Microelectronics
Circuit Analysis and Design
Donald A. Neamen
Chapter 2
Diode Circuits
Neamen Microelectronics, 4e Chapter 2-1
McGraw-Hill
In this chapter, we will:
q Determine the operation and characteristics of
diode rectifier circuits, which is the first stage of
the process of converting an ac signal into a dc
signal in the electronic power supply.
q Apply the characteristics of the Zener diode to a
Zener diode voltage regulator circuit.
q Apply the nonlinear characteristics of diodes to
create waveshaping circuits known as clippers
and clampers.
q Examine the techniques used to analyze circuits
that contain more than one diode.
q Understand the operation and characteristics of
specialized photodiode and light-emitting diode
circuits.
Neamen Microelectronics, 4e Chapter 2-2
McGraw-Hill
Diode Spice Model
Rs represents the inevitable series
resistance of a real device structure. The
current controlled current source
models the ideal exponential behavior
of the diode. Capacitor C includes
depletion-layer capacitance for the
reverse-bias region as well as diffusion
capacitance associated with the junction
under forward bias.
Typical default values: Saturation
current IS = 10 fA, Rs = 0 W, transit
time TT = 0 seconds, N = 1
Neamen Microelectronics, 4e Chapter 2-3
McGraw-Hill
Basic Diode Layout
Neamen Microelectronics, 4e Chapter 2-4
McGraw-Hill
Diode dc Circuit Analysis: Basics
The loop equation for the diode circuit is:
V = I D R + VD
This is also called the load line for the
diode. The solution to this equation can
be found by:
V and R may represent the Thévenin • Graphical analysis using the load-line
equivalent of a more complex 2- method.
terminal network. The objective of • Analysis with the diode’s mathematical
diode dc circuit analysis is to find the model.
quiescent operating point for the • Simplified analysis with the ideal diode
diode. model.
• Simplified analysis using the constant
Q-Point = (ID, VD) voltage drop (CVD) model.
Neamen Microelectronics, 4e Chapter 2-5
McGraw-Hill
EXAMPLE
Load-Line Analysis
Problem: Find diode Q-point
Given data: V = 10 V, R = 10 kW.
Analysis:
10 = I D 104 + VD
To define the load line we use,
For VD = 0, ID = (10V 10kΩ) = 1 mA
For VD = 5V, ID = (5V 10kΩ) = 0.5 mA
These points and the resulting load
line are plotted. Q-point is given
€ by the intersection of the load line
and diode characteristic:
Q-point = (0.95 mA, 0.6 V)
Neamen Microelectronics, 4e Chapter 2-6
McGraw-Hill
EXAMPLE
Analysis using Diode Mathematical Model
•Make initial guess VD0 .
Problem: Find the Q-point for a given •Evaluate f and its derivative f’ for this
diode characteristic. value of VD.
Given data: IS = 10-13A, n = 1, VT = 0.025V •Calculate new guess for VD using
Analysis:
V 1
= V 0
−
( )
f VD
0
( . VD + % D D
f (V
0
D )
−13
I D = I S &exp,, )) − 1# = 10 [exp(40VD )− 1] #
' - nVT * $ •Repeat steps 2 and 3 till convergence.
∴10 = 10410−13 [exp(40VD )− 1]+ VD Using a spreadsheet we get :
The solution is given by a transcendental Q-point = ( 0.9426 mA, 0.5742 V)
€
equation. A numerical answer can be found Since, usually we don’t have accurate
by using Newton’s iterative method. saturation current values and significant
tolerances exist for sources and passive
f = 10 − 10410−13 [exp(40VD )− 1]− VD components, we need answers precise to
only 2 or 3 significant digits.
Neamen Microelectronics, 4e Chapter 2-7
McGraw-Hill
Analysis using Ideal Model for Diode
If an ideal diode is forward-biased, the voltage
across the diode is zero. If an ideal diode is
reverse-biased, the current through the diode is
zero.
vD = 0 for iD > 0 and iD = 0 for vD < 0
Thus, the diode is assumed to be either on or off.
Analysis is conducted in following steps:
• Select a diode model.
• Identify anode and cathode of the diode and
label vD and iD.
• Guess diode’s region of operation from circuit.
• Analyze circuit using diode model appropriate
for assumed region of operation.
• Check results to check consistency with
assumptions.
Neamen Microelectronics, 4e Chapter 2-8
McGraw-Hill
EXAMPLE
Analysis using Ideal Model for Diode
Since source is forcing current backward
Since source appears to force positive through diode assume, diode is off.
current through diode, assume diode is on. Hence ID = 0 . Loop equation is:
(10 − 0)V 10 + VD + 10 4 ID = 0
ID = = 1 mA | ID ≥ 0
10kΩ
Our assumption is correct, and the VD = −10V | VD < 0
Q-Point = (1 mA, 0V) Our assumption is correct and the
Q-Point = (0, -10 V)
€
€
Neamen Microelectronics, 4e Chapter 2-9
McGraw-Hill
Analysis using Constant Voltage Drop Model
for Diode
Analysis:
Since the 10-V source appears to force positive
current through the diode, assume diode is on.
(10 − Von )V
ID =
10kΩ
vD = Von for iD > 0 and (10 − 0.6)V
vD = 0 for vD < Von. = = 0.940 mA
10kΩ
Neamen Microelectronics, 4e Chapter 2-10
McGraw-Hill€
EXAMPLE
Two-Diode Circuit Analysis
Analysis: The ideal diode model is chosen. Since the
15-V source appears to force positive current through
D1 and D2, and the -10-V source is forcing positive
current through D2, assume both diodes are on.
Since the voltage at node D is zero due to the short
circuit of ideal diode D1,
(15 − 0)V
I1 = = 1.50 mA
10kΩ
0 − (−10V )
ID 2 = = 2.00 mA
5kΩ
I1 = ID1 + ID 2 | ID1 = 1.50 − 2.00 = −0.500 mA
The Q-points are (-0.5 mA, 0 V) and (2.0 mA, 0 V)
But, ID1 < 0 is not allowed by the diode, so try again.
€
Neamen Microelectronics, 4e Chapter 2-11
McGraw-Hill
EXAMPLE
Two-Diode Circuit Analysis (cont.)
Since the current in D1 is zero, ID2 = I1,
15−10,000I1 − 5,000ID2 −(−10)= 0
25V
I1 = =1.67 mA
15,000Ω
VD1 =15−10,000I1 =15−16.7 = −1.67 V
Analysis: Since current in
D2 is valid, but that in D1 is
€ Q-Points are D1 : (0 mA, -1.67 V): off
not, the second guess is D1
off and D2 on. D2 : (1.67 mA, 0 V) : on
Now, the results are consistent with the
assumptions.
Neamen Microelectronics, 4e Chapter 2-12
McGraw-Hill
EXMPLE
Analysis of Diodes in Reverse Breakdown
Choose 2 points (0 V, -4 mA) and (-5 V, -3
mA) to draw the load line. It intersects the i-v
characteristic at the Q-point: (-2.9 mA, -5.2 V).
Using the piecewise linear model:
IZ = −ID > 0
20− 5100IZ − 5 = 0
(20− 5)V
IZ = = 2.94 mA
5100Ω
Using load-line analysis: Since IZ > 0 (ID < 0), the solution is
−20=VD + 5000ID consistent
€ with Zener breakdown.
Neamen
€
Microelectronics, 4e Chapter 2-13
McGraw-Hill
EXAMPLE
Voltage Regulator Using the Zener Diode
VS −VZ (20− 5)V
IS = = = 3 mA
R 5kΩ
V 5V
IL = Z = =1 mA | IZ = IS − IL = 2 mA
RL 5kΩ
For proper regulation, Zener current IZ must
€ be positive. If the Zener current < 0, the
Zener diode no longer controls the voltage
across the load resistor and the voltage
regulator is said to have “dropped out of
The Zener diode keeps the regulation”.
voltage across load resistor VS #
%1 1
&
R
IZ = −VZ % + (( > 0 | RL > # =R
RL constant. For Zener R $
R R L' %V
&
(
min
% S −1(
breakdown operation, IZ > 0. %V
% (
(
$ Z '
Neamen Microelectronics, 4e Chapter 2-14
McGraw-Hill
€
EXAMPLE
Voltage Regulator Including Zener Resistance
Problem: Find the output voltage
and Zener diode current for a Zener
diode regulator.
Given data: VS = 20 V, R = 5 kW,
RZ = 0.1 kW, VZ = 5 V
Analysis: The output voltage is
now a function of the current
through the Zener diode. VZ − 20V VL − 5V VL
+ + =0
5000Ω 100Ω 5000Ω
VL = 5.19 V
VL − 5V 5.19V− 5V
IZ = = =1.9 mA > 0
100Ω 100Ω
€
Neamen Microelectronics, 4e Chapter 2-15
McGraw-Hill
Line and Load Regulation
Line regulation characterizes how sensitive the output voltage is to input
voltage changes.
dVL
Line Regulation= mV/V
dVS
RZ
For a fixed load current, Line Regulation =
R+ RZ
Load regulation characterizes how sensitive the output voltage is to
changes
€
in load current withdrawn from regulator.
dV
Load Regulation= L Ω
dI L
For changes in load current, Load Regulation= −$&% RZ R')(
Load regulation is the Thévenin equivalent resistance looking back
into€ the regulator from the load terminals.
Neamen Microelectronics, 4e Chapter 2-16
McGraw-Hill
Rectifier Circuits
• A basic rectifier converts an ac voltage to a pulsating dc voltage.
• A filter then eliminates ac components of the waveform to
produce a nearly constant dc voltage output.
• Rectifier circuits are used in virtually all electronic devices to
convert the 120-V 60-Hz ac power line source to the dc voltages
required for operation of electronic devices.
• In rectifier circuits, the diode state changes with time and a given
piecewise linear model is valid only for a certain time interval.
Neamen Microelectronics, 4e Chapter 2-17
McGraw-Hill
Half-Wave Rectifier Circuit with Resistive
Load
For the positive half-cycle of the input, the source forces positive current
through the diode, the diode is on, and vO = vS (for an ideal diode).
During the negative half cycle, negative current can’t exist in the diode.
The diode is off, current in resistor is zero, and vO =0 .
Neamen Microelectronics, 4e Chapter 2-18
McGraw-Hill
Half-Wave Rectifier Circuit with Resistive
Load (cont.)
Using the CVD model, during the on-state of the
diode vO = vS - Von = (VP sinwt)- Von. The output
voltage is zero when the diode is off.
Often a step-up or step-down transformer is used
to convert the 120-V, 60-Hz voltage available
from the power line to the desired ac voltage
level as shown.
Time-varying components in the rectifier output
are removed using a filter capacitor.
Neamen Microelectronics, 4e Chapter 2-19
McGraw-Hill
Peak Detector Circuit
As the input voltage rises, the diode is on,
and the capacitor (initially discharged)
charges up to the input voltage minus the
diode voltage drop.
At the peak of the input voltage, the diode
current tries to reverse, and the diode cuts
off. The capacitor has no discharge path
and retains a constant voltage providing a
constant output voltage:
Vdc = VP - Von
Neamen Microelectronics, 4e Chapter 2-20
McGraw-Hill
Half-Wave Rectifier Circuit with RC Load
As the input voltage rises during the first quarter
cycle, the diode is on and the capacitor (initially
discharged) charges up to the peak value of the
input voltage.
At the peak of the input, the diode current tries
to reverse, the diode cuts off, and the capacitor
discharges exponentially through R. Discharge
continues till the input voltage exceeds the
output voltage which occurs near the peak of
next cycle. This process then repeats once every
cycle.
This circuit can be used to generate negative
output voltage if the top plate of capacitor is
grounded instead of bottom plate. In this case,
Vdc = -(VP - Von)
Neamen Microelectronics, 4e Chapter 2-21
McGraw-Hill
Half-Wave Rectifier Circuit with RC Load
(cont.)
The output voltage is not constant as in an ideal peak detector, but has a
ripple voltage Vr.
The diode conducts for a short time DT called the conduction interval
during each cycle, and its angular equivalent is called the conduction
angle qc.
T %' ΔT (* (VP −Von ) T
Vr ≅ (VP −Von ) '1− *
≅
RC & T ) R C
1 2T (VP −Von ) = 1 2Vr
ΔT ≅ ω
RC VP ω VP
2Vr
θc = ωΔT =
VP
Neamen € Microelectronics, 4e Chapter 2-22
McGraw-Hill
EXAMPLE
Half-Wave Rectifier Analysis
Problem: Find the dc output voltage, output current, ripple voltage,
conduction interval, and conduction angle for a half-wave rectifier.
Given data: secondary voltage Vrms = 12.6 (60 Hz), R = 15 W,
C = 25,000 µF, Von = 1 V
Analysis: V =V −V = (12.6 2 −1)V =16.8 V
dc P on
VP −Von 16.8V
Idc = = =1.12 A
R 15Ω
(V −V ) T
Vr ≅ P on = 0.747 V
R C
Using discharge interval T = 1/60 s, 2Vr
θc = ωΔT = = 0.290 rad =16.6o
€ VP
θ θ
ΔT = ωc = c = 0.29 = 0.769 ms
2πf 120π
Neamen Microelectronics,
€ 4e Chapter 2-23
McGraw-Hill
Peak Diode Current
In rectifiers, nonzero current exists in the
diode for only a very small fraction of
period T, yet an almost constant dc current
flows out of the filter capacitor to load.
The total charge lost from the filter
capacitor in each cycle is replenished by the
diode during a short conduction interval
causing high peak diode currents. If the
repetitive current pulse is modeled as a
triangle of height IP and width DT,
IP = Idc 2T = 48.6 A
ΔT
using the values from the previous example.
€
Neamen Microelectronics, 4e Chapter 2-24
McGraw-Hill
Surge Current
In addition to the peak diode currents, there is an even larger current
through the diode called the surge current that occurs when power is
first turned on.
During first quarter cycle, current through diode is approximately
$ '
d
id (t)= ic (t)≅ C & VP sinωt )) = ωCVP cosωt
&
% dt (
The peak value of this initial surge current occurs at t = 0+:
€ ISC = ωCVP =168 A
using values from previous example.
€
Actual values of surge current won’t be nearly as large as predicted
above because of the neglected series resistances associated with both the
rectifier diode and transformer.
Neamen Microelectronics, 4e Chapter 2-25
McGraw-Hill
Peak Inverse Voltage Rating
The peak inverse voltage (PIV) rating of
the rectifier diode is the diode
breakdown voltage.
When the diode is off, the reverse-bias
across the diode is Vdc - vS. When vS
reaches its negative peak,
PIV ≥Vdc − vsmin =VP −Von −(−VP )≅ 2VP
€
The PIV value corresponds to the
minimum value of Zener breakdown
voltage required for the rectifier diode.
Neamen Microelectronics, 4e Chapter 2-26
McGraw-Hill
Diode Power Dissipation
Average power dissipation in a diode is given by
1T 1T I
PD = ∫ v D (t)iD (t)dt = ∫ Von iD (t)dt =Von P ΔT ≅Von Idc
T0 T0 2 T
The simplification is done by assuming a triangular approximation for the
€
diode current and the voltage across the diode is constant at Vdc.
Average power dissipation in the diode series resistance is given by
1T 2 1 4
PD = ∫ iD (t)RS dt = ID2 RS ΔT = T Idc
2 R
T0 3 T 3 ΔT S
This power dissipation can be reduced by minimizing peak current
€
through the use of a minimum size of filter capacitor or by using full-
wave rectifiers.
Neamen Microelectronics, 4e Chapter 2-27
McGraw-Hill
Full-Wave Rectifiers
Full-wave rectifiers cut capacitor discharge
time in half and require half the filter
capacitance to achieve a given ripple voltage.
All specifications are the same as for half-
wave rectifiers.
Reversing polarity of the diodes gives a full-
wave rectifier with negative output voltage.
Neamen Microelectronics, 4e Chapter 2-28
McGraw-Hill
Full-Wave Rectifier Equations
(VP −Von ) T
Vdc ≅VP −Von Vr ≅
R 2C
2Vr T
T (VP −Von ) 1 2Vr θc = ωΔT = I =I
1
ΔT ≅ ω =ω VP P dc ΔT
RC VP VP
PIV = 2V
P
€
Neamen Microelectronics, 4e Chapter 2-29
€
McGraw-Hill
Full-Wave Bridge Rectification
The requirement for a center-
tapped transformer in the full-
wave rectifier is eliminated
through use of 2 extra diodes. All
other specifications are the same
as for a half-wave rectifier except
PIV = VP.
Neamen Microelectronics, 4e Chapter 2-30
McGraw-Hill
Rectifier Topology Comparison
• Filter capacitors are a major factor in determining cost, size and weight
in design of rectifiers.
• For a given ripple voltage, a full-wave rectifier requires half the filter
capacitance as that in a half-wave rectifier. Reduced peak current can
reduce heat dissipation in diodes. Benefits of full-wave rectification
outweigh increased expenses and circuit complexity (an extra diode and
center-tapped transformer).
• The bridge rectifier eliminates the center-tapped transformer, and the
PIV rating of the diodes is reduced. Cost of extra diodes is negligible.
Neamen Microelectronics, 4e Chapter 2-31
McGraw-Hill
Rectifier Topology Comparison and Design
Tradeoffs
Rectifier Parameter Half-Wave Rectifier Full-Wave Rectifier Full-Wave Bridge Rectifier
Filter Capacitor VP − Von T VP − Von T VP − Von T
C= C= C=
Vr R Vr 2R Vr 2R
PIV Rating 2VP 2VP VP
Peak Diode€Current Highest €
IP Reduced IP/2 € Reduced IP/2
(Constant Vr)
€ € €
Surge Current Highest Reduced ( C) Reduced ( C)
Comments Least Complexity Smaller Capacitor Smaller Capacitor
Center-taped Transformer No Center-taped Transformer
Two Diodes Four Diodes
Neamen Microelectronics, 4e Chapter 2-32
McGraw-Hill
DESIGN EXAMPLE
Rectifier Design Analysis
Problem: Design a rectifier with given specifications.
Given data: Vdc = 15 V, Vr < 0.15 V, Idc = 2 A Assume: Von = 1 V.
Analysis: Use a full-wave bridge rectifier that needs a smaller value of filter
capacitance, smaller diode PIV rating, and no center-tapped transformer.
" %
VP V + 2Von 15+ 2 $T / 2' "
1 %'"$ 1 %'
V= = dc = V =12.0 Vrms | C = Idc $ ' = 2 A$
$
s'$ '
= 0.111 F
2 2 2 $ V ' #120 &# 0.15V &
$ '
# r &
1 2Vr 1 2(0.15V ) "
2 T
%" % "$
1/60%'&s
ΔT = = = 0.352 ms | IP = Idc $$ ''$$ '' = 2A #
= 94.7 A
ω VP 120π 17V # ΔT &# 2 & 0.352ms
Isurge = ωCVP =120π (0.111)(17)= 711 A | PIV =VP =17 V
Neamen Microelectronics, 4e Chapter 2-33
McGraw-Hill
Dynamic Switching Behavior of Diodes
The non-linear depletion-layer
capacitance of the diode prevents the
diode voltage from changing
instantaneously and determines turn-on
and recovery times. Both forward and
reverse current overshoot the final
values when the diode switches on and $
IF )
'
&
off as shown. Storage time is given by: τ S = τ T ln 1−
& )
&&
%
I ))
R(
Neamen Microelectronics,
€
4e Chapter 2-34
McGraw-Hill
Photo Diodes and Photodetectors
If the depletion region of a pn junction diode is illuminated with
light with sufficiently high frequency, photons can provide
enough energy to cause electrons to jump the semiconductor
bandgap to generate electron-hole pairs:
hc
EP = hυ = ≥ EG
λ
h =Planck’s constant = 6.626 x 10-34 J-s
u = frequency of optical€illumination
l = wavelength of optical illumination
c = velocity of light = 3 x 108 m/s
Photon-generated current can be used in photodetector circuits
to generate an output voltage
vO = iPHR
The diode is reverse-biased to enhance depletion-region width
and electric field. €
Neamen Microelectronics, 4e Chapter 2-35
McGraw-Hill
Solar Cells and Light-Emitting Diodes
In solar cell applications, optical illumination
is steady, and dc current IPH is generated. The
goal is to extract power from the cell, and the
i-v characteristics are plotted in terms of cell
current and cell voltage. For a solar cell to
supply power to an external circuit, the ICVC
product must be positive, and the cell should
be operated near the point of maximum output
power Pmax.
Light-Emitting Diodes (LEDs) use
recombination processes in the forward-biased
pn junction diode to produce light. When a
hole and electron recombine, an energy equal
to the bandgap of the semiconductor is
released as a photon.
Neamen Microelectronics, 4e Chapter 2-36
McGraw-Hill
Block Diagram
for ac to dc Converter
The diode rectifier, filter, and voltage regulator are diode circuits.
Neamen Microelectronics, 4e Chapter 2-37
McGraw-Hill
Problem-Solving Technique:
Diode Circuits
1. Determine the input voltage condition such
that the diode is conducting (on).
a. Find the output signal for this condition.
2. Determine the input voltage such that the
diode is not conducting (off).
a. Find the output signal for this condition.
Neamen Microelectronics, 4e Chapter 2-38
McGraw-Hill
Half-Wave Rectifier
Voltage Transfer
Characteristics
Neamen Microelectronics, 4e Chapter 2-39
McGraw-Hill
Signals of Half Wave Rectifier
Input voltage Output voltage
Diode voltage
Neamen Microelectronics, 4e Chapter 2-40
McGraw-Hill
Load Line Analysis
Load line when vS
is at its maximum
forward voltage.
Load line when vS
is at its most
negative value.
Neamen Microelectronics, 4e Chapter 2-41
McGraw-Hill
Load Line (con’t)
As vS varies with time, the load line also changes, which
changes the Q-point (vD and iD) of the diode.
Neamen Microelectronics, 4e Chapter 2-42
McGraw-Hill
Half-Wave Rectifier as
Battery Charger
Neamen Microelectronics, 4e Chapter 2-43
McGraw-Hill
Full-Wave Rectifier
Voltage transfer characteristics
Input and output waveforms
Neamen Microelectronics, 4e Chapter 2-44
McGraw-Hill
Full-Wave Bridge Rectifier
When vS is positive, D1 and D2 are turned on (a). When vS is negative, D3 and
D4 are turned on (b).
In either case, current flows through R in the same direction, resulting in an
output voltage, vO, shown in (c).
Neamen Microelectronics, 4e Chapter 2-45
McGraw-Hill
Full-Wave Bridge Rectifier
Neamen Microelectronics, 4e Chapter 2-46
McGraw-Hill
Output Voltage of Full-Wave Rectifier
with RC Filter
VM 1
The ripple on the ‘dc’ output is Vr = where f =
2 fRC 2TP
Neamen Microelectronics, 4e Chapter 2-47
McGraw-Hill
Output Voltage of Full-Wave Rectifier
with RC Filter
Dt 1 2Vr
=
T p VM
Diode conducts current for only a small portion of the period.
Neamen Microelectronics, 4e Chapter 2-48
McGraw-Hill
Equivalent Circuit During
Capacitance Charging Cycle
i C = -wCVM wt
iC , peak = +wCVM wDt
2Vr
wDt =
VM
Neamen Microelectronics, 4e Chapter 2-49
McGraw-Hill
PSpice Schematic of Diode
Bridge Circuit
Steady state output voltage for a
60Hz sine wave input with peak
value of 13.4V.
Neamen Microelectronics, 4e Chapter 2-50
McGraw-Hill
Demodulation of Amplitude-
Modulated Signal
Modulated input signal
Detector circuit
Demodulated output
signal
Neamen Microelectronics, 4e Chapter 2-51
McGraw-Hill
Voltage Doubler Circuit
Neamen Microelectronics, 4e Chapter 2-52
McGraw-Hill
Equivalent Circuits for
Input Cycles
Negative input cycle Positive input cycle
Neamen Microelectronics, 4e Chapter 2-53
McGraw-Hill
Voltage Regulator
VZ
IL =
RL
VPS - VZ
II =
Ri
IZ = II - IL
The characteristics of the Zener diode determines VL.
Neamen Microelectronics, 4e Chapter 2-54
McGraw-Hill
Design Example 2.5
The voltage regulator is to power a car radio at VL = 9 V from
an automobile battery whose voltage may vary between 11 and
13.6 V. The current in the radio will vary between 0 (off ) to
100 mA (full volume).
Neamen Microelectronics, 4e Chapter 2-55
McGraw-Hill
Design Example 2.5
Neamen Microelectronics, 4e Chapter 2-56
McGraw-Hill
Load Line Analysis
The reverse bias I-V is important for Zener diodes.
Neamen Microelectronics, 4e Chapter 2-57
McGraw-Hill
Voltage Rectifier with
nonzero Zener resistance
The Zener diode begins to conduct when VPS = VZ.
When VPS ≥ VZ: VL = VZ
IL = VZ/RL,, but VZ ≠ constant
I1 = (VPS – VZ)/Ri
IZ = I1 - IL
Neamen Microelectronics, 4e Chapter 2-58
McGraw-Hill
Voltage Transfer Characteristics of
Limiter Circuit
Neamen Microelectronics, 4e Chapter 2-59
McGraw-Hill
Single Diode Clipper
Neamen Microelectronics, 4e Chapter 2-60
McGraw-Hill
Additional
Diode
Clipper
Circuits
Neamen Microelectronics, 4e Chapter 2-61
McGraw-Hill
Parallel-Based Diode
Clipper Circuit
Neamen Microelectronics, 4e Chapter 2-62
McGraw-Hill
Series-Based
Diode Clipper
Circuits
Neamen Microelectronics, 4e Chapter 2-63
McGraw-Hill
Parallel-Based Clipper Circuit Using
Zener Diodes
Neamen Microelectronics, 4e Chapter 2-64
McGraw-Hill
Diode Clamper Circuit
Neamen Microelectronics, 4e Chapter 2-65
McGraw-Hill
Diode Clamper Circuit with Voltage
Source
Neamen Microelectronics, 4e Chapter 2-66
McGraw-Hill
Diode and Resistor In Series
Voltage shift between input and output voltages in transfer
characteristics is because the diode only conducts when v1 ≥ Vg.
Neamen Microelectronics, 4e Chapter 2-67
McGraw-Hill
Diode with Input Voltage Source
Output voltage is a constant when the diode is not conducting,
when v1 ≥ Vs - Vg.
Neamen Microelectronics, 4e Chapter 2-68
McGraw-Hill
2 Diode Circuit
Voltage transfer characteristics
Neamen Microelectronics, 4e Chapter 2-69
McGraw-Hill
Problem-Solving Technique:
Multiple Diode Circuits
1. Assume the state of the diode.
a. If assumed on, VD = Vg
b. If assumed off, ID = 0.
2. Analyze the ‘linear’ circuit with assumed
diode states.
3. Evaluate the resulting state of each diode.
4. If any initial assumptions are proven
incorrect, make new assumption and return
to Step 2.
Neamen Microelectronics, 4e Chapter 2-70
McGraw-Hill
Exercise problem
D1 is not on.
D2 is on.
This pins VO to -0.6V
Neamen Microelectronics, 4e Chapter 2-71
McGraw-Hill
Diode Logic Circuits:
2-Input OR Gate
V1 (V) V2 (V) VO (V)
0 0 0
5 0 4.3
0 5 4.3
5 5 4.3
Vg = 0.7V
Neamen Microelectronics, 4e Chapter 2-72
McGraw-Hill
Diode Logic Circuits:
2-Input AND Gate
V 1 V 2 V O
( V ) ( V ) ( V )
0 0 0
5 0 0
0 5 0
5 5 4.3
Vg = 0.7V
Neamen Microelectronics, 4e Chapter 2-73
McGraw-Hill
Photodiode Circuit
Neamen Microelectronics, 4e Chapter 2-74
McGraw-Hill
Optoisolator
Neamen Microelectronics, 4e Chapter 2-75
McGraw-Hill
Design DC Power Supply Circuit
Neamen Microelectronics, 4e Chapter 2-76
McGraw-Hill