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NPN Transistor Working Explained

The document explains the working principle of an n-p-n transistor, detailing the biasing of the emitter-base and collector-base junctions. It describes how the emitter current (Iₑ) is generated, with 5% of electrons contributing to the base current (Iᵦ) and 95% flowing to the collector current (I꜀). The relationship between the currents is summarized by the equation Iₑ = Iᵦ + I꜀.

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riya25.09.00
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12 views7 pages

NPN Transistor Working Explained

The document explains the working principle of an n-p-n transistor, detailing the biasing of the emitter-base and collector-base junctions. It describes how the emitter current (Iₑ) is generated, with 5% of electrons contributing to the base current (Iᵦ) and 95% flowing to the collector current (I꜀). The relationship between the currents is summarized by the equation Iₑ = Iᵦ + I꜀.

Uploaded by

riya25.09.00
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd

NPN tranistor

Working of n-p-n transistor


The circuit diagram for biasing of n-p-n
transistor is as shown. The emitter base
junction is forward biased i.e. the −ve
terminal of battery VEB is connected to
emitter & +ve terminal to the base. Collector
base junction is reverse biased i.e. the +ve
terminal of battery VCB is connected to
collector & the −ve terminal to the base.
The resistance of emitter base junction is very
low so voltage VEB is quite small (0.5 volt).
The resistance of collector base junction is
very high so voltage VCB is quite large (25
volt).
Electrons which are majority charge (−ve) are
repelled towards base by −ve potential
resulting emitter current (Iₑ). The base being
lightly doped has low number density of holes
within the base region then only few e⁻’s (5%)
are lost in recombination with holes in base,
resulting in base current (Iᵦ ≈ 5% Iₑ). The
remaining 95% of e⁻’s pass over to the
collector on account of high +ve potential of
collector due to battery VCB, resulting in
collector current (I꜀ ≈ 95% of Iₑ).
As one e⁻ reaches the collector, it flows to the
+ve terminal of VCB through connecting wire.
At the same time one e⁻ flows from −ve
terminal of VCB to +ve terminal of VEB & one
e⁻ from −ve terminal of VEB to emitter.
When the e⁻ coming from emitter combine
with hole in base, the deficiency of hole in
base is compensated by breakage of covalent
bond there. The e⁻ so released flows to the
+ve terminal of battery VEB through
connecting wire. Thus, in n-p-n transistor
current is carried inside the transistor as well
as in external circuit by the e⁻’s.
Also, Iₑ = Iᵦ + Ic

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