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Advanced Semiconductor Fabrication Techniques

The document discusses the advantages of using metal gates in transistors, highlighting their lower resistivity and potential to enhance device speed. It outlines a possible future transistor manufacturing process involving metal and high-κ dielectric gates. Various fabrication steps, such as ion implantation and etching processes, are also mentioned.

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yongfeng jia

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0% found this document useful (0 votes)

29 views10 pages

Advanced Semiconductor Fabrication Techniques

Uploaded by

yongfeng jia

We take content rights seriously. If you suspect this is your content, claim it here.

Available Formats

Download as PDF, TXT or read online on Scribd

Metal Gate

• Lower resistivity
• Help to improve device speed

• A possible future transistor making process

• Metal and high-κ dielectric gate

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 101

Strip Photoresist

Polysilicon

STI STI

P-well

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 102

Extension Ion Implantation

STI STI

P-well

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 103

Oxide/Nitride Etch Back,

STI STI

P-well

Deposit (Ta2O5) and RTA

Ta2O5

PSG PSG

STI STI

P-well

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 110

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Advanced Semiconductor Fabrication Techniques

Uploaded by

Advanced Semiconductor Fabrication Techniques

Uploaded by

Metal Gate

• A possible future transistor making process

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 101

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 102

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 103

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 104

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 105

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 106

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 107

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 108

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 109

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 110

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