1.
Draw and explain the operation of schottky diode with neat circuit
and wave forms.
Schottky Diode
A Schottky diode is a type of diode with a metal-semiconductor junction instead of
the typical semiconductor-semiconductor junction found in standard diodes. The
Schottky diode has characteristics such as Low Forward Voltage Drop, Fast
Switching Speed and other unique features that make it more suitable for various
applications such as rectification, voltage clamping, voltage regulation, and RF
detection.
Operation of Schottky diode:
• A Schottky diode is formed by joining a metal and a semiconductor, creating a
metal–semiconductor junction.
• Due to the difference in work functions, a Schottky barrier is formed at the junction,
which opposes electron flow.
• When forward bias is applied (metal as anode, semiconductor as cathode), the
barrier height reduces, allowing electrons to flow easily.
• As a result, the diode has a low forward voltage drop of about 0.2–0.4 V, leading to
low power loss.
• Schottky diodes show very fast switching and negligible reverse recovery time
because conduction occurs only by majority carriers, making them suitable for
high-frequency applications.
VI Characteristic waveform
2. Discuss the operation of Power BJT with switching
characteristics?
Operation of Power BJT:
A Power BJT (Bipolar Junction Transistor) is a current-controlled power
semiconductor device used mainly as a switch in power electronic circuits. It has
three terminals namely Emitter (E), Base (B), and Collector (C).
When a small base current IB is applied, it controls a large collector current IC. The
relation between them is given by:
IC=βIB
where β is the current gain of the transistor.
The power BJT operates in two modes:
1. Cut-off mode (OFF state):
When base current IB=0, both junctions are reverse biased and collector current
IC=0.
The transistor behaves like an open switch.
2. Saturation mode (ON state):
When sufficient base current is applied, both emitter-base and collector-base
junctions are forward biased.
The transistor behaves like a closed switch with very small collector-emitter voltage
VCE(sat)
Switching Characteristics of Power BJT:
Switching characteristics describe the behavior of the BJT during turn-ON and
turn-OFF operations.
Turn-ON Characteristics:
When base current is applied-
• Delay time (td):
Time taken for base-emitter junction to become forward biased and collector current
to start rising.
• Rise time (tr):
Time during which collector current rises from 10% to 90% of its final value and VCE
falls.
Turn-ON time (ton)= td + tr
Turn-OFF Characteristics:
When base current is removed-
• Storage time (ts):
Time during which excess charge stored in the base region is removed.
Collector current remains almost constant.
• Fall time (tf):
Time during which collector current falls from 90% to 10% of its initial value and VCE
rises.
Turn-OFF time (toff)= td + tf
Switching characteristics of BJT:
Thus, a Power BJT operates as a switching device and its switching characteristics
determine the speed and performance of power electronic circuits.
3. Describe gate drive requirements in detail with a neat diagram?
Introduction:
Gate drive circuits are used to provide the required voltage, current, isolation, and
protection to control power semiconductor devices such as Power MOSFETs and
IGBTs. Proper gate driving ensures fast switching, reduced losses, and safe
operation of the device.
1. Gate Voltage Requirement:
● The gate must be driven with a voltage higher than threshold voltage to turn
ON the device.
● Typical values:
○ MOSFET: +10 to +15 V
○ IGBT: +15 V (ON), sometimes –5 V (OFF)
● Insufficient gate voltage leads to high ON-state losses.
2. Gate Current Requirement:
● Although the gate draws no steady-state current, a large transient current is
required to:
○ Charge gate capacitance during turn ON
○ Discharge gate capacitance during turn OFF
● High gate current → faster switching → reduced switching losses.
3. Fast Turn-ON and Turn-OFF:
● Gate drive must ensure
○ Rapid charging of gate capacitance (fast turn ON)
○ Rapid discharging of gate capacitance (fast turn OFF)
● Reduces switching time and power dissipation.
4. Electrical Isolation:
● Isolation is required between:
○ Low-voltage control circuit
○ High-voltage power circuit
● Achieved using:
○ Opto-couplers
○ Pulse transformers
● Prevents damage to control electronics.
5. Protection Requirements:
Gate drive circuit should protect the power device against:
● Over-voltage
● Over-current
● Short-circuit conditions
● False triggering due to noise
6. Noise Immunity:
● Proper gate resistance and shielding are used to:
○ Avoid false turn ON
○ Reduce dv/dt induced switching
● Ensures reliable operation in high-power circuits.
MOSFET/IGBT based gate drivers
4. Explain in detail about dv/dt and di/dt protection in thyristor?
A thyristor (SCR) is a latching power semiconductor device. It is sensitive to rate of
rise of voltage (dv/dt) and rate of rise of current (di/dt). Excessive dv/dt or di/dt may
cause false triggering or device damage, hence protection is required.
1. dv/dt Protection of Thyristor
Meaning of dv/dt:
● dv/dt is the rate of rise of anode-to-cathode voltage when the SCR is in
forward blocking state.
● A high dv/dt causes a displacement current through the junction capacitance.
Effect:
● This current may turn ON the SCR without gate signal (false triggering).
Protection Method:
● RC snubber circuit is connected across the thyristor.
Working:
● Capacitor C absorbs sudden voltage rise.
● Resistor R limits capacitor discharge current.
● This reduces dv/dt across the SCR.
dv/dt Protection Circuit:
● Series R–C network across SCR
2. di/dt Protection of Thyristor
Meaning of di/dt:
● di/dt is the rate of rise of anode current immediately after SCR turn ON.
Effect:
● High di/dt causes localized heating near the gate.
● May lead to hot spots and device failure.
Protection Method:
● Series inductor (L) is connected in the anode circuit.
Working:
● Inductor opposes sudden rise of current.
● Allows uniform current spread over junction.
di/dt Protection Circuit:
● Inductor in series with SCR
Thus, dv/dt protection prevents false triggering using an RC snubber, while di/dt
protection prevents device damage by limiting current rise using a series inductor.