Sri Krishna Institute of Technology Approved by Date 02-01-2026
AICTE, New Delhi & Affiliated to Anna
University,Chennai Total Page 06
Course File Leaf (Theory)
For the Academic Year 2025 - 2026 (Odd/Even Semester)
Staff Name S. Dept. / AP/EEE Strength 6
Adhikesavaperumal Designation
Course/Branch B.E / ECE Year / Semester I / II Credit 03
Course Code/ Subject
Code/Choice
EC25C01 Subject Electron Devices
Name
OB1: Acquaint students with construction, theory and operation of PN junction diodes, BJTs, FETs,
power control devices and optoelectronic devices.
OB2: Enable analysis of characteristics and applications of electronic devices.
OB3 : Develop hands-on understanding through experiments and virtual demonstrations.
Pre requisites :Basic knowledge of engineering physics, electric circuits, semiconductor
fundamentals,
and elementary mathematics is required to understand the concepts covered in this course
Guidelines (Paper’s Nature) : The paper is conceptual and analytical in nature, emphasizing
semiconductor
device physics, characteristics, derivations, numerical problem solving, and practical applications, with
assessments
aligned to Bloom’s taxonomy.
Course Out Come (4) : At the end of this course, the students will be able to
COs Outcomes Bloom’s Taxonomy
C01 Explain the behavior of Semiconductor physics and its applications in Understand /
electron devices. Comprehension
C02 Apply the concepts and compare the different configuration of various Apply / Analyze
electron devices
C03 Analyze and interpret the characteristics of various electron devices. Analyze
C04 Perform experiments to evaluate and compare the characteristics Apply / Analyze
of electronic
components.
• CO–PO, PSO Mapping:(3- > Strong, 2- > Moderate, 1 – >Low)
CO \ PO / PSO PO1 PO2 PO3 PO4 PO5 PSO1 PSO2
CO1 3 2 1 1 – 3 2
CO2 2 3 2 1 – 3 2
CO3 2 3 2 2 1 3 3
CO4 2 2 2 3 3 2 2
• Books to be Referred :
• Neamen, D. A. (2012). Semiconductor physics and devices. Tata McGraw-Hill.
• Boylestad, R. L., & Nashelsky, L. (2008). Electronic devices and circuit theory. Pearson Prentice
Hall.
• Yang, C. Y. (1978). Fundamentals of semiconductor devices. McGraw-Hill International.
• Salivahanan, S., Suresh Kumar, N., & Vallavaraj, A. (2008). Electronic devices and circuits. Tata
McGraw-Hill.
• Floyd, T. L. (2018). Electronic Devices: Conventional Current Version. Pearson.
• E-Learning Resources :
• [Link]
• [Link]
• Razavi Electronics 1, Lec 1, Intro., Charge Carriers, Doping
• Semiconductor Devices: Fundamentals
• Method of Evaluation (Considered for CO Assessment ) :
CO Assessment Direct
CO Evaluation Internal : CO Eval Ext
Int 1,2/ Unit / Case Assign., Seminar Quiz GD RP Project/Lab University
Mod CAT Study
1,2
Yes Yes Yes Yes Yes Yes No NA Yes Yes
CO Assessment Indirect
Course Exit Survey Yes
•
• Lesson Plan:
Content No. of
S. Reference Cumulative
Topic CO BTL Delivery Periods
No. Book no. & Periods
Mode * Required
Page no.
UNIT I - SEMICONDUCTORS
Types of
1. CO1 L2 BB/PPT Neamen 1 1
semiconductors,
conductivity
Electron energy levels &
2. CO1 L3 BB/PPT Boylestad 1 2
energy band diagram
Carrier concentration &
3. CO1 L4 BB/PPT Neamen 1 3
Mass Action Law
4. Intrinsic semiconductor CO1 L3 BB/PPT Floyd 1 4
& characteristics
Temperature effects on
5. CO1 L4 BB/PPT Boylestad 1 5
semiconductors
6. Drift & diffusion currents CO2 L4 BB/PPT Neamen 1 6
Current density equation
7. CO2 L4 BB/PPT Neamen 1 7
(derivation)
Generation, recombination &
8. carrier lifetime CO1 L3 BB/PPT Neamen 1 8
9. Continuity equation CO2 L4 BB/PPT Neamen 1 9
UNIT II- PN JUNCTION & SPECIAL DIODES
PN junction
10. CO1 L3 BB/PPT Boylestad 2 11
formation & EBD
(open circuit)
Forward & reverse
11. CO2 L4 BB/PPT Boylestad 1 12
bias; V–I
characteristics
Diode resistances
12. CO2 L3 BB/PPT Floyd 1 13
(static & dynamic)
13. Junction capacitances CO2 L3 BB/PPT Floyd 1 14
Temperature effect
14. CO2 L4 BB/PPT Boylestad 1 15
& applications
Zener diode &
15. CO3 L4 BB/PPT Boylestad 1 16
voltage regulation
Varactor, Tunnel &
16. CO3 L3 BB/PPT Floyd 1 17
Photo diodes
UNIT III- BIPOLAR JUNCTION TRANSISTORS
BJT construction & operation
17. CO1 L3 BB/PPT Boylestad 1 18
CB, CE, CC configurations &
18. CO2 L4 BB/PPT Boylestad 2 20
characteristics
Regions of operation &
19. CO2 L4 BB/PPT Floyd 1 21
current gain
Early effect &
20. CO3 L4 BB/PPT Boylestad 1 22
applications
21. Multi-emitter transistor CO3 L3 BB/PPT Floyd 2 24
UNIT IV- FIELD EFFECT TRANSISTORS
JFET construction &
22. CO1 L3 BB/PPT Boylestad 2 26
characteristics
JFET parameters & drain
23. CO2 L4 BB/PPT Boylestad 1 27
current equation
MOS capacitor &
24. CO2 L4 BB/PPT Floyd 2 29
MOSFET operation
E/D MOSFETs, nMOS & pMOS
25. CO3 L3 BB/PPT Floyd 1 30
26. CMOS basics & CO3 L3 BB/PPT Floyd 1 31
applications
UNIT V- THYRISTORS, UJT & OPTOELECTRONIC DEVICES
SCR, DIAC, TRIAC –
27. operation & CO1 L4 BB/PPT Boylestad 2 33
characteristics
Thyristor
28. CO2 L3 BB/PPT Floyd 1 34
protection
techniques
UJT & relaxation
29. CO3 L4 BB/PPT Boylestad 2 36
oscillator
LED, LCD,
30. Phototransistor, CO3 L3 BB/PPT Floyd 1 37
opto- coupler
Power MOSFETs &
31. CO3 L3 BB/PPT Floyd 1 38
applications
BB - Blackboard, VD – Videos, GD – Group Discussion, RP – Role Play, SEM–Seminar, DM-
Demo/Lab, WS-Web Search, MPJ–Mini Project., AS-Assignment, TUT- Tutorial, CO – Course
Outcome, BTL- Blooms Taxonomy Level.
• Lesson Plan for Activity:
Content Reference
S. No. of Cumulative
Topic CO BTL Delivery Book no. &
No. Periods Periods
Mode * Page no.
Required
UNIT I - SEMICONDUCTORS
Virtual demonstration
CO1, L1,
1. of energy levels, Drift VD Youtube 1 1
CO2 L2
and diffusion current.
UNIT II- PN JUNCTION & SPECIAL DIODES
Virtual
demonstration of
CO2, L4,
2. characteristics of VD Youtube 1 2
CO3 L5
junction diodes,
Design of a constant
voltage regulator
using Zener Diode
UNIT III- BIPOLAR JUNCTION TRANSISTORS
Input and Output
3. CO3 L4 DM Lab Manual 2 4
characteristics of BJT.
UNIT IV- FIELD EFFECT TRANSISTORS
Input and Output
characteristics of
4. CO3 L4 DM Lab Manual 2 6
Characteristics of
JFET, MOSFET.
UNIT V- THYRISTORS, UJT & OPTOELECTRONIC DEVICES
VI characteristics of
5. CO3 L4 DM Lab Manual 1 7
SCR, UJT.
• Content Beyond Syllabus:
Lecture Tutorial Practical Total
(P) Contact Contributin
Course Code (L) (T) g POs &
Syllabus Hours
& Title PSOs
Content
Beyond
Curriculum
Case studies on
PO2,
EC25C01 – real-time
PO5
Electron applications of 3 0 0 3
PSO1,
Devices electronic
PSO2
devices such as
diode-based
rectifiers, BJT
amplifiers,
MOSFET
switching
circuits, SCR-
based power
control
systems, and
optoelectronic
sensors
• Lesson Schedule (Planned with Timetable):
No. Unit No / Description Duration (Date) Total Course Remarks
No of Outcome (if any
Periods Deviation)
From To
1. Semiconductor Fundamentals 9 CO1
2. PN Junction Diode & Special 8 CO2
Diodes
CO2,
3. Bipolar Junction Transistor (BJT) 7
CO3
4. Field Effect Transistors 7 CO3
5. Thyristors, UJT & 7 C04
Optoelectronic Devices
IX. Unit Test /
CAT Test:
No. Date UNIT / CAT Portion No. Date UNIT / CAT Portion
1.
2.
3.
• Interna
l/
Model
Test
No. Tentative Date Portion Total Appear Pass %
1
2
3 `
• Assignments:
Unit Topic Suggestion* Group / Course Announced Submitted
No. Individual Outcome Date Date
PN Junction Diode –
2 Books Group CO2
V–I
Characteristics and
Applications
BJT Configurations
3 (CB, CE, CC): Books Group CO3
Characteristics,
Advantages and
Applications
JFET and MOSFET –
4 Principle of Operation, Books Group CO3
Characteristics and
Applications
Power Devices and
5 Optoelectronic Web sources Group CO4
Devices (SCR, UJT,
LED, Photo Diode):
Case Studies
* Suggestion: Books / Journals / Magazines / Web Resources
• Tutorial:
Unit Topic (Questions / Problems / Course Question Discussed Completed
No. Exercises) Outcome Count Date Date
Numerical problems on drift &
1 diffusion current, CO1, CO2 8
carrier concentration, Mass Action
Law, and current density equation
Problems on PN junction diode
2 current equation, static & dynamic CO2, CO3 8
resistance, junction capacitances,
and Zener regulator design
Numerical problems on BJT current
3 CO2, CO3 6
gains (α, β),
CE configuration, and region of
operation
Problems on JFET parameters (gm,
4 rd, μ), JFET CO3 6
drain current equation, and
MOSFET characteristics
Problems on SCR triggering, holding
5 & latching CO4 6
currents, UJT relaxation oscillator,
and Power MOSFET applications
*Attach Proof of Tutorial Sheets Separate in given Format.
Staff In Charge Head of the Department
Principal