What type of impurity is added to obtain an n-type semiconductor?
A) Trivalent atoms like Indium
B) Pentavalent atoms like Phosphorus
C) Divalent atoms like Carbon
D) Hexavalent atoms like Sulfur
Correct Answer: B (Vedantu/CBSE Level)
4. Doping of silicon with which impurity leads to a p-type semiconductor?
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A) Arsenic
B) Phosphorus
C) Indium
D) Antimony
Correct Answer: C (Vedantu/CBSE Level; NEET PYQ Adaptation)
5. A p-type extrinsic semiconductor is obtained when Germanium is doped with:
A) Antimony
B) Arsenic
C) Indium
D) Phosphorus
Correct Answer: C (NEET 2023)
6. Hole is:
A) An anti-particle of the electron
B) A vacancy created when an electron leaves a covalent bond
C) Absence of free electrons
D) An artificially created particle
Correct Answer: B (NCERT Exemplar MCQ I)
Section 2: Doping, Carrier Concentration, Mobility & Ionization En-
ergy (Questions 7-10)
7. A semiconductor has equal electron and hole concentration. After doping with a certain
impurity, the electron concentration increases significantly. This results in:
A) P-type semiconductor
B) N-type semiconductor
C) Intrinsic semiconductor
D) Superconductor
Correct Answer: B (Vedantu/CBSE Level)
8. In an n-type silicon:
A) Electrons are minority carriers and trivalent atoms are dopants
B) Electrons are majority carriers and pentavalent atoms are dopants
C) Holes are majority carriers and trivalent atoms are dopants
D) Holes are minority carriers and pentavalent atoms are dopants
Correct Answer: B (Vedantu/CBSE Level)
9. For p-type semiconductors:
A) Electrons are majority carriers and pentavalent atoms are dopants
B) Holes are majority carriers and trivalent atoms are dopants
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C) Electrons are minority carriers and trivalent atoms are dopants
D) Holes are minority carriers and pentavalent atoms are dopants
Correct Answer: B (Vedantu/CBSE Level)
10. When an electric field is applied across a semiconductor:
A) Electrons move from lower energy level to higher energy level in the conduction band
B) Electrons move from higher energy level to lower energy level in the conduction band
C) Holes in the valence band move from higher energy level to lower energy level
D) Holes in the valence band move from lower energy level to higher energy level
Correct Answer: C (NCERT Exemplar MCQ II)
Section 3: PN Junction Diode, Depletion Layer & Potential Barrier
(Questions 11-14)
11. The width of the depletion layer in a p-n junction diode:
A) Increases with forward bias
B) Decreases with reverse bias
C) Increases with reverse bias
D) Remains constant with biasing
Correct Answer: C (Vedantu/CBSE Level)
12. In the depletion region of a diode:
A) There are no mobile charges
B) Equal number of holes and electrons exist, making the region neutral
C) Recombination of holes and electrons has taken place
D) Immobile charged ions exist
Correct Answer: D (NCERT Exemplar MCQ II)
13. Under what condition does a junction diode work as an open switch?
A) Forward bias
B) Reverse bias
C) Zero bias
D) High forward bias
Correct Answer: B (Vedantu/CBSE Level)
14. Which type of biasing gives a semiconductor diode very high resistance?
A) Forward biasing
B) Reverse biasing
C) Zero biasing
D) Both forward and reverse
Correct Answer: B (Vedantu/CBSE Level)
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Section 4: Biasing Characteristics & Rectifiers (Questions 15-20)
15. The I-V characteristics shown for a semiconductor device (typical reverse bias breakdown
curve) are exhibited by a:
A) Zener diode
B) LED
C) Photodiode
D) Solar cell
Correct Answer: A (NEET 2024 Re-exam)
16. In the circuit shown, if the diode forward voltage drop is 0.3 V, the voltage difference be-
tween A and B is (assuming ideal conditions for rectifier analysis):
A) 1.3 V
B) 2.3 V
C) 0 V
D) 0.5 V
Correct Answer: D (NCERT Exemplar MCQ I; Adapted)
17. A full wave rectifier circuit with diodes (D1 and D2) is shown. If input supply voltage Vin =
220 sin(100πt) volt, then at t = 15 msec (π/2 phase):
A) Vin = 0
B) Vin = 220 V
C) Vin = 110 V
D) Vin = −220 V
Correct Answer: A (NEET 2025; Output analysis)
18. The breakdown in a reverse-biased p-n junction diode is more likely to occur due to:
A) Large velocity of the minority charge carriers if the doping concentration is small
B) Large velocity of the minority charge carriers if the doping concentration is large
C) Strong electric field in a depletion region if the doping concentration is small
D) Strong electric field in the depletion region if the doping concentration is large
Correct Answer: D (NCERT Exemplar MCQ II)
19. Consider the following statements A and B:
A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured in (µA), is due to ma-
jority charge carriers.
A) Both A and B are correct
B) Both A and B are incorrect
C) A is correct, B is incorrect
D) A is incorrect, B is correct
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Correct Answer: B (NEET 2024; Conceptual)
20. To reduce the ripples in a rectifier circuit with capacitor filter:
A) RL should be increased
B) Input frequency should be decreased
C) Input frequency should be increased
D) Capacitors with high capacitance should be used
Correct Answer: D (NCERT Exemplar MCQ II)