EEE1001
ELECTRIC CIRCUITS AND SYSTEMS
Module 4 – Tutorial
Dr. Arindam Dutta
Assistant Professor
School of Electrical and Electronics Engineering
VIT Bhopal
Email: arindamdutta@[Link]
Cabin: C-509
Q1: A silicon diode is connected across a 3 V supply with a series resistance of 20 Ω. Neglecting diode resistance, calculate
the diode current.
A silicon diode has VF = 0.7 V. The diode equivalent circuit has been shown. Applying Kirchhoff ’s voltage law,
Q2. For the circuit, find : (i) the output voltage, (ii) the voltage drop across series resistance, and (iii) the current through
zener diode.
If we remove the zener diode, the voltage V across the open-circuit is given by :
Since voltage across zener diode is greater than VZ (= 50 V), the zener is in the “on”
state. It can, therefore, be represented by a battery of 50 V.
(i)
(ii)
(iii)
Q3. Find the maximum and minimum values of zener diode current.
The first step is to determine the state of the zener diode. For the given range of
voltages (80 − 120 V), the voltage across the zener is greater than VZ (= 50 V).
Hence the zener diode will be in the “on” state for this range of applied voltages.
Consequently, it can be replaced by a battery of 50 V.
Maximum zener current: The zener will conduct maximum current when the input voltage is maximum i.e. 120 V.
Under such conditions :
Minimum Zener current: The zener will conduct minimum current when the input voltage is minimum i.e. 80 V. Under
such conditions, we have,
Q4: A half-wave rectifier produces a maximum load current (peak value) of 50 mA through a 1200 Ω resistor. Calculate the
PIV of the diode. The diode is of silicon material.
Please note that it is not mandatory to assume the voltage drop in the diode if information regarding the same is not given in
the question.
Q5: A half-wave rectifier circuit has been made using a step-down transformer of turn ratio 10:1. The input voltage is v =
325sinωt the diode forward resistance is 25 Ω. A load resistance of 1.2 kΩ has been connected in the circuit. Assuming a
secondary winding resistance of the transformer as 1Ω, calculate the following: (a) rms value of load current (b) rectification
efficiency, and (c) ripple factor.
where R2 is the secondary winding resistance, RF is the forward resistance of the diode and RL is the load resistance.
Q6: Determine for the bridge circuit the peak value of load current when Vi = 15 V, RL = 600 Ω and the forward voltage drop
of the diode is 0.7 V. Also calculate the average value of the output current.
Q7: An n–p–n transistor has been shown provided with biasing voltage VBE and VCB. Calculate the values of IC and IE if dc is
0.96 and IB is 80 μA. Also calculate the value of βdc
10-6 A
Q8: In an n–p–n transistor in the common emitter configuration, an ac input signal of ± 40 mV is applied. The dc current gain
and ac current gain are given as 80 and 100, respectively. Calculate the voltage amplification of the amplifier. The IB versus
VBE characteristic is such that for VB = 0.7 V, IB = 12 mA and for Vi = ± 40 mV, Ib = ±4 mA. Also calculate the dc collector
voltage.