Advanced STI: CMP Oxide, Stop
on Nitride
Nitride Nitride
USG
P-Well N-Well
P-Epi
P-Wafer
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 71
Advanced STI: Nitride Strip
STI USG
P-Well N-Well
P-Epi
P-Wafer
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 72
Transistor Making
• Metal gate
• Self-aligned gate
• Lightly doped drain (LDD)
• Threshold adjustment
• Anti punch-through
• Metal and high-κ gate MOS
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 73
Transistor Making: Metal Gate
• Form source/drain first
– Diffusion doping with silicon dioxide mask
• Align gates with source/drain, then gate
area was etched and gate oxide is grown
• The third mask define the contact holes
• The fourth mask form metal gates and
interconnections.
• Last mask defined the bonding pad
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 74
Wafer Clean, Field Oxidation,
and Photoresist Coating
Native Oxide
N-Silicon N-Silicon
Primer Field Oxide
Field Oxide
Photoresist
N-Silicon N-Silicon
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 75
Photolithography and Oxide Etch
Source/Drain Mask UV Light
Source/Drain Mask Field Oxide
Photoresist PR
N-Silicon N-Silicon
Field Oxide Field Oxide
PR PR
N-Silicon N-Silicon
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 76
Source/drain Doping and Gate
Oxidation
Field Oxide Field Oxide
p+ p+
N-Silicon N-Silicon
Field Oxide Gate Oxide Field Oxide
p+ p+
p+ p+
N-Silicon N-Silicon
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 77
Contact, Metallization, and
Passivation
Gate Oxide Al·Si Field Oxide
Gate Oxide Field Oxide
p+ p+ p+ p+
N-Silicon N-Silicon
Gate Oxide Field Oxide Gate Oxide CVD Cap Oxide
p+ p+ p+ p+
N-Silicon N-Silicon
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 78
Self-aligned Gate
• Introduction of ion implantation
• NMOS instead of PMOS
• Polysilicon replaced aluminum for gate
– Al alloy can’t sustain the high temperature
post-implantation anneal
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 79
Self-aligned Gate
• Activation area for transistors making
• Gate oxidation and polysilicon deposition
• Gate mask defines the gate and local
interconnection.
• Transistors are made after ion implantation
and thermal annealing
• Advanced MOSFET are made in this way
Hong Xiao, Ph. D. [Link]/HongXiao/[Link] 80