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Advanced Transistor Fabrication Techniques

The document outlines advanced techniques in semiconductor manufacturing, focusing on the processes of transistor making, including the use of metal gates and self-aligned gates. It details various steps such as wafer cleaning, photolithography, doping, and oxidation, which are critical for creating efficient transistors. The information is presented by Hong Xiao, Ph.D., and includes references to specific processes and materials used in the fabrication of MOSFETs.

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0% found this document useful (0 votes)
12 views10 pages

Advanced Transistor Fabrication Techniques

The document outlines advanced techniques in semiconductor manufacturing, focusing on the processes of transistor making, including the use of metal gates and self-aligned gates. It details various steps such as wafer cleaning, photolithography, doping, and oxidation, which are critical for creating efficient transistors. The information is presented by Hong Xiao, Ph.D., and includes references to specific processes and materials used in the fabrication of MOSFETs.

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yongfeng jia
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© All Rights Reserved
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Advanced STI: CMP Oxide, Stop

on Nitride

Nitride Nitride
USG
P-Well N-Well
P-Epi
P-Wafer
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 71
Advanced STI: Nitride Strip

STI USG
P-Well N-Well
P-Epi
P-Wafer
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 72
Transistor Making
• Metal gate
• Self-aligned gate
• Lightly doped drain (LDD)
• Threshold adjustment
• Anti punch-through
• Metal and high-κ gate MOS

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 73


Transistor Making: Metal Gate
• Form source/drain first
– Diffusion doping with silicon dioxide mask
• Align gates with source/drain, then gate
area was etched and gate oxide is grown
• The third mask define the contact holes
• The fourth mask form metal gates and
interconnections.
• Last mask defined the bonding pad
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 74
Wafer Clean, Field Oxidation,
and Photoresist Coating
Native Oxide

N-Silicon N-Silicon

Primer Field Oxide


Field Oxide

Photoresist

N-Silicon N-Silicon

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 75


Photolithography and Oxide Etch
Source/Drain Mask UV Light
Source/Drain Mask Field Oxide

Photoresist PR

N-Silicon N-Silicon

Field Oxide Field Oxide

PR PR

N-Silicon N-Silicon

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 76


Source/drain Doping and Gate
Oxidation
Field Oxide Field Oxide

p+ p+
N-Silicon N-Silicon

Field Oxide Gate Oxide Field Oxide

p+ p+
p+ p+
N-Silicon N-Silicon

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 77


Contact, Metallization, and
Passivation
Gate Oxide Al·Si Field Oxide
Gate Oxide Field Oxide

p+ p+ p+ p+
N-Silicon N-Silicon

Gate Oxide Field Oxide Gate Oxide CVD Cap Oxide

p+ p+ p+ p+
N-Silicon N-Silicon

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 78


Self-aligned Gate
• Introduction of ion implantation
• NMOS instead of PMOS
• Polysilicon replaced aluminum for gate
– Al alloy can’t sustain the high temperature
post-implantation anneal

Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 79


Self-aligned Gate
• Activation area for transistors making
• Gate oxidation and polysilicon deposition
• Gate mask defines the gate and local
interconnection.
• Transistors are made after ion implantation
and thermal annealing
• Advanced MOSFET are made in this way
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 80

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