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Power Amplifiers and Output Stages

Chapter 8 of 'Microelectronics' by Donald A. Neamen focuses on output stages and power amplifiers, detailing the characteristics and analysis of BJT and MOSFET power transistors. It defines various classes of power amplifiers, including class-A and class-AB, and discusses their maximum power efficiency and design considerations. The chapter also covers thermal management through heat sinks and safe operating areas for transistors.

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0% found this document useful (0 votes)
7 views51 pages

Power Amplifiers and Output Stages

Chapter 8 of 'Microelectronics' by Donald A. Neamen focuses on output stages and power amplifiers, detailing the characteristics and analysis of BJT and MOSFET power transistors. It defines various classes of power amplifiers, including class-A and class-AB, and discusses their maximum power efficiency and design considerations. The chapter also covers thermal management through heat sinks and safe operating areas for transistors.

Uploaded by

parisacosta2005
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Microelectronics

Circuit Analysis and Design

Donald A. Neamen

Chapter 8

Output Stages and Power Amplifiers

Neamen Microelectronics, 4e Chapter 8-1


McGraw-Hill
In this chapter, we will:

❑ Describe the concept of a power amplifier.


❑ Describe the characteristics of BJT and MOSFET
power transistors
➢ analyze the temperature and heat flow
characteristics of devices using heat sinks.
❑ Define the various classes of power amplifiers
and determine the maximum power efficiency of
each class of amplifier.
➢ class-A power amplifiers.
➢ class-AB power amplifiers.
❑ Design an output stage using power MOSFETs as
the output devices.
Neamen Microelectronics, 4e Chapter 8-2
McGraw-Hill
Typical dc Beta Characteristics
for 2N3055

Neamen Microelectronics, 4e Chapter 8-3


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-4
McGraw-Hill
Safe Operating Area(SOA) for BJT
maximum rated power

The safe operating area of a bipolar transistor plotted on: (a) linear scales and
(b) logarithmic scales

Neamen Microelectronics, 4e Chapter 8-5


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-6
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-7
McGraw-Hill
Interdigitated BJT:
Top and Cross-Sectional Views

Neamen Microelectronics, 4e Chapter 8-8


McGraw-Hill
Typical Characteristics
for High-Power MOSFET

Neamen Microelectronics, 4e Chapter 8-9


McGraw-Hill
High-Power MOSFET Structures

VMOS DMOS HEXMOS

Neamen Microelectronics, 4e Chapter 8-10


McGraw-Hill
Drain-to-Source
Resistance
Versus ID

Neamen Microelectronics, 4e Chapter 8-11


McGraw-Hill
2 Packaging Schemes and
Typical Heat Sink

Neamen Microelectronics, 4e Chapter 8-12


McGraw-Hill
Electrical Equivalent Circuit:
Heat Flow From Device to Ambient

Neamen Microelectronics, 4e Chapter 8-13


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-14
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-15
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-16
McGraw-Hill
Power Derating Curve

T j ,max − Tcase
PD ,max =
 dev −case

Neamen Microelectronics, 4e Chapter 8-17


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-18
McGraw-Hill
IC Versus Time Characteristics

class-A class-B

class-AB
class-C

Neamen Microelectronics, 4e Chapter 8-19


McGraw-Hill
Class-A Common-Emitter Amplifier

 (max)  25%
Neamen Microelectronics, 4e Chapter 8-20
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-21
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-22
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-23
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-24
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-25
McGraw-Hill
Class-B Complementary Push-Pull
Output Stage

Neamen Microelectronics, 4e Chapter 8-26


McGraw-Hill
Voltage Transfer Characteristics:
Complementary Push-Pull Output Stage

Neamen Microelectronics, 4e Chapter 8-27


McGraw-Hill
Crossover Distortion:
Complementary Push-Pull Output Stage

Neamen Microelectronics, 4e Chapter 8-28


McGraw-Hill
Effective Load Line:
Ideal Class-B Output Stage

Neamen Microelectronics, 4e Chapter 8-29


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-30
McGraw-Hill
Average Power Dissipation Versus Peak
Output Voltage:
Class-B Output Stage

2
VCC
PQn (max) = 2
 RL
 (max)  78.5%

Neamen Microelectronics, 4e Chapter 8-31


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-32
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-33
McGraw-Hill
Bipolar Class-AB Output Stage

Neamen Microelectronics, 4e Chapter 8-34


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-35
McGraw-Hill
Characteristics of Class-AB Output Stage

Neamen Microelectronics, 4e Chapter 8-36


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-37
McGraw-Hill
MOSFET Class-AB Output Stage

Neamen Microelectronics, 4e Chapter 8-38


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-39
McGraw-Hill
Effective AC Load Line:
Class-C Amplifier

Neamen Microelectronics, 4e Chapter 8-40


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-41
McGraw-Hill
Inductively Coupled Class-A Amplifier

Neamen Microelectronics, 4e Chapter 8-42


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-43
McGraw-Hill
Transformer-Coupled Common Emitter

Neamen Microelectronics, 4e Chapter 8-44


McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-45
McGraw-Hill
Neamen Microelectronics, 4e Chapter 8-46
McGraw-Hill
Transformer-Coupled Emitter Follower

Neamen Microelectronics, 4e Chapter 8-47


McGraw-Hill
Class-AB Output
Stage:
Q-Point Established
by Diodes

Neamen Microelectronics, 4e Chapter 8-48


McGraw-Hill
Class-AB Output
Stage:
VBE Multiplier Bias

Neamen Microelectronics, 4e Chapter 8-49


McGraw-Hill
Class-AB Output
Stage:
Input Buffer BJTs

Neamen Microelectronics, 4e Chapter 8-50


McGraw-Hill
Class-AB Output
Stage:
Darlington Pair

Neamen Microelectronics, 4e Chapter 8-51


McGraw-Hill

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