Veeta Varsity International School

STD 12 Science Physics Total Marks : 20

Worksheet 82

* Given Section consists of questions of 4 marks each. [20]

1. The potential barrier in the p-n junction diode is the barrier in which the
charge recquires additional force for crossing the region. ln other words, the
barrier in which the charge carrier stopped by the obstructive force is known
as the potential barrier.
When a p-type semiconductor is brought into a close contact with n-ype
semiconductor, we get a p-n junction with a barrier potential 0.4V, and width
of depletion region is 4.0 × 10-7m. This p-n junction is forward biased with a
battery of voltage 3V and negligible internal resistance, in series with a
resistor of resistance R, ideal millimeter, and key K as shown in figure. When
key is pressed, a current of 20mA passes through the diode.

i. The intersity of the electric field in the depletion region when p-n
junction is unbiased is:
a. 0.5 × 106Vm-1
b. 1.0 × 106Vm-1
c. 2.0 × 106Vm-1
d. 1.5 × 106Vm-1
ii. The resistance of resistor R is:
a. 150Ω

b. 300Ω

c. 130Ω

d. 180Ω

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 iii. In a p-n junction, the potential barrier is due to the charges on either
side of the junction, these charges are:
a. Majority carriers.
b. Minority carriers.
c. Both (a) and (b).
d. Fixed donor and acceptor ions.
iv. If the voltage of the potential barrier is V0. A voltage Vis applied to the
input, at what moment will the barrier disappear?
a. V < V0
b. V = V0
c. V > V0
d. V << V0

v. If an electron with speed 4.0 × 105ms-1 approaches the p-n junction

from then-side, the speed with which it will enter the p-side is:
a. 1.39 × 105ms-1
b. 2.78 × 105ms-1
c. 1.39 × 106ms-1

d. 2.78 × 106ms-1
Ans. :
i. (b) 1.0 × 106Vm-1
Explanation:
VB 0.4
E− = −7
d 4.0×10

= 1.0 × 106Vm-1
ii. (c) 130Ω
Explanation:
Potential difference across = R = 3 - 0.4 = 2.6V
Resistance R =
Potential difference

Current

2.6
= −3
= 130Ω
20×10

iii. (d) Fixed donor and acceptor ions.

iv. (b) V = V0
Explanation:
When the voltage will be the same that of the potential barrier disappears
resulting in flow of current.
v. (a) 1.39 × 105ms-1
Explanation:
1 2 1 2
mv = eVB + mv
2 1 2 2

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 1 −31 5 2
⇒ × (9.1 × 10 ) × (4 × 10 )
2

−19 1 −31 2
= 1.6 × 10 × (0.4) + × 9.1 × 10 ×v
2 2

On solving, we get
v2 = 1.39 × 105ms-1

2. A photodiode is an optoelectronic device in which current carriers are

generated by photons through photo-excitation i.e., photo conduction by
light. It is a p-n junction fabricated from a photosensitive semiconductor and
provided with a transparent window so as allow light to fall on its function. A
photodiode can turn its current ON and OFF in nanoseconds. So, it can be
used as a fastest photo-detector.

i. A p-n photodiode is fabricated from a semiconductor with a band gap

of 2.5eV. It can detect a signal of wavelength:
a. 4000nm.
b. 6000nm.
c. 4000Â.
d. 6000Â.
ii. Three photo diodes D1 D2 and D3 are made of semiconductors having
band gap of 2.5eV, 2eV, and 3 eV, respectively. Which one will be able
to detect light of wavelength 6000Â?
a. D1
b. D2
c. D3
d. D1 and D2 both.
iii. Photodiode is a device:
a. Which is always operated in reverse bias.
b. Which of always operated in forward bias.
c. In which photo current is independent of intensity of incident
radiation.
d. Which may be operated in forward or reverse bias.
iv. To detect light of wavelength 500nm, the photodiode must be
fabricated from a semiconductor of minimum bandwidth of:
a. 1.24eV
b. 0.62eV

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 c. 2.48eV
d. 3.2eV
v. Photodiode can be used as a photodetector to detect:
a. Optical signals.
b. Electrical signals.
c. Both (a) and (b).
d. None of these.
Ans. :
i. (c) 4000Â.
Explanation:
−34 8
hc 6.6× 10 ×3× 10
λmax = = −19
E 2.5×1.6×10

= 5000Â
ˆ
∴ λ = 4000A < λmax

ii. (b) D2
Explanation:
Energy of incident photon, E = hc

−34 8
6.6× 10 ×3× 10
= −7 −19
= 2.06eV
6× 10 ×1.6× 10

The incident radiation can be detected by a photodiode if energy of incident

photon is greater than the band gap.
As D2 = 2eV, therefore D2 will detect these radiations.
iii. (a) Which is always operated in reverse bias.
Explanation:
Photodiode is a device which is always operated in reverse bias.
iv. (c) 2.48eV
Explanation:
Let Eg be the required bandwidth. Then
hc
Eg =
λ

Here, he = 1240eV nm,

λ = 500nm

1240eVnm
∴ Eg = = 2.48eV.
500nm

v. (a) Optical signals.

Explanation:
A photodiode is a device which is used to detect optical signals.
3. Solar cell is a p-n junction diode which converts solar energy into electric
energy. It is basically a solar energy converter. The upperlayer of solar cell is
of p-type semiconductor and very thin so that the incident light photons may
easily reach the p-n junction. On the top face of p-layer, the metal finger

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electrodes are prepared in order to have enough spacing between the fingers
for the lights to reach the p-n junction through p-layer.
i. The schematic symbol of solar cell is:

ii. The p-n junction which generates an emf when solar radiations fall an
it, with no external bias applied, is a:
a. Light emitting diode.
b. Photodiode.
c. Solar cell.
d. None of these.
iii. For satellites the source of energy is:
a. Solar cell.
b. Fuel cell.
c. Edison cell.
d. None of these.
iv. Which of the following material is used in solar cell?
a. Barium.
b. Silicon.
c. Silver.
d. Selenium.
v. The efficiency of a solar cell may be in the range:
a. 2 to 5%
b. 10 to 15%
c. 30 to 40%
d. 70 to 80%
Ans. :
i. (a)

ii. (c) Solar cell.

iii. (a) Solar cell.

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 Explanation:
Solar cells are the source of energy for satellites.
iv. (b) Silicon.
Explanation:
Silicon is used in solar cell.
v. (b) 10 to 15%
4. The electron mobility characterises how quickly an electron can move through a
metal of semiconductor when pulled by an electric field. There is an analogous
quality for holes, called hole mobility. A block of pure silicon at 300K has a length
of 10cm and an area of 1.0cm2. A battery of emf 2V is connected across it. The
mobility of electron is 0.14m2 V-1s-1 and their number density is 1.5 × 1016m-3.
The mobility of holes is 0.05m2 V-1s-1.
i. The electron current is:
a. 6.72 × 10-4A
b. 6.72 × 10-5A
c. 6.72 × 10-6A
d. 6.72 × 10-7A
ii. The hole current is:
a. 2.0 × 10-7A
b. 2.2 × 10-7A
c. 2.4 × 10-7A
d. 2.6 × 10-7A
iii. The number density of donor atoms which are to be added up to pure
silicon semiconductor to produce an n-type semiconductor of
conductivity 6.4Ω
−1
cm
−1
is approximately (neglect the contribution of
holes to conductivity).
a. 3 × 1022m-3
b. 3 × 1023m-3
c. 3 × 1024m-3
d. 3 × 1021m-3
iv. When the given silicon semiconductor is doped with indium, the hole
concentration increases to 4.5 × 1023m-3. The electron concentration in
doped silicon is:
a. 3 × 109m-3
b. 4 × 109m-3
c. 5 × 109m-3
 d. 6 × 109m-3
v. Pick out the statement which is not correct.
a. At a low temperature, the resistance of a semiconductor is very
high.
b. Movement of holes is restricted to the valence band only.
c. Width of the depletion region increases as the forward bias voltage
increases in case of a p-n junction diode.
d. ln a forward bias condition, the diode heavily conducts.
Ans. :
i. (d) 6.72 × 10-7A
Explanation:
V 2
E = = 20V/ m;
l 0.1

A = 1.0cm2 = 1.0 × 10-4m2

−1
ve = μe E = 0.14 × 20 = 2.8ms

Ie = ne Aeve

= ( 1.5 × 1016) × ( 1.0 × 10-4) × ( 1.6 × 10-19) × 2.8

= 6.72 × 10-7A
ii. (c) 2.4 × 10-7A
Explanation:
In a pure semiconductor,
ne = nh = 1.5 × 1016m-3
−1
vh = μh × E = 0.05 × 20 = 1.0ms

Ih = nhAevh

= ( 1.5 × 1016) × ( 1.0 × 10-4) × ( 1.6 × 10-19) × 1.0

= 2.4 × 10-7A
iii. (a) 3 × 1022m-3
Explanation:
σ = ene me

Or
2
σ 6.4×10
ne = = −19
eμ
e (1.6× 10 ×0.14

22 22 −3
= 3.14 × 10 ≈ 3 × 10 m

iv. (c) 5 × 109m-3

Explanation:
2 16 2
n (1.5×10 )
i
ne = = 22
nh 4.5×10

=5× 109m-3
v. (c) Width of the depletion region increases as the forward bias voltage
increases in case of a p-n junction diode.
 Explanation:
In case of a p-n junction diode, width of the depletion region decreases as the
forward bias voltage increases.
5. A silicon p-n junction diode is connected to a resistor Rand a battery of voltage
VB through milliammeter (mA) as shown in figure. The knee voltage for this
junction diode is VN = 0.7V. The p-n junction diode requires a minimum current
of 1mA to attain a value higher than the knee point on the I-V characteristics of
this junction diode. Assuming that the voltage Vacross the junction is
independent of the current above the knee point. A p-n junction is the basic
building block of many semiconductordevices like diodes. Important process
occurring during the formation of a p-n junction are diffusion and drift. ln an n-
type semiconductor concentration of electrons is more as compared to holes. ln
a p-type semiconductor concentration of holes is more as compared to
electrons.

i. If VB = 5V, the maximum value of R so that the voltage V is above the

knee point voltage is:
a. 40kΩ

b. 4.3kΩ

c. 5.0kΩ

d. 5.7kΩ

ii. If VB = 5V, the value of R in order to establish a current to 6mA in the

circuit is:
a. 833Ω

b. 717Ω

c. 950Ω

d. 733Ω

iii. If VB = 6V, the power dissipated in the resistor R, when a current of 6mA
flows in the circuit is:
a. 30.2mW
b. 30.8mW
c. 31.2mW
d. 31.8mW
iv. When the diode is reverse biased with a voltage of 6V and Vbi = 0.63V.
Calculate the total potential.
 a. 9.27V
b. 6.63V
c. 5.27V
d. 0.63V
v. Which of the below mentioned statement is false regarding a p-n
junction diode?
a. Diodes are uncontrolled devices.
b. Diodes are rectifying devices.
c. Diodes are unidirectional devices.
d. Diodes have three terminals.
Ans. :
i. (b) 4.3kΩ
Explanation:
Voltage drop across R.
VR = VB - VN= 5 - 0.7 = 4.3V

Here, Imin = 1 × 10-3A

VR 4.3
Rmax = = −3
Imin 1×10

3
= 4.3 × 10 Ω = 4.3kΩ.

ii. (b) 717Ω

Explanation:
I = 6mA = 6 × 10-3A;
VR = VB - VN= 5 - 0.7 = 4.3V
VR 4.3
R = = −3
= 717Ω.
I 6×10

iii. (d) 31.8mW

Explanation:
Here, VB = 6V; VN = 0.7V,
VR = 6 - 0.7 = 5.3V
Power dissipated in R =I × VR

= (6 × 10-3) × 5.3 = 31.8 × 10-3W

= 31.8mW
iv. (b) 6.63V
Explanation:
Vt = Vbi + VR = 0.63 + 6 = 6.63V.
v. (d) Diodes have three terminals.
Explanation:
​Diode is two terminal device, anode and cathode are the two terminals.
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