DATA SHEET

SILICON TRANSISTOR
2SC4226
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD

DESCRIPTION
PACKAGE DIMENSIONS
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low
in millimeters
noise amplifier.
It is suitable for a high density surface mount assembly since the transistor 2.1 ± 0.1
has been applied small mini mold package. 1.25 ± 0.1

FEATURES

+0.1
• Low Noise 2

2.0 ± 0.2

0.65 0.65
0.3 –0
NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
3

+0.1
• High Gain

0.3 –0
1
2
|S21e| = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Small Mini Mold Package
EIAJ: SC-70
Marking

0.3
ORDERING INFORMATION 0.9 ± 0.1

–0.05
0.15 +0.1
PART
NUMBER QUANTITY PACKING STYLE

0 to 0.1
2SC4226-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Collector)face to perforation side of the
tape.
2SC4226-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape. PIN CONNECTIONS
1. Emitter
2. Base
* Please contact with responsible NEC person, if you require evaluation 3. Collector
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4226)

The information in this document is subject to change without notice.

Document No. P10368EJ3V0DS00 (3rd edition)

(Previous No. TC-2402)
Date Published July 1995 P
Printed in Japan © 1993
 2SC4226

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Collector to Base Voltage VCBO 20 V

Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3 V
Collector Current IC 100 mA
Total Power Dissipation PT 150 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION

Collector Cutoff Current ICBO 1.0 µA VCB = 10 V, IE = 0

Emitter Cutoff Current IEBO 1.0 µA VEB = 1 V, I C = 0

DC Current Gain hFE 40 110 250 VCE = 3 V, IC = 7 mA*1

Gain Bandwidth Product fT 3.0 4.5 GHz VCE = 3 V, IC = 7 mA

Feed back Capacitance Cre 0.7 1.5 pF VCE = 3 V, IE = 0, f = 1 MHz*2

Insertion Power Gain |S21e|2 7 9 dB VCE = 3 V, IC = 7 mA, f = 1 GHz

Noise Figure NF 1.2 2.5 dB VCE = 3 V, IC = 7 mA, f = 1 GHz

*1 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.

*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.

hFE Classification

Rank R23 R24 R25

Marking R23 R24 R25

hFE 40 to 80 70 to 140 125 to 250

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 2SC4226

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

TOTAL POWER DISSIPATION COLLECTOR CURRENT vs.

vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE
20
PT – Total Power Dissipation – mW

Free Air VCE = 3 V

IC – Collector Current – mA
200

10
100

0 50 100 150 0 0.5 1.0

TA – Ambient Temperature – °C VBE – Base to Emitter Voltage – V

COLLECTOR CURRENT vs. DC CURRENT GAIN vs.

COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT
25 200
IB =160 µ A VCE = 3 V
140 µ A
IC – Collector Current – mA

20 100
hFE – DC Current Gain

120 µ A

15 100 µ A
50
80 µ A
10 60 µ A
40 µ A 20
5
20 µ A

10
0 5 10 0.5 1 5 10 50
VCE – Collector to Emitter Voltage – V IC – Collector Current – mA

GAIN BANDWIDTH PRODUCT INSERTION POWER GAIN vs.

vs. COLLECTOR CURRENT COLLECTOR CURRENT
20 15
VCE = 3 V
fT – Gain Bandwidth Product – GHz

VCE = 3 V
|S21e|2 – Insertion Power Gain – dB

f = 1.0 GHz
f = 1.0 GHz
10
10

5
2

1 0
0.5 1 5 10 50 0.5 1 5 10 50 100
IC – Collector Current – mA IC – Collector Current – mA

3
 2SC4226

NOISE FIGURE vs.

COLLECTOR CURRENT INSERTION POWER GAIN vs. FREQUENCY
6 24
VCE = 3 V VCE = 3 V

|S21e|2 – Insertion Power Gain – dB

f = 1 GHz IC = 7 mA
20
NF – Noise Figure – dB

4 16

12

2 8

0 0
0.5 1 5 10 50 100 0.1 0.2 0.5 1.0 2.0 5.0
IC – Collector Current – mA f – Frequency – GHz

FEED-BACK CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
Cre – Feed-back Capacitance – pF

2.0

1.0

0.5

0.2

0.1
1 2 5 10 20 50
VCB – Collector to Base Voltage – V

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 2SC4226

S-PARAMETER

VCE = 3 V, IC = 7 mA, ZO = 50 Ω

FREQUENCY S11 S21 S12 S22

MHz MAG ANG MAG ANG MAG ANG MAG ANG

100.00 .750 –45.7 11.858 144.0 .035 63.3 .816 –28.5

200.00 .618 –84.9 10.093 122.3 .053 53.2 .609 –41.8
300.00 .528 –114.5 8.219 107.7 .064 50.6 .481 –46.7
400.00 .483 –134.3 6.684 97.9 .073 50.6 .411 –49.1
500.00 .459 –148.5 5.565 90.5 .081 50.7 .365 –50.5
600.00 .447 –158.8 4.737 84.6 .089 52.3 .337 –51.5
700.00 .441 –167.4 4.134 79.7 .098 53.5 .316 –52.6
800.00 .439 –174.4 3.653 75.2 .107 54.2 .300 –54.2
900.00 .437 179.2 3.283 71.1 .117 54.9 .290 –55.9
1000.00 .437 173.7 2.978 67.2 .126 55.6 .281 –57.9
1100.00 .440 168.6 2.732 63.7 .136 55.8 .275 –59.6
1200.00 .443 163.9 2.533 60.0 .147 55.3 .270 –62.3
1300.00 .444 159.6 2.357 56.6 .158 55.4 .267 –64.7
1400.00 .449 155.5 2.216 53.4 .169 55.3 .264 –67.5
1500.00 .450 151.6 2.077 50.3 .180 54.7 .259 –70.6
1600.00 .455 147.9 1.972 47.4 .192 54.5 .258 –73.3
1700.00 .459 144.3 1.868 44.3 .202 53.9 .256 –76.3
1800.00 .462 140.9 1.789 41.3 .214 53.0 .255 –79.6
1900.00 .466 137.5 1.702 38.4 .226 52.3 .253 –83.0
2000.00 .470 134.4 1.635 36.1 .238 51.5 .253 –86.4

VCE = 3 V, IC = 5 mA, ZO = 50 Ω

FREQUENCY S11 S21 S12 S22

MHz MAG ANG MAG ANG MAG ANG MAG ANG

100.00 .819 –38.9 8.934 148.0 .038 65.8 .868 –23.6

200.00 .701 –73.4 8.007 127.6 .060 53.1 .687 –36.7
300.00 .608 –102.3 6.898 112.6 .072 47.6 .560 –42.4
400.00 .549 –123.6 5.819 101.8 .079 45.2 .483 –45.4
500.00 .511 –139.6 4.970 93.5 .086 45.7 .434 –47.2
600.00 .494 –151.0 4.255 86.9 .093 46.5 .402 –48.6
700.00 .481 –160.8 3.750 81.4 .099 47.2 .379 –49.9
800.00 .475 –168.6 3.328 76.3 .107 48.9 .361 –51.5
900.00 .472 –175.7 3.004 72.0 .113 49.7 .350 –53.4
1000.00 .471 178.2 2.734 67.7 .122 50.9 .340 –55.4
1100.00 .473 172.8 2.522 64.0 .130 51.6 .332 –57.3
1200.00 .474 167.6 2.355 60.2 .139 52.3 .328 –59.7
1300.00 .474 162.9 2.176 56.7 .148 53.1 .322 –62.3
1400.00 .477 158.4 2.038 53.2 .158 53.3 .319 –65.2
1500.00 .481 154.4 1.921 49.8 .168 53.7 .315 –68.2
1600.00 .484 150.3 1.818 46.7 .177 53.3 .313 –70.9
1700.00 .489 146.5 1.726 43.9 .190 53.3 .312 –73.9
1800.00 .490 142.9 1.647 40.6 .200 53.0 .312 –77.2
1900.00 .495 139.3 1.578 37.6 .212 52.7 .309 –80.8
2000.00 .501 136.0 1.505 35.0 .223 52.0 .309 –84.0

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 2SC4226

S-PARAMETER

VCE = 3 V, IC = 3 mA, ZO = 50 Ω

FREQUENCY S11 S21 S12 S22

MHz MAG ANG MAG ANG MAG ANG MAG ANG

100.00 .899 –30.6 5.578 153.7 .042 69.0 .923 –17.3

200.00 .808 –60.6 5.327 134.4 .069 54.5 .793 –29.2
300.00 .723 –86.7 4.877 119.6 .084 46.0 .679 –35.4
400.00 .660 –108.2 4.341 108.1 .093 41.1 .604 –39.5
500.00 .610 –125.9 3.883 98.5 .098 38.8 .550 –42.0
600.00 .583 –138.6 3.388 90.9 .102 37.4 .513 –44.2
700.00 .560 –150.0 3.046 84.3 .106 37.8 .487 –45.9
800.00 .547 –159.4 2.741 78.5 .108 38.1 .468 –47.9
900.00 .538 –167.4 2.498 73.4 .112 39.5 .455 –49.9
1000.00 .535 –174.4 2.287 68.9 .116 41.0 .444 –52.3
1100.00 .534 179.3 2.111 64.6 .120 43.0 .435 –54.7
1200.00 .533 173.4 1.965 60.2 .125 45.1 .429 –57.2
1300.00 .533 168.3 1.830 56.3 .131 46.7 .424 –59.9
1400.00 .534 163.2 1.721 52.7 .139 48.3 .422 –62.8
1500.00 .538 158.7 1.620 49.2 .146 49.8 .417 –65.7
1600.00 .542 154.3 1.544 45.7 .155 51.3 .414 –68.8
1700.00 .545 150.0 1.464 42.7 .164 52.4 .415 –72.0
1800.00 .548 146.1 1.396 39.5 .174 53.0 .412 –75.3
1900.00 .552 142.0 1.336 36.6 .187 53.7 .411 –78.8
2000.00 .556 138.3 1.280 33.6 .199 54.1 .411 –82.3

VCE = 3 V, IC = 1 mA, ZO = 50 Ω

FREQUENCY S11 S21 S12 S22

MHz MAG ANG MAG ANG MAG ANG MAG ANG

100.00 .967 –22.9 1.935 159.9 .045 74.0 .978 –9.2

200.00 .930 –45.8 1.968 143.1 .083 60.1 .931 –17.4
300.00 .884 –67.1 1.938 129.1 .108 48.9 .870 –23.2
400.00 .842 –85.9 1.827 117.2 .125 39.4 .822 –28.0
500.00 .801 –103.1 1.748 106.7 .134 32.6 .779 –31.9
600.00 .771 –117.0 1.576 97.4 .137 27.1 .749 –35.3
700.00 .742 –130.0 1.498 89.2 .137 22.9 .722 –38.4
800.00 .722 –141.2 1.403 81.9 .134 20.0 .702 –41.3
900.00 .706 –151.1 1.326 75.6 .129 18.5 .690 –44.4
1000.00 .695 –159.9 1.242 69.6 .124 17.8 .680 –47.4
1100.00 .689 –167.7 1.169 64.5 .118 18.1 .671 –50.4
1200.00 .685 –174.9 1.102 59.6 .112 19.8 .666 –53.6
1300.00 .681 178.7 1.030 55.3 .106 23.5 .660 –56.9
1400.00 .681 172.6 .979 50.9 .103 28.0 .658 –60.4
1500.00 .683 166.8 .925 47.2 .100 33.6 .654 –64.0
1600.00 .684 161.4 .884 43.6 .102 40.4 .651 –67.6
1700.00 .684 156.1 .842 40.4 .107 47.5 .651 –71.5
1800.00 .686 151.4 .804 37.3 .115 53.5 .649 –75.1
1900.00 .689 146.6 .773 34.6 .127 57.9 .646 –79.2
2000.00 .690 142.1 .738 32.3 .141 62.1 .646 –83.0

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 2SC4226

[MEMO]

7
 2SC4226

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
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copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
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The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11