CAMBRIDGE PUBLIC e- SCHOOL
CBSE [Link].: 1930426
KAVERIPATTINAM-635112
PROJECT FILE
BATCH: 2025 – 2026
ROLL NO :
STUDENT NAME : GAJENDER SINGH
SUBJECT : PHYSICS
REPORT ON PHENOMENON
OF
“P-N JUNCTION DIODE”
IN PARTIAL FULFILMENT OF THE
REQUIREMENT
FOR THE AWARD OF THE CLASS OF
PHYSICS
SUBMITTED BY
GAJENDER SINGH
UNDER THE GUIDENCE
OF Mr.K. BALACHANDAR, PGT (PHYSICS)
CAMBRIDGE PUBLIC e- SCHOOL, CBSE AFF. No.:1930426
KAVERIPATTINAM, KRISHNAGIRI-635112
BATCH: 2025 – 2026
TABLE OF CONTENT
BONAFIDE CERTIFICATE
ACKNOWLEDGEMENT
INTRODUCTION
PN JUNCTION
FORMATION OF PN JUNCTION
FORWARD BIAS
REVERSE BIAS
CHARACTERISTICS
APPLICATION
CONCLUSION
BIBLIOGRAPHY
BONAFIDE CERTIFICATE
THIS IS TO CERTIFY THAT THE PROJECT
TITLED
"REPORT ON PHENOMEN ON
“P-N JUNCTION DIODE”
is record of Bonafide work carried out by
GAJENDER SINGH of Class XII of Cambridge
Public e-School, CBSE Aff. No:1930426,
Kaveripattinam, Krishnagiri-635112 during the
year 2025-2026
SIGNATURE OF PRINCIPAL SIGNATURE
OF TEACHER
INTERNAL EXAMINEER EXTERNAL
EXAMINER
ACKNOWLEDGEMENT
I wish to express my sincere thanks to
[Link], Principal, Cambridge Public
e School, Kaveripattinam. For guiding me to
cause the successful outcome of this project
work.
I wish to express my deep and profound sense
of gratitude to my guide Mr.K.
BALACHANDAR, PGT (PHYSICS), For her
help and valuable guidance, comments and
suggestions.
I also place on record, our sincere gratitude to
one and all who directly or indirectly have lent
their helping hand in this venture.
INTRODUCTION
P-N junction diodes are semiconductor
devices formed by joining p-type and n-type
materials.
They allow current to flow in one direction
white blocking it in the opposite direction
.This unique property makes them essential
components in electronic circuits.
STRUCTURED OF P-N JUNCTION
DIODES
A Pn junction diode consists of two regions:
the p-type region. Which has an abundance
of holes, and the n-type region, which has an
abundance of electrons.
The junction between these two regions
creates an electric field that influences
charge carrier movement.
The physical structure is typically
encapsulated in a protective casing for
durability and insulation.
FORMATION OF P-N JUNCTION
A thin p-type silicon semiconductor sheet. If we
add a small amount of pentavalent impurity to
this, a part of the p-type Si will get converted to
n-type silicon. This sheet will now contain both
the p-type region and the n-type region and a
junction between these two regions. The
processes that follow after forming a P-N
junction are of two types diffusion and drift.
There is a difference in the concentration of
holes and electrons at the two sides of a
junction. The holes from the p-side diffuse to the
n-side, and the electrons from the n-side diffuse
to the p-side. These give rise to a diffusion
current across the junction.
WORKING PRINCIPLE
When a voltage is applied in the forward
direction, the electric field is neutralized,
allowing current to flow.
In reverse bias, the electric field widens,
preventing current from flowing through the
diode.
FORWARD BIAS
Forward bias occurs when the p-type side is
connected to the positive terminal of a
voltage source.
This connection reduces the barrier
potential, enabling charge carriers to
recombine and create current flow.
The diode conducts current, and the voltage
drop across the diode remains relatively
constant.
REVERSE BIAS
Reverse bias occurs when the p-type side is
connected to the negative terminal of a
voltage source
This application increases the barrier
potential, preventing current flow through
the diode
A small leakage current may still flow, but it
is typically negligible and does not affect
circuit performance
CHARACTERISTICS
The current-voltage (I-V) characteristics of a
P-N junction diode illustrate its behaviour
under different biases.
In the forward region, current increases
exponentially with applied voltage until it
reaches the maximum current.
In the reverse region, a small leakage
current flows until breakdown occurs at a
high reverse voltage.
APPLICATIONS OF P-N JUNCTION
DIODES
P-N junction diodes are widely used in
rectifiers to convert alternating current (AC)
to direct current (DC).
They are also critical in signal processing,
acting as switches and amplifiers in various
circuits Additionally, they serve in protection
circuits, preventing reverse voltage damage
to sensitive components.
CONCLUSION
P-N junction diodes are fundamental
components in modern electronics, enabling
unidirectional current flow.
Their diverse applications and unique
properties make them invaluable in circuit
design.
Understanding their operation is essential
for engineers and technicians working with
electronic devices.
BIBLIOGRAPHY
[Link] BOOKS
[Link]
[Link]’[Link]