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Tungsten and Aluminum Interconnection Techniques

The document outlines the processes involved in tungsten local interconnection, including wafer cleaning, sputtering, chemical vapor deposition (CVD), and chemical mechanical polishing (CMP). It also discusses early aluminum interconnection methods and the challenges of multi-level interconnections, emphasizing the use of tungsten for filling narrow contact and via holes. Key steps in the interconnection process include dielectric CVD, photolithography, and metal etching.

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yongfeng jia
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11 views10 pages

Tungsten and Aluminum Interconnection Techniques

The document outlines the processes involved in tungsten local interconnection, including wafer cleaning, sputtering, chemical vapor deposition (CVD), and chemical mechanical polishing (CMP). It also discusses early aluminum interconnection methods and the challenges of multi-level interconnections, emphasizing the use of tungsten for filling narrow contact and via holes. Key steps in the interconnection process include dielectric CVD, photolithography, and metal etching.

Uploaded by

yongfeng jia
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Tungsten Local Interconnection

• CMP PSG
• Wafer clean (a)
• Local interconnection mask (a)
• Etch PSG
• Strip photoresist
• Wafer clean (b) PSG
STI n+ n+ USG p+ p+
• Argon sputtering clean (b) P-Well N-Well
P-Epi
P-Wafer
• Sputtering Ti
• Sputtering TiN Ti/TiN Barrier and Adhesion Layer

• CVD TiN PSG Tungsten


STI n+ n+ USG p+ p+
• TiN treatment (c) P-Well N-Well
P-Epi
• CVD Tungsten (c) P-Wafer

• CMP Tungsten Ti/TiN Barrier and Adhesion Layer


• CMP titanium and titanium nitride (d) PSG Tungsten
n+
n+ USG p+ p+
• Wafer clean (d) STI P-Well N-Well
P-Epi
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] P-Wafer 121
Mask 10: Local Interconnection

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 122


Strip Photoresist/Clean

PSG
STI n+ n+ USG p+ p+
P-Well N-Well
P-Epi
P-Wafer
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 123
PVD Ti/TiN and CVD TiN/W

Ti/TiN Barrier and Adhesion Layer

PSG Tungsten

STI n+ n+ USG p+ p+
P-Well N-Well
P-Epi
P-Wafer
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 124
CMP W/TiN/Ti, Clean

Ti/TiN Barrier and Adhesion Layer

PSG Tungsten

STI n+ n+ USG p+ p+
P-Well N-Well
P-Epi
P-Wafer
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 125
Early Global Interconnection
• Oxide CVD
• Photolithography, oxide etch, and PR strip
• Metal PVD
• Photolithography, metal etch, and PR strip
– Oxide etch forms contact or via holes
– metal etch forms interconnection lines

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 126


Early Aluminum PSG

Interconnection (a) p+
n+ n+ SiO2
p+
p+
N-well
p+

P-type substrate
• CVD PSG (a)
PSG
• PSG reflow (b) SiO2
(b) p+ n+ n+
p+
p+ p+

• Wafer clean P-type substrate


N-well

• Contact hole mask PSG


SiO2
• Etch PSG (c) p +
n+ n+
p+
p+ p+
N-well
• Strip photoresist (c) P-type substrate

• Wafer clean Al ·Si


PSG
SiO2
• Deposit Al alloy (d) (d) p+
n+ n+
p+
p+ p+
N-well
• Metal interconnection mask P-type substrate

• Etch metal Al ·Si


PSG
• Strip photoresist (e) (e) p+
n+ n+ SiO2
p+
p+ p+
N-well
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 127
• Metal anneal P-type substrate
Multi-level Interconnection
• Earlier interconnection has rough surface
• problems in photolithography and metal PVD
• Tungsten to fill narrow contact and via holes

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 128


Multi-level Interconnection
• The basics interconnection process steps:
– Dielectric CVD and planarization
– Photolithography, oxide etch, and PR strip
– W CVD, bulk W removal
– Metal stack PVD,
– Photolithography, oxide etch, and PR strip
• PSG or BPSG for PMD and USG for IMD

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 129


Multi-level Interconnection
• Dielectric CMP for planarization
• W CMP to removal bulk tungsten
• Metal stack: Ti welding layer, Al·Cu alloy,
and TiN ARC
• Metal etch defines metal interconnection lines

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 130

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