SPEM LAB MANUAL
JSPM UNIVERSITY, PUNE
SCHOOL OF BASIC AND APPLIED SCIENCES
DEPARTMENT OF PHYSICS
LAB MANUAL
ON
SEMICONDUCTOR PHYSICS & ELECTROMAGNETISM (SPEM)
FIRST YEAR B. TECH (ALL Branches)
SPEM LAB MANUAL
SEMICONDUCTOR PHYSICS AND ELECTROMAGNETISM LAB
[Link]. I Year Sem I/II LTP
002
List of Experiments
1. V-I characteristics of p-n junction diode A) Forward bias B) Reverse bias.
2. Band gap of a semiconductor by Four Probe Method
3. Hall effect in a Semiconductor
4. Magneto Resistance measurement of semiconductor
5. Measurement of e / m for an electron by Thomson’s method
6. Measurement of magnetic susceptibility by Quincke’s method
7. Study of Biot – Savart’s law
8. Measurement of dielectric constant
9. Study of Faraday effect
10. Structural study of crystalline material
SPEM LAB MANUAL
SPEM LAB
Do’s
1. Always be on time. At the start of the lab period, there will be a short
introduction to the experiment you will perform on the particular day. 2. Do
keep your lab clean.
3. Before starting any laboratory work, follow all written and instructions
carefully.
4. Do inform the instructor if there is any problem while performing an
experiment.
5. Be aware of all the safety devices.
6. Please report any unsafe behavior or condition to the faculty member.
7. Bring your lab notebook to every lab meeting.
8. When you are done with your experiment, all components must be
dismantled and returned to proper locations.
9. Perform only those experiments authorized by your teacher. Carefully
follow all instructions, both written and oral.
[Link] experiments are not allowed in the Laboratory.
Don’ts
1. Do not eat, drink, chew gum, in the lab.
2. Do not use the phone while performing experiments.
3. Do not wear open-toed shoes (sandals) in the lab.
4. Conduct yourself in a responsible manner at all times in the laboratory.
Don’t talk aloud or crack jokes in the lab.
5. Students are not allowed to work in Laboratory alone or without the
presence of the teacher.
6. Students are not allowed to touch any equipment, chemicals or other
materials in the laboratory area until you are instructed by Teacher or
Technician.
SPEM LAB MANUAL
Experiment-1
PN Junction diode characteristics A) Forward bias B) Reverse bias
AIM: To plot V-I (Volt-Ampere) characteristics of P-N Junction Diode.
APPARATUS REQUIRED: Diode set-up, 3 digital multimeter and connecting wires.
THEORY:
A p-n junction diode conducts only in one direction. The V-I characteristics of the diode are
the curve between voltage across the diode and current through the diode. When external
voltage is zero, the circuit is open and the potential barrier does not allow the current to flow.
Therefore, the circuit current is zero. When P-type (Anode is connected to +ve terminal and N-
type (cathode) is connected to –ve terminal of the supply voltage, it is known as forward bias.
The potential barrier is reduced when the diode is in the forward biased condition. At some
forward voltage, the potential barrier is altogether eliminated and current starts flowing through
the diode and also in the circuit. The diode is said to be in ON state. The current increases with
increasing forward voltage.
When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected to –ve
terminal of the supply voltage is known as reverse bias and the potential barrier across the
junction increases. Therefore, the junction resistance becomes very high and a very small
current (reverse saturation current) flows in the circuit. The diode is said to be in OFF state.
The reverse bias current due to minority charge carriers.
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CIRCUIT DIAGRAM:
PROCEDURE:
i. Connections are made as per the circuit diagram.
ii. For forward bias, +ve terminal is connected to the anode of the diode and -ve terminal is connected
to the cathode of the diode,
iii. Switch ON the power supply and increase the input voltage (supply voltage) in Steps.
iv. Note down the corresponding current flowing through the diode and voltage across the diode for
each and every step of the input voltage.
v. The readings of voltage and current are tabulated.
vi. Similarly repeat the experiment for reverse bias circuit.
vii. Graph is plotted between voltage on x-axis and current on y-axis.
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OBSERVATIONS
Forward Bias:
S. No. Applied Voltage Voltage Across diode Current Across
(Volts) (V) Diode(mA)
1. 0.1
2. 0.2
3. 0.3
4. 0.4
5. 0.5
6. 0.6
7. 0.7
8. 0.8
9. 0.9
10. 1
Reverse Bias:
S. No. Applied Voltage Voltage Across diode Current Across
(Volts) (V) Diode(μ A)
1. 0.1
2. 0.2
3. 0.3
4. 0.4
5. 0.5
6. 0.6
7. 0.7
8. 0.8
9. 0.9
10. 1
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11. 2
12. 3
13. 4
14. 5
PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the diode. This
may lead to damage to the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
RESULT: The Forward and Reverse Bias characteristics for a p-n diode are observed
GRAPH
SPEM LAB MANUAL
SPEM LAB MANUAL
EXPERIMENT 2
Determination of Energy Band Gap.
Aim: To determine the band gap of a semiconductor using four probe method
Apparatus Required: Four probe apparatus, sample (a Ge crystal in form of a chip), oven,
thermometer, constant power supply, oven power supply, panel meters for measurement of
current and voltage
Principle and Working:
1. The resistivity of Ge crystal is given by ρ = (V/I). 2π s,
Where V is voltage, I is current (mA) and s is spacing between two point electrode.
While the energy band gap is given by Eg = (2 x 2.303 x k x log ρ )/ T
k is Boltzman constant =8.61 x 10-5 eVK-1 and T is absolute Temperature
Ohm's law: If physical conditions (like temperature, mechanical stress) remains unchanged,
then potential difference across two ends of a conductor is proportional to current flowing
through it V ∝ I
Therefore, V = IR
The constant of proportionality, R, is called resistance of the conductor.
Resistivity: ( R = ρ L /A )
At a constant temperature, the resistance, R, of a conductor is
(i) proportional to its length and (ii) inversely proportional to its area of cross-section.
Four probe method: The 4-point probe set up consists of four equally spaced tungsten metal
tips with finite radius. Each tip is supported by springs on the end to minimize sample damage
during probing. The four metal tips are part of an auto-mechanical stage which travels up and
down during measurements. A high impedance current source is used to supply current through
the outer two probes, a voltmeter measures the voltage across the inner two probes to determine
the sample resistivity. Typical probe spacing ~ 2 mm. These inner probes draw no current
because of the high input impedance voltmeter in the circuit. Thus, unwanted voltage drop (I R
drop) at point B and point C caused by contact resistance between probes and the sample is
eliminated from the potential measurements. Since these contact resistances are very sensitive
to pressure and to surface condition (such as oxidation of either surface).
SPEM LAB MANUAL
Procedure:
1. The setting of 4-point probes on the semiconductor chip is a delicate process. So first
understand the working of the apparatus. The semiconductor chip and probe set is
costly.
2. Note the values of probe spacing (s) and the thickness (w) of the semiconductor chip.
Note the type of semiconductor (germanium or something else).
3. Make the circuit as shown in Fig.1. Put the sample in the oven (at room temperature).
4. Pass a milliampere range current (say 2.5 mA) in the sample using constant current
power supply.
5. The reading of the current through the sample is measured using milliammeter provided
for this purpose. The voltage is measured by a high impedance milli voltmeter
connected to the inner probes. The readings can be taken alternately on a digital meter
provided for this purpose.
6. Note temperature of sample (oven) using thermometer inserted in the oven for this
purpose.
7. The oven temperature is increased a little, and its temperature is noted after reaching
steady state. Again the constant current reading and the corresponding voltage readings
are taken.
8. Repeat the procedure for different temperatures. Note the data in the observation table.
9. For each temperature, calculate the resistivity, ρ = ρ0/G7( w/s ) = ( V / I ) 2πS /G7(w/s)
10. Compute log ρ and 10-3/ T and write it in the observation table.
11. Plot a graph between log ρ and 10-3/ T . It is a straight line. Find its slope.
12. Calculate the band gap using formula, Eg = 2 x 2.303 x k x slope eV
SPEM LAB MANUAL
Observations:
1. Semiconductor chip material = Germanium
2. Spacing (distance) between the probes, s = 2.0 mm = [Link].
3. Thickness of the sample, w = 0.5 mm = 0.05 cm.
4. Constant Current = 2.5 mA
5. Room Temperature: 28 oC
𝑣 2𝜋𝑠
[Link] Temp in Temp Voltage (Mean) 1/T x 10-3 ρ= ×
𝐼
𝑤
𝐺 ( )
log ρ
0 𝑠
C (T)
in K
1. 30
2. 35
3. 40
4. 45
5. 50
6. 55
7. 60
8. 65
9. 70
10. 75
11. 80
Graph:
Variation of log ρ vs 1/T
Calculation
1. The correction factor for the given sample is G(w/s) = 5.89
2. Slope:
3. Energy Band Gap = 2.303 x 2 x k x slope eV
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Result:
The energy band gap for the given semiconductor (germanium) is = ……eV.
Precautions:
1. The surface of the semiconductor should be flat.
2. All the four probes should be collinear.
3. The adjustment of 4-point probes should be done gently, as the semiconductor chip is
brittle.
4. The voltage should be measured using inner probes only using a high impedance
millivoltmeter.
5. Temperature of the oven should not exceed the limits set by the manufacturer of the probes
and chip.
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Experiment -3
Halls Effect
Aim: Study of Hall Effect in a semiconductor
Apparatus: Hall effect set-up (Digital) with (i) digital voltmeter (0-200 mV) and (ii) constant
current power (0-20 mA) supply, Hall probe-Ge crystal, Hall probe-Indium Arsenide, Constant
current power supply for Digital Gauss meter (0-4 A), Digital Gauss meter (0-2 K gauss & 0-20 K
gauss), Electromagnet (EMU-75 or EMU-50 V).
Formulae Used:
1) Calculations from the graph 1 of Hall voltage VH (mV) vs current I (mA)
VH
i) Slope = ,
I
𝑡
ii) Hall coefficient =RH1 = Slope × 𝐵 m3/C
2) Calculations from the graph 2 of Hall voltage VH (mV) vs magnetic field B (mA)
VH
i) Slope = ,
B
𝑡
ii) Hall coefficient = RH2 = Slope × 𝐼 m3/C
Where, I is the current through semiconductor probe, B is applied magnetic field
𝑅𝐻1 +𝑅𝐻2
3) Mean RH = m3/C
2
1
4) Majority carrier concentration of electrons (n) or holes (p) = 𝑒𝑅 m-3
𝐻
5) Mobility of charge carriers μn (or μp) = σ RH m /Vs
2
Diagram:
SPEM LAB MANUAL
Procedure:
1. First, place the probe of the Gauss meter between the poles of the electromagnet, ensuring it is
perpendicular to the magnetic field. The Gauss meter displays the strength of the magnetic field
applied by the electromagnet. Make zero adjustment to ensure zero magnetic field strength is
being displayed at the zero-electromagnet current.
2. Keep the semiconductor probe between the poles of the electromagnet, ensuring it is exactly
perpendicular to the magnetic field. Make zero adjustment for the Hall voltage.
3. In first variation, keep magnetic field constant by means of adjusting the constat electromagnetic
current (⁓2A). Increase the semiconductor probe current in steps of 0.5 mA and note down the
corresponding Hall voltage (VH) developed.
4. In second variation, keep the semiconductor probe current constant (⁓ 2mA). Change the
magnetic field by increasing current through electromagnet in steps of 0.2 A. Note down Hall
voltage varying with the magnetic field.
5. Calculate the slope of graphs of I vs VH and B vs VH for further calculations.
Observations:
1) Variation of Hall voltage with probe current
2) Thickness of the sample t : 0.50 mm =0.05 cm
3) Resistivity (ρ) = 6 Ωcm
Constant magnetic field B = ---------- Gauss = ---------- wb/m2.
Observation Table 1
Sr. No Semiconductor Probe Hall Voltage
current (mA) VH (mV)
1
2
3
4
5
6
7
8
9
10
11
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Observation Table 2
4) Variation of Hall voltage with applied magnetic field
Constat current through probe = -------------- mA
Sr. Current Magnetic field Magnetic field Hall Voltage
No through (Gauss) (wb/m2) VH (mV)
electromagnet
(A)
1
2
3
4
5
6
7
8
9
10
11
12
Graphs:
SPEM LAB MANUAL
Calculations:
Determine the slope of the straight line in each of the plotted graphs and calculate corresponding
Hall coefficients.
Slope of graph 1 =
Slope of graph 2=
RH1 =
RH2 =
Mean Hall coefficient =RH=
Charge carrier concentration = n (or p) =
Mobility of charge carriers μn (or μp)=
Results:
1. Hall coefficient RH =
2. Charge carrier concentration = n (or p) =
3. Mobility of charge carriers μn (or μp) =
Precautions:
1. Ensure stable and correct voltage supply to avoid damaging or malfunctioning the magnetic field
sensor.
2. Securely mount the sensor to avoid physical movement that can affect accuracy.
3. Double-check wiring, avoiding reversed polarity, and ensure proper grounding to avoid signal
distortion.
SPEM LAB MANUAL
Experiment -4
Magneto-Resistance
Aim: Determination of magnetoresistance of a semiconductor
Apparatus: Hall effect set-up (Digital) with (i) digital voltmeter (0-200 mV) and (ii) constant
current power (0-20 mA) supply, Hall probe-Ge crystal, Hall probe-Indium Arsenide, Constant
current power supply for Digital Gauss meter (0-4 A), Digital Gauss meter (0-2 K gauss & 0-20 K
gauss), Electromagnet (EMU-75 or EMU-50 V).
Formulae Used:
𝑉
1) 𝑅 = 𝐼
𝛥𝑅 𝑅𝑚 −𝑅
2) =
𝑅 𝑅
Procedure:
1. First, place the probe of the Gauss meter between the poles of the electromagnet, ensuring it
is perpendicular to the magnetic field. The Gauss meter displays the strength of the magnetic
field applied by the electromagnet. Make zero adjustment to ensure zero magnetic field
strength is being displayed at the zero-electromagnet current.
2. Keep the semiconductor probe between the poles of the electromagnet, ensuring it is exactly
perpendicular to the magnetic field. Make zero adjustment for the Hall voltage.
3. Keep the semiconductor probe current constant (⁓ 2mA). Note down value of Hall voltage
for zero applied magnetic field at a constant probe current.
4. Further, change the magnetic field by increasing current through electromagnet in steps of
0.2 A. Note down Hall voltage varying with the magnetic field.
5. Calculate the changing resistance of semiconductor with varying magnetic field and plot the
graph.
Observations:
1) Constat current through probe = -------------- mA
2) Hall voltage at zero applied magnetic field (with zero electromagnet current)
= -------------- mV
𝑉
3) Resistance of semiconductor at zero magnetic field = 𝑅 = =-------------- Ω
𝐼
SPEM LAB MANUAL
Variation of Hall voltage with applied magnetic field.
Observation Table
Sr. Current Magnetic Magneti Hall Rm ΔR=Rm-R 𝚫𝑹
No through field c field Voltage (Ω) 𝑹
(Ω)
electromag (Gauss) (wb/m2) VH (mV)
net (A)
1
2
3
4
5
6
7
8
9
10
11
12
Graph:
Result: The magneto resistance of a material has been found to be increasing linearly with
increasing applied magnetic field.
Precautions:
1) Ensure accurate alignment between the magnetic field and the sample, and make zero calibration
of Gauss meter before monitoring the field strength.
2) Keep the sample at a stable temperature during measurement, as magnetoresistance is sensitive
to temperature changes.
3) Securely mount the sensor to avoid physical movement that can affect accuracy.
SPEM LAB MANUAL
Experiment -5
Biot Savart’s Law
Aim: To Study Biot Savart’s Law
Apparatus: Current conductor, Gauss meter, Axial Probe, High current power supply 20 A,
Optical bench, Holder for Plug-in elements and connecting leads
Diagram: Biot Savart’s Law Setup
Observation Table:
Part I: Magnetic field of a circular conductor as a function of current I
Sr. No. Circular conductor of diameter 40 mm
I (A) B(Gauss)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
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Part II: Magnetic field B as a function of distance Z from the center of the loop
Current I = 2 A
Sr. No. Circular conductor of diameter 40 mm
Distance(z) (cm) B(Gauss)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Results:
1. Biot-Savart’s Law is verified by showing that magnetic field produced is directly
proportional to the current passed in a coil. (Graph B Vs I)
2. Biot-Savart’s Law is verified by showing the magnetic field is inversely proportional
to distance. (Graph B Vs Z)
Graph 2
Graph 1
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Experiment -6
e/m by Thomson Method (Bar Magnet Method)
Aim: Determine the value of specific charge e/m of an electron by Thomson Method.
Apparatus Required: 1. Cathode Ray Tube (CRT) is mounted on wooden stand, 2. Power supply
fitted with a voltmeter to measure the deflecting voltage, 3. Bar Magnets(Permanent) one pair, 4.
Compass box one set, 5. Wooden stand having two arms fitted with scales to measure the distance
of the poles of the magnets. The stand can accommodate Cathode Ray Tube in its middle. 6.
Another wooden stand is also provided to place the compass box in the center. This wooden stand
also be mounted in the middle of the armed stand.
Formula Used:
e/m = ( V x Y x 107 / l x L x H2 x d ) e.m.u./gm.
Where H = He tan Θ
Where He is the horizontal components of earth magnetic field of the place where
experiment is performed, usually we take its value = 0.345.)
Other parameters are as follows:
l = Length of horizontal pair of plate
L = Distance of the screen from the edges of the plates
V = Voltage applied to the plates.
Y = Total deflection of the spot on the screen.
H = Intensity of the applied field
d = Separation between the plates.
Constant of the Cathode Ray Tubes:
a. Separation between the plates (d) = 10 mm
b. Length of horizontal pair of plate(l) = 25 mm
c. Distance of the screen from the edges of the plates(L) = 130 mm
SPEM LAB MANUAL
Diagram:
Figure 1: Experimental Set up
Figure 2: Internal mechanism of CRT display
Procedure:
1. Mount Cathode Ray Tube (CRT) in armed wooden stand such that the CRT in armed wooden
stand such that the CRT faces towards North and South direction while arms of the stand
towards East and West Direction. (Set the direction with the help of compass box.)
2. Connect the CRT Plug to the power supply socket mounted on the front panel.
3. Switch on the instrument using ON/OFF toggle switch provided on the front panel.
4. Set the deflection voltage to 0 Volt & X shift control potentiometer to middle position.
Adjust the intensity & focus of the spot (clear as small as point) on screen of CRT. Throw
the deflection selector switch towards forward position.
5. Read the initial reading of spot on the scale attached to the screen of the CRT, say it is 0.2
cm. Now give a deflection to the spot in the upward direction by applying deflecting voltage
such that the final reading is +0.8 cm. So the total deflection on the screen of the spot (Y) is
(0.2 + 0.8) = 1.0 cm. Note down this applied voltage (V) & deflection of the spot (Y) in
observation table.
6. Now place the Bar magnets on both sides of the wooden stand arms such that their opposite
poles face each other, and their common axis is perpendicular to the axis of Cathode Ray
Tube. The Bar Magnets should be kept in such a manner that these may be made to slide
along the scales.
7. Adjust distances and polarity of the magnets so that the spots traces back to it’s initial
position (which was -0.2 cm).
8. Remove Cathode Ray Tube from stand and place a magnet meter compass box mounted in
a stand in centre of the armed wooden stand. Adjust the pointer of the compass box to read
0-0 without disturbing the direction of armed wooden stand.
9. Note down the deflection angle (Θ) through the compass box & note down it in the
observation table. Calculate the value of magnetic field (H) by using formula:
SPEM LAB MANUAL
H = He tan Θ
(Where He is the horizontal components of the earth magnetic fields of the place where
experiments is performed, usually we take its value = 0.345)
Note down the value of magnetic fields (H2) in observation table.
10. Calculate the value of e/m by using formula:
e/m = V x Y x 107 / I x L x 𝐻 2 x d e.m.u. / gm.
11. Repeat steps 5 to 10 for other values of the spot deflection.
12. Calculate mean value of e/m for different set of readings.
Note : For better accuracy apply deflection voltage only up to 20 volts.
Observation Table:
Sr. No. Deflection Position of Magnet Deflection Magnetometer
on CRT (cm) Voltage Deflection
(cm)
(Y) 𝑿𝟏 (Left) 𝑿𝟐 (Right) 𝑿𝑴𝒆𝒂𝒏 𝜽𝟏 𝜽𝟐 𝜽𝒎𝒆𝒂𝒏
1. 5V
2. 10 V
3. 15 V
Results: The value of specific charge e/m of an electron by Thomson Method is ……..
SPEM LAB MANUAL
Experiment -7
Determination of Magnetic Susceptibility of FeCl₃ Solution Using Quincke’s Method
Aim:
To determine the magnetic susceptibility (𝛘) of an aqueous solution of ferric chloride using
Quincke’s method.
Apparatus Required:
Quincke’s tube (U-shaped tube) with stand set-up, Paramagnetic liquid sample – aqueous solution
of FeCl3, Measuring cylinder , Digital weighing meter , Electromagnet EMU-50T with variable
power supply, DPS-50, Digital Gaussmeter (for measuring magnetic field strength), DGM-102,
Traveling microscope, TVM-02
Formula:
Magnetic susceptibility is a measure of how much a material can be magnetized in an external
magnetic field. Quincke’s method is based on the concept that a paramagnetic liquid will rise in a
magnetic field due to the force acting on it.
When a paramagnetic liquid is placed in a U-shaped tube with one limb inside a uniform magnetic
field, the magnetic force causes the liquid to rise in the field limb by a height h relative to the other
limb. The difference in pressure due to this height difference balances the magnetic force, and the
magnetic susceptibility can be derived as:
𝝌= 𝟐𝜟𝒉𝝆𝒈/𝑯𝟐
where,
Δh is the rise or fall in the liquid level in the presence of magnetic field (in m)
ρ is the density of the liquid (in kg/m3)
g is the acceleration due to gravity, and
H is the magnetic field strength (in A/m)
SPEM LAB MANUAL
Procedure:
1. Fill the Quincke’s tube with the FeCl₃ solution, ensuring no air bubbles in the column.
2. Place the Quincke’s tube with the paramagnetic liquid between the poles of the
electromagnet, ensuring one limb is within the magnetic field region.
3. Measure the initial height h0 of the liquid when the magnetic field is zero.
4. Gradually increase the current in the electromagnet to generate a magnetic field. Measure
the magnetic field strength using the gaussmeter.
5. Observe and record the new height h of the liquid in the field limb under the influence of the
magnetic field.
6. Calculate Δh = h − h0, the rise in the liquid level due to the magnetic field.
7. Repeat steps 2–5 for different values of the magnetic field strength to ensure accuracy and
repeatability (atleast 3 values of H).
8. Use the formula provided in the theory to calculate the magnetic susceptibility of the liquid.
Observations and Calculations:
1. Ambient temperature = _______ K
2. The molecular weight of FeCl3 is 162.204 g/mol
3. Density(ρ) =1600 kg/m3
S. No Current I Magnetic Initial Height Final Height Rise Δh
(A) Field h0 (cm) h (cm) (cm)
Strength H
1. 0
2. 0.5
3. 1
4. 1.5
5. 2
6. 2.5
Graph
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Graph : Rise of solution level (h) as a function of magnetic field (H)
Calculations:
Substituting value of ρ = _______, g = 9.8 m/s2 and Δh / H2 = slope of curve,
we get χ
Results:
The magnetic susceptibility of the FeCl₃ solution is found to be _______________ .
Precautions:
1. Ensure that the Quincke’s tube is placed vertically.
2 Ensure the Quincke’s tube is free of air bubbles.
3 Avoid any vibrations that could disturb the liquid level.
4 Measure the magnetic field accurately with the gaussmeter.
5 Focus the travelling microscope carefully to avoid parallax errors.
SPEM LAB MANUAL
Experiment -8
Dielectric Constant
Aim: To determine the Dielectric Constant of different materials.
Apparatus Used: Dielectric Constant Measurement Trainer, CRO different samples( glass,
plywood and bakellite), path cords
Formula Used
𝑉𝑠𝑐
1. C = 𝑉𝐷𝐶 𝑥 𝐶𝑠𝑐
𝑟2
2. C0 = 36 𝑑 nf
𝐶
3. Dielectric constant (€): C0
Procedure :
1. Connect the Mains Cord to the trainer & switch ‘On’ the dielectric setup.
2. Place the dielectric sample between the plates of test capacitor such that the dielectric
sample just touches both the plates.
3. Note down the value of VDC and VSC using the toggle switch
4. Observe the radius and thickness of all the given sample using screw gauge and vernier
calliper.
Observations
CSC = 55 pF
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Observation Table
Dielectric Material Glass Plywood Bakellite
Thickness (d) cm 0.479 0.289 0.590
Radius (r ) cm 4.51 4.69 4.42
Standard Capacitor SC1 SC1 SC1
VSC
V DC
C0
C
€
Result
The dielectric constant of
Glass is
Plywood is
Bakellite is
Precautions:
1 The sample should be kept coaxial to capacitor plates.
2 Least Pressure should be exerted on the samples.
3 Sample surface must be flat.
4 Diameter of the sample must be less than gold plates.