FDD390N15A N-Channel PowerTrench® MOSFET

October 2011

FDD390N15A
N-Channel PowerTrench® MOSFET
150V, 26A, 40mΩ
Features Description
• RDS(on) = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
• Fast Switching Speed
especially tailored to minimize the on-state resistance and yet
• Low Gate Charge maintain superior switching performance.

• High Performance Trench Technology for Extremely Low

RDS(on)

• High Power and Current Handling Capability

Application
• DC to DC Converters
• RoHS Compliant
• Synchronous Rectification for Server/Telecom PSU
• Battery Charger
• AC Motor Drives and Uninterruptible Power Supplies
• Off-line UPS

D
D

G
D-PAK
G S
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 150 V
VGSS Gate to Source Voltage ±20 V
-Continuous (TC = 25oC,Silicon Limited) 26
ID Drain Current A
-Continuous (TC = 100oC,Silicon Limited) 17
IDM Drain Current - Pulsed (Note 1) 104 A
EAS Single Pulsed Avalanche Energy (Note 2) 78 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
(TC = 25oC) 63 W
PD Power Dissipation
- Derate above 25oC 0.5 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering Purpose, oC
TL 300
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Ratings Units
RθJC Thermal Resistance, Junction to Case 2.0 o
C/W
RθJA Thermal Resistance, Junction to Ambient 87

©2011 Fairchild Semiconductor Corporation 1 [Link]

FDD390N15A Rev. C1
 FDD390N15A N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD390N15A FDD390N15A D-PAK 380mm 16mm 2500

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 - - V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, Referenced to 25oC - 0.1 - V/oC
∆TJ Coefficient
VDS = 120V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current µA
VDS = 120V, TC = 125oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 26A - 33.5 40 mΩ
gFS Forward Transconductance VDS = 10V, ID = 26A (Note 4) - 33 - S

Dynamic Characteristics
Ciss Input Capacitance - 965 1285 pF
VDS = 75V, VGS = 0V
Coss Output Capacitance - 96 130 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 5.8 - pF
Coss(er) Energy Related Output Capacitance VDS = 75V, VGS = 0V 169 - pF
Qg(tot) Total Gate Charge at 10V - 14.3 18.6 nC
Qgs Gate to Source Gate Charge VDS = 75V, ID = 27A 5.0 - nC
Qgs2 Gate Charge Threshold to Plateau VGS = 10V - 2.0 - nC
Qgd Gate to Drain “Miller” Charge (Note 4,5) - 3.5 - nC
ESR Equivalent Series Resistance (G-S) Drain Open,f = 1MHz - 1.4 - Ω

Switching Characteristics
td(on) Turn-On Delay Time - 14 38 ns
tr Turn-On Rise Time VDD = 75V, ID = 27A - 10 30 ns
td(off) Turn-Off Delay Time VGS = 10V, RGEN = 4.7Ω - 20 50 ns
tf Turn-Off Fall Time (Note 4,5) - 5 20 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 26 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 104 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 26A - - 1.25 V
trr Reverse Recovery Time VGS = 0V, ISD = 27A, VDD = 75V - 63 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/µs (Note 4) - 131 - nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C, L = 3 mH, ISD = 7.2 A
3. ISD ≤ 26A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

FDD390N15A Rev. C1 2 [Link]

 FDD390N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

200 200
VGS = 15.0V *Notes:
10.0V 100 1. VDS = 10V
100
8.0V 2. 250µs Pulse Test
7.0V

ID, Drain Current[A]

6.5V
ID, Drain Current[A]

6.0V
5.5V
5.0V

10 10
o o
150 C 25 C

o
-55 C
*Notes:
1. 250µs Pulse Test
o
2. TC = 25 C
1 1
0.1 1 5 2 3 4 5 6 7 8
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
80 200

100
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

60
RDS(ON) [mΩ],

o o
150 C 25 C
10
VGS = 10V
40
VGS = 20V
*Notes:
1. VGS = 0V
o 2. 250µs Pulse Test
*Note: TC = 25 C
20 1
0 20 40 60 80 0.4 0.6 0.8 1.0 1.2 1.3
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2000 10
1000
VGS, Gate-Source Voltage [V]

Ciss
VDS = 30V
8 VDS = 75V
VDS = 120V
Capacitances [pF]

100 6
Coss

*Note: 4
1. VGS = 0V
10
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted) Crss 2
Coss = Cds + Cgd
Crss = Cgd *Note: ID = 27A
1 0
0.1 1 10 100 200 0 4 8 12 16
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

FDD390N15A Rev. C1 3 [Link]

 FDD390N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.10 2.6
Drain-Source Breakdown Voltage

1.08 2.4

Drain-Source On-Resistance
BVDSS, [Normalized]

RDS(on), [Normalized]
2.0
1.04

1.6
1.00
1.2

0.96 *Notes:
0.8 *Notes:
1. VGS = 0V
1. VGS = 10V
2. ID = 250µA
2. ID = 26A
0.92 0.4
-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160
o
TJ, Junction Temperature [ C] o
TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
300 30
VGS= 10V
100
10µs 25
ID, Drain Current [A]

ID, Drain Current [A]

10 100µs 20

Operation in This Area 15

1 is Limited by R DS(on) 1ms

3ms 10
*Notes: DC
0.1 o
1. TC = 25 C
o
5
2. TJ = 150 C
o
3. Single Pulse RθJC = 2.0 C/W
0.01 0
1 10 100 200 25 50 75 100 125 150
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive
Switching Capability
1.2 12
If R = 0
10 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
IAS, AVALANCHE CURRENT (A)

If R = 0
1.0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

o
0.8 STARTING TJ = 25 C
EOSS, [µJ]

0.6
o
STARTING TJ = 150 C
0.4

0.2

0.0 1
0 30 60 90 120 150 0.01 0.1 1 10 20
VDS, Drain to Source Voltage [V]
tAV, TIME IN AVALANCHE (ms)

FDD390N15A Rev. C1 4 [Link]

 FDD390N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)

Figure 13. Transient Thermal Response Curve

3
Thermal Response [ZθJC]

1 0.5

0.2

0.1
PDM

0.05 t1
t2
0.1 0.02
0.01 *Notes:
Single pulse o
1. ZθJC(t) = 2.0 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01 -5 -4 -3 -2 -1
10 10 10 10 10 1
Rectangular Pulse Duration [sec]

FDD390N15A Rev. C1 5 [Link]

 FDD390N15A N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDD390N15A Rev. C1 6 [Link]

 FDD390N15A N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

FDD390N15A Rev. C1 7 [Link]

 FDD390N15A N-Channel PowerTrench® MOSFET
Mechanical Dimensions

D-PAK

Dimensions in Millimeters

FDD390N15A Rev. C1 8 [Link]

 FDD390N15A N-Channel PowerTrench® MOSFET
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Rev. I55

FDD390N15A Rev. C1 9 [Link]