14.

SEMICONDUCTOR ELECTRONIC:
MATERIAL, DEVICES AND SIMPLE
CIRCUITS

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IMPORTANT FIGURES

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IMPORTANT FORMULAS

[Link] semiconductors : 𝑛 = 𝑛 = 𝑛
[Link] semiconductors : 𝑛 𝑛 = 𝑛

NCERT STUFF-WORKSHEET 14.1

1.C, Si and Ge have same lattice structure. Why is C insulator while Si and Ge
intrinsic semiconductors?
2. Suppose a pure Si crystal has 5 x 10 28 atoms m-3. It is doped by 1 ppm
concentration of pentavalent As. Calculate the number of electrons and holes.
Given that ni = 1.5 x 1016 m-3.
3. Can we take one slab of p-type semiconductor and physically join it to
another n-type semiconductor to get p-n junction?
4. In half-wave rectification, what is the output frequency if the input frequency
is 50 Hz. What is the output frequency of a full-wave rectifier for the same
input frequency?

OTQ-WORKSHEET 14.2
Multiple choice questions

[Link] conductivity of a semiconductor increases with increase in temperature,

because :
a) number density of free current carriers increases
b) relaxation time increases
c) both number density of carriers increases, relaxation time decreases but
effect of decrease in relaxation time is much less than increase in the number
density

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[Link] make a p-type semiconductor, an intrinsic semiconductor is doped with

__________.
a) phosphorus b) antimony
c) aluminium d) arsenic
[Link] ratio of output frequencies of half wave rectifier, when an input of
frequency 200Hz is fed at input?
a) 1:2 b) 2:1
c) 4:1 d) 1:4

4. In an n-type silicon , which of the following statement is true:

(a) Electrons are majority carriers and trivalent atoms are the dopants
(b) Electrons are minority carriers and pentavalent atoms are the dopants.
(c) Holes are minority carriers and pentavalent atoms are the dopants.
(d) Holes are majority carriers and trivalent atoms are the dopants.

5. In an unbiased p-n junction, holes diffuse from the p-region to n-region because
a) Free electrons in the n-region attract them.
b) They move across the junction by the potential difference
c) Hole concentration in p-region is more as compared to n-region
d) All of the above
6. The potential barrier of germanium diode is-
a)0.1V b) 0.3V
c) 0.5V d) 0.7
7. Which is reverse biased diode?

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8. Which of these graphs shows potential difference between p -side and n -side
of a p−n junction in equilibrium?

9. The diode shown in the circuit is a silicon diode. Determine the potential
difference between the points A and B will be:

a) 6V b) 0.6V c) 0.7V d) 0V

10. The current through an ideal p-n junction shown in the following circuit
diagram will be-
a) zero b) 1mA c) 10mA d) 30mA

1 D
2 C
3 A
4 C
5 C
6 B
7 B
8 C
9 A
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10 A ANSWERS

Multiple choice questions

[Link], Semiconductor and Insulator, the forbidden energy gap are E1
,E2 and E3 respectively. Which one is correct
a) E1 <E2 < E3
b) E1 >E2 = E3
c) E1 = E2 < E3
d) E1 >E2 > E3
2. Silicon is doped with which of the following to obtain P type semiconductor
a) Phosphorus
b) Gallium
c) Germanium
d) Bismuth
3. What happens to resistance of an intrinsic semiconductor when heated
a) Increases
b) Remains constant
c) Decreases
d) Decreases linearly
4. A semiconductor has an electron concentration of 6 × 1022 per m3and hole
concentration of 8.5 × 109 per m3 .Then it is
a) N type semiconductor
b) P type semi-conductor
c) Intrinsic semiconductor
d) Conductor
5. What type of doping is used in Zener diode
a) Light
b) Moderate
c) Heavy
d) No doping
6. In an n-type silicon, which of the following statement is true :
a) Electrons are majority carriers and trivalent atoms are the dopants.
b) Electrons are minority carriers and pentavalent atoms are the dopants.
c) Holes are minority carries and pentavalent atoms are the dopants.
d) Holes are majority carries and trivalent atoms are the dopants.

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7. Carbon, silicon and germanium have four valence electrons each. These are
characterized by valence and conduction bands separated by energy band gap
respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following statements is
true?
a) (Eg)Si < (Eg)Ge < (Eg)C
b) (Eg)C < (Eg)Ge < (Eg)Si
c) (Eg)C > (Eg)Si > (Eg)Ge
d) (Eg)C = (Eg)Si = (Eg)Ge
8. In an unbiased p-n junction, holes diffuse from the p-region to n-region
because
a) Free electrons in the n-region attract them.
b) They move across the junction by the potential difference.
c) Hole concentration in p-region is more as compared to n-region.
d) All the above.
9. When a forward bias is applied to a p-n junction, it
a) Raises the potential barrier.
b) Reduces the majority carrier current to zero.
c) Lowers the potential barrier.
d) None of the above.
10. In a p-type silicon, which of the following statement is true :
a) Electrons are majority carriers and trivalent atoms are the dopants.
b) Electrons are minority carriers and pentavalent atoms are the dopants.
c) Holes are minority carries and pentavalent atoms are the dopants.
d) Holes are majority carries and trivalent atoms are the dopants.
11. The intrinsic semiconductor becomes an insulator at
a) 0°C
b) -100°C
c) 300 K
d) 0 K
12. In the forward bias arrangement of a PN-junction diode
a) The N-end is connected to the positive terminal of the battery
b) The P-end is connected to the positive terminal of the battery
c) The direction of current is from N-end to P-end in the diode
d) The P-end is connected to the negative terminal of battery
13. In a PN-junction diode
a) The current in the reverse biased condition is generally very small ~ µA
b) The current in the reverse biased condition is small but the forward
biased current is independent of the bias voltage
c) The reverse biased current is strongly dependent on the applied bias
voltage
d) The forward biased current is very small in comparison to reverse biased
current
14. A P-type semiconductor can be obtained by adding

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a) Arsenic to pure silicon

b) Gallium to pure silicon
c) Antimony to pure germanium
d) Phosphorous to pure germanium
15. Electrical conductivity of a semiconductor
a) Decreases with the rise in its temperature
b) Increases with the rise in its temperature
c) Does not change with the rise in its temperature

d) First increases and then decreases with the rise in its temperature
16. A semiconductor is cooled from T1K to T2K. Its resistance
a) Will decrease
b) Will increase
c) Will first decrease and then increase
d) Will not change

17. The cut-in voltage for silicon diode is approximately

a) 0.2 V
b) 0.6 V
c) 1.1 V
d) 1.4 V

18. The depletion layer in the P-N junction region is caused by

a) Drift of holes
b) Diffusion of charge carriers
c) Migration of impurity ions
d) Drift of electrons

19. Which is reverse biased diode

a)

b)

c)

d)

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[Link] a full wave rectifier circuit is operating from 50 Hz mains, the

fundamental frequency in the ripple will be
a. 50 Hz
b. 70.7 Hz
c. 100 Hz
d. 25 Hz
21. In a full wave rectifiers, input ac current has a frequency ‘v ’. The output
frequency of current is
a) v/2
b) v
c) 2v
d) None of these

Answer key

 Multiple choice questions

1. (a) 2. (b) 3. (c) 4. (a) 5. (c) 6. (c) 7. (c) 8. (c)
9. (c) 10. (d) 11. (d) 12. (b) 13. (a) 14. (b) 15. (b) 16. (b)
17. (b) 18. (b) 19. (b) 20. (c) 21. (c)

MARK QUESTIONS-WORKSHEET 14.3

1. Sn, C and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an
insulator while Si and Ge are semiconductor. Why?
2. Show variation of resistivity of Silicon with temperature in graph.
3. How does the width of depletion region of a PN junction vary if doping
concentration is increased.

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4. The graph shown in the figure represents a plot of current versus voltage for given
semi-conductor. Identify the region. if any, over which the semi-conductor has a
negative resistance

5. Can the potential barrier across a p-n junction be measured by simply connecting
a voltmeter across the junction?
6. In half wave rectification, what is the output frequency if input frequency is
25 Hz?
7. At what temperature would an intrinsic semiconductor behave like a perfect
insulator?

[Link] do you mean by dynamic resistance of a p-n junction diode?

2 MARKS QUESTIONS-WORKSHEET 14.4

[Link] number of silicon atoms per 𝑚 . is 5 × 1028. This is doped
simultaneously with 5 × 1022 atoms per 𝑚 . of Arsenic and 5 × 1020 per 𝑚
atoms of Indium. Calculate the number of electrons and holes. Given that n i =
1.5 × 1016 𝑚 . Is the material n-type or p-type?
[Link] two characteristic features to distinguish between n-type and p- type
semiconductors.
[Link] a slab of p- type semiconductor be physically joined to another n-type type
semiconductor slab to form p-n junction? Justify your answer.
[Link] the two processes that take place in the formation of a p-n junction.
Explain with the help of diagram , the formation of depletion region and barrier
potential in a p-n junction.
5. i) In the following diagram, is the junction diode forward biased or reverse
biased?

ii) Draw the circuit diagram of a full wave rectifier and state how it works?
6. Draw the labelled diagram of a full wave rectifier circuit. State its working
principle. Show the Input-output waveforms.

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7. There are two semiconductor materials A and B which are made by doping
germanium crystal with indium and arsenic respectively. As shown in the figure,
the junction of two is biased with a battery. Will the junction be forward bias and
reverse bias?

8. Assuming that the resistance of the meters are negligible, what will be the
readings of the ammeters A1 and A2 in the circuit shown in figure.

9. Assuming that the two diodes D1 and D2 used in the electric circuit shown in the
figure are ideal, find out the value of the current flowing through 1Ω resistor.
10. A potential barrier of 0.4V exists across a p-n junction.

i) If the depletion region is 4.0×10-7m wide, what is the intensity of the electric
field in this region?
ii) If an electron with speed 4.5 × 105 m / s approaches the p-n junction from
the n-side, find the speed with which it will enter the p-side.
11. In half-wave rectification, what is the output frequency if the input frequency is
50 Hz. What is the output frequency of a full-wave rectifier for the same input
frequency.

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3 MARKS QUESTIONS-WORKSHEET 14.5

[Link] the energy band diagram when intrinsic semiconductor (Ge) is doped
with impurity atoms of Antimony (Sb). Name the extrinsic semiconductor so
obtained and majority charge carriers in it.
[Link] the energy band diagrams of – i) a Metal ii) a semiconductor
3. If each diode in Figure has a forward bias resistance of 25 Ω and infinite
resistance in reverse bias, what will be the values of the current I1 , I2 , I3 and I4

4. Predict effect on the electrical properties of a silicon crystal at room

temperature if every millionth silicon atom is replaced by an atom of indium.
Given, concentration of silicon atoms =5×10 28 m -3 , intrinsic carrier
concentration = 1.5 × 1016 m-3 , He = 0.135m3/V-s and Hh =0.048m3 /V-s.

5. Distinguish between an intrinsic semiconductor and a p-type semiconductor.

Give reason why a p-type semiconductor crystal is electrically neutral , although
ne >> ne ?

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WORKSHEET 14.6

[Link] the necessary circuit diagrams, show how the V-I characteristics of a
p-n junction are obtained in
a) Forward biasing
b) Reverse biasing
How are these characteristics made use of in rectification?
2. An AC signal is fed into two circuits X and Y and the corresponding output
in the two cases have the waveforms as shown in below.

a) Identify the circuits X and Y. Draw their labelled circuit diagrams.

b) Briefly explain the working of circuit Y.
c) How does the output waveform from circuit Y get modified when a
capacitor is connected across the output terminals parallel to the load
resistor?

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CASE STUDY QUESTIONS-WORKSHEET 14.7

1.A pure semiconductor germanium or silicon, free of every impurity is called intrinsic
semiconductor. At room temperature, a pure semiconductor has very small number of
current carriers (electrons and holes). Hence its conductivity is low.
When the impurity atoms of valance five or three are doped in a pure semiconductor, we get
respectively n- type or p- type extrinsic semiconductor. In case of doped semiconductor.
𝑛 𝑛 =𝑛 Where 𝑛 and 𝑛 are the number density of electron and hole charge carriers
in a pure semiconductor. The conductivity of extrinsic semiconductor is much higher than
that of intrinsic semiconductor.

(i) Which of the following statements is not true?

a) The resistance of intrinsic semiconductor decreases with increase of temperature.
b) Doping pure Si with trivalent impurities gives p- type semiconductors.
c) The majority charges in n- type semiconductors are holes.
d) All of the above.

(ii) The impurity atoms with which pure Si should be doped to make a p- type
semiconductor is
a) Phosphorus
b) Boron
c) Arsenic
d) Antimony

(iii) Holes are majority charge carriers in

a) Intrinsic semiconductors
b) n – type semiconductor
c) p- type semiconductors
d) Metals

(iv) At absolute zero, Si acts as

a) Non- metal
b) Metal
c) Insulator
d) None of these

2.p-n junction is a semiconductor diode. It is obtained by bringing p-type semiconductor in

close contact with n-type semiconductor. A thin layer is developed at the p-n junction
which is devoid of any charge carrier but has immobile ions. It is called depletion layer. At

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the junction a potential barrier appears which does not allow the movement of majority
charge carriers across the junction in the absence of any biasing of the junction.
If p-side of p-n junction is connected to positive terminals of external battery and n-side is
connected to negative terminal of external battery, then the p-n junction is said to be
forward biased. If n-side of p-n junction is connected to positive terminals of external
battery and p-side is connected to negative terminal of external battery, then the p-n
junction is said to be reverse biased. The p-n junction offers low resistance when forward
biased and high resistance when reverse biased.

(i) In the middle of depletion layer of reverse biased p- n junction, the

a) Electric field is zero
b) Potential is zero
c) Potential is maximum
d) Electric field is maximum

(ii) The current in the circuit shown in the figure is

a) 20 A
b) 2 x 10-3 A
c) 200 A
d) 2 x 10-4 A

(iii) The number of majority carriers crossing the junction of diode depends
a) Concentration of doping impurities
b) Magnitude of potential barriers
c) Magnitude of the forward bias voltage
d) Rate of thermal generation of electron–hole pairs

(iv) In an unbiased p-n junction, holes diffuse from the p- region to the n- region
a) Free electron in the n-region attract them
b) They move across the junction due to potential difference
c) Hole concentration in p-region is more as compared to n-region
d) All of the above

[Link] the V-I characteristic of a junction diode we see that it allows current to pass only
when it is forward biased. So, if an alternating voltage is applied across a diode the current
flows only in that part of the cycle when the diode is forward biased. This property is used
to rectify alternating voltages and the circuit used for this purpose is called a rectifier. A

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semiconductor device is used as a rectifier that allows the voltage to flow in positive
direction and very small value in the reverse direction.
If an alternating voltage is applied across a diode in series with a load, a
pulsating voltage will appear across the load only during the half cycles of the ac input
during which the diode is forward biased. Such rectifier circuit is called a half-wave
rectifier.
The circuit using two diodes gives output rectified voltage corresponding to both
the positive as well as negative half of the ac cycle. Hence, it is known as full-wave rectifier.

(i) The peak voltage in the output of a half wave rectifier fed with a sinusoidal signal
without filter is 10 V. The d.c. component of the output voltage is
a) 10/√2 V
b) 20/π V
c) 10 V
d) 10/π V

(ii) When a p-n junction diode is reverse biased then

a) No Current flows
b) The depletion region is increased
c) The depletion region is reduced
d) Height of potential barrier is reduced

(iii) Which device is used to convert AC into DC

a) Condenser
b) Amplifier
c) Rectifier
d) Modulator

(iv) In a full wave rectifier circuit operating from 50 Hz mains frequency, the
fundamental frequency in the ripple would be
a) 50 Hz
b) 100 Hz
c) 25 Hz
d) 70.7 Hz
• Answer key

1. 2. 3.
(i) (c) (i) (c) (i) (d)
(ii) (b) (ii) (c) (ii) (b)
(iii) (c) (iii) (d) (iii) (c)
(iv) (c) (iv) (c) (iv) (b)

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HOT-OTQ-WORKSHEET 14.8

1. The depletion layer in the p-n

junction is caused by -
(1) drift of holes
(2) diffusion of charge carriers
(3) migration of impurity ions (1) 3.4 mA (2) 2 mA
(4) drift of electrons (3) 2.5 mA (4) 3 mA
2. A silicon diode has a forward voltage 7. Avalance breakdown is due to–
drop of 1.2 V for a forward DC current of (1) Collision of minority charge carrier
100 mA. It has a reverse current of 1 × (2) Increase in depletion layer thickness
10–6 A for a reverse voltage of 10 V. The (3) Decrease in depletion layer thickness
bulk and reverse resistances of diode are (4) None of these

(1) 5 , 10 M (2) 6 , 6 M
(3) 7 , 70 M (4) 5 , 1 M KEY
3. In the circuit, if the forward voltage
drop for the diode is 0.5 V, the
current will be: -
Q 1 2 3 4 5 6 7

A 2 1 1 2 1 1 1

(1) 3.4 mA (2) 2 mA

(3) 2.5 mA (4) 3 mA
4. The circuit has two oppositely
connected ideal diodes in parallel.
What is the current flowing in the
circuit?

(1) 1.71 A (2) 2.00 A

(3) 2.31 A (4) 1.33 A
5. A Ge specimen is doped with Al.
The concentration of acceptor
atoms is ~ 1021 atoms/m3. Given
that the intrinsic concentration of
electron hole pair
is ~ 1019/m3, the concentration of
electrons in the specimen is: -
(1) 1017/m3 (2) 1015/m3
(3) 10 /m
4 3 (4) 102/m3
6. In the circuit, if the forward
voltage drop for the diode is 0.5 V,
the current will be: -

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ASSERTION AND REASONING -WORKSHEET 14.9

Directions: These questions consist of two statements, each printed as
Assertion and Reason. While answering these questions, you are required to
choose any one of the following four responses.
(a) Both Assertion and Reason are correct and the Reason is a correct
explanation of the Assertion.
(b) Both Assertion and Reason are correct but Reason is not a correct
explanation of the Assertion.
(c) Assertion is correct, Reason is incorrect
(d) Both Assertion and Reason are correct.

1. A: The conductivity of an intrinsic semiconductor at zero kelvin is zero.

R: The bond strength of the semiconductor at zero kelvin is much higher as
compared to the bond strength at room temperature.
2. A: The conductivity of a pure semiconductor increases on doping.
R: Doping causes the reduction in bond strength.
3. A: Semiconductors do not obey Ohm’s law.
R: In semiconductors the rate of flow of charge not only depends on the
applied electric field but also on the availability of charge carriers.
4. A: When a pure semiconductor is doped with a pentavalent impurity, the
number of conduction electrons is increased while the number of holes is
decreased.
R: Some of the holes get recombined with the conduction electrons as the
concentration of the conduction electrons is increased.
5. A: The energy gap between the valence band and conduction band is greater
in silicon than in germanium.
R: Thermal energy produces fewer minority carriers in silicon than in
germanium.
6. A : If the temperature of a semiconductor is increased then its resistance
decreases.
R : The energy gap between conduction band and valence band is very
small.
7. A : When two semiconductor of p and n type are brought in contact, they
form p-n junction which act like a rectifier.
R: A rectifier is used to convent alternating current into direct current.
8. A: The drift current in a p-n junction is from the n-side to the p-side.
R: It is due to free electrons only.
ANSWERS

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1 2 3 4 5 6 7

c c a a b a b

TAKE A TRIAL – SEMICONDUCTORS

1 C, Si and Ge have same lattice structure. Why is C insulator while Si and Ge 1 M
intrinsic semiconductors?

2 Suppose a pure Si crystal has 5 x 1028 atoms m-3. It is doped by 1 ppm concentration 3 M
of pentavalent As. Calculate the number of electrons and holes. Given that n i = 1.5
x 1016 m-3.
3 Can we take one slab of p-type semiconductor and physically join it to another n- 1 M
type semiconductor to get p-n junction?

4 In half-wave rectification, what is the output frequency if the input frequency is 50 2 M

Hz. What is the output frequency of a full-wave rectifier for the same input
frequency?
5 To make a p-type semiconductor, an intrinsic semiconductor is doped with __________. 1 M
a) phosphorus b) antimony c) aluminium d) arsenic

6 In an n-type silicon , which of the following statement is true: 1M

(a) Electrons are majority carriers and trivalent atoms are the dopants
(b) Electrons are minority carriers and pentavalent atoms are the dopants.
(c) Holes are minority carriers and pentavalent atoms are the dopants.
(d) Holes are majority carriers and trivalent atoms are the dopants.

7 Which is reverse biased diode? 1M

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8 Which of these graphs shows potential difference between p -side and n -side of a 1 M
p−n junction in equilibrium?

9 The diode shown in the circuit is a silicon diode. Determine the potential difference 1 M
between the points A and B will be:
a) 6V b) 0.6V c) 0.7V d) 0V

10 Silicon is doped with which of the following to obtain P type semiconductor 1M

a) Phosphorus
b) Gallium
c) Germanium
d) Bismuth

11 When a forward bias is applied to a p-n junction, it 1M

a) Raises the potential barrier.
b) Reduces the majority carrier current to zero.
c) Lowers the potential barrier.
d) None of the above.

12 In the forward bias arrangement of a PN-junction diode 1M

a) The N-end is connected to the positive terminal of the battery
b) The P-end is connected to the positive terminal of the battery
c) The direction of current is from N-end to P-end in the diode
d) The P-end is connected to the negative terminal of battery
13 A semiconductor is cooled from T1K to T2K. Its resistance 1M
a) Will decrease
b) Will increase
c) Will first decrease and then increase
d) Will not change

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14 At what temperature would an intrinsic semiconductor behave like a perfect 1 M

insulator?
15 Draw the circuit diagram of a full wave and half wave rectifier and state how do they 5 M
work?

16 Assuming that the resistance of the meters are negligible, what will be the readings 2 M
of the ammeters A1 and A2 in the circuit shown in figure.

17 Draw the energy band diagram when intrinsic semiconductor (Ge) is doped with 2 M
impurity atoms of Antimony (Sb). Name the extrinsic semiconductor so obtained
and majority charge carriers in it.

18 Draw the energy band diagrams of – i) a Metal ii) a semiconductor 2M

19 If each diode in Figure has a forward bias resistance of 25 Ω and infinite resistance in 2 M
reverse bias, what will be the values of the current I1 , I2 , I3 and I4

20 Distinguish between an intrinsic semiconductor and a p-type semiconductor. Give 2 M

reason why a p-type semiconductor crystal is electrically neutral , although ne >> ne ?

21 An AC signal is fed into two circuits X and Y and the corresponding output in the 3 M
two cases have the waveforms as shown in below.
a) Identify the circuits X and Y. Draw their labelled circuit diagrams.

b) Briefly explain the working of circuit Y

a) How does the output waveform from circuit Y get modified when a capacitor is
c) connected across the output terminals parallel to the load resistor?

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22 Draw the circuit diagram showing forward and reverse bias of a junction diode and also 3 M
draw the v-I characteristics.

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