Basics of Semiconductor Physics
F.E. Sem.-i Applied Physics 6.15
6.9 SOLVED PROBLEMS
Calculate the velocity of the
Problem 1 : The Fernmi level of potassium is 2.1 eV.
electron at the Fermi level.
Solution :
2
Formula : E, = mu
10-19
2EE 2.2 x 1 x 1.602 x
v = 9.1 x 10-31
m
=0.74 x 1012 m'/s²
V = 8.6 x 10 m/s
Ans. VE = 8.6 x 10 m/s
Problem 2: In a solid, consider the energy evel lying 0.01 eV below Fermi level.
What is the probability of this level not being occupied by an electron?
Solution:
Formula : (EF - E) = (E - (E - 0.01) = 0.01 eV
kT = 0.026 eV (known) at T = 300 k
The probability of energy level Enot being occupied by an electron is given by
[1 - Fe)].
[1 - Fe] = 1 1+ elE-Ep)/RT
1
1 + e(E -E)/RT
=
1
1+ e.01 ev/0.026 eV
1
1 + e0.385
1
1 +1.47
= 0.405
Ans. Probability is 0.405.
Problem 3 : Find the temperature at which there is 1% probability that astate with
energy 2 eV is occupied. Given that Fermi energy is 1.5 eV.
Solution :
1
Formula: F(E) = 1 + exp(E -Ep)/ET]
E- E = 2 eV - 1.5 eV = 0.5 eV
F(E) = 1%
1 1
1+ exp0.5/RT
EE. Sem.- Applied Physics 6.16
Basics of Semiconductor Physics
e.s/kT 0.99
0.01 99
Taking log on both sides
0.5
kT
=
2.303 log 99
0.5 eV
2.303 log 99 x 8.61 x 10 eV
= 1262 K
Ans. T=1262 K.
|Resistivity and Hall effect
Problem 1:The resistivity of Cu is 1.72 x 10- ohm-m. Calculate the mobility of
electrons in Cu. Given that the number of electrons per unit volume is 10.41 x
10/m².
Solution : Given : Resistivity of Cu (p) = 1.72x 108 ohm-m
Number of electrons per unit volume (n) = 10.41 x 102%/m
1 1
Formula : 1.72 x 10-8
G =58.13 x 10° mho per meter
nele
58.13 x 106
ne 10.41 x 1028 x 1.6x 10-19
Ans, He = 3.49 x 10 m²/volt-sec
Problem 2 : The mobility of holes is 0.025 m²/volts sec. What would be the
resistivity of a p-type silicon, if the Hall co-efficient of the sample is 2.25 x 10-5
m²/c?
Solution : Given:Mobility of holes (4h) = 0.025 m²/volts-sec.
Hall co-efficient (RH) = 2.25 x 10 m/c.
Formula:Conductivity of p-type semiconductor
RH =
1
Op = Pen pe
uh 0.025
Op = RH 2.25 x 10-5
Op = 1111.11 mho per meter
1
Resistivity (p) = 1111.11
Ans. p=9.00 x 10 ohn meter
Problem 3 : Find resistivity of intrinsic germanium at 300 k. Given density of
carriers is 2.5 x 1019/m². Mobility of electrons is 0.39 m²/volt-sec and mobility of
holes is 0.19 m²lv-sec charge of electron is 1.6 x 10 c.
F.E. Sem. Applied Physics 6.17
Basics of Semiconductor Physics
Solution : Given: Mobility of electrons (u) =0.39 m/voltS-SeC.
Mobility of holes (un) = 0.19 m'/volts-sec.
Density of carriers (n) = 2.5 x 10"/m
Charge of electron (e) = 1.6 x 10c
Formula : Conductivity of intrinsic germanium is given by ß.
Ototal = On t Op
[(nen) + (nen)]
In case of intrinsic semiconductor
n=p = 2.5 x 10*/m
Ototal = [ne (Hn t uh)]
[2.5 x 101 x 1.6 x 10 (0.39 + 0.19)]
Ototal = 2.32 mho/meter
Resistivity of intrinsic germanium (3)
1 1
2.32
Ans. p= 0.43 ohm-meter
Problem 4 : In intrinsic Ge, the carrier concentration is 2.5 x 10*9/m'. The electron
and hole mobilities are 0.39 m'/v-sec and 0.17 m²/v-sec respectively. Find the
resistance of a Ge rod of 2 cm x 1 mm x 1 mm dimension.
Solution : Given :
n, = 2.5 x 1019/m3
He = 0.39 m²/v-sec
h =0.17 m/v-sec
A= 1 [Link] = 10- mm²
|= 2 cm = 2 x 10-2 m
Formula : R =
A
1
p=
n, (He t un) e
2.5 x 10 (0.39 +0.17) x 1.6 x 1019
G= 2.24 mho/m
p=
1
2.24 0.4464 Q m
R= A
2x 10-2
0.446 x 10-6
Ans. R=8.92 x 10 Q
EE. Sem. Applied Physics 6.18 Basics of Semiconductor Physics
oroblem 5:A sample of n-typesilicon has adoner densityof 102°/m². It is used in
the Hall Efect experiment. If the sample of width 4.5 mm is kept in a magnetic field
of (0.55T) with current density of 500 A/m, find: (1) Hall voltage developed in it.
() Hallcoefficient. (3) Hall angle of mobility of electrons is 0.17 m²/V sec.
Solution: Given:
Doner density Np = 10°/m
Width (W) = 4.5 mm x 4.5 x 10 m
Magnetic filed (B) = 0.55T
Current density (3) = 500 A/m
Mobility of electron (He) = 0.17 m²/V sec
Formula :(1) Hall voltage
JBw
VH = ne
Put n = ND
500 x 0.55 x 4.5 x 103
VH = 102 x 1.6 x 10-19
Ans. VH = 0.0773 volts
(2) Hall coefficient (RH)
RH = 1 =
ne NDe
1
102x 1.6 x 10-19
Ans. Ry =0.0625 m/c
(3) Hall angle
tan = HeB
= 0.17 x0.55
tan 0 = 0.0935
Ans. = 5.310
Problem 6: The Hall coefficient of aspecimen of doped silicon is found to be
3.66 x 10 m³/c. The resistivity of the specimen is 8.93 x 10 2-m. Find the
mobility and density of the charge carrier.
Solution : Given :
Hall coefficient (RH) = 3.66 x 10 m²/c
p= 8.93 ×10 m, u= ? n=?
Formula:(1) Hallcoefficient (RH)
RH
1
ne
F.E. Sem. Applied Physics 6.19
Basics of: Semiconductor Physics
1 1
10-19
3.66 x 10- x 1.6 x
n =
Re
Ans.
n = 1.707 x 1022/m
(2) Mobility of the charge carrier
neu
1 and G=
ne RH = ne
oRH
RH 3.66 x 10-4
8.93 x 10-3
Ans.
H =0.0409 m²/volt sec
Problem 7:Asemiconductor crystal 12 mm long, 1 mm wide and 1 mm thick has a
magnetic flux density of 0.5 wb/m² applied from front to back, perpendicular to
largest faces. When a current of 20 mA flows length wise through the specimen, the
voltage measured across, its width is found to be 374 volts. What is the Hall
coefficient of semiconductor?
Solution : Given : Semiconducting crystal
Length (L) =12 mm = 12 x 10 m
Thickness (t) = 1 mm = 1x 10 m
Breadth (b) = 1mm = 1 x 10 m
Current (I) = 20 mA = 20 x 10 A
Hall voltage (VH) =37 uV = 37 x 10 V
Magnetic flux dernsity (B) = 0.5 Wb/m²
Formula: Hall voltage (VH)
BWJ BWI
VH = ne neA
Let t be thickness, wbe the width of the sample,
then A = Wt
BWI RABI
VH = neWt t
RH = VH xt
Ix B
37 x 10x 1 x10-3
RH = 20 x 10 x0.5
Ans. RH =3.7 x 10 m²/c
Problem 8: A bar ofn type Ge of size 0.010 m x
a magnetic field of 2 x 10 T. 0.001 m x 0.001 m is mounted in
The electron density in the bar is 7 x
mili-volts is applied across the long ends of the bar, 1021/m. If one
the bar and the voltage determine the
between Hali electrodes placed across the current through
of the bar. Assume n = 0.39 m²/vsec short dimensions
Applied Physics 6.20
[Link]. Basics of Semiconductor Physics
Solution: Given : Hn=0.39 m'/vsec
B = 2x 10 T. n =7x 10/m?
1 1
Formula p =
0.39 x 7x 1021 x 1.6 x 10-19
D= 2.28 x 10 /m
R =
pl 2.28 x 10 x0.01
NoW A (0.001 x0.001)
R= 22.8 Q
.teve lona side is used as length as instructed and other two sides are forming width
nd height which in turn gives cross sectional area.
1x 10-3
Using Ohm's law I= = 4.385 x 10-5
22.8
I= 43.85 A
Usingformula for Hall voltage
VH = RHBJW As RH =px
and J= A Wxt
VH = px u x B= W xt = Pul B/W]
2.28 x 10- x 0.39 x0.2 x 43.85 x 10
0.001
VA =7.798 x 10 uV
Ans. VH = 7.798 V
Problem 9 : Ina semiconductor with Hall coefficient 145 cc/c having width 2 cm and
thickness 0.2cm with a magnetic field induction of 2T along the smaller dimension, a
Current of 150 mA is calculated the current density and Hall voltage.
Solution: Given: Hall coefficient, Ry = 145 cc/c
Width W = 2 cm
Thickness t = 0.2 cm
Magnetic field B = 2T
I= 150 mA
I 150 x 10-3
Current density A W Xd 2 x 10 x 0.2 x 102
J =3750 A/m²
Now, Hall co-efficient
VH/d VH = RHJB
RH = JB
0.2 x 10-2
Now, w = 145 x 10°°x 3750 x 2 x
W= 2.175 x 10 V
Ans. W= 2.175 mV.